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    • 1. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体器件及其制造方法
    • US20080251837A1
    • 2008-10-16
    • US12054800
    • 2008-03-25
    • Yoshiaki KATOYoshiharu ANDAAkihiko NISHIO
    • Yoshiaki KATOYoshiharu ANDAAkihiko NISHIO
    • H01L21/04H01L49/00
    • H01L29/7783H01L21/8252H01L27/0605H01L27/0883
    • A semiconductor device which includes both an E-FET and a D-FET and can facilitate control of the Vth in an E-FET and suppress a decrease in the Vf, and a manufacturing method of the same are provided. A semiconductor device which includes both an E-FET and a D-FET on the same semiconductor substrate includes: a first threshold adjustment layer for adjusting threshold of the E-FET; a first etching stopper layer formed on the first threshold adjustment layer; the second threshold adjustment layer formed on the first etching stopper layer for adjusting threshold of the D-FET; a second etching stopper layer formed on the second threshold adjustment layer; a first gate electrode penetrating through the first etching stopper layer, the second threshold adjustment layer, and the second etching stopper layer, which is in contact with the first threshold adjustment layer; and the second gate electrode penetrating through the second etching stopper layer, which is in contact with the second threshold adjustment layer.
    • 包括E-FET和D-FET两者的半导体器件,并且可以有助于控制E-FET中的Vth,并抑制Vf的降低,并且提供其制造方法。 在同一半导体衬底上包括E-FET和D-FET的半导体器件包括:用于调节E-FET的阈值的第一阈值调整层; 形成在第一阈值调整层上的第一蚀刻停止层; 所述第二阈值调整层形成在所述第一蚀刻停止层上,用于调节所述D-FET的阈值; 形成在所述第二阈值调整层上的第二蚀刻停止层; 穿过与第一阈值调整层接触的第一蚀刻停止层,第二阈值调节层和第二蚀刻阻挡层的第一栅电极; 并且所述第二栅电极贯穿与所述第二阈值调整层接触的所述第二蚀刻停止层。
    • 2. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体器件及其制造方法
    • US20090230482A1
    • 2009-09-17
    • US12404562
    • 2009-03-16
    • Yoshiaki KATOYoshiharu ANDAAkiyoshi TAMURA
    • Yoshiaki KATOYoshiharu ANDAAkiyoshi TAMURA
    • H01L27/088H01L21/28
    • H01L27/0605H01L27/0883H01L29/66462H01L29/7783
    • A semiconductor device in which an E-FET and a D-FET are integrated on the same substrate, wherein an epitaxial layer includes, in the following order from the semiconductor substrate: a first threshold adjustment layer that adjusts a threshold voltage of a gate of the E-FET and a threshold voltage of a gate of the D-FET; a first etching-stopper layer that stops etching performed from an uppermost layer to a layer abutting on the first etching-stopper layer; a second threshold adjustment layer that adjusts the threshold voltage of the gate of the D-FET; and a second etching-stopper layer that stops the etching performed from the uppermost layer to a layer abutting on the second etching-stopper layer, and at least one of the first etching-stopper layer and the second threshold adjustment layer includes an n-type doped region.
    • 一种半导体器件,其中E-FET和D-FET集成在同一衬底上,其中外延层从半导体衬底按以下顺序包括:第一阈值调节层,其调节栅极的阈值电压 E-FET和D-FET的栅极的阈值电压; 第一蚀刻停止层,其停止从最上层到邻接于所述第一蚀刻停止层的层的蚀刻; 调节D-FET的栅极的阈值电压的第二阈值调整层; 以及第二蚀刻停止层,其将从最上层进行的蚀刻停止到与第二蚀刻停止层相邻的层,并且第一蚀刻停止层和第二阈值调整层中的至少一个包括n型 掺杂区域。
    • 3. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    • 半导体器件及其制造方法
    • US20070295991A1
    • 2007-12-27
    • US11757533
    • 2007-06-04
    • Yoshiaki KATOYoshiharu ANDAAkiyoshi TAMURA
    • Yoshiaki KATOYoshiharu ANDAAkiyoshi TAMURA
    • H01L29/812H01L21/338
    • H01L29/8128H01L29/42316H01L29/66863H01L29/778
    • A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
    • 根据本发明的半导体器件包括:半导体衬底; 形成在所述半导体衬底上的沟道层; 在沟道层上形成的施主层; 形成在供体层上的第一肖特基层; 形成在第一肖特基层上的第二肖特基层; 形成在所述第一肖特基层上以与所述第一肖特基层形成肖特基势垒结的第一栅电极; 第一源电极和第一漏电极,其形成为夹着所述第一栅电极并电连接到所述沟道层; 第二栅电极,形成在所述第二肖特基层上,并且由与所述第一栅电极不同的材料制成,以与所述第二肖特基层形成肖特基势垒结; 以及第二源电极和第二漏电极,其形成为夹着所述第二栅极并电连接到所述沟道层。
    • 5. 发明申请
    • SOLID-STATE IMAGING DEVICE, DRIVING METHOD THEREOF, AND CAMERA
    • 固态成像装置,其驱动方法和摄像机
    • US20080018770A1
    • 2008-01-24
    • US11776979
    • 2007-07-12
