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1. 发明授权

US07811356B2 Method of purifying metal 有权
标题翻译：净化金属的方法
公开(公告)号：US07811356B2
公开(公告)日：2010-10-12
申请号：US11631287
申请日：2005-07-04
申请人： Kenji Wada , Toshiaki Fukuyama , Ryotatsu Otsuka
发明人： Kenji Wada , Toshiaki Fukuyama , Ryotatsu Otsuka
IPC分类号： C22B61/00 , C22B9/02 , C01B31/00
CPC分类号： C22B9/02 , C01B33/037 , C22B61/00 , Y02P10/234
摘要： The disclosure is directed to a method for purifying metals, which can very efficiently and inexpensively eliminate impurity elements included in various metallic or semiconductor materials, or more specifically included in metallurgical grade silicon.
摘要翻译：本发明涉及一种净化金属的方法，其可以非常有效和廉价地消除包括在各种金属或半导体材料中，或更具体地包括在冶金级硅中的杂质元素。

2. 发明申请

US20080289150A1 Method of Purifying Metal 有权
标题翻译：净化金属的方法
公开(公告)号：US20080289150A1
公开(公告)日：2008-11-27
申请号：US11631287
申请日：2005-07-04
申请人： Kenji Wada , Toshiaki Fukuyama , Ryotatsu Otsuka
发明人： Kenji Wada , Toshiaki Fukuyama , Ryotatsu Otsuka
IPC分类号： B01D9/00
CPC分类号： C22B9/02 , C01B33/037 , C22B61/00 , Y02P10/234
摘要： A method for purifying a metal, which includes: a first step of holding a first molten metal containing impurities in a first crucible; a second step of immersing a first cooling body in the first molten metal held in the first crucible while letting a cooling fluid flow in the interior of the cooling body to crystallize a first purified metal on a surface of the cooling body; a third step of taking out the first cooling body with the first purified metal crystallized thereon from the first molten metal; a fourth step of holding in a crucible a second molten metal having an impurity concentration less than that of the first molten metal of the first step; a fifth step of melting the first purified metal crystallized in the second step and holding the molten metal in a second crucible together with the second molten metal held in the fourth step; a sixth step of immersing a second cooling body in the second molten metal held in the fifth step while letting a cooling fluid flow in the interior of the cooling body to crystallize a second purified metal on a surface of the cooling body; and a seventh step of taking out the second cooling body with the second purified metal crystallized thereon in the sixth step from the second molten metal.
摘要翻译：一种净化金属的方法，其特征在于包括：将含有杂质的第一熔融金属保持在第一坩埚中的第一步骤; 将第一冷却体浸入保持在第一坩埚中的第一熔融金属中，同时使冷却流体在冷却体的内部流动使第一纯化金属在冷却体的表面上结晶的第二步骤; 第三步骤，从第一熔融金属取出第一冷却体，其中结晶有第一纯化金属; 在坩埚中保持杂质浓度小于第一步骤的第一熔融金属的第二熔融金属的第四步骤; 熔化在第二步骤中结晶的第一纯化金属并将熔融金属与保持在第四步骤中的第二熔融金属一起保持在第二坩埚中的第五步骤; 将第二冷却体浸渍在第五工序中保持的第二熔融金属中，同时使冷却液在冷却体内流动，使第二纯化金属在冷却体的表面上结晶的第六工序; 以及第七步骤，从第二熔融金属在第六步骤中从第二冷却体中取出第二纯化金属在其上结晶化。

3. 发明申请

US20050139148A1 Silicon purifying method, slag for purifying silicon and purified silicon 审中-公开
标题翻译：硅精制方法，用于纯化硅和纯化硅的炉渣
公开(公告)号：US20050139148A1
公开(公告)日：2005-06-30
申请号：US10503304
申请日：2003-02-03
申请人： Hiroyasu Fujiwara , Ryotatsu Otsuka , Kenji Wada , Toshiaki Fukuyama
发明人： Hiroyasu Fujiwara , Ryotatsu Otsuka , Kenji Wada , Toshiaki Fukuyama
IPC分类号： C01B33/037 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C01B33/037
摘要： Method capable of preparing silicon having purity of about 6N applied to a solar cell efficiently at a low cost. Raw silicon containing boron and a slag are melted and a shaft is rotated by a rotating/driving mechanism for stirring the molten silicon. The molten slag is dispersed in the molten silicon, thereby accelerating the boron removal reaction. It is further effective to use a slag containing at least 45 percent by mass of silicon oxide or to blow gas mixed with water vapor into the molten silicon for refining reaction.
摘要翻译：能够以低成本高效率地制造纯度约为6N的硅的方法。含有硼和渣的原料硅熔化，并通过用于搅拌熔融硅的旋转/驱动机构旋转轴。熔融渣分散在熔融硅中，从而加速脱硼反应。使用含有至少45质量％的氧化硅的炉渣或者将与水蒸气混合的气体吹入熔融硅中以进行精制反应是进一步有效的。

