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1. 发明授权

US06934209B2 Temperature compensated T-RAM memory device and method 有权
标题翻译：温度补偿T-RAM存储器件及方法
公开(公告)号：US06934209B2
公开(公告)日：2005-08-23
申请号：US10404859
申请日：2003-03-31
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C7/04 , G11C11/00 , G11C11/36 , G11C11/39 , G11C17/06
CPC分类号： G11C11/39
摘要： A T-RAM memory cell includes a temperature compensation device to adjust the gate-to-source voltage of an access transistor for the memory cell as a function of temperature so that the sub-threshold current of the transistor is insensitive to temperature variations. As a result, the sub-threshold current can be maintained slightly above the holding current of a thyristor used in the memory cell despite substantial temperature variations. In one embodiment, the temperature compensation device includes a current source directing a fixed current through a diode-connected transistor of the type used as the memory cell access transistor. Temperature induced changes in a reference voltage generated at the junction between the current source and the transistor therefore match the temperature induced changed in the sub-threshold current of the access transistor. As a result, the sub-threshold current of the access transistor can be made insensitive to temperature variations by applying the reference voltage to the gate or source of the access transistor.
摘要翻译： T-RAM存储单元包括温度补偿装置，用于调节作为温度的函数的用于存储器单元的存取晶体管的栅极 - 源极电压，使得晶体管的次级阈值电流对温度变化不敏感。因此，尽管存在相当大的温度变化，但是亚阈值电流可以保持略高于在存储器单元中使用的晶闸管的保持电流。在一个实施例中，温度补偿装置包括电流源，其引导固定电流通过用作存储单元存取晶体管的类型的二极管连接的晶体管。因此，在电流源和晶体管之间的结处产生的参考电压的温度感应变化使匹配在存取晶体管的次级阈值电流中变化的温度变化。结果，通过将参考电压施加到存取晶体管的栅极或源极，可以使存取晶体管的亚阈值电流对温度变化不敏感。

2. 发明授权

US06717867B2 SRAM power-up system and method 失效
公开(公告)号：US06717867B2
公开(公告)日：2004-04-06
申请号：US10349462
申请日：2003-01-21
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C700
CPC分类号： G11C11/417 , G11C5/14
摘要： A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

3. 发明授权

US06707707B2 SRAM power-up system and method 失效
标题翻译： SRAM上电系统和方法
公开(公告)号：US06707707B2
公开(公告)日：2004-03-16
申请号：US10032312
申请日：2001-12-21
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C1100
CPC分类号： G11C11/417 , G11C5/14
摘要： A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.
摘要翻译：用于SRAM的上电电路，特别是具有PMOS存取晶体管的无负载4-T SRAM单元。在SRAM的上电期间，上电电路禁止在SRAM单元阵列中的数字线的电流路径。结果是，在上电期间，如果在上电期间阵列中的字线上的电压导致SRAM单元的存取晶体管变得导通，则SRAM单元在加电期间不能从数字线引出电力。

4. 发明授权

US06198670B1 Bias generator for a four transistor load less memory cell 失效
标题翻译：偏置发生器用于四个晶体管负载较少的存储单元
公开(公告)号：US06198670B1
公开(公告)日：2001-03-06
申请号：US09338393
申请日：1999-06-22
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C1604
CPC分类号： G11C11/418
摘要： The present invention is a current-mirror-based bias generator for a load less four transistor SRAM as well as associated methods of controlling or modifying the current conducted by the access transistors of such an SRAM. The present invention may be thought of as an adjustable temperature coefficient, bias generator that references, via a current mirror, a reference bank of SRAM cells. The bank of reference cells provides an indication of the necessary conduction characteristics (e.g., gate to source voltage) of the access transistors under various conditions. By applying a bias voltage to the word line the desired current is sourced from the digit line. The bank of reference SRAM cells inherently compensates for process variations. The adjustable temperature coefficient bias generator allows the current sourced by the digit lines to vary greatly as a result of temperature variations. Thus, the present invention compensates for both process variations and temperature variations.
摘要翻译：本发明是一种用于负载少于四个晶体管SRAM的基于电流镜的偏置发生器，以及控制或修改由这种SRAM的存取晶体管传导的电流的相关方法。本发明可以被认为是可调温度系数，偏置发生器，其通过电流镜参考SRAM单元的参考组。参考单元组在各种条件下提供存取晶体管所必需的导通特性（例如，栅 - 源电压）的指示。通过对字线施加偏置电压，所需电流来自数字线。参考库SRAM单元固有地补偿了工艺变化。可调节温度系数偏置发生器允许由数字线引起的电流由于温度变化而极大地变化。因此，本发明补偿了工艺变化和温度变化。

