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1. 发明申请

US20060110530A1 Method for increasing deposition rates of metal layers from metal-carbonyl precursors 有权
标题翻译：提高金属 - 羰基前体金属层沉积速率的方法
公开(公告)号：US20060110530A1
公开(公告)日：2006-05-25
申请号：US10996145
申请日：2004-11-23
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

2. 发明申请

US20080003360A1 METHOD FOR INCREASING DEPOSITION RATES OF METAL LAYERS FROM METAL-CARBONYL PRECURSORS 有权
标题翻译：从金属碳前驱体增加金属层沉积速率的方法
公开(公告)号：US20080003360A1
公开(公告)日：2008-01-03
申请号：US11856946
申请日：2007-09-18
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.
摘要翻译：通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层化学气相沉积工艺。

3. 发明申请

US20060115593A1 Method for preparing solid precursor tray for use in solid precursor evaporation system 有权
公开(公告)号：US20060115593A1
公开(公告)日：2006-06-01
申请号：US11007961
申请日：2004-12-09
申请人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra Malhotra , Fenton McFeely , Robert Young
发明人： Kenji Suzuki , Emmanuel Guidotti , Gerrit Leusink , Masamichi Hara , Daisuke Kuroiwa , Sandra Malhotra , Fenton McFeely , Robert Young
IPC分类号： B05D1/18 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/16
摘要： In a solid precursor evaporation system configured for use in a thin film deposition system, such as thermal chemical vapor deposition (TCVD), a method for preparing one or more trays of solid precursor is described. The solid precursor may be formed on a coating substrate, such as a tray, using one or more of dipping techniques, spin-on techniques, and sintering techniques.

4. 发明申请

US20060115590A1 Method and system for performing in-situ cleaning of a deposition system 审中-公开
标题翻译：用于进行沉积系统的原位清洗的方法和系统
公开(公告)号：US20060115590A1
公开(公告)日：2006-06-01
申请号：US10998394
申请日：2004-11-29
申请人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kenji Suzuki , Gerrit Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/00
CPC分类号： C23C16/16 , C23C16/4405 , C23C16/4481 , C23C16/4485
摘要： A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.
摘要翻译：通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积诸如钌的金属层的方法包括在沉积系统中引入金属羰基前体，并在基底上沉积金属羰基金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在沉积系统中，金属羰基在固体前驱体蒸发系统中蒸发，并且前体蒸气通过蒸气输送系统输送到处理室。此外，原位清洁系统耦合到蒸气输送系统，以便对沉积系统进行定期清洁。定期原位清洗允许通过在较高温度下操作沉积系统来实现更高的沉积速率，其中前体蒸气可以分解并潜在地沉积在沉积系统的表面上。

5. 发明申请

US20060068588A1 Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursors 审中-公开
标题翻译：从金属羰基前体中低压沉积钌和铼金属层
公开(公告)号：US20060068588A1
公开(公告)日：2006-03-30
申请号：US10953466
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.
摘要翻译：提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。

6. 发明申请

US20050199502A1 Method for electroplating on resistive substrates 审中-公开
标题翻译：电阻基板电镀方法
公开(公告)号：US20050199502A1
公开(公告)日：2005-09-15
申请号：US11123117
申请日：2005-05-06
申请人： Panayotis Andricacos , Hariklia Deligianni , Wilma Horkans , Keith Kwietniak , Michael Lane , Sandra Malhotra , Fenton McFeely , Conal Murray , Kenneth Rodbell , Philippe Vereecken
发明人： Panayotis Andricacos , Hariklia Deligianni , Wilma Horkans , Keith Kwietniak , Michael Lane , Sandra Malhotra , Fenton McFeely , Conal Murray , Kenneth Rodbell , Philippe Vereecken
IPC分类号： C25D5/18 , C25D7/12 , C25D5/02
CPC分类号： C25D5/18 , C25D7/12 , Y10S428/926 , Y10T428/12493 , Y10T428/12528 , Y10T428/12771 , Y10T428/12778 , Y10T428/12903
摘要： A conductive material is electroplated onto a platable resistive metal barrier layer(s) employing a plating bath optionally comprising a super filling additive and a suppressor, and by changing the current or voltage as a function of the area of plated metal. A structure is also provided that comprises a substrate, a platable metal barrier layer(s) located on the substrate and a relatively continuous uniform electroplated layer of a conductive material located on the platable resistive metal barrier layer.
摘要翻译：导电材料电镀在可镀敷的电阻金属阻挡层上，该层使用任选地包含超填充添加剂和抑制剂的电镀槽，并且通过改变作为电镀金属面积的函数的电流或电压。还提供了一种结构，其包括衬底，位于衬底上的可镀金属阻挡层和位于可镀电阻金属阻挡层上的导电材料的相对连续的均匀电镀层。

