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1. 发明授权

US5885916A Dielectric material having a low dielectric loss factor for high-frequency use 失效
标题翻译：具有低介电损耗因数的介电材料用于高频用途
公开(公告)号：US5885916A
公开(公告)日：1999-03-23
申请号：US931499
申请日：1997-09-16
申请人： Kenichi Tajima , Hideki Uchimura , Koichi Tanaka , Shoji Kohsaka , Hiroshi Maruyama
发明人： Kenichi Tajima , Hideki Uchimura , Koichi Tanaka , Shoji Kohsaka , Hiroshi Maruyama
IPC分类号： C04B35/584 , C04B35/593 , C04B35/622 , C04B41/50 , C04B41/87 , C23C16/511 , H01B3/12 , H01J23/40 , H01P1/08 , B32B18/00
CPC分类号： C04B41/009 , C04B35/584 , C04B35/593 , C04B35/5935 , C04B35/62222 , C04B41/5031 , C04B41/5042 , C04B41/5063 , C04B41/87 , C23C16/511 , H01B3/12 , H01J23/40 , H01P1/08 , H01J2223/40
摘要： A dielectric material having a low dielectric loss factor for high-frequency use, which comprises a sintered product of silicon nitride chiefly composed of silicon nitride and containing at least oxygen as an impurity component or oxygen as an impurity component and a compound of an element of the Group 3a of periodic table, wherein said sintered product contains aluminum in an amount which is not larger than 2% by weight reckoned as an oxide thereof having relative densities of not smaller than 97% and has a dielectric loss factor at 10 GHz ofnot larger than 5.times.10.sup.-4. The dielectric material has excellent mechanical properties such as large strength and excellent chemical stability, features small dielectric loss factor in high-frequency regions, and is suited for use as a material for high-frequency oscillators, antennas, filters and electronic circuit boards. In particular, those dielectric materials are suited for use as window materials for introducing high frequencies in a high-frequency plasma-generating CVD apparatus, a microwave wave output unit and an oscillator.
摘要翻译：一种具有低介电损耗因子用于高频用途的电介质材料，其包括主要由氮化硅组成的氮化硅和至少含有氧作为杂质成分或氧作为杂质成分的烧结体，以及元素的化合物元素周期表的第3a族，其中所述烧结产物含有不大于2重量％的铝，其相对密度不低于97％且其10千兆赫的介电损耗系数不大超过5x10-4。电介质材料具有优异的机械性能，例如强度高，化学稳定性优异，在高频区域具有小的介电损耗因子，适用于高频振荡器，天线，滤波器和电子电路板的材料。特别地，这些介电材料适合用作在高频等离子体产生CVD装置，微波波输出单元和振荡器中引入高频的窗口材料。

2. 发明授权

US5804523A Sintered product of silicon nitride 失效
标题翻译：氮化硅烧结制品
公开(公告)号：US5804523A
公开(公告)日：1998-09-08
申请号：US853410
申请日：1997-05-09
申请人： Takehiro Oda , Koichi Tanaka , Tomohiro Iwaida , Sentaro Yamamoto , Shoji Kohsaka , Masahiro Sato , Hideki Uchimura , Kenichi Tajima
发明人： Takehiro Oda , Koichi Tanaka , Tomohiro Iwaida , Sentaro Yamamoto , Shoji Kohsaka , Masahiro Sato , Hideki Uchimura , Kenichi Tajima
IPC分类号： C04B35/593 , C04B35/587
CPC分类号： C04B35/593 , C04B35/5935
摘要： A sintered product of silicon nitride containing not smaller than 70 mol % of a .beta.-silicon nitride as well as an element of the Group 3a at least including Lu of periodic table and impurity oxygen, wherein when the content of the element of the Group 3a of periodic table and the content of the impurity oxygen are, respectively, expressed being reckoned as the amount of an oxide of the element of the Group 3a of periodic table (RE.sub.2 O.sub.3) and as the amount of SiO.sub.2 of impurity oxygen, their total amount is from 2 to 30 mol %, the molar ratio (SiO.sub.2 /RE.sub.2 O.sub.3) of the amount of the element of the Group 3a of periodic table reckoned as the oxide (RE.sub.2 O.sub.3) thereof to the amount of impurity oxygen reckoned as SiO.sub.2 is from 1.6 to 10, and the intergranular phase of the sintered product chiefly comprises a crystal phase consisting of the element of the Group 3a of periodic table, silicon and oxygen and a process for producing the same. The sintered product has a large strength from room temperature through up to high temperatures and maintains excellent resistance against oxidation even at high temperatures, and exhibits excellent resistance against creeping and excellent breaking toughness.
摘要翻译：包含不小于70mol％的β-氮化硅的氮化硅的烧结产品以及至少包括Lu的元素周期表和杂质氧的第3a族的元素，其中当第3a族元素的含量的周期表和杂质氧的含量分别表示为元素周期表（RE 2 O 3）的第3a族元素的氧化物的量和杂质氧的SiO 2的量，它们的总量是 2〜30摩尔％时，作为氧化物（RE 2 O 3）的元素周期表中的元素的量与作为SiO 2计算的杂质氧的量的摩尔比（SiO 2 / RE 2 O 3）为1.6〜10 ，并且烧结体的晶间相主要包含由元素周期表第3a族元素，硅和氧组成的结晶相及其制造方法。该烧结体从室温至高温具有很大的强度，即使在高温下也能保持优异的抗氧化性，并且具有优异的抗蠕变性和优异的断裂韧性。