5. 发明授权

US06829156B2 SRAM power-up system and method 失效
公开(公告)号：US06829156B2
公开(公告)日：2004-12-07
申请号：US10348623
申请日：2003-01-21
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C700
CPC分类号： G11C11/417 , G11C5/14
摘要： A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

6. 发明授权

US06781907B2 Temperature compensated T-RAM memory device and method 有权
标题翻译：温度补偿T-RAM存储器件及方法
公开(公告)号：US06781907B2
公开(公告)日：2004-08-24
申请号：US10165665
申请日：2002-06-06
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C704
CPC分类号： G11C11/39
摘要： A T-RAM memory cell includes a temperature compensation device to adjust the gate-to-source voltage of an access transistor for the memory cell as a function of temperature so that the sub-threshold current of the transistor is insensitive to temperature variations. As a result, the sub-threshold current can be maintained slightly above the holding current of a thyristor used in the memory cell despite substantial temperature variations. In one embodiment, the temperature compensation device includes a current source directing a fixed current through a diode-connected transistor of the type used as the memory cell access transistor. Temperature induced changes in a reference voltage generated at the junction between the current source and the transistor therefore match the temperature induced changed in the sub-threshold current of the access transistor. As a result, the sub-threshold current of the access transistor can be made insensitive to temperature variations by applying the reference voltage to the gate or source of the access transistor.
摘要翻译： T-RAM存储单元包括温度补偿装置，用于调节作为温度的函数的用于存储器单元的存取晶体管的栅极 - 源极电压，使得晶体管的次级阈值电流对温度变化不敏感。因此，尽管存在相当大的温度变化，但是亚阈值电流可以保持略高于在存储器单元中使用的晶闸管的保持电流。在一个实施例中，温度补偿装置包括电流源，其引导固定电流通过用作存储单元存取晶体管的类型的二极管连接的晶体管。因此，在电流源和晶体管之间的结处产生的参考电压的温度感应变化使匹配在存取晶体管的次级阈值电流中变化的温度变化。结果，通过将参考电压施加到存取晶体管的栅极或源极，可以使存取晶体管的亚阈值电流对温度变化不敏感。

7. 发明授权

US06731546B2 SRAM power-up system and method 失效
公开(公告)号：US06731546B2
公开(公告)日：2004-05-04
申请号：US10348787
申请日：2003-01-21
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C700
CPC分类号： G11C11/417 , G11C5/14
摘要： A power-up circuit for an SRAM, particularly a loadless 4-T SRAM cell having PMOS access transistors. The power-up circuit disables a current path to the digit lines in an array of SRAM cells during power-up of the SRAM. As a result, the SRAM cells cannot draw power from the digit lines during power-up if voltages on word lines in the array during power-up cause access transistors for the SRAM cells to become conductive.

