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1. 发明授权

US08748756B2 Electric device and production method therefor 有权
标题翻译：电气装置及其制造方法
公开(公告)号：US08748756B2
公开(公告)日：2014-06-10
申请号：US13583169
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H01L23/28
CPC分类号： H01L51/5246 , H01L27/3276 , H01L27/3288 , H01L51/448 , H05B33/0896 , Y02E10/549 , Y02P70/521 , Y10T29/49002
摘要： An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.
摘要翻译：电气装置包括支撑基板12，设置在设置在支撑基板12上的密封区域中的电路14，设置在支撑基板12上用于将外部电信号输入/输出源与电路14电连接的电线设置在支撑基板12上以围绕密封区域的密封构件16，以及密封基板17，其密封构件16插入在支撑基板12上。电路14包括具有有机层的电子元件24，并且密封构件16的宽度在电布线15和密封构件16相交的交叉区域与不相交的非交叉区域之间不同地区。

2. 发明申请

US20090008745A1 Nitride Compound Semiconductor and Process for Producing the Same 审中-公开
标题翻译：氮化物复合半导体及其制造方法
公开(公告)号：US20090008745A1
公开(公告)日：2009-01-08
申请号：US11658865
申请日：2005-07-28
申请人： Kenji Kasahara , Makoto Sasaki , Masaya Shimizu
发明人： Kenji Kasahara , Makoto Sasaki , Masaya Shimizu
IPC分类号： H01L29/06 , H01L21/205
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/02 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A process for producing a nitride compound semiconductor represented by a general formula, InxGayAlzN (where x+y+Z=1, 0≦x≦1, 0≦y≦1, and 0≦z≦1), characterized in that a non-doped nitride compound semiconductor (A) represented by a general formula, InaGabAlcN (where a+b+c=1, 0≦a≦1, 0≦b≦1, and 0≦c≦1) of a thickness of 500 to 5000 Å is formed between a p-type contact layer and an n-type contact layer at a temperature within a range between 550 and 850° C.
摘要翻译：一种由通式InxGayAlzN（其中x + y + Z =1,0,0≤i≤1,0<= z <= 1）表示的氮化物化合物半导体的制造方法，其特征在于，由通式InaGabAlcN（其中a + b + c = 1,0 <= a <= 1,0,0 <= b <= 1，0 <= 1）表示的非掺杂氮化物化合物半导体（A）在550和850℃之间的温度下，在p型接触层和n型接触层之间形成厚度为500至5000的厚度= c <= 1。

3. 发明申请

US20130033839A1 ELECTRIC DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：电气设备及其生产方法
公开(公告)号：US20130033839A1
公开(公告)日：2013-02-07
申请号：US13583169
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H05K7/06 , B32B37/06
CPC分类号： H01L51/5246 , H01L27/3276 , H01L27/3288 , H01L51/448 , H05B33/0896 , Y02E10/549 , Y02P70/521 , Y10T29/49002
摘要： An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.
摘要翻译：电气装置包括支撑基板12，设置在设置在支撑基板12上的密封区域中的电路14，设置在支撑基板12上用于将外部电信号输入/输出源与电路14电连接的电线设置在支撑基板12上以围绕密封区域的密封构件16，以及密封基板17，其密封构件16插入在支撑基板12上。电路14包括具有有机层的电子元件24，并且密封构件16的宽度在电布线15和密封构件16相交的交叉区域与不相交的非交叉区域之间不同地区。

4. 发明授权

US08653383B2 Electric device and production method therefor 有权
公开(公告)号：US08653383B2
公开(公告)日：2014-02-18
申请号：US13583169
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H01L23/28
摘要： An electric device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, an electric wiring provided on the support substrate 12 for electrically connecting an external electrical signal input/output source with the electric circuit 14, a sealing member 16 provided on the support substrate 12 to surround the sealing region, and a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween. the electric circuit 14 includes an electronic element 24 having an organic layer, and a width of the sealing member 16 differs between an intersection region in which the electric wiring 15 and the sealing member 16 intersect each other and a non-intersection region excluding the intersection region.