4. 发明申请

US20080031799A1 Method For Refining Silicon And Silicon Refined Thereby 审中-公开
标题翻译：由此精制硅和硅的方法
公开(公告)号：US20080031799A1
公开(公告)日：2008-02-07
申请号：US11631312
申请日：2005-07-07
申请人： Toshiaki Fukuyama , Kenji Wada
发明人： Toshiaki Fukuyama , Kenji Wada
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： In order to provide silicon for solar batteries inexpensively by efficient refining and without lowering the refining rate, the present invention is directed to a method for refining molten silicon containing an impurity element. According to one aspect, the method includes the steps of: bringing a refine gas containing a component that reacts with the impurity element into contact with the molten silicone, thereby removing a product containing the impurity element from the molten silicon; and bringing a process gas, having small reactivity with the molten silicon, with the molten silicon, thereby removing a product generated by reaction of the molten silicon and the refine gas.
摘要翻译：为了通过有效的精炼提供廉价的太阳能电池的硅并且不降低精炼速度，本发明涉及一种用于精炼含有杂质元素的熔融硅的方法。根据一个方面，所述方法包括以下步骤：使含有与所述杂质元素反应的成分的精炼气体与所述熔融硅酮接触，从而从所述熔融硅除去含有所述杂质元素的物质; 并且将与熔融硅反应性小的工艺气体与熔融硅反应，从而除去由熔融硅与精炼气体反应产生的产物。

5. 发明授权

US08404427B2 Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition 有权
标题翻译：光敏组合物，图案形成方法和使用光敏组合物的抗蚀剂膜
公开(公告)号：US08404427B2
公开(公告)日：2013-03-26
申请号：US12786127
申请日：2010-05-24
申请人： Kenji Wada , Kunihiko Kodama
发明人： Kenji Wada , Kunihiko Kodama
IPC分类号： G03F7/028 , G03F7/039 , G03F7/26
CPC分类号： C07D307/33 , C07C381/12 , C07D307/20 , C07D307/32 , C07D307/77 , C07D309/30 , C07D409/12 , C07D409/14 , C07D493/08 , C07D493/14 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A photosensitive composition containing a compound having a specific structure, a pattern-forming method using the photosensitive composition, and a compound having a specific structure used in the photosensitive composition.
摘要翻译：含有具有特定结构的化合物的光敏组合物，使用该感光性组合物的图案形成方法和在感光性组合物中使用的具有特定结构的化合物。

6. 发明授权

US08241840B2 Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method 有权
标题翻译：图案形成方法，图案形成方法中使用的抗蚀剂组合物，图案形成方法中使用的负显影液和用于图案形成方法的负显影用漂洗溶液
公开(公告)号：US08241840B2
公开(公告)日：2012-08-14
申请号：US12825088
申请日：2010-06-28
申请人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizuyoshi , Kenji Wada , Wataru Hoshino
发明人： Hideaki Tsubaki , Shinji Tarutani , Kazuyoshi Mizuyoshi , Kenji Wada , Wataru Hoshino
IPC分类号： G03F7/30 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/325 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method includes (a) coating a substrate with a resist composition including a resin that includes a repeating unit represented by a following general formula (NGH-1), and, by the action of an acid, increases the polarity and decreases the solubility in a negative developing solution; (b) exposing; and (d) developing with a negative developing solution: wherein RNGH1 represents a hydrogen atom or an alkyl group; and RNGH2 to RNGH4 each independently represents a hydrogen atom or a hydroxyl group, provided that at least one of RNGH2 to RNGH4 represents a hydroxyl group.
摘要翻译：图案形成方法包括：（a）用包含由以下通式（NGH-1）表示的重复单元的树脂的抗蚀剂组合物涂布基材，并且通过酸的作用增加极性，并降低在负显影液中的溶解度; （b）曝光; 和（d）用负显影液显影：其中RNGH1表示氢原子或烷基; 并且RNGH 2至RNGH 4各自独立地表示氢原子或羟基，条件是RNGH 2至RNGH 4中的至少一个表示羟基。

