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    • 9. 发明授权
    • Semiconductive light-emitting device having strained MQW with AlGaInAs
barriers
    • 具有应变的具有AlGaInAs屏障的MQW的半导体发光器件
    • US5920079A
    • 1999-07-06
    • US572101
    • 1995-12-14
    • Hitoshi ShimizuKazuaki NishikataToru FukushimaMichinori Irikawa
    • Hitoshi ShimizuKazuaki NishikataToru FukushimaMichinori Irikawa
    • H01L33/06H01L33/14H01L33/30H01S5/00H01S5/34H01S5/343H01L29/06H01L31/0328H01L33/00
    • H01L33/06B82Y20/00H01S5/34H01S5/34313H01S5/3403H01S5/3406H01S5/3407H01S5/34306
    • The present invention provides a semiconductive light-emitting device involving a light-emitting layer of the multilayer strained quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness. Likewise, the invented scheme produces a light-emitting device involving a light-emitting layer of the multilayer strain compensation quantum well structure that has a plurality of quantum well layers and a plurality of barrier layers, where each of said quantum well layers is constituted of a semiconductive crystal subjected to intraplanar compressive strain; each of the barrier layers is constituted of semiconductor crystal of AlInAs, AlGaInAs or AlGaInAsP. For high differential gain, each quantum well layer is 6nm thick or less, and the summed quantum well layers measure 13 to 1000 nm in thickness.
    • 本发明提供一种半导体发光装置,其包括具有多个量子阱层和多个阻挡层的多层应变量子阱结构的发光层,其中每个所述量子阱层由半导体 晶体受到内面压缩应变; 每个阻挡层由AlInAs,AlGaInAs或AlGaInAsP的半导体晶体构成。 对于高差分增益,每个量子阱层的厚度为6nm或以下,相加的量子阱层厚度为13〜1000nm。 同样地,本发明的方案产生了包括多层应变补偿量子阱结构的发光层的发光器件,其具有多个量子阱层和多个势垒层,其中每个所述量子阱层由 受到内面压缩应变的半导体晶体; 每个阻挡层由AlInAs,AlGaInAs或AlGaInAsP的半导体晶体构成。 对于高差分增益,每个量子阱层的厚度为6nm或以下,相加的量子阱层厚度为13〜1000nm。