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    • 1. 发明授权
    • Semiconductor integrated circuit and method for controlling semiconductor integrated circuit
    • 半导体集成电路及半导体集成电路控制方法
    • US08201037B2
    • 2012-06-12
    • US12563515
    • 2009-09-21
    • Kenichi AnzouChikako Tokunaga
    • Kenichi AnzouChikako Tokunaga
    • G01R31/28G06F11/00
    • G06F11/27G11C29/14G11C29/38G11C29/44G11C29/4401G11C29/72G11C2029/0401G11C2029/1208G11C2029/3602
    • A semiconductor integrated circuit includes memories, a BIST circuit, and an analyzer. The BIST circuit includes a test controller performing the test and generating a memory selection signal selecting a memory to be tested, an address generator generating write and read addresses, a data generator generating write data and an expected output value, and a control signal generator generating a control signal. The analyzer includes a memory output selector selecting output data, a bit comparator comparing the output data with the expected output value, an error detection unit determining whether there is an error in the memory, a plurality of pass/fail flag registers capable of storing a pass/fail flag, a repair analyzer analyzing a memory error and generating a repair analysis result, a plurality of repair analysis result registers capable of storing the repair analysis result, and an output unit outputting the pass/fail flag and the repair analysis result.
    • 半导体集成电路包括存储器,BIST电路和分析器。 BIST电路包括执行测试并产生选择要测试的存储器的存储器选择信号的测试控制器,产生写入和读取地址的地址生成器,产生写入数据和预期输出值的数据发生器以及产生 一个控制信号。 分析器包括选择输出数据的存储器输出选择器,将输出数据与预期输出值进行比较的位比较器,确定存储器中是否存在错误的错误检测单元,能够存储 通过/失败标志,分析存储器错误并产生修复分析结果的修复分析器,能够存储修复分析结果的多个修复分析结果寄存器,以及输出通过/失败标志和修复分析结果的输出单元。
    • 2. 发明授权
    • On-chip failure analysis circuit and on-chip failure analysis method
    • 片上故障分析电路和片上故障分析方法
    • US08037376B2
    • 2011-10-11
    • US12345298
    • 2008-12-29
    • Kenichi AnzouChikako Tokunaga
    • Kenichi AnzouChikako Tokunaga
    • G11C29/00
    • G11C29/44G11C29/4401G11C29/72
    • An on-chip failure analysis circuit for analyzing a memory has a memory in which data is stored, a built-in self test unit which tests the memory, a failure detection unit which detects a failure of the output of the memory, a fail data storage unit in which fail data is stored, the fail data including a location of the failure, a failure analysis unit which performs failure analysis using the number of failures detected by the failure detection unit and the location of the failure, the failure analysis unit writing fail data including the analysis result in the fail data storage unit, and an analysis result output unit which outputs the analysis result of the failure analysis unit.
    • 用于分析存储器的片上故障分析电路具有存储数据的存储器,测试存储器的内置自检单元,检测存储器输出故障的故障检测单元,故障数据 存储故障数据的存储单元,包括故障位置的故障数据,使用故障检测单元检测到的故障次数和故障位置进行故障分析的故障分析单元,故障分析单元写入 包括故障数据存储单元中的分析结果的故障数据以及输出故障分析单元的分析结果的分析结果输出单元。
    • 3. 发明授权
    • Semiconductor integrated circuit having built-n self test circuit of logic circuit and embedded device, and design apparatus thereof
    • 具有逻辑电路和嵌入式装置的内置自检电路的半导体集成电路及其设计装置
    • US07734975B2
    • 2010-06-08
    • US11683759
    • 2007-03-08
    • Kenichi AnzouChikako TokunagaTetsu Hasegawa
    • Kenichi AnzouChikako TokunagaTetsu Hasegawa
    • G01R31/28
    • G01R31/31721G01R31/318575
    • A semiconductor integrated circuit contains a logic circuit which operates upon receiving a clock; a logic built-in self test circuit which executes a built-in self test of said logic circuit, said logic built-in self test circuit having a pattern generator which generates a pattern to be input to said logic circuit, a pattern compactor which receives data output from said logic circuit that has received the pattern, compacts the data, and outputs a result, and a logic built-in self test control unit which controls operations of said pattern generator and said pattern compactor and controls an operation of causing a scan path in said logic circuit to shift upon receiving the pattern; a device circuit which operates upon receiving the clock; and a device circuit built-in self test circuit which executes a built-in self test of said device circuit.