7. 发明授权

US08110333B2 Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound 有权
标题翻译：含有新型锍化合物的抗蚀剂组合物，使用抗蚀剂组合物的图案形成方法和新型锍化合物
公开(公告)号：US08110333B2
公开(公告)日：2012-02-07
申请号：US12184780
申请日：2008-08-01
申请人： Sou Kamimura , Yasutomo Kawanishi , Kenji Wada , Tomotaka Tsuchimura
发明人： Sou Kamimura , Yasutomo Kawanishi , Kenji Wada , Tomotaka Tsuchimura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106
摘要： A resist composition includes (A) a compound represented by the following formula (I): wherein each of R1 to R13 independently represents a hydrogen atom or a substituent, provided that at least one of R1 to R13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X− represents an anion containing a proton acceptor functional group.
摘要翻译：抗蚀剂组合物包括（A）由下式（I）表示的化合物：其中R 1至R 13各自独立地表示氢原子或取代基，条件是R 1至R 13中的至少一个为含有醇羟基的取代基 ; Z表示单键或二价连接基团; X表示含有质子受体官能团的阴离子。

8. 发明授权

US08088550B2 Positive resist composition and pattern forming method 失效
标题翻译：正抗蚀剂组成和图案形成方法
公开(公告)号：US08088550B2
公开(公告)日：2012-01-03
申请号：US12181757
申请日：2008-07-29
申请人： Shinji Tarutani , Hideaki Tsubaki , Kenji Wada
发明人： Shinji Tarutani , Hideaki Tsubaki , Kenji Wada
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , G03F7/2022 , G03F7/2041 , Y10S430/111
摘要： A positive resist composition, includes: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer increases under an action of an acid; (C) a compound capable of decomposing under an action of an acid to generate an acid; and (D) a compound which itself acts as a base for the acids generated from the component (A) and the component (C) but decomposes upon irradiation with actinic rays or radiation to lose a basicity for the acids generated from the component (A) and the component (C).
摘要翻译：正型抗蚀剂组合物包括：（A）在用光化射线或辐射照射时能够产生酸的化合物; （B）在碱性显影剂中的溶解度在酸的作用下增加的树脂; （C）能够在酸的作用下分解以产生酸的化合物; 和（D）本身作为由组分（A）和组分（C）产生的酸的碱的化合物，但是在用光化射线或辐射照射时分解，以失去由组分（A）产生的酸的碱度）和组分（C）。

9. 发明申请

US20110089385A1 COMPOSITION FOR OPTICAL MATERIALS 有权
标题翻译：光学材料组成
公开(公告)号：US20110089385A1
公开(公告)日：2011-04-21
申请号：US12904252
申请日：2010-10-14
申请人： Kenji Wada , Kyohei Arayama , Akiyoshi Goto
发明人： Kenji Wada , Kyohei Arayama , Akiyoshi Goto
IPC分类号： G02B5/22 , C07F7/18 , C07F7/10
CPC分类号： C07F7/21 , C08G77/045 , C08L83/04 , G02B1/111
摘要： The composition for optical materials includes a polymer obtained from silsesquioxanes which are represented by average composition formula (1): (R1SiO1.5)x(R2SiO1.5)y (wherein R1 is a polymerizable group, R2 is a non-polymerizable group, x is a number of 2.0 to 14.0, y is a number of 2.0 to 14.0, provided that x+y=8.0 to 16.0, and R1 groups and R2 groups may be the same or different) and include at least one cage silsesquioxane compound. This composition is suitable for use as the antireflective film in optical devices, has less film shrinkage in the curing step, has good coated surface state and excellent moisture resistance and adhesion, has small changes in the refractive index under high temperature conditions, and is capable of forming a low-refractive-index film.
摘要翻译：用于光学材料的组合物包括由平均组成式（1）表示的倍半硅氧烷获得的聚合物：（R1SiO1.5）x（R2SiO1.5）y（其中R1是可聚合基团，R2是不可聚合基团， x为2.0〜14.0的数，y为2.0〜14.0的数，条件是x + y = 8.0〜16.0，R 1基和R 2基可以相同或不同），并且包括至少一种笼型倍半硅氧烷化合物。该组合物适合用作光学元件中的抗反射膜，在固化步骤中具有较小的膜收缩率，具有良好的涂覆表面状态和优异的耐湿性和粘附性，在高温条件下的折射率变化小，并且能够形成低折射率膜。

10. 发明申请

US20100239978A1 PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION 有权
标题翻译：光敏组合物和使用感光组合物的图案形成方法和耐蚀膜
公开(公告)号：US20100239978A1
公开(公告)日：2010-09-23
申请号：US12786127
申请日：2010-05-24
申请人： Kenji Wada , Kunihiko Kodama
发明人： Kenji Wada , Kunihiko Kodama
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： C07D307/33 , C07C381/12 , C07D307/20 , C07D307/32 , C07D307/77 , C07D309/30 , C07D409/12 , C07D409/14 , C07D493/08 , C07D493/14 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A photosensitive composition containing a compound having a specific structure, a pattern-forming method using the photosensitive composition, and a compound having a specific structure used in the photosensitive composition.
摘要翻译：含有具有特定结构的化合物的光敏组合物，使用该感光性组合物的图案形成方法和在感光性组合物中使用的具有特定结构的化合物。

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