3. 发明申请

US20050241690A1 Thermoelectric Module 审中-公开
标题翻译：热电模块
公开(公告)号：US20050241690A1
公开(公告)日：2005-11-03
申请号：US11150707
申请日：2005-06-09
申请人： Kenichi Tajima , Koichi Tanaka
发明人： Kenichi Tajima , Koichi Tanaka
IPC分类号： H01L35/00 , H01L35/04 , H01L35/08 , H01L35/10 , H01L35/28 , H01L35/34 , H01L37/00
CPC分类号： H01L35/08 , H01L35/10
摘要： A thermoelectric module 11 includes support substrates 1a and 1b, the same numbers of N-type thermoelectric elements 2a and P-type thermoelectric elements 2b disposed on the support substrates 1a and 1b, wiring conductors 3a and 3b that electrically connect between the thermoelectric elements in series and an external connection terminal 4 electrically connected to the wiring conductor 3a. The N-type thermoelectric elements 2a and the P-type thermoelectric elements 2b have different values of resistivity.
摘要翻译：热电模块11包括支撑基板1a和1b，设置在支撑基板1a和1b上的相同数量的N型热电元件2a和P型热电元件2b，布线导体3a和3b 串联的热电元件与电连接到布线导体3a的外部连接端子4电连接。 N型热电元件2a和P型热电元件2b具有不同的电阻率值。

4. 发明授权

US07939744B2 Thermoelectric element 有权
标题翻译：热电元件
公开(公告)号：US07939744B2
公开(公告)日：2011-05-10
申请号：US10226087
申请日：2002-08-21
申请人： Masato Fukudome , Kazuhiro Nishizono , Koichi Tanaka , Kenichi Tajima
发明人： Masato Fukudome , Kazuhiro Nishizono , Koichi Tanaka , Kenichi Tajima
IPC分类号： H01L35/30 , H01L35/28 , H01L35/16 , H01L35/20 , C01B9/00 , C01B25/14 , C01B19/04 , C04B35/00
CPC分类号： H01L35/16 , H01L35/32
摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.
摘要翻译：由半导体烧结体形成的热电元件包括选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件，。

5. 发明申请

US20070006911A1 Thermoelectric Element 审中-公开
标题翻译：热电元件
公开(公告)号：US20070006911A1
公开(公告)日：2007-01-11
申请号：US11531193
申请日：2006-09-12
申请人： Masato FUKUDOME , Kazuhiro Nishizono , Koichi Tanaka , Kenichi Tajima
发明人： Masato FUKUDOME , Kazuhiro Nishizono , Koichi Tanaka , Kenichi Tajima
IPC分类号： H01L35/34
CPC分类号： H01L35/16 , H01L35/32
摘要： A thermoelectric element formed of a sintered body of a semiconductor comprising at least two kinds of elements selected from the group consisting of Bi, Te, Se and Sb, and having a micro-Vickers' hardness of not smaller than 0.5 GPa. The thermoelectric element has a hardness of not smaller than 0.5 GPa, and exhibits a large resistance against deformation, and is not easily broken by deformation. As a result, breakage due to deformation is prevented and a highly reliable thermoelectric element is realized even when a shape factor which is a ratio of the sectional area of the thermoelectric element to the height thereof, is increased and even when the element density is increased.
摘要翻译：由半导体烧结体形成的热电元件包括选自由Bi，Te，Se和Sb组成的组中的至少两种元素，并且具有不小于0.5GPa的微维氏硬度。该热电元件具有不小于0.5GPa的硬度，并且表现出较大的抗变形能力，并且不容易因变形而破裂。结果，即使当作为热电元件的截面积与其高度的比例的比例的形状因子增加时，即使元件密度增加，也可以防止由于变形引起的破损，并且即使形成高温可靠的热电元件，。

