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1. 发明授权

US07488993B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07488993B2
公开(公告)日：2009-02-10
申请号：US11067627
申请日：2005-02-28
申请人： Kenichi Tokano , Motoshige Kobayashi , Kazuyuki Saito
发明人： Kenichi Tokano , Motoshige Kobayashi , Kazuyuki Saito
IPC分类号： H01L29/51
CPC分类号： H01L23/562 , H01L23/3192 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50 micrometers or greater in thickness residing on parts of the upper surface side of the semiconductor substrate other than at least on the electrode pattern. And a method of manufacturing a semiconductor device, includes: forming elements on a semiconductor substrate; forming electrodes in a predetermined part on the elements; affixing an insulator sheet of 50 micrometers or greater in thickness to the upper surface side of the semiconductor substrate, the insulator sheet being processed to remove some parts so as to be aligned with the electrodes or regions where the elements are provided, processing a back surface side of the semiconductor substrate affixed within the insulator sheet to form the semiconductor substrate of 100 micrometers or lower in thickness, and dicing the semiconductor substrate into semiconductor chips.
摘要翻译：半导体器件包括：厚度为100微米或更小的半导体衬底; 形成在所述半导体衬底上方的电极图案; 以及位于半导体衬底的上表面侧的至少在电极图案上的部分上的厚度为50微米或更大的绝缘膜。一种制造半导体器件的方法包括：在半导体衬底上形成元件; 在元件上的预定部分中形成电极; 将半导体衬底的上表面侧的厚度为50μm以上的绝缘体片固定，对绝缘片进行加工，以除去一些部件，使其与设置有元件的电极或区域对齐，加工后表面将半导体衬底的一侧固定在绝缘片内，以形成厚度为100微米或更小的半导体衬底，并将半导体衬底切割成半导体芯片。

2. 发明申请

US20050208738A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050208738A1
公开(公告)日：2005-09-22
申请号：US11067627
申请日：2005-02-28
申请人： Kenichi Tokano , Motoshige Kobayashi , Kazuyuki Saito
发明人： Kenichi Tokano , Motoshige Kobayashi , Kazuyuki Saito
IPC分类号： H01L21/304 , H01L21/02 , H01L21/301 , H01L21/44 , H01L21/50 , H01L23/00 , H01L23/31
CPC分类号： H01L23/562 , H01L23/3192 , H01L2924/0002 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device, comprises: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50 micrometers or greater in thickness residing on parts of the upper surface side of the semiconductor substrate other than at least on the electrode pattern. And a method of manufacturing a semiconductor device, comprises: forming elements on a semiconductor substrate; forming electrodes in a predetermined part on the elements; affixing an insulator sheet of 50 micrometers or greater in thickness to the upper surface side of the semiconductor substrate, the insulator sheet being processed to remove some parts so as to be aligned with the electrodes or regions where the elements are provided, processing a back surface side of the semiconductor substrate affixed within the insulator sheet to form the semiconductor substrate of 100 micrometers or lower in thickness, and dicing the semiconductor substrate into semiconductor chips.
摘要翻译：一种半导体器件，包括：厚度为100微米或更小的半导体衬底; 形成在所述半导体衬底上方的电极图案; 以及位于半导体衬底的上表面侧的至少在电极图案上的部分上的厚度为50微米或更大的绝缘膜。一种制造半导体器件的方法，包括：在半导体衬底上形成元件; 在元件上的预定部分中形成电极; 将半导体衬底的上表面侧的厚度为50μm以上的绝缘体片固定，对绝缘片进行加工，以除去一些部件，使其与设置元件的电极或区域对齐，加工后表面将半导体衬底的一侧固定在绝缘片内，以形成厚度为100微米或更小的半导体衬底，并将半导体衬底切割成半导体芯片。

