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    • 2. 发明申请
    • PHOTOELECTROCHEMICAL CELL
    • 光电化学电池
    • US20120080310A1
    • 2012-04-05
    • US13375086
    • 2010-06-01
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • C25B9/00C25B1/04
    • C01B3/042C25B1/003Y02E60/364Y02E60/366Y02P20/135
    • A photoelectrochemical cell (1) includes: an optical semiconductor electrode (first electrode) (3) including a conductive substrate (3a) and an n-type semiconductor layer (3b) as an optical semiconductor layer disposed on the conductive substrate (3a); a counter electrode (second electrode) (4) disposed to face the surface of the optical semiconductor electrode (3) on the conductive substrate (3a) side and connected electrically to the conductive substrate (3a); an electrolyte solution (11) containing water and disposed in contact with the surface of the n-type semiconductor layer (3b) and the surface of the counter electrode (4); a container (2) in which the optical semiconductor electrode (3), the counter electrode (4), and the electrolyte solution (11) are disposed; an inlet (5) for supplying water into the container; and an ion passing portion (12) that allows ions to move between the electrolyte solution in a region A on the surface side of the n-type semiconductor layer (3b) and the electrolyte solution in a region B on the opposite side of the region A with respect to the optical semiconductor electrode (3).
    • 光电化学电池(1)包括:设置在导电基板(3a)上的作为光学半导体层的导电基板(3a)和n型半导体层(3b)的光学半导体电极(第一电极)(3) 相对电极(第二电极)(4),与所述导电性基板(3a)侧的所述光半导体电极(3)的表面相对配置并与所述导电性基板(3a)电连接; 包含水并与n型半导体层(3b)的表面和对置电极(4)的表面接触地设置的电解液(11); 其中设置有光学半导体电极(3),对电极(4)和电解质溶液(11)的容器(2) 用于将水供应到所述容器中的入口(5) 以及离子通过部分(12),其允许离子在n型半导体层(3b)的表面侧上的区域A中的电解质溶液与该区域的相对侧的区域B中的电解质溶液之间移动 A相对于光半导体电极(3)。
    • 5. 发明授权
    • Photoelectrochemical cell
    • 光电化学电池
    • US08454807B2
    • 2013-06-04
    • US13016488
    • 2011-01-28
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • C25B13/02C25B1/10C25B9/08
    • C25B1/003C01B3/042H01M14/005Y02E60/364Y02E60/368Y02P20/135
    • A photoelectrochemical cell (1) is a photoelectrochemical cell for decomposing water by irradiation with light so as to produce hydrogen. This photoelectrochemical cell (1) includes: a conductive substrate; a first electrode (optical semiconductor electrode (3)) including an optical semiconductor and disposed on a first main surface of the conductive substrate; a second electrode (counter electrode (4)) disposed in a region on the first main surface of the conductive substrate where the first electrode is not disposed; an electrolyte containing water and disposed in contact with a surface of the first electrode and a surface of the second electrode; a rib (5) formed to separate a space above the surface of the second electrode from a space above the surface of the first electrode and to extend along a flow direction of a gas produced on the surface of the second electrode, the rib being formed of a material that allows ions to pass therethrough and prevents a gas from passing therethrough; and a container (2) containing the conductive substrate, the first electrode, the second electrode, the electrolyte, and the rib.
