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    • 6. 发明申请
    • Wafer dividing method
    • 晶圆分割法
    • US20060148211A1
    • 2006-07-06
    • US11324323
    • 2006-01-04
    • Kenichi IwasakiSatoshi GendaToshio Tsuchiya
    • Kenichi IwasakiSatoshi GendaToshio Tsuchiya
    • H01L21/78
    • H01L21/67092B23K26/40B23K2103/50H01L21/78
    • A wafer dividing method for cutting a wafer having devices which are composed of a laminate laminated on the front surface of a substrate with a cutting blade along a plurality of streets for sectioning the devices, comprising the steps of a groove forming step for forming two grooves deeper than the thickness of the laminate at an interval larger than the thickness of the cutting blade by applying a laser beam along the streets formed on the wafer; an alignment step for picking up an image of the two grooves formed in the streets of the wafer by the above groove forming step and positioning the cutting blade at the center position between the two grooves based on the image; and a cutting step for moving the cutting blade and the wafer relative to each other while the cutting blade is rotated to cut the wafer along the streets having the two grooves formed therein, after the above alignment step.
    • 一种晶片分割方法,其特征在于,具有如下步骤:切割晶片,所述晶片具有由层叠在基板的前表面上的层叠的多个装置构成的切片, 比通过沿着形成在晶片上的街道施加激光束以大于切割刀片的厚度的间隔比层压体的厚度更深; 对准步骤,用于通过上述槽形成步骤拾取形成在晶片的街道中的两个凹槽的图像,并且基于图像将切割刀片定位在两个凹槽之间的中心位置; 以及在上述对准步骤之后,在切割刀片旋转以沿着形成有两个凹槽的街道切割晶片的同时相对于彼此移动切割刀片和晶片的切割步骤。