8. 发明授权

US06388933B2 Method of controlling the conduction of the access transistors of a load less, four transistor memory cell 失效
标题翻译：控制负载较小的四晶体管存储单元的存取晶体管的导通的方法
公开(公告)号：US06388933B2
公开(公告)日：2002-05-14
申请号：US09732535
申请日：2000-12-08
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C704
CPC分类号： G11C11/418
摘要： The present invention is a current-mirror-based bias generator for a load less four transistor SRAM as well as associated methods of controlling or modifying the current conducted by the access transistors of such an SRAM. The present invention may be thought of as an adjustable temperature coefficient, bias generator that references, via a current mirror, a reference bank of SRAM cells. The bank of reference cells provides an indication of the necessary conduction characteristics (e.g., gate to source voltage) of the access transistors under various conditions. By applying a bias voltage to the word line the desired current is sourced from the digit line. The bank of reference SRAM cells inherently compensates for process variations. The adjustable temperature coefficient bias generator allows the current sourced by the digit lines to vary greatly as a result of temperature variations. Thus, the present invention compensates for both process variations and temperature variations.
摘要翻译：本发明是一种用于负载少于四个晶体管SRAM的基于电流镜的偏置发生器，以及控制或修改由这种SRAM的存取晶体管传导的电流的相关方法。本发明可以被认为是可调温度系数，偏置发生器，其通过电流镜参考SRAM单元的参考组。参考单元组在各种条件下提供存取晶体管所必需的导通特性（例如，栅 - 源电压）的指示。通过对字线施加偏置电压，所需电流来自数字线。参考库SRAM单元固有地补偿了工艺变化。可调节温度系数偏置发生器允许由数字线引起的电流由于温度变化而极大地变化。因此，本发明补偿了工艺变化和温度变化。

9. 发明授权

US06337813B2 Method of regulating a voltage difference between a word line and a digit line of a load less, four transistor memory cell 失效
标题翻译：调节负载较小的四晶体管存储单元的字线和数字线之间的电压差的方法
公开(公告)号：US06337813B2
公开(公告)日：2002-01-08
申请号：US09732533
申请日：2000-12-08
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： G11C1604
CPC分类号： G11C11/418
摘要： The present invention is a current-mirror-based bias generator for a load less four transistor SRAM as well as associated methods of controlling or modifying the current conducted by the access transistors of such an SRAM. The present invention may be thought of as an adjustable temperature coefficient, bias generator that references, via a current mirror, a reference bank of SRAM cells. The bank of reference cells provides an indication of the necessary conduction characteristics (e.g., gate to source voltage) of the access transistors under various conditions. By applying a bias voltage to the word line the desired current is sourced from the digit line. The bank of reference SRAM cells inherently compensates for process variations. The adjustable temperature coefficient bias generator allows the current sourced by the digit lines to vary greatly as a result of temperature variations. Thus, the present invention compensates for both process variations and temperature variations.
摘要翻译：本发明是一种用于负载少于四个晶体管SRAM的基于电流镜的偏置发生器，以及控制或修改由这种SRAM的存取晶体管传导的电流的相关方法。本发明可以被认为是可调温度系数，偏置发生器，其通过电流镜参考SRAM单元的参考组。参考单元组在各种条件下提供存取晶体管所必需的导通特性（例如，栅 - 源电压）的指示。通过对字线施加偏置电压，所需电流来自数字线。参考库SRAM单元固有地补偿了工艺变化。可调节温度系数偏置发生器允许由数字线引起的电流由于温度变化而极大地变化。因此，本发明补偿了工艺变化和温度变化。

10. 发明授权

US06285062B1 Adjustable high-trigger-voltage electrostatic discharge protection device 有权
公开(公告)号：US06285062B1
公开(公告)日：2001-09-04
申请号：US09310288
申请日：1999-05-12
申请人： Ken W. Marr
发明人： Ken W. Marr
IPC分类号： H01L2362
CPC分类号： H01L27/0255
摘要： An apparatus includes a first doped region, a first doped well, a first doped plug, a second doped plug, and an isolation structure. The first doped well is disposed within the first doped region. The first doped plug is disposed within the first doped well. The second doped plug is disposed within the first doped region. The isolation structure is disposed between the first and second doped plugs. A method includes providing a first doped region. A first doped well is formed within the first doped region, and a first doped plug is formed within the first doped well. A second doped plug is formed within the first doped region, and an isolation structure is formed between the first and second doped plugs.

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