    • 光电化学电池(1)是用于通过用光照射分解水以产生氢的光电化学电池。 该光电化学电池(1)包括:导电性基板; 包括光学半导体并设置在导电基板的第一主表面上的第一电极(光学半导体电极(3)); 设置在不设置第一电极的导电性基板的第一主面上的区域中的第二电极(对置电极(4)); 含有水并与第一电极的表面和第二电极的表面接触的电解液; 形成为将第二电极的表面上方的空间与第一电极的表面上方的空间分离并且沿着在第二电极的表面上产生的气体的流动方向延伸的肋(5),所述肋形成 允许离子通过其中并防止气体从其中通过的材料; 和包含导电性基板,第一电极,第二电极,电解质和肋的容器(2)。
    • 8. 发明授权
    • Photoelectrochemical cell and energy system using the same
    • 光电化学电池和能量系统使用相同
    • US08236146B2
    • 2012-08-07
    • US12811034
    • 2009-10-29
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • C25B11/04C25B9/06C25B1/04
    • H01M8/0656C25B1/003H01G9/205H01M16/006H01M2008/1095Y02E10/542Y02E60/366Y02P20/135
    • A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and an n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with the surfaces of the n-type semiconductor layer (122) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). The photoelectrochemical cell (100) generates hydrogen by irradiation of the n-type semiconductor layer (122) with light. In the semiconductor electrode (120), relative to the vacuum level, (I) the band edge levels of the conduction band and the valence band in the surface near-field region of the n-type semiconductor layer (122), respectively, are equal to or higher than the band edge levels of the conduction band and the valence band in the junction plane near-field region of the n-type semiconductor layer (122) with the conductor (121), (II) the Fermi level of the junction plane near-field region of the n-type semiconductor layer (122) is higher than the Fermi level of the surface near-field region of the n-type semiconductor layer (122), and (III) the Fermi level of the conductor (121) is higher than the Fermi level of the junction plane near-field region of the n-type semiconductor layer (122).
    • 光电化学电池(100)包括:包括导体(121)和n型半导体层(122)的半导体电极(120); 与所述导体(121)电连接的对电极(130); 与所述n型半导体层(122)和所述对电极(130)的表面接触的电解液(140)。 以及容纳半导体电极(120),对电极(130)和电解质(140)的容器(110)。 光电化学电池(100)通过用光照射n型半导体层(122)来产生氢。 在半导体电极(120)中,相对于真空度,(I)分别在n型半导体层(122)的表面近场区域中的导带和价带的带边缘电平为 等于或高于具有导体(121)的n型半导体层(122)的结平面近场区中的导带和价带的带边缘电平,(II)是所述导体的费米能级 n型半导体层(122)的接面平面近场区域高于n型半导体层(122)的表面近场区域的费米能级,(III)导体的费米能级 (121)高于n型半导体层(122)的结面近场区域的费米能级。
    • 10. 发明申请
    • PHOTOELECTROCHEMICAL CELL AND ENERGY SYSTEM USING THE SAME
    • 光电化学细胞和能量系统
    • US20100282601A1
    • 2010-11-11
    • US12811034
    • 2009-10-29
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • Takaiki NomuraTakahiro SuzukiKenichi TokuhiroTomohiro KurohaNoboru TaniguchiKazuhito HatohShuzo Tokumitsu
    • C25B9/06
    • H01M8/0656C25B1/003H01G9/205H01M16/006H01M2008/1095Y02E10/542Y02E60/366Y02P20/135
    • A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and an n-type semiconductor layer (122); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with the surfaces of the n-type semiconductor layer (122) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). The photoelectrochemical cell (100) generates hydrogen by irradiation of the n-type semiconductor layer (122) with light. In the semiconductor electrode (120), relative to the vacuum level, (I) the band edge levels of the conduction band and the valence band in the surface near-field region of the n-type semiconductor layer (122), respectively, are equal to or higher than the band edge levels of the conduction band and the valence band in the junction plane near-field region of the n-type semiconductor layer (122) with the conductor (121), (II) the Fermi level of the junction plane near-field region of the n-type semiconductor layer (122) is higher than the Fermi level of the surface near-field region of the n-type semiconductor layer (122), and (III) the Fermi level of the conductor (121) is higher than the Fermi level of the junction plane near-field region of the n-type semiconductor layer (122).
    • 光电化学电池(100)包括:包括导体(121)和n型半导体层(122)的半导体电极(120); 与所述导体(121)电连接的对电极(130); 与所述n型半导体层(122)和所述对电极(130)的表面接触的电解液(140)。 以及容纳半导体电极(120),对电极(130)和电解质(140)的容器(110)。 光电化学电池(100)通过用光照射n型半导体层(122)来产生氢。 在半导体电极(120)中,相对于真空度,(I)分别在n型半导体层(122)的表面近场区域中的导带和价带的带边缘电平为 等于或高于具有导体(121)的n型半导体层(122)的结平面近场区中的导带和价带的带边缘电平,(II)是所述导体的费米能级 n型半导体层(122)的接面平面近场区域高于n型半导体层(122)的表面近场区域的费米能级,(III)导体的费米能级 (121)高于n型半导体层(122)的结面近场区域的费米能级。