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1. 发明授权

US5148260A Semiconductor device having an improved air-bridge lead structure 失效
标题翻译：具有改进的空气桥引线结构的半导体器件
公开(公告)号：US5148260A
公开(公告)日：1992-09-15
申请号：US578436
申请日：1990-09-07
申请人： Tomotoshi Inoue , Toshiyuki Terada , Kenichi Tomita
发明人： Tomotoshi Inoue , Toshiyuki Terada , Kenichi Tomita
IPC分类号： H01L21/768 , H01L23/482 , H01L23/522
CPC分类号： H01L23/4821 , H01L23/5221 , H01L2924/0002
摘要： A semiconductor device having an improved air-bridge lead structure is provided. The improved air-bridge lead structure has a higher mechanical strength and a lower electric resistance with a smaller electric capacitance.
摘要翻译：提供一种具有改进的气桥引线结构的半导体器件。改进的气桥引线结构具有较高的机械强度和较小的电阻，并具有较小的电容。

2. 发明授权

US5034799A Semiconductor integrated circuit device having a hollow multi-layered lead structure 失效
标题翻译：具有中空多层引线结构的半导体集成电路器件
公开(公告)号：US5034799A
公开(公告)日：1991-07-23
申请号：US479998
申请日：1990-02-14
申请人： Kenichi Tomita , Tomotoshi Inoue , Toshiyuki Terada
发明人： Kenichi Tomita , Tomotoshi Inoue , Toshiyuki Terada
IPC分类号： H01L21/768 , H01L23/522 , H01L23/64
CPC分类号： H01L23/5226 , H01L23/5221 , H01L23/642 , H01L2924/0002
摘要： A highly reliable semiconductor integrated circuit device having a hollow multi-layered lead structure is provided. The device comprises lead-supporting columns that can securely support the multi-layered leads and can also efficiently radiate heat generated in operation.
摘要翻译：提供了具有中空多层引线结构的高度可靠的半导体集成电路器件。该装置包括能够可靠地支撑多层引线的铅支柱，并且还可以有效地辐射在操作中产生的热量。

3. 发明授权

US5273937A Metal semiconductor device and method for producing the same 失效
标题翻译：金属半导体器件及其制造方法
公开(公告)号：US5273937A
公开(公告)日：1993-12-28
申请号：US774169
申请日：1991-10-15
申请人： Kazuya Nishihori , Tomotoshi Inoue , Kenichi Tomita , Hitoshi Mikami , Masami Nagaoka , Naotaka Uchitomi
发明人： Kazuya Nishihori , Tomotoshi Inoue , Kenichi Tomita , Hitoshi Mikami , Masami Nagaoka , Naotaka Uchitomi
IPC分类号： H01L29/47 , H01L21/283
CPC分类号： H01L29/475
摘要： A metal semiconductor device, in which an electrode is formed on a semiconductor substrate to form a Schottky junction therebetween, and the electrode has an oxide film having a first thickness on its upper surface and a non-oxidized portion having a second thickness from the Schottky junction. A method for producing the metal semiconductor device is also disclosed, in which a conductor layer formed on the semiconductor substrate is oxidized in a gas containing oxygen, and a capless annealing of the semiconductor substrate having the oxidized conductor layer thereon is conducted in an atmosphere containing arsenic.
摘要翻译：一种金属半导体器件，其中电极形成在半导体衬底上以在其间形成肖特基结，并且电极在其上表面具有第一厚度的氧化物膜和具有来自肖特基的第二厚度的非氧化部分交界处还公开了一种制造金属半导体器件的方法，其中形成在半导体衬底上的导体层在含氧气体中被氧化，并且在其上具有氧化的导体层的半导体衬底的无限退火在含有砷。

4. 发明授权

US5556814A Method of forming wirings for integrated circuits by electroplating 失效
标题翻译：通过电镀形成集成电路布线的方法
公开(公告)号：US5556814A
公开(公告)日：1996-09-17
申请号：US410744
申请日：1995-03-27
申请人： Tomotoshi Inoue , Misao Yoshimura
发明人： Tomotoshi Inoue , Misao Yoshimura
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L21/02
CPC分类号： H01L21/76885 , H01L2924/0002
摘要： A method for forming wirings of an integrated circuit comprises a step of forming wirings on a substrate, a step of coating the wirings with a thin under metal layer, a step of coating the under metal layer with a mask except a part of the under metal layer, a first etching step of removing the under metal layer which is not coated by the mask to expose upper portions of at least ones of the wirings, an electroplating step of depositing a plating metal layer on the exposed upper portions, a step of removing the mask, and a second etching step of removing all of the remaining under metal layer, whereby said plating metal layer is formed by substantially same material as that of the exposed upper portions or by a material which can be closely contacted with the exposed upper portions and whereby said under metal layer is formed by a material which can be preferentially removed from the exposed upper portions.
摘要翻译：一种用于形成集成电路的配线的方法包括在基板上形成布线的步骤，用薄的金属下层涂覆布线的步骤，用除了金属以外的部分的掩模涂覆下金属层的步骤层，第一蚀刻步骤，去除未被掩模涂覆的下金属层以暴露至少一个布线的上部;电镀步骤，在暴露的上部上沉积电镀金属层;除去掩模和第二蚀刻步骤，去除所有剩余的下层金属层，由此所述电镀金属层由与暴露的上部的材料基本相同的材料形成，或通过与暴露的上部部分紧密接触的材料形成并且由此所述下金属层由可以从暴露的上部优先除去的材料形成。

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