    • 半导体集成电路包含在接收时钟时工作的逻辑电路; 逻辑内置自检电路,其执行所述逻辑电路的内置自检,所述逻辑内置自检电路具有产生要输入到所述逻辑电路的模式的模式发生器,模式压缩器,其接收 从已经接收到图案的所述逻辑电路输出的数据,压缩数据并输出结果;以及逻辑内置自检控制单元,其控制所述图案发生器和所述图案压实机的操作,并控制进行扫描的操作 所述逻辑电路中的路径在接收到所述图案时移位; 接收时钟时操作的设备电路; 以及内置自检电路的器件电路,其执行所述器件电路的内置自检。
    • 4. 发明授权
    • Semiconductor integrated circuit having a (BIST) built-in self test circuit for fault diagnosing operation of a memory
    • 具有用于存储器的故障诊断操作的(BIST)内置自检电路的半导体集成电路
    • US07653854B2
    • 2010-01-26
    • US11774075
    • 2007-07-06
    • Kenichi AnzouChikako Tokunaga
    • Kenichi AnzouChikako Tokunaga
    • G01R31/28
    • G11C29/16G11C29/38G11C29/44G11C2029/0405G11C2029/2602G11C2029/3602
    • According to the present invention, there is provided a semiconductor integrated circuit having: a BIST including a data generator, an address generator, a control signal generator, a result analyzer, a BIST controller, and a diagnostic data storage circuit including a first capture register which captures and outputs, in accordance with a first clock, a latest address signal and the BIST state signal output from said BIST controller while the flag signal is in as state that no fault is detected, and maintains outputs when the flag signal is in a state that a fault is detected. The semiconductor integrated circuit can further include a memory collar having a memory cell, a second capture register, a comparator, and a flag register. The semiconductor integrated circuit can perform a fault diagnosing operation of a memory by using a comparator type BIST circuit.
    • 根据本发明,提供了一种半导体集成电路,其具有:包括数据发生器,地址发生器,控制信号发生器,结果分析器,BIST控制器和包括第一捕获寄存器的诊断数据存储电路的BIST 其在标志信号处于作为没有检测到故障的状态时,根据第一时钟捕获并输出最新地址信号和从所述BIST控制器输出的BIST状态信号,并且当标志信号处于 表示检测到故障。 半导体集成电路还可以包括具有存储单元,第二捕获寄存器,比较器和标志寄存器的存储器环。 半导体集成电路可以通过使用比较器型BIST电路来执行存储器的故障诊断操作。
    • 6. 发明授权
    • Built-in self test circuit and designing apparatus
    • 内置自检电路及设计仪器
    • US08671317B2
    • 2014-03-11
    • US13231073
    • 2011-09-13
    • Kenichi AnzouChikako Tokunaga
    • Kenichi AnzouChikako Tokunaga
    • G11C29/00
    • G11C29/18G11C29/10G11C2029/0405G11C2029/3602
    • According to one embodiment, a semiconductor integrated circuit includes at least one memory and at least one built-in self test (BIST) circuit. In the memory, data can be stored. The BIST circuit tests the memory and includes an address generator. The address generator operates in one of a first operating mode and a second operating mode. In the first operating mode, address signals corresponding to all addresses of the memory are generated. In the second operating mode, the address signals are generated such that each bit of an address input of the memory can be one signal state of both 0 and 1 and such that different bits constitute a set of pieces of data in which the bits choose different signal states at least once.
    • 根据一个实施例,半导体集成电路包括至少一个存储器和至少一个内置自测试(BIST)电路。 在内存中,可以存储数据。 BIST电路测试存储器并包括地址发生器。 地址发生器以第一操作模式和第二操作模式中的一种操作。 在第一操作模式中,生成与存储器的所有地址对应的地址信号。 在第二操作模式中,产生地址信号,使得存储器输入的地址的每个位都可以是0和1的一个信号状态,并且使得不同的位构成一组数据,其中位选择不同 信号状态至少一次。
    • 8. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR CONTROLLING SEMICONDUCTOR INTEGRATED CIRCUIT
    • 半导体集成电路和控制半导体集成电路的方法
    • US20100125766A1
    • 2010-05-20
    • US12563515
    • 2009-09-21
    • Kenichi AnzouChikako Tokunaga
    • Kenichi AnzouChikako Tokunaga
    • G11C29/04G06F11/22
    • G06F11/27G11C29/14G11C29/38G11C29/44G11C29/4401G11C29/72G11C2029/0401G11C2029/1208G11C2029/3602
    • A semiconductor integrated circuit includes memories, a BIST circuit, and an analyzer. The BIST circuit includes a test controller performing the test and generating a memory selection signal selecting a memory to be tested, an address generator generating write and read addresses, a data generator generating write data and an expected output value, and a control signal generator generating a control signal. The analyzer includes a memory output selector selecting output data, a bit comparator comparing the output data with the expected output value, an error detection unit determining whether there is an error in the memory, a plurality of pass/fail flag registers capable of storing a pass/fail flag, a repair analyzer analyzing a memory error and generating a repair analysis result, a plurality of repair analysis result registers capable of storing the repair analysis result, and an output unit outputting the pass/fail flag and the repair analysis result.
    • 半导体集成电路包括存储器,BIST电路和分析器。 BIST电路包括执行测试并产生选择要测试的存储器的存储器选择信号的测试控制器,产生写入和读取地址的地址生成器,产生写入数据和预期输出值的数据发生器以及产生 一个控制信号。 分析器包括选择输出数据的存储器输出选择器,将输出数据与预期输出值进行比较的位比较器,确定存储器中是否存在错误的错误检测单元,能够存储 通过/失败标志,分析存储器错误并产生修复分析结果的修复分析器,能够存储修复分析结果的多个修复分析结果寄存器,以及输出通过/失败标志和修复分析结果的输出单元。