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1. 发明授权

US4599241A Method for inspecting defects of thin material film 失效
标题翻译：检查薄膜薄膜缺陷的方法
公开(公告)号：US4599241A
公开(公告)日：1986-07-08
申请号：US683202
申请日：1984-12-18
申请人： Hiroshi Nakaboh , Ken Ogura
发明人： Hiroshi Nakaboh , Ken Ogura
IPC分类号： H01L21/66 , G01R31/28 , B05D5/12
CPC分类号： G01R31/2831
摘要： A thin material film for the manufacture of a semiconductor device is inspected in the presence of pinholes therein. This is achieved by forming a reactive material film which can gasify through a chemical reaction with a reactive solution on the surface of a semiconductor substrate and thin material film to be tested which can chemically resist the reactive solution is formed on the surface of the reactive material film, whereby the structure obtained by the above steps is immersed into the reactive solution.
摘要翻译：在其中存在针孔的情况下检查用于制造半导体器件的薄材料膜。这通过形成反应性材料膜来实现，该反应性材料膜可以通过与半导体衬底的表面上的反应性溶液的化学反应和待测试的薄材料膜进行气化，所述薄膜材料膜可以在反应性材料的表面上形成化学抗蚀反应性溶液由此将通过上述步骤获得的结构浸入反应溶液中。

2. 发明授权

US4791046A Process for forming mask patterns of positive type resist material with trimethylsilynitrile 失效
标题翻译：用三甲基甲硅烷基腈形成正型抗蚀剂材料的掩模图案的方法
公开(公告)号：US4791046A
公开(公告)日：1988-12-13
申请号：US50482
申请日：1987-05-18
申请人： Ken Ogura
发明人： Ken Ogura
IPC分类号： G03F7/016 , G03F7/075 , G03F7/26
CPC分类号： G03F7/016 , G03F7/0755
摘要： A process for forming high resolution resist patterns using a positive type resist material comprising a photoactive resin having phenolic hydroxyl groups, an organic solvent, and 5 to 50% by weight of trimethylsilylnitride.The process for forming high resolution mask patterns comprises the steps of forming a first resist layer on a wafer for planarizing the wafer surface, forming a second resist layer on said first resist layer by using the positive type resist material mentioned above wherein the first resist layer has a higher plasma etch rate than the second resist layer, exposing and removing the second resist layer so as to form a mask pattern, and subjecting the mask pattern and the first resist layer to a reactive ion etching so as to removce the first resist layer by using the mask pattern as an etching mask.
摘要翻译：使用包含具有酚羟基的光活性树脂，有机溶剂和5至50重量％的三甲基甲硅烷基氮化物的正型抗蚀剂材料形成高分辨率抗蚀剂图案的方法。用于形成高分辨率掩模图案的工艺包括以下步骤：在晶片上形成用于平坦化晶片表面的第一抗蚀剂层，通过使用上述的正型抗蚀剂材料在第一抗蚀剂层上形成第二抗蚀剂层，其中第一抗蚀剂层具有比第二抗蚀剂层更高的等离子体蚀刻速率，曝光和去除第二抗蚀剂层以形成掩模图案，并对掩模图案和第一抗蚀剂层进行反应离子蚀刻，以便去除第一抗蚀剂层通过使用掩模图案作为蚀刻掩模。