3. 发明授权

US06524894B1 Semiconductor device for use in power-switching device and method of manufacturing the same 有权
标题翻译：用于电力开关装置的半导体装置及其制造方法
公开(公告)号：US06524894B1
公开(公告)日：2003-02-25
申请号：US09783303
申请日：2001-02-15
申请人： Hideki Nozaki , Yoshiro Baba , Motoshige Kobayashi
发明人： Hideki Nozaki , Yoshiro Baba , Motoshige Kobayashi
IPC分类号： H01L21332
CPC分类号： H01L29/0834 , H01L29/7395 , H01L29/7397
摘要： An N+ buffer layer formed on the underside of an N− layer includes an inactive region having incompletely activated ions and an active region having highly activated ions. The carrier concentration of the active region is higher than that of the inactive region. In the inactive region, the electrical activation rate X of the ions is expressed as 1%≦X≦30%. It is thus possible to achieve a PT structure using a Raw wafer, which reduces manufacturing costs and suppresses power consumption.
摘要翻译：形成在N-层的下侧上的N +缓冲层包括具有不完全活化的离子的非活性区域和具有高活性离子的活性区域。有源区的载流子浓度高于非活性区的载流子浓度。在非活性区域中，离子的电活化速率X表示为1％<= X <= 30％。因此，可以实现使用原始晶片的PT结构，这降低了制造成本并抑制了功耗。

4. 发明授权

US07737531B2 Wafer including a reinforcing flange formed upright at a periphery and method for manufacturing the same 有权
标题翻译：包括在周边直立形成的加强凸缘的晶片及其制造方法
公开(公告)号：US07737531B2
公开(公告)日：2010-06-15
申请号：US12253610
申请日：2008-10-17
申请人： Yasuharu Sugawara , Motoshige Kobayashi
发明人： Yasuharu Sugawara , Motoshige Kobayashi
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L29/0657 , H01L21/02035 , H01L21/78 , H01L29/66348
摘要： A wafer with an orientation notch being cut in a portion of its circumference, the wafer includes: a reinforcing flange formed upright at periphery; and a thin section surrounded by the reinforcing flange and having a smaller thickness than the reinforcing flange. The reinforcing flange includes a circumferential portion formed upright along the circumference and a notch portion formed upright near the orientation notch, and a width of the circumferential portion as viewed parallel to a major surface of the wafer is smaller than a depth of the orientation notch as viewed parallel to the major surface.
摘要翻译：具有在其圆周的一部分上被切割的取向凹口的晶片，所述晶片包括：在周边竖立形成的加强凸缘; 以及由加强凸缘包围并且具有比加强凸缘更小的厚度的薄部分。加强凸缘包括沿着圆周竖直形成的圆周部分和在定位凹口附近形成的切口部分，并且与晶片的主表面平行的圆周部分的宽度小于定向切口的深度，平行于主表面观察。

5. 发明授权

US08148240B2 Method of manufacturing semiconductor chips 有权
标题翻译：制造半导体芯片的方法
公开(公告)号：US08148240B2
公开(公告)日：2012-04-03
申请号：US12545573
申请日：2009-08-21
申请人： Motoshige Kobayashi , Hideki Nozaki
发明人： Motoshige Kobayashi , Hideki Nozaki
IPC分类号： H01L21/304
CPC分类号： H01L21/6835 , H01L21/6836 , H01L29/0657 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834
摘要： A semiconductor wafer is prepared. The wafer has a first and a second surface opposite to each other, and has a recess portion and a rim portion. The semiconductor wafer has semiconductor elements formed on the first surface. The rim portion surrounds the recess portion. The recess portion and the rim portion are composed of the first and second surfaces. The recess portion is formed so as to recede toward the first surface. A tape is adhered to the second surface of the semiconductor wafer. At least the recess portion of the semiconductor wafer is placed on a stage. The tape is sandwiched between the recess portion and the stage. Laser beam is irradiated to the recess portion from the side of the first surface and along predetermined dicing lines. The recess portion is cut off to divide the semiconductor wafer into chips.
摘要翻译：准备半导体晶片。晶片具有彼此相对的第一和第二表面，并且具有凹部和边缘部。半导体晶片具有形成在第一表面上的半导体元件。边缘部分围绕凹部。凹部和边缘部由第一表面和第二表面构成。凹部形成为朝向第一面后退。胶带粘附到半导体晶片的第二表面。至少将半导体晶片的凹部放置在台上。带被夹在凹部和台之间。激光束从第一表面的一侧沿着预定的切割线照射到凹部。将凹部切断，将半导体晶片分割成芯片。

