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1. 发明授权

US5049970A High resistive element 失效
标题翻译：高电阻元件
公开(公告)号：US5049970A
公开(公告)日：1991-09-17
申请号：US537154
申请日：1990-06-12
申请人： Kenichi Tanaka , Shigeo Onishi , Toshiyuki Okumura , Keizo Sakiyama
发明人： Kenichi Tanaka , Shigeo Onishi , Toshiyuki Okumura , Keizo Sakiyama
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8244 , H01L27/11
CPC分类号： H01L27/1112 , Y10S257/904
摘要： A high resistive element is provided that constitutes an element of integrated circuits comprising an oxide film formed on a semiconductor substrate and a polysilicon film formed on the oxide film. The high resistive element is prepared by ion injection of silicon ions and conductive impurities in the oxide film through the polysilicon film.
摘要翻译：提供高电阻元件，其构成包括形成在半导体衬底上的氧化物膜和形成在氧化膜上的多晶硅膜的集成电路的元件。通过多晶硅膜在氧化膜中离子注入硅离子和导电杂质来制备高电阻元件。

2. 发明申请

US20130010294A1 OPTICAL MEASUREMENT ANALYSIS DEVICE, STORAGE ROOM, ELECTROMAGNETIC-WAVE GENERATING DEVICE, AND OPTICAL MEASUREMENT ANALYSIS METHOD 审中-公开
标题翻译：光学测量分析装置，存储室，电磁波发生装置和光学测量分析方法
公开(公告)号：US20130010294A1
公开(公告)日：2013-01-10
申请号：US13531140
申请日：2012-06-22
申请人： Kyoko MATSUDA , Toshiyuki Okumura
发明人： Kyoko MATSUDA , Toshiyuki Okumura
IPC分类号： G01J3/28
CPC分类号： G01N21/3563
摘要： There is provided an optical measurement analysis device capable of applying light to substantially the entire surface of a to-be-analyzed object for improving the analysis accuracy. The optical measurement analysis device according to the present embodiment includes a container, a light source, a light irradiation unit, a light reception unit, a spectroscope unit, and an analyzing unit for analyzing an optical spectrum obtained by the spectroscope unit. The container has an inner wall adapted to reflect light reflected by the to-be-analyzed object and light transmitted therethrough.
摘要翻译：提供了一种光学测量分析装置，其能够基本上对待分析对象的整个表面施加光，以提高分析精度。根据本实施例的光学测量分析装置包括容器，光源，光照射单元，光接收单元，分光单元和用于分析由分光单元获得的光谱的分析单元。该容器具有适于反射由被分析物体反射的光的内壁和透过其中的光。

3. 发明授权

US07864412B2 Semiconductor optical amplifier device amplifying external light signal and driving apparatus therefor 有权
标题翻译：放大外部光信号的半导体光放大器装置及其驱动装置
公开(公告)号：US07864412B2
公开(公告)日：2011-01-04
申请号：US12018034
申请日：2008-01-22
申请人： Kyoko Matsuda , Toshiyuki Okumura
发明人： Kyoko Matsuda , Toshiyuki Okumura
IPC分类号： H01S5/00 , H04B10/12
CPC分类号： H01S5/50 , H01S5/024 , H01S5/02415 , H01S5/0609 , H01S5/06251 , H01S5/06821 , H01S5/0683 , H01S2301/02
摘要： An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.
摘要翻译：有源层具有由InGaAsP形成的量子阱结构，并且包括可饱和吸收区域和光学放大区域。对于可饱和吸收区域，通过p电极施加电压，与光放大区域无关。对于光放大区域，电流分别通过p电极注入。通过将白噪声的光噪声添加到假设二进制光强度为“1”或“0”的光信号中，产生通过入射平面进入的输入光引脚。可饱和吸收区域和光放大区域形成为波形转换元件提供双稳半导体激光器的条件。