3. 发明授权

US4686280A Positive type resist material with trimethylsilylnitrile 失效
标题翻译：带三甲基甲硅烷基腈的正型抗蚀剂材料
公开(公告)号：US4686280A
公开(公告)日：1987-08-11
申请号：US727395
申请日：1985-04-25
申请人： Ken Ogura
发明人： Ken Ogura
IPC分类号： G03F7/26 , G03C1/00 , G03C1/72 , G03C5/00 , G03F7/022 , G03F7/075 , G03F7/095 , G03F7/11 , G03F7/22 , G03F7/23 , H01L21/027 , G03C1/60
CPC分类号： G03F7/0755
摘要： A positive type resist material with high oxygen plasma resistance and a process for forming high resolution resist patterns using the resist material are disclosed. The positive type resist material comprises a photoactive resin, an organic solvent, and 5 to 50% by weight of trimethylsilylnitrile.A compound of a phenol resin having phenolic hydroxyl groups and a photoactive compound, or phenolformaldehyde is used as an example of the photoactive resin. As the solvent, selected from the group consisting of 1,2-ethoxyl acetate, methyl ethyl ketone, xylene, and n-butyl acetate are used alone or in combination. The process for forming high resolution resist patterns comprises steps of forming a first resist layer for planarizing a wafer surface, forming a second resist layer on the first resist layer by using the above mentioned positive type resist material, forming patterns on the second resist layer by exposing the second resist layer to the exposure energy and developing, and transferring the patterns on the second resist layer to the first resist layer and the wafer by reactive ion etching using the second resist layer as an etching mask.
摘要翻译：公开了具有高氧等离子体电阻的正型抗蚀剂材料和使用抗蚀剂材料形成高分辨率抗蚀剂图案的工艺。正型抗蚀剂材料包含光活性树脂，有机溶剂和5至50重量％的三甲基甲硅烷基腈。使用具有酚羟基的酚树脂和光活性化合物或酚醛树脂的化合物作为光活性树脂的实例。作为溶剂，可以单独或组合使用选自1,2-乙氧基乙酸酯，甲基乙基酮，二甲苯和乙酸正丁酯的溶剂。用于形成高分辨率抗蚀剂图案的方法包括以下步骤：形成用于平坦化晶片表面的第一抗蚀剂层，通过使用上述正型抗蚀剂材料在第一抗蚀剂层上形成第二抗蚀剂层，在第二抗蚀剂层上形成图案，将第二抗蚀剂层暴露于曝光能量并显影，并且通过使用第二抗蚀剂层作为蚀刻掩模的反应离子蚀刻将第二抗蚀剂层上的图案转印到第一抗蚀剂层和晶片。

4. 发明授权

US4497693A Method for plating an article and the apparatus therefor 失效
标题翻译：电镀物品的方法及其装置
公开(公告)号：US4497693A
公开(公告)日：1985-02-05
申请号：US592087
申请日：1984-03-22
申请人： Ken Ogura , Nobuhiko Yamada , Hiroshi Ohmi
发明人： Ken Ogura , Nobuhiko Yamada , Hiroshi Ohmi
IPC分类号： C25D7/00 , C25D5/02 , C25D5/04 , C25D17/08 , C25D21/10 , C25D17/06
CPC分类号： C25D5/02 , C25D5/04 , C25D21/10 , Y10S204/07
摘要： A method and apparatus for plating an article having a portion that needs no plating at a high speed including as main components a chuck for chucking the article at the portion above stated and a shield cover for enclosing the chuck, maintaining a space therebetween. The space indicated above works to prevent an electrolyte from raising its level, thus keeping said portion out of said the electrolyte.
摘要翻译：一种用于电镀具有不需要高速电镀的部分的制品的方法和装置，包括作为主要部件的用于将物品夹持在上述部分的卡盘和用于封闭卡盘的屏蔽罩，保持其间的空间。上述空间用于防止电解液升高其水平，从而将所述部分保持在所述电解质之外。

5. 发明授权

US06706554B2 Conductor posts, construction for and method of fabricating semiconductor integrated circuit chips using the conductor post, and method of probing semiconductor integrated circuit chips 失效
标题翻译：使用导体柱的导体柱，制造半导体集成电路芯片的结构和方法以及探测半导体集成电路芯片的方法
公开(公告)号：US06706554B2
公开(公告)日：2004-03-16
申请号：US09883363
申请日：2001-06-19
申请人： Ken Ogura
发明人： Ken Ogura
IPC分类号： H01L2144
CPC分类号： H01L24/81 , H01L21/76885 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/75 , H01L2224/0401 , H01L2224/05109 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/0518 , H01L2224/05184 , H01L2224/05609 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05678 , H01L2224/05684 , H01L2224/0603 , H01L2224/06102 , H01L2224/1147 , H01L2224/11472 , H01L2224/11474 , H01L2224/11822 , H01L2224/11902 , H01L2224/13076 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13109 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13155 , H01L2224/13166 , H01L2224/1318 , H01L2224/13184 , H01L2224/13582 , H01L2224/136 , H01L2224/1403 , H01L2224/14104 , H01L2224/45144 , H01L2224/742 , H01L2224/75 , H01L2224/81801 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/013
摘要： A first IC chip having an electrode pad to which a re-wiring layer is not connected and a second IC chip having an electrode pad to which the re-wiring layer is connected are electrically connected to each other via a conductor post formed on the electrode pad on the first IC chip, thereby electrically connecting and integrating the first and second IC chips.
摘要翻译：具有未连接有再布线层的电极焊盘的第一IC芯片和具有连接有再布线层的电极焊盘的第二IC芯片通过形成在电极上的导体柱彼此电连接在第一IC芯片上焊盘，从而电连接和集成第一和第二IC芯片。