6. 发明申请

US20080296611A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080296611A1
公开(公告)日：2008-12-04
申请号：US11871541
申请日：2007-10-12
申请人： Motoshige Kobayashi , Hideki Nozaki , Masanobu Tsuchitani
发明人： Motoshige Kobayashi , Hideki Nozaki , Masanobu Tsuchitani
IPC分类号： H01L29/772 , H01L21/332
CPC分类号： H01L29/7395 , H01L24/93 , H01L29/0834 , H01L29/0847 , H01L29/7397 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer having a first major surface, a second major surface provided on opposite side of the first major surface, and a channel formation region provided in a surface portion on the first major surface side; a first main electrode provided inside a dicing street on the first major surface of the semiconductor layer; a second main electrode provided inside a dicing street on the second major surface of the semiconductor layer; and a control electrode opposed to the channel formation region across an insulating film.
摘要翻译：半导体器件包括：具有第一主表面的半导体层，设置在第一主表面的相对侧上的第二主表面和设置在第一主表面侧的表面部分中的沟道形成区域; 设置在半导体层的第一主表面上的切割街道内的第一主电极; 设置在半导体层的第二主表面上的切割街道内的第二主电极; 以及与跨越绝缘膜的沟道形成区域相对的控制电极。

7. 发明申请

US20100203688A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100203688A1
公开(公告)日：2010-08-12
申请号：US12759457
申请日：2010-04-13
申请人： Motoshige Kobayashi , Hideki Nozaki , Masanobu Tsuchitani
发明人： Motoshige Kobayashi , Hideki Nozaki , Masanobu Tsuchitani
IPC分类号： H01L21/336 , H01L21/78
CPC分类号： H01L29/7395 , H01L24/93 , H01L29/0834 , H01L29/0847 , H01L29/7397 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer having a first major surface, a second major surface provided on opposite side of the first major surface, and a channel formation region provided in a surface portion on the first major surface side; a first main electrode provided inside a dicing street on the first major surface of the semiconductor layer; a second main electrode provided inside a dicing street on the second major surface of the semiconductor layer; and a control electrode opposed to the channel formation region across an insulating film.
摘要翻译：半导体器件包括：具有第一主表面的半导体层，设置在第一主表面的相对侧上的第二主表面和设置在第一主表面侧的表面部分中的沟道形成区域; 设置在半导体层的第一主表面上的切割街道内的第一主电极; 设置在半导体层的第二主表面上的切割街道内的第二主电极; 以及与跨越绝缘膜的沟道形成区域相对的控制电极。