7. 发明申请

US20050110142A1 Diffusion barriers formed by low temperature deposition 审中-公开
标题翻译：通过低温沉积形成的扩散壁垒
公开(公告)号：US20050110142A1
公开(公告)日：2005-05-26
申请号：US10722934
申请日：2003-11-26
申请人： Michael Lane , Christian Lavoie , Sandra Malhotra , Fenton McFeely , John Yurkas
发明人： Michael Lane , Christian Lavoie , Sandra Malhotra , Fenton McFeely , John Yurkas
IPC分类号： H01L21/285 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/532 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/28556 , H01L23/53223 , H01L23/53238 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A solid state device includes a first material and a second material. A barrier layer is formed between the first material and the second material to prevent diffusion between the first material and the second material. The barrier layer includes a metal form of at least one of Ru and Re. The barrier layer is preferably formed using a low temperature deposition process, where the substrate is less than 400 degrees C.
摘要翻译：固体装置包括第一材料和第二材料。在第一材料和第二材料之间形成阻挡层以防止第一材料和第二材料之间的扩散。阻挡层包括Ru和Re中的至少一种的金属形式。阻挡层优选使用低温沉积工艺形成，其中衬底小于400℃。

8. 发明申请

US20050221002A1 Method for processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US20050221002A1
公开(公告)日：2005-10-06
申请号：US10814768
申请日：2004-03-31
申请人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/458 , C23C16/00
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要翻译：一种在处理室中的陶瓷基板加热器上处理基板的方法。该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

9. 发明申请

US20050221000A1 Method of forming a metal layer 审中-公开
标题翻译：形成金属层的方法
公开(公告)号：US20050221000A1
公开(公告)日：2005-10-06
申请号：US10813680
申请日：2004-03-31
申请人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/02 , C23C16/16 , C23C16/509 , B05D3/00 , C23C16/00 , H05H1/24
CPC分类号： C23C16/5096 , C23C16/02 , C23C16/16
摘要： A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.
摘要翻译：提供了一种用于在衬底上形成具有改善的形态的金属层的方法和加工工具。该方法包括通过将衬底暴露于等离子体中的激发物质来预处理衬底，将预处理的衬底暴露于含有羰基金属前体的工艺气体中，以及在预处理的衬底表面上形成金属层化学气相沉积工艺。金属羰基前体可以含有W（CO）6，Ni（CO）4，Mo（CO）6，CO， 2（CO）8，Rh 4（CO）12，Re 2（CO） Cr（CO）6或Ru 3（CO）12 12或其任何组合，和金属层可以分别含有W，Ni，Mo，Co，Rh，Re，Cr或Ru，或其任何组合。

10. 发明申请

US20050260833A1 Constant emissivity deposition member 失效
标题翻译：恒辐射率沉积元件
公开(公告)号：US20050260833A1
公开(公告)日：2005-11-24
申请号：US10851384
申请日：2004-05-22
申请人： Fenton McFeely , John Yurkas , Sandra Malhotra , Andrew Simon
发明人： Fenton McFeely , John Yurkas , Sandra Malhotra , Andrew Simon
IPC分类号： C23C16/44 , C30B1/00 , C30B35/00 , H01L21/20 , H01L21/285 , H01L21/36 , H01L21/44
CPC分类号： C23C16/4404 , C30B35/00 , H01L21/28556
摘要： A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.
摘要翻译：适于在沉积过程中排出沉积材料的沉积构件可以在沉积期间获得涂层。在任何涂层沉积之前，沉积构件选择这种初始发射率值，沉积构件的发射率在沉积过程中保持基本不变。在代表性的实施例中，沉积构件涂覆有适当的薄层以实现所选择的发射率值。

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