6. 发明授权

US4877496A Zinc-nickel alloy plating solution 失效
标题翻译：锌镍合金电镀液
公开(公告)号：US4877496A
公开(公告)日：1989-10-31
申请号：US291962
申请日：1988-12-30
申请人： Moriyuki Yanagawa , Shunichi Ishida , Ken Ogura , Yushi Saito
发明人： Moriyuki Yanagawa , Shunichi Ishida , Ken Ogura , Yushi Saito
IPC分类号： C25D3/56
CPC分类号： C25D3/565
摘要： A zinc-nickel alloy plating solution in an aqueous solution comprising, as represented in terms of ions, 4-30 g/liter of zinc and 0.05-4 g/liter of nickel, together with 50-220 g/liter of an alkali hydroxide, 4-110 g/liter of a complexing agent, 0.1-10 g/liter of a primary brightener, 0.01-0.2 g/liter of a booster brightener and preferably, further, 0.01-0.05 g/liter of a tertiary brightener. The primary brightener is at least one selected from the reaction products of amines such as ethylenediamine or its methyl-substituted derivatives, propylenediamine or its methyl-substituted derivatives, diethylenetriamine or its methyl-substituted derivatives, and the like with epihalohydrin. The booster brightener is at least one selected from aromatic aldehydes such as anisaldehyde, vanillin, heliotropin, veratraldehyde, and the like. The tertiary brightener is at least one selected from tellurium oxide, tellurous acid or its salts, or telluric acid or its salt.
摘要翻译：在水溶液中的锌 - 镍合金电镀溶液，其包含如离子表示的4-30g /升锌和0.05-4g /升镍，以及50-220g /升碱金属氢氧化物，4-110g /升络合剂，0.1-10g /升初级增白剂，0.01-0.2g /升增亮剂，优选0.01-0.05g /升三级增白剂。一级增白剂是选自胺类如乙二胺或其甲基取代的衍生物，丙二胺或其甲基取代的衍生物，二亚乙基三胺或其甲基取代的衍生物等与表卤代醇的反应产物中的至少一种。增效增白剂是选自芳族醛，如茴香醛，香草醛，延胡萝卜素，藜芦醛等中的至少一种。三级增白剂是选自氧化碲，二氯乙酸或其盐，或碲酸或其盐中的至少一种。

7. 发明授权

US4528216A Process for forming heat-resistant resin films of polyimide and organosilicic reactants 失效
标题翻译：用于形成聚酰亚胺和有机硅反应物的耐热树脂膜的方法
公开(公告)号：US4528216A
公开(公告)日：1985-07-09
申请号：US581365
申请日：1984-02-17
申请人： Ken Ogura , Hiroshi Nakaboh
发明人： Ken Ogura , Hiroshi Nakaboh
IPC分类号： B05D7/26 , C08G73/10 , H01L21/312 , B05D3/02
CPC分类号： H01L21/3121 , C08G73/1007 , C08G73/106 , Y10T428/31721
摘要： A process for forming heat resistant resin films comprising the steps of admixing a polyimide resin precursor solution, for example, a solution containing a reactant obtained from pyrromellitic dianhydride, 3,3',4,4'-benzophenyltetracarboxylic acid dianhydride, 4,4'-diaminodiphenyl ether, and 4,4'-diaminodiphenyl ether-3-carbonic amide with an organosilicic compound solution, coating a silicon substrate with the resulting admixture, and subjecting said coated silicon substrate to heat treatment.
摘要翻译：一种形成耐热树脂膜的方法，包括以下步骤：将聚酰亚胺树脂前体溶液，例如含有由吡咯钼酸二酐制得的反应物，3,3'，4,4'-苯并苯基四羧酸二酐，4,4' - 二氨基二苯醚和4,4'-二氨基二苯醚-3-碳酰胺与有机硅化合物溶液，用所得混合物涂覆硅基板，并对所述涂覆的硅基板进行热处理。

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