    • Yoshiaki KATO
    • Yoshiaki KATO
    • H04N3/14
    • H04N9/045H04N5/3458H04N5/3728
    • A solid-state imaging device includes: a plurality of light-receiving elements which are arranged by rows and columns; a plurality of vertical transfer units each of which is arranged for a corresponding column of the light-receiving elements, and vertically transfers a plurality of signal packets and dummy packets, the signal packet including charges read from the light-receiving elements, the dummy packets being packets other than the signal packets, and N columns of the vertical transfer units forming one column group; a plurality of hold units which are arranged for final stages of the vertical transfer units in N columns except M column in the column group, and each of which mixes, holds, and vertically transfers charges of the signal packets and the dummy packet without depending on vertical transfer from upstream of the corresponding vertical transfer unit; a horizontal transfer unit which mixes, holds, and horizontally transfers the charges transferred from the hold units or the vertical transfer units in the M column in the column group; and a driving unit which drives the vertical transfer units, the hold units, and the horizontal transfer unit, wherein the driving unit perform the driving, so that a signal packet and a plurality of dummy packets in an identical column are mixed together into a mixed packet in each of the holding units, charges of the mixed packet are held in the hold unit, the held charges of the mixed packet are vertically transferred to the horizontal transfer unit so that the mixed packet is mixed with a mixed packet of a different hold unit which is vertically transferred from the different hold unit to the horizontal transfer unit.
    • 一种固态成像装置,包括:多个受行列排列的光接收元件; 多个垂直传送单元,每个垂直传送单元被布置成用于相应列的光接收元件,并且垂直地传送多个信号分组和虚拟分组,所述信号分组包括从光接收元件读取的电荷,虚拟分组 作为信号分组以外的分组,构成1列组的垂直传送单元的N列; 多个保持单元,其被配置为垂直传送单元的最后阶段,除了列组中的M列之外,N列除外,并且每个保持单元混合,保持并垂直地传送信号分组和虚拟分组的费用,而不依赖于 从垂直传输单元的上游垂直传输; 水平传送单元,其混合,保持和水平传送从列组中的M列中的保持单元或垂直传送单元传送的电荷; 以及驱动所述垂直传送单元,所述保持单元和所述水平传送单元的驱动单元,其中,所述驱动单元执行所述驱动,使得相同列中的信号分组和多个虚拟分组混合在一起成为混合 每个保持单元中的分组,混合分组的费用被保持在保持单元中,混合分组的保持的电荷被垂直传送到水平传送单元,使得混合分组与不同的保持的混合分组混合 单元,其从不同的保持单元垂直传送到水平传送单元。
    • 8. 发明申请
    • SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE
    • 固态成像装置和驱动固态成像装置的方法
    • US20070236592A1
    • 2007-10-11
    • US11693300
    • 2007-03-29
    • Yoshiaki KATO
    • Yoshiaki KATO
    • H04N5/335
    • H04N9/045H01L27/14603H01L27/14621H01L27/14843H04N5/3595H04N5/37213
    • Vertical transfer portions for transferring signal charges from photoelectric conversion portions in a vertical direction and a horizontal transfer portion for transferring them in a horizontal direction are provided, and each of a plurality of vertical transfer stages constituting the vertical transfer portion is provided with a plurality of phases of transfer electrodes. The transfer electrodes at a vertical last stage include independent transfer electrodes (V3R, V5R) for at least two phases, that are independent of the other vertical transfer stages, have identical configurations repeated in a unit of n columns, and are in common among corresponding columns in a plurality of the units of n columns and independent of the independent transfer electrodes belonging to the other columns in the unit of n columns. A signal transfer stage from which the signal charge is read out and a dummy transfer stage from which the signal charge is not read out are formed alternately, the signal charge at the signal transfer stage and a dummy signal at the following dummy transfer stage are mixed together at the vertical last stage and then transferred to the horizontal transfer portion. In the case where a dummy transfer stage is formed for transfer, it is possible to suppress transfer degradation and mix a dummy signal with a signal charge.