5. 发明申请

US20130049184A1 ELECTRIC DEVICE AND PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：电气设备及其生产方法
公开(公告)号：US20130049184A1
公开(公告)日：2013-02-28
申请号：US13583044
申请日：2011-03-04
申请人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
发明人： Kenji Kasahara , Masaya Shimizu , Tomoki Kurata
IPC分类号： H01L23/18 , H01L21/56
CPC分类号： H01L51/525 , H01L27/3244 , H01L27/3281 , H01L51/107 , H01L51/5246
摘要： An electronic device includes a support substrate 12, an electric circuit 14 provided in a sealing region set on the support substrate 12, a sealing member 16 provided on the support substrate 12 to surround the sealing region, a sealing substrate 17 bonded to the support substrate 12 with the sealing member 16 interposed therebetween, and a spacer 23 arranged between the support substrate 12 and the sealing substrate 17. The electric circuit 14 includes an electronic element 24 having an organic layer. The sealing member 16 and the spacer 23 are formed using the same material.
摘要翻译：电子装置包括支撑基板12，设置在支撑基板12上的密封区域中的电路14，设置在支撑基板12上以围绕密封区域的密封部件16，与支撑基板接合的密封基板17 12，其间插入有密封构件16，以及布置在支撑基板12和密封基板17之间的间隔件23.电路14包括具有有机层的电子元件24。密封构件16和间隔件23使用相同的材料形成。

6. 发明申请

US20120181526A1 ORGANIC EL DEVICE 审中-公开
标题翻译：有机EL设备
公开(公告)号：US20120181526A1
公开(公告)日：2012-07-19
申请号：US13498525
申请日：2010-09-22
申请人： Kenji Kasahara , Masaya Shimizu
发明人： Kenji Kasahara , Masaya Shimizu
IPC分类号： H01L51/52
CPC分类号： H01L51/5092 , H01L27/3246 , H01L51/5231 , H01L51/524
摘要： The present invention provides an organic EL device. The organic EL device is provided with a first substrate, an anode that is located on the first substrate, a light emitting layer that is located on the anode, a partition wall that is formed of an insulating material and partitions the light emitting layer, a cathode that covers the light emitting layer and extends on the partition wall, and a second substrate that is superimposed onto the first substrate via a seal member, and in this structure, the cathode has a multilayer structure including an electron injection layer that injects electrons to the light emitting layer, and at least one electrically conductive layer, and the electron injection layer covers the light emitting layer, and the at least one electrically conductive layer covers the electron injection layer.
摘要翻译：本发明提供一种有机EL器件。有机EL元件设置有第一基板，位于第一基板上的阳极，位于阳极上的发光层，由绝缘材料形成并分隔发光层的分隔壁，阴极，其覆盖发光层并在分隔壁上延伸;以及第二基板，其经由密封构件叠加在第一基板上，并且在该结构中，阴极具有多层结构，该多层结构包括将电子注入的电子注入层所述发光层和至少一个导电层，并且所述电子注入层覆盖所述发光层，并且所述至少一个导电层覆盖所述电子注入层。

7. 发明申请

US20060022308A1 Group III-V compound semiconductor and method for producing the same 失效
标题翻译： III-V族化合物半导体及其制造方法
公开(公告)号：US20060022308A1
公开(公告)日：2006-02-02
申请号：US11140236
申请日：2005-05-27
申请人： Masaya Shimizu , Shinichi Morishima , Makoto Sasaki
发明人： Masaya Shimizu , Shinichi Morishima , Makoto Sasaki
IPC分类号： H01L29/12
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007
摘要： A Group III-V compound semiconductor includes, at least, a substrate, a buffer layer of the general formula InuGavAlwN (wherein, 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1) and a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN (wherein, 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1), in this order, wherein the buffer layer has a thickness of at least about 5 Å and not more than about 90 Å. A method is provided for producing the Group III-V compound semiconductor, including forming a buffer layer of the general formula InuGavAlwN on a substrate to give a thickness of at least about 5 Å and not more than about 90 Å at temperatures lower than the growing temperature of the compound semiconductor crystal layer before growing the compound semiconductor crystal layer, and then growing a Group III-V compound semiconductor crystal layer of the general formula InxGayAlzN on the buffer layer.
摘要翻译： III-V族化合物半导体至少包括基底，通式为AlN的缓冲层（其中，0≤u≤1,0<=v≤1,0<= w <= 1，u + v + w = 1）和通式为In的III-V族化合物半导体晶体层（其中，0≤x≤1,0<= y <=1,0.0≤z <= 1，x + y + z = 1），其中缓冲层具有至少约和不大于约的厚度。提供了用于制备III-V族化合物半导体的方法，包括形成通式为III-V族化合物半导体的缓冲层， N，在生长化合物半导体晶体层之前，在比化合物半导体晶体层的生长温度低的温度下，给出至少约不小于约90的厚度，然后生长III-V族在缓冲层上具有通式为Al x Ga y Al y Al z的化合物半导体晶体层。