6. 发明授权

US08519256B2 Thermoelectric material, thermoelectric element, thermoelectric module and method for manufacturing the same 有权
标题翻译：热电材料，热电元件，热电模块及其制造方法
公开(公告)号：US08519256B2
公开(公告)日：2013-08-27
申请号：US13227314
申请日：2011-09-07
申请人： Kenichi Tajima , Koichi Tanaka
发明人： Kenichi Tajima , Koichi Tanaka
IPC分类号： H01L35/16
CPC分类号： H01L35/16 , C22C12/00 , H01L23/38 , H01L35/34 , H01L2924/0002 , H01L2924/00
摘要： T provide an N type thermoelectric material having figure of the merit improved to be comparable to or higher than that of P type thermoelectric material, the N type thermoelectric material of the present invention contains at least one kind of Bi and Sb and at least one kind of Te and Se as main components, and contains bromine (Br) and iodine (I) to have carrier in such a concentration that corresponds to the contents of bromine (Br) and iodine (I).
摘要翻译： T提供具有改善了与P型热电材料相当或更高的品质因数的N型热电材料，本发明的N型热电材料包含至少一种Bi和Sb以及至少一种的Te和Se为主要成分，并含有溴（Br）和碘（I），其载体的浓度对应于溴（Br）和碘（I）的含量。

7. 发明申请

US20150030064A1 SIGNAL TRANSMISSION SYSTEM 有权
标题翻译：信号传输系统
公开(公告)号：US20150030064A1
公开(公告)日：2015-01-29
申请号：US14379078
申请日：2013-03-19
申请人： Kenichi Tajima , Kenji Kawakami , Akihito Hirai , Masanobu Hiramine
发明人： Kenichi Tajima , Kenji Kawakami , Akihito Hirai , Masanobu Hiramine
IPC分类号： H04L25/49
CPC分类号： H04L25/4902 , H03M5/12
摘要： A signal transmission system has a modulation signal converter 1 that generates a modulation signal using a Manchester code with a duty ratio of 50% in accordance with transmission data; a clock generator 6 that generates a clock with the amount of delay with respect to the rising or falling edge of the modulation signal; and a data detector 5 that generates received data by sampling the modulation signal in synchronization with the clock. Since the modulation signal converter 1 generates the modulation signal by combining the Manchester code with the duty ratio of 50%, its duty ratio is always 50% independently of the transmission data, thereby preventing the DC offset of the modulation signal on the receiving side. Accordingly, it offers an advantage of achieving good communication quality with a simple circuit configuration without producing the DC offset in the modulation signal on the receiving side.
摘要翻译：信号传输系统具有调制信号转换器1，其根据传输数据使用占空比为50％的曼彻斯特码产生调制信号; 时钟发生器6，生成相对于调制信号的上升沿或下降沿的延迟量的时钟; 以及数据检测器5，其通过与时钟同步地对调制信号进行采样来生成接收数据。由于调制信号转换器1通过将曼彻斯特码与占空比为50％组合来产生调制信号，所以与发送数据无关地占空比始终为50％，从而防止了接收侧的调制信号的直流偏移。因此，它提供了通过简单的电路配置实现良好的通信质量的优点，而不会在接收侧的调制信号中产生DC偏移。

8. 发明申请

US20070247244A1 Voltage-Controlled Oscillator 有权
标题翻译：电压控制振荡器
公开(公告)号：US20070247244A1
公开(公告)日：2007-10-25
申请号：US11629531
申请日：2005-03-07
申请人： Masaomi Tsuru , Kenji Kawakami , Kenichi Tajima , Moriyasu Miyazaki , Kazuhiro Miyamoto , Masafumi Nakane
发明人： Masaomi Tsuru , Kenji Kawakami , Kenichi Tajima , Moriyasu Miyazaki , Kazuhiro Miyamoto , Masafumi Nakane
IPC分类号： H03B5/12 , H03B5/18
CPC分类号： H03H11/44 , H03B5/1203 , H03B5/1228 , H03B5/1231 , H03B5/1243 , H03B5/1293 , H03B2200/0042 , H03H11/28 , H03H11/481
摘要： A voltage-controlled oscillator has a tuned circuit for controlling the oscillation frequency. The tuned circuit has a variable-capacitance element whose capacitance varies in response to a control voltage and a negative capacitance circuit whose impedance frequency characteristics have opposite characteristics to those of a normal capacitance, and which is connected to the variable-capacitance element. The configuration enables increasing the variation ratio corresponding to the control voltage of the combined capacitance composed of the variable-capacitance element and negative capacitance circuit, thereby broadening the oscillation frequency band.
摘要翻译：压控振荡器具有用于控制振荡频率的调谐电路。调谐电路具有可变电容元件，其电容响应于阻抗频率特性与正常电容具有相反特性的控制电压和负电容电路而变化，并且连接到可变电容元件。该配置能够增加与由可变电容元件和负电容电路组成的组合电容的控制电压相对应的变化率，从而使振荡频带变宽。