    • 设置用于从垂直方向的光电转换部分传送信号电荷的垂直转印部分和用于在水平方向上转印它们的水平转印部分,并且构成垂直转印部分的多个垂直转印台中的每一个设置有多个 转移电极的相。 垂直最后一级的转移电极包括独立于其他垂直转移级的至少两相的独立转移电极(V 3 R,V 5 R),具有以n列为单位重复的相同配置,并且 在n列的多个单元中的相应列之间是共同的,并且独立于以n列为单位属于其它列的独立传输电极。 将信号电荷读出的信号传送级和未读出信号电荷的虚拟传送级交替地形成,信号传送级的信号电荷和下一个虚拟传输级的虚拟信号混合 一起在垂直的最后阶段,然后转移到水平传送部分。 在形成用于传送的虚拟传送级的情况下,可以抑制传输劣化并将虚拟信号与信号电荷混合。
    • 9. 发明申请
    • SOLID-STATE IMAGING APPARATUS AND METHOD FOR DRIVING THE SAME
    • 固态成像装置及其驱动方法
    • US20070165128A1
    • 2007-07-19
    • US11621276
    • 2007-01-09
    • Yoshiaki KATO
    • Yoshiaki KATO
    • H04N5/335
    • H01L27/14887H01L27/14837H01L27/14843H04N5/3592H04N5/3728
    • To provide a solid-state imaging apparatus which is capable of preventing electric charge from being injected from a semiconductor substrate while electric charge is being accumulated into photodiodes. The solid-state imaging apparatus includes a solid-state imaging device and a driving pulse control unit. The solid-state imaging device includes: a semiconductor substrate, photodiodes which are two-dimensionally formed on the semiconductor substrate, and vertical Charge-coupled devices (CCDs) having at least one arranged read-out gate and non-read-out gate for each of the photodiodes, the read-out gate being for reading out accumulated electric charge from the associated photodiode, and the non-read-out gate being not for reading out accumulated electric charge from the associated photodiode. The driving pulse control unit applies driving pulses sequentially to the respective read-out gates in order to change the read-out gates from stand-by LOW-voltage states to MIDDLE-voltage states, and apply a driving pulse for maintaining a LOW-voltage state of at least one of non-read-out gates adjacent to a last read-out gate in the order of the change among the non-read-out gates, during the change starting with a first read-out gate and ending with the last read-out gate.
    • 提供一种固态成像装置,其能够在电荷积聚到光电二极管中时防止从半导体衬底注入电荷。 固态成像装置包括固态成像装置和驱动脉冲控制单元。 固态成像装置包括:半导体衬底,二维地形成在半导体衬底上的光电二极管以及具有至少一个布置的读出栅极和非读出栅极的垂直电荷耦合器件(CCD) 每个光电二极管,读出门用于从相关联的光电二极管读出累积的电荷,并且非读出门不用于从相关联的光电二极管读出累积的电荷。 驱动脉冲控制单元将驱动脉冲顺序地施加到各个读出门,以便将读出门从待机低电压状态改变为中等电压状态,并施加用于维持低电压的驱动脉冲 在从第一读出门开始的改变期间,以非读出门的改变的顺序,与最后的读出门相邻的非读出门中的至少一个的状态, 最后一个读出门。
    • 10. 发明申请
    • SOLID STATE IMAGING DEVICE
    • 固态成像装置
    • US20110316109A1
    • 2011-12-29
    • US13226783
    • 2011-09-07
    • Takuya ASANOYoshiaki KATOTakuya NOHARASei SUZUKI
    • Takuya ASANOYoshiaki KATOTakuya NOHARASei SUZUKI
    • H01L31/0216
    • H01L27/14843H01L27/14818
    • A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.
    • 固态成像装置包括光电转换单元,包括垂直转印电极的垂直转印单元,水平转印单元,包括分布转印电极的分布转印单元,以及设置在垂直转印上的第一遮光层和第二遮光层 单位和配送单位。 第一遮光层和第二遮光层是导电的。 第一遮光层设置在与设置有第二遮光层的层不同的层中。 第一遮光层中的至少一个用作电连接到包括在同一行中的垂直传输电极的互连,并且分配传送单元上的第一遮光层中的至少一个用作互连电连接 分配转移电极。 第一遮光层设置成不与水平传送单元重叠。