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    • 5. 发明申请
    • RANDOM ACCESS METHOD, RADIO COMMUNICATION TERMINAL DEVICE, RECEIVING METHOD, AND BASE STATION APPARATUS
    • 随机访问方法,无线电通信终端设备,接收方法和基站设备
    • US20110243109A1
    • 2011-10-06
    • US13158014
    • 2011-06-10
    • Jun CHENGAkihiko NISHIOKenichi MIYOSHI
    • Jun CHENGAkihiko NISHIOKenichi MIYOSHI
    • H04W72/04
    • H04W72/0413H04W36/16H04W72/04H04W72/0446H04W72/087H04W72/10H04W74/004H04W74/0833H04W88/08
    • There are disclosed a random access method for establishing an individual channel between a radio communication terminal device and a base station device in a short time and a radio communication terminal device executing the random access method. In this device, in step ST320, a RACH sub-channel allocation unit (211) allocates a transmission packet inputted from a replication unit (202) to an arbitrary sub-carrier at the RACH arbitrary time slot at random. In step ST330, an allocation unit (210) judges whether an overlap is generated in the allocation result obtained by the RACH sub-channel allocation unit (211). When the allocation unit (210) judges that an overlap is generated in the allocation result, the allocation unit (210) causes one of the RACH sub-channel allocation units (211) which has caused the overlap to again perform allocation of step ST320. On the other hand, when judgment is made that no overlap is generated in the allocation result, step ST340 is executed.
    • 公开了一种用于在短时间内在无线电通信终端设备和基站设备之间建立单独信道的随机接入方法和执行随机接入方法的无线电通信终端设备。 在该装置中,在步骤ST320中,RACH子信道分配单元(211)随机地将从复制单元(202)输入的发送分组分配给RACH任意时隙的任意子载波。 在步骤ST330中,分配单元(210)判断在由RACH子信道分配单元(211)获得的分配结果中是否生成了重叠。 当分配单元(210)判定在分配结果中产生重叠时,分配单元(210)使引起重叠的RACH子信道分配单元(211)中的一个再次执行步骤ST320的分配。 另一方面,当判断在分配结果中没有产生重叠时,执行步骤ST340。
    • 8. 发明申请
    • BASE STATION APPARATUS PROVIDING RESOURCE BLOCK ALLOCATION AND METHOD THEREFOR
    • 基站提供资源块分配及其方法
    • US20110211545A1
    • 2011-09-01
    • US13104336
    • 2011-05-10
    • Akihiko NISHIOChristian WENGERTERHidetoshi SUZUKIKatsuhiko HIRAMATSU
    • Akihiko NISHIOChristian WENGERTERHidetoshi SUZUKIKatsuhiko HIRAMATSU
    • H04W72/04
    • H04W72/0453H04L5/0007H04L5/001H04L5/0042H04L5/0053H04W72/00H04W72/04H04W72/042H04W72/044
    • It is an object to provide a wireless communication base station device that can prevent the decline of a system throughput due to the degradation of a utilization efficiency of a communication resource of a channel for carrying out a frequency diversity transmission when a frequency scheduling transmission and a frequency diversity transmission are concurrently carried out in multiple carrier communication. In the wireless communication base station device, a modulation unit (12) carries out modulation processing for Dch data after coding to generate a Dch data symbol. A modulation unit (22) carries out modulation processing for Lch data after coding to generate an Lch data symbol. An allocation unit (103) allocates the Dch data symbol and Lch data symbol to each sub-carrier composing an OFDM symbol and outputs the allocated sub-carrier to a multiplex unit (104). In this case, the allocation unit (103) allocates the Dch data symbol to a plurality of resource blocks where one Dch is arranged at an interval equal to integral multiples of the number of resource blocks composing a resource block group.
    • 本发明的目的是提供一种无线通信基站装置,其能够防止由于在频率调度发送时的用于进行频率分集发送的信道的通信资源的利用效率的劣化而导致的系统吞吐量的下降 频率分集传输在多载波通信中同时进行。 在无线通信基站装置中,调制部(12)对编码后的Dch数据进行调制处理,生成Dch数据符号。 调制单元(22)对编码后的Lch数据进行调制处理,生成Lch数据符号。 分配单元(103)将Dch数据符号和Lch数据符号分配给构成OFDM符号的每个子载波,并将所分配的子载波输出到多路复用单元(104)。 在这种情况下,分配单元(103)将Dch数据符号分配给多个资源块,其中一个Dch以等于构成资源块组的资源块的数量的整数倍的间隔排列。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体器件及其制造方法
    • US20080251837A1
    • 2008-10-16
    • US12054800
    • 2008-03-25
    • Yoshiaki KATOYoshiharu ANDAAkihiko NISHIO
    • Yoshiaki KATOYoshiharu ANDAAkihiko NISHIO
    • H01L21/04H01L49/00
    • H01L29/7783H01L21/8252H01L27/0605H01L27/0883
    • A semiconductor device which includes both an E-FET and a D-FET and can facilitate control of the Vth in an E-FET and suppress a decrease in the Vf, and a manufacturing method of the same are provided. A semiconductor device which includes both an E-FET and a D-FET on the same semiconductor substrate includes: a first threshold adjustment layer for adjusting threshold of the E-FET; a first etching stopper layer formed on the first threshold adjustment layer; the second threshold adjustment layer formed on the first etching stopper layer for adjusting threshold of the D-FET; a second etching stopper layer formed on the second threshold adjustment layer; a first gate electrode penetrating through the first etching stopper layer, the second threshold adjustment layer, and the second etching stopper layer, which is in contact with the first threshold adjustment layer; and the second gate electrode penetrating through the second etching stopper layer, which is in contact with the second threshold adjustment layer.
    • 包括E-FET和D-FET两者的半导体器件,并且可以有助于控制E-FET中的Vth,并抑制Vf的降低,并且提供其制造方法。 在同一半导体衬底上包括E-FET和D-FET的半导体器件包括:用于调节E-FET的阈值的第一阈值调整层; 形成在第一阈值调整层上的第一蚀刻停止层; 所述第二阈值调整层形成在所述第一蚀刻停止层上,用于调节所述D-FET的阈值; 形成在所述第二阈值调整层上的第二蚀刻停止层; 穿过与第一阈值调整层接触的第一蚀刻停止层,第二阈值调节层和第二蚀刻阻挡层的第一栅电极; 并且所述第二栅电极贯穿与所述第二阈值调整层接触的所述第二蚀刻停止层。