4. 发明申请

US20090003769A1 OPTICAL ISOLATOR 审中-公开
标题翻译：光学隔离器
公开(公告)号：US20090003769A1
公开(公告)日：2009-01-01
申请号：US12126786
申请日：2008-05-23
申请人： Yasuo FUKAI , Toshiyuki Okumura
发明人： Yasuo FUKAI , Toshiyuki Okumura
IPC分类号： G02B6/26 , G02B6/12
CPC分类号： G02B6/122 , G02B6/2746 , G02F1/0147
摘要： On a surface of an Si layer of a substrate, a plurality of optical waveguides are formed that extend linearly in the Y-axis direction and that are separated from each other by a predetermined spacing in the X-axis direction. These optical waveguides each have a width that monotonously increases in the X-axis direction such that an amount of change of the equivalent refractive index of optical waveguides per unit length is constant in the X-axis direction. In this way, an optical isolator is obtained that can operate for an input light in any state of polarization and that can remove a returned light in any state of polarization without allowing the light to return to an input portion.
摘要翻译：在基板的Si层的表面上形成有在X轴方向上以规定的间隔在Y轴方向上呈线状延伸的多个光波导。这些光波导各自具有在X轴方向上单调增加的宽度，使得每单位长度的光波导的当量折射率的变化量在X轴方向上恒定。以这种方式，获得可以以任何偏振状态对输入光进行操作的光学隔离器，并且可以在任何偏振状态下去除返回的光，而不允许光返回到输入部分。

5. 发明申请

US20060120665A1 Variable demultiplexer 有权
标题翻译：可变解复用器
公开(公告)号：US20060120665A1
公开(公告)日：2006-06-08
申请号：US11292973
申请日：2005-12-02
申请人： Yoshimichi Kato , Toshiyuki Okumura
发明人： Yoshimichi Kato , Toshiyuki Okumura
IPC分类号： G02B6/28
CPC分类号： G02B6/1225 , G02B6/12007 , G02F1/0147 , G02F1/313 , G02F2202/32 , G02F2203/585
摘要： A small variable demultiplexer capable of improving yield and stabilizing characteristics can be obtained. The small variable demultiplexer includes an SiO2 layer serving as a base medium, a waveguide array, a heater serving as an external refractive index modulating unit and a heat sink serving as the external refractive index modulating unit. The waveguide array is arranged on the SiO2 layer. The waveguide array is formed of the plurality of Si photonic wire waveguides serving as waveguides. The heater and the heat sink provide a refractive index gradient which is formed in the direction perpendicular to the extension direction of the Si photonic wire waveguide, and is variable depending on the plurality of Si photonic wire waveguides. The Si photonic wire waveguide has a one-dimensional photonic crystal structure in the extension direction of the Si photonic wire waveguide.
摘要翻译：可以获得能够提高产量和稳定特性的小型可变解复用器。小可变解复用器包括用作基底介质的SiO 2层，波导阵列，用作外部折射率调制单元的加热器和用作外部折射率调制单元的散热器。波导阵列布置在SiO 2层上。波导阵列由用作波导的多个Si光子线波导形成。加热器和散热器提供在垂直于Si光子线波导的延伸方向的方向上形成的折射率梯度，并且根据多个Si光子线波导可变。 Si光子线波导在Si光子线波导的延伸方向上具有一维光子晶体结构。

6. 发明授权

US06956882B2 Gallium nitride semiconductor light emitting device having multi-quantum-well structure active layer, and semiconductor laser light source device 有权
公开(公告)号：US06956882B2
公开(公告)日：2005-10-18
申请号：US10050078
申请日：2002-01-17
申请人： Toshiyuki Okumura
发明人： Toshiyuki Okumura
IPC分类号： H01L29/06 , H01L33/06 , H01L33/32 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/22 , H01S5/3415 , H01S5/343 , H01S5/34333
摘要： A gallium nitride semiconductor laser device has an active layer (6) made of a nitride semiconductor containing at least indium and gallium between an n-type cladding layer (5) and a p-type cladding layer (9). The active layer (6) is composed of two quantum well layers (14) and a barrier layer (15) interposed between the quantum well layers, and constitutes an oscillating section of the semiconductor laser device. The quantum well layers (14) and the barrier layer (15) have thicknesses of, preferably, 10 nm or less. In this semiconductor laser device, electrons and holes can be uniformly distributed in the two quantum well layers (14). In addition, electrons and holes are effectively injected into the quantum well layers from which electrons and holes have already been disappeared by recombination. Consequently, the semiconductor laser device has an excellent laser oscillation characteristic.