8. 发明申请

US20100048000A1 METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100048000A1
公开(公告)日：2010-02-25
申请号：US12545573
申请日：2009-08-21
申请人： Motoshige Kobayashi , Hideki Nozaki
发明人： Motoshige Kobayashi , Hideki Nozaki
IPC分类号： H01L21/304
CPC分类号： H01L21/6835 , H01L21/6836 , H01L29/0657 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834
摘要： A semiconductor wafer is prepared. The wafer has a first and a second surface opposite to each other, and has a recess portion and a rim portion. The semiconductor wafer has semiconductor elements formed on the first surface. The rim portion surrounds the recess portion. The recess portion and the rim portion are composed of the first and second surfaces. The recess portion is formed so as to recede toward the first surface. A tape is adhered to the second surface of the semiconductor wafer. At least the recess portion of the semiconductor wafer is placed on a stage. The tape is sandwiched between the recess portion and the stage. Laser beam is irradiated to the recess portion from the side of the first surface and along predetermined dicing lines. The recess portion is cut off to divide the semiconductor wafer into chips.
摘要翻译：准备半导体晶片。晶片具有彼此相对的第一和第二表面，并且具有凹部和边缘部。半导体晶片具有形成在第一表面上的半导体元件。边缘部分围绕凹部。凹部和边缘部由第一表面和第二表面构成。凹部形成为朝向第一面后退。胶带粘附到半导体晶片的第二表面。至少将半导体晶片的凹部放置在台上。带被夹在凹部和台之间。激光束从第一表面的一侧沿着预定的切割线照射到凹部。将凹部切断，将半导体晶片分割成芯片。

9. 发明申请

US20090102020A1 WAFER AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：其制造方法及其制造方法
公开(公告)号：US20090102020A1
公开(公告)日：2009-04-23
申请号：US12253610
申请日：2008-10-17
申请人： Yasuharu SUGAWARA , Motoshige Kobayashi
发明人： Yasuharu SUGAWARA , Motoshige Kobayashi
IPC分类号： H01L29/06 , H01L21/311
CPC分类号： H01L29/0657 , H01L21/02035 , H01L21/78 , H01L29/66348
摘要： A wafer with an orientation notch being cut in a portion of its circumference, the wafer includes: a reinforcing flange formed upright at periphery; and a thin section surrounded by the reinforcing flange and having a smaller thickness than the reinforcing flange. The reinforcing flange includes a circumferential portion formed upright along the circumference and a notch portion formed upright near the orientation notch, and a width of the circumferential portion as viewed parallel to a major surface of the wafer is smaller than a depth of the orientation notch as viewed parallel to the major surface.
摘要翻译：具有在其圆周的一部分上被切割的取向凹口的晶片，所述晶片包括：在周边竖立形成的加强凸缘; 以及由加强凸缘包围并且具有比加强凸缘更小的厚度的薄部分。加强凸缘包括沿着圆周竖直形成的圆周部分和在定位凹口附近形成的切口部分，并且与晶片的主表面平行的圆周部分的宽度小于定向切口的深度，平行于主表面观察。

10. 发明授权

US06562705B1 Method and apparatus for manufacturing semiconductor element 失效
标题翻译：用于制造半导体元件的方法和装置
公开(公告)号：US06562705B1
公开(公告)日：2003-05-13
申请号：US09696167
申请日：2000-10-26
申请人： Takashi Obara , Hideki Nozaki , Motoshige Kobayashi
发明人： Takashi Obara , Hideki Nozaki , Motoshige Kobayashi
IPC分类号： H01L2126
CPC分类号： H01L29/66333 , H01L21/26513 , H01L21/268 , H01L21/28512
摘要： A laser heating apparatus for forming an electrode on one surface of an Si chip provided on an Si wafer, thereby producing a semiconductor element, comprises a high vacuum chamber having a light transmission window, an XY table contained in the high vacuum chamber for mounting the Si wafer thereon, heater contained in the high vacuum chamber for heating and evaporating an impurity in a solid state, and laser beam applying means for applying a laser beam to the Si chip placed on the XY table from the outside of the high vacuum chamber through the light transmission window, thereby implanting the impurity into the Si in chip and activating the implanted impurity.
摘要翻译：一种激光加热装置，用于在Si晶片上设置的Si芯片的一个表面上形成电极，从而制造半导体元件，包括具有透光窗的高真空室，包含在高真空室中的XY台，用于安装 Si晶片，包含在用于加热和蒸发固态杂质的高真空室中的加热器，以及激光束施加装置，用于从高真空室的外部向位于XY工作台上的Si芯片施加激光束，激光束施加装置通过透光窗，从而将杂质注入芯片中的Si并激活注入的杂质。

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