8. 发明授权

US07754515B2 Compound semiconductor and method for producing same 有权
标题翻译：化合物半导体及其制造方法
公开(公告)号：US07754515B2
公开(公告)日：2010-07-13
申请号：US10558427
申请日：2004-05-28
申请人： Masaya Shimizu , Makoto Sasaki , Yoshihiko Tsuchida
发明人： Masaya Shimizu , Makoto Sasaki , Yoshihiko Tsuchida
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/32
摘要： A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InxGayAlzN (wherein x+y+z=1, 0
摘要翻译：包括具有两个阻挡层的单量子阱结构的组III-V族化合物半导体和由下式表示的量子阱层：In x Ga y Al z N（其中x + y + z = 1,0

9. 发明授权

US07205577B2 Group 3-5 compound semiconductor and light emitting diode 有权
标题翻译：第3-5组化合物半导体和发光二极管
公开(公告)号：US07205577B2
公开(公告)日：2007-04-17
申请号：US10162404
申请日：2002-06-05
申请人： Yasushi Iyechika , Yoshihiko Tsuchida , Yoshinobu Ono , Masaya Shimizu
发明人： Yasushi Iyechika , Yoshihiko Tsuchida , Yoshinobu Ono , Masaya Shimizu
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： A group 3–5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.
摘要翻译：包括具有晶格失配的两层的界面的组3-5化合物半导体，膜厚度为25nm以上的中间层和量子阱层。化合物半导体具有高结晶度和高质量，并且适用于发光二极管。

10. 发明授权

US07167237B2 Test system for optical line which carries out fault search for optical line from user optical terminal side 失效
标题翻译：用户光端机进行光线故障检测的光线测试系统
公开(公告)号：US07167237B2
公开(公告)日：2007-01-23
申请号：US10524067
申请日：2004-06-28
申请人： Masaya Shimizu , Hiroaki Endo , Takashi Sakamoto
发明人： Masaya Shimizu , Hiroaki Endo , Takashi Sakamoto
IPC分类号： G01N21/00
CPC分类号： G01M11/3154 , G01M11/3136 , H04B10/071
摘要： A fault searching system searches for a fault in an optical line connected with an optical fiber carrying out data transmission between a transmission apparatus and a user optical terminal. A connecting unit detaches a terminal portion of the optical line at the user optical terminal, and connects an OTDR to the terminal portion of the optical line. At least one of a test light with a wavelength different from a wavelength of light used for data transmission in the optical line, and a test light whose peak level is less than or equal to a predetermined level, is caused to be incident upon the terminal portion of the optical line. A searching unit searches for a fault in the optical line from the user optical terminal side by detecting backward scattering light or return light from the optical line produced by the test light caused by the OTDR.
摘要翻译：故障搜索系统在与发送装置和用户光学终端之间进行数据传输的光纤连接的光线路中寻找故障。连接单元将用户光学终端处的光线路的终端部分分离，并将OTDR连接到光线路的终端部分。在光线路中用于数据传输的光波长不同的测试光和峰值电平小于或等于预定电平的测试光中的至少一个被入射到终端部分光路。搜索单元通过检测由OTDR引起的由测试光产生的光线路的反向散射光或返回光，从用户光学终端侧检索光线路中的故障。

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