7. 发明授权

US06842470B2 Nitride-type compound semiconductor laser device and laser apparatus incorporating the same 有权
标题翻译：氮化物型化合物半导体激光装置及其结合的激光装置
公开(公告)号：US06842470B2
公开(公告)日：2005-01-11
申请号：US10302538
申请日：2002-11-22
申请人： Susumu Omi , Toshiyuki Okumura , Kazuhiko Inoguchi
发明人： Susumu Omi , Toshiyuki Okumura , Kazuhiko Inoguchi
IPC分类号： H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/0425 , H01S5/2219 , H01S5/2231
摘要： A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.
摘要翻译：氮化物型化合物半导体激光器件包括衬底和设置在衬底上的层状结构。在层叠结构中具有比有源层的带隙小的带隙的光吸收层设置在设置在与安装面相对于有源层的一侧的包层之间的位置和表面与安装表面相对的分层结构。

8. 发明授权

US06549552B1 Nitride-type compound semiconductor laser device and laser apparatus incorporating the same 有权
标题翻译：氮化物型化合物半导体激光装置及其结合的激光装置
公开(公告)号：US06549552B1
公开(公告)日：2003-04-15
申请号：US09143608
申请日：1998-08-31
申请人： Susumu Omi , Toshiyuki Okumura , Kazuhiko Inoguchi
发明人： Susumu Omi , Toshiyuki Okumura , Kazuhiko Inoguchi
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/0425 , H01S5/2219 , H01S5/2231
摘要： A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.
摘要翻译：氮化物型化合物半导体激光器件包括衬底和设置在衬底上的层状结构。在层叠结构中具有比有源层的带隙小的带隙的光吸收层设置在设置在与安装面相对于有源层的一侧的包层之间的位置和表面与安装表面相对的分层结构。

9. 发明授权

US5926019A System for evaluating the play back of magnetoresistive heads 失效
标题翻译：用于评估磁阻头的回放的系统
公开(公告)号：US5926019A
公开(公告)日：1999-07-20
申请号：US823241
申请日：1997-03-24
申请人： Toshiyuki Okumura
发明人： Toshiyuki Okumura
IPC分类号： G11B5/39 , G01R29/26 , G01R31/28 , G11B5/012 , G11B5/455 , G11B5/48 , G11B23/00 , G01R31/00
CPC分类号： G11B5/455 , G01R29/26 , G01R31/2825 , G11B23/0007 , G11B5/012 , G11B5/3967 , G11B5/4806 , G11B5/4886
摘要： For evaluating Barkhausen noise of a magnetoresistive head in a frequency range where it is used for read/write of recording media, in an inspection device of a magnetoresistive head (10) of the invention having an external magnetic field generator (1) for applying an external magnetic field to a magnetoresistive element (11) of the magnetoresistive head, and a noise measurement section (2) for evaluating noise of a signal output of the magnetoresistive element according to the external magnetic field, an inductive head (20) is applied in the external magnetic field generator for generating the external magnetic field.
摘要翻译：为了评估在用于记录介质的读/写的频率范围内的磁阻头的巴克豪森噪声，在具有外部磁场发生器（1）的本发明的磁阻磁头（10）的检查装置中，磁阻头的磁阻元件（11）的外部磁场和用于根据外部磁场评估磁阻元件的信号输出的噪声的噪声测量部（2），将感应头（20）应用于用于产生外部磁场的外部磁场发生器。

10. 发明授权

US4980875A Magneto-optical disk with perpendicular magnetic anisotropy film and high corrosion-resistant film 失效
标题翻译：具有垂直磁各向异性薄膜和高耐腐蚀薄膜的磁光盘
公开(公告)号：US4980875A
公开(公告)日：1990-12-25
申请号：US264381
申请日：1988-10-31
申请人： Nobuyuki Ishiwata , Chizuko Wakabayashi , Takayuki Matsumoto , Toshiyuki Okumura , Junichi Homma , Susumu Ito
发明人： Nobuyuki Ishiwata , Chizuko Wakabayashi , Takayuki Matsumoto , Toshiyuki Okumura , Junichi Homma , Susumu Ito
IPC分类号： G11B11/10 , G11B11/105
CPC分类号： G11B11/10584 , G11B11/10586
摘要： A Magneto-Optical disk having a transparent substrate, a Magneto-Optical film formed on the transparent substrate and a high corrosion-resistant film laminated on the Magneto-Optical film. The Magneto-Optical film is made of a perpendicular magnetic anisotropy material, the corrosion-resistant film is made of a metal or metal alloy. A foundation protecting layer may be formed on the transparent substrate with the Magneto-Optical film and the corrosion resistant film formed thereon. The Magneto-Optical film may be a plurality of films laminated alternately with a plurality of corrosion-resistant films.
摘要翻译：具有透明基板的磁光盘，形成在透明基板上的磁光膜和层叠在磁光膜上的高耐腐蚀膜。磁光膜由垂直磁各向异性材料制成，耐腐蚀膜由金属或金属合金制成。可以在透明基板上形成基础保护层，其上形成有磁光膜和耐腐蚀膜。磁光膜可以是与多个耐腐蚀膜交替层叠的多个膜。

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