9. 发明申请

US20070159901A1 Semiconductor Integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US20070159901A1
公开(公告)日：2007-07-12
申请号：US11708348
申请日：2007-02-21
申请人： Tadahiro Obara , Masatoshi Hasegawa , Yousuke Tanaka , Tomofumi Hokari , Kenichi Tajima
发明人： Tadahiro Obara , Masatoshi Hasegawa , Yousuke Tanaka , Tomofumi Hokari , Kenichi Tajima
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C2207/005 , H01L27/105 , H01L27/10897
摘要： A DRAM whose operation is sped up and power consumption is reduced is provided. A pair of precharge MOSFETs for supplying a precharge voltage to a pair of input/output nodes of a CMOS sense amplifier is provided; the pair of input/output nodes are connected to a complementary bit-line pair via a selection switch MOSFET; a first equalize MOSFET is provided between the complementary bit-line pair for equalizing them; a memory cell is provided between one of the complementary bit-line pair and a word line intersecting with it; gate insulators of the selection switch MOSFETs and first equalize MOSFET are formed by first film thickness; a gate insulator of the precharge MOSFET is formed by second film thickness thinner than the first film thickness; a precharge signal corresponding to a power supply voltage is supplied to the precharge MOSFET; and an equalize signal and a selection signal corresponding to a boost voltage are supplied to the first equalize MOSFET and the selection switch MOSFET, respectively.
摘要翻译：提供了其操作加快并且功耗降低的DRAM。提供一对用于向CMOS读出放大器的一对输入/输出节点提供预充电电压的预充电MOSFET; 一对输入/输出节点经由选择开关MOSFET连接到互补位线对; 在互补位线对之间提供第一均衡MOSFET以使它们均衡; 在互补位线对之一和与其相交的字线之间提供存储单元; 选择开关MOSFET和第一均衡MOSFET的栅极绝缘体由第一膜厚度形成; 预充电MOSFET的栅极绝缘体由比第一膜厚度薄的第二膜厚形成; 对应于电源电压的预充电信号被提供给预充电MOSFET; 并且将均衡信号和对应于升压电压的选择信号分别提供给第一均衡MOSFET和选择开关MOSFET。

10. 发明授权

US09385900B2 Signal transmission system 有权
标题翻译：信号传输系统
公开(公告)号：US09385900B2
公开(公告)日：2016-07-05
申请号：US14379078
申请日：2013-03-19
申请人： Kenichi Tajima , Kenji Kawakami , Akihito Hirai , Masanobu Hiramine
发明人： Kenichi Tajima , Kenji Kawakami , Akihito Hirai , Masanobu Hiramine
IPC分类号： H03K7/04 , H04L25/49 , H03M5/12
CPC分类号： H04L25/4902 , H03M5/12
摘要： A signal transmission system has a modulation signal converter 1 that generates a modulation signal using a Manchester code with a duty ratio of 50% in accordance with transmission data; a clock generator 6 that generates a clock with the amount of delay with respect to the rising or falling edge of the modulation signal; and a data detector 5 that generates received data by sampling the modulation signal in synchronization with the clock. Since the modulation signal converter 1 generates the modulation signal by combining the Manchester code with the duty ratio of 50%, its duty ratio is always 50% independently of the transmission data, thereby preventing the DC offset of the modulation signal on the receiving side. Accordingly, it offers an advantage of achieving good communication quality with a simple circuit configuration without producing the DC offset in the modulation signal on the receiving side.
摘要翻译：信号传输系统具有调制信号转换器1，其根据传输数据使用占空比为50％的曼彻斯特码产生调制信号; 时钟发生器6，其产生相对于调制信号的上升沿或下降沿的延迟量的时钟; 以及数据检测器5，其通过与时钟同步地对调制信号进行采样来生成接收数据。由于调制信号转换器1通过将曼彻斯特码与占空比为50％组合来产生调制信号，所以与发送数据无关地占空比始终为50％，从而防止了接收侧的调制信号的直流偏移。因此，它提供了通过简单的电路配置实现良好的通信质量的优点，而不会在接收侧的调制信号中产生DC偏移。

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