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    • 2. 发明授权
    • Conveying machine
    • 输送机
    • US06851543B2
    • 2005-02-08
    • US10364968
    • 2003-02-12
    • Ken Nakanishi
    • Ken Nakanishi
    • B65G35/06B65G19/02B65G23/30B65G47/28
    • B65G23/30B65G19/02
    • There are provided linear section moving chain conveyors for moving carrier trucks on linear sections of a guide rail, curvilinear section moving chain conveyors for moving the carrier trucks on curvilinear sections of a guide rail, and conveyance interval variable portions for moving the carrier trucks on borders between the linear sections and the curvilinear sections while gradually varying the interval between the carrier trucks. When the carrier trucks are moved from a linear section to the following curvilinear section, spiral screws of the conveyance interval variable portions gradually widen the intervals between the carrier trucks, and when the carrier trucks are moved from a curvilinear section to the following linear section, the screws gradually narrow the intervals between the carrier trucks.
    • 提供线性部分移动链式输送机,用于在导轨的线性部分上移动运载工具,用于在导轨的曲线部分上移动运输工具的运动链条输送机,以及用于将运输工具移动到边界的运输间隔可变部分 在线性部分和曲线部分之间,同时逐渐改变载重卡车之间的间隔。 当运输卡车从线性部分移动到以下曲线部分时,输送间隔可变部分的螺旋形螺钉逐渐加宽托架之间的间隔,并且当运输卡车从曲线部分移动到下一直线部分时, 螺丝逐渐缩小载货车之间的间隔。
    • 3. 发明申请
    • Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device
    • 离子掺杂装置,离子掺杂法,半导体装置及其制造方法
    • US20090014725A1
    • 2009-01-15
    • US10588164
    • 2005-02-01
    • Ken Nakanishi
    • Ken Nakanishi
    • H01L29/04H01L21/66H01J37/08
    • H01L29/66757H01J37/304H01J2237/0815H01J2237/31701H01L21/67115H01L29/78675
    • An ion doping apparatus includes: a chamber 11; a discharge section 13 for discharging a gaseous content from within the chamber 11; an ion source 12 being provided in the chamber 11 and including an inlet 14 through which to introduce a gas containing an element to be used for doping, the ion source 12 decomposing the gas introduced through the inlet 14 to generate ions containing the element to be used for doping; an acceleration section 23 for pulling out from the ion source 12 the ions generated at the ion source 12 and accelerating the ions toward a target object held in the chamber; and a beam current meter 26 for measuring a beam current caused by the accelerated ions. The beam current is measured by the beam current meter 26 a plurality of times, and if a result of the measurements indicates a stability of the beam current, the ion doping apparatus automatically begins to implant into the target object the ions containing the element to be used for doping. Thus, an ion doping apparatus having excellent doping amount controllability is provided.
    • 离子掺杂装置包括:室11; 用于从室11内排出气态物质的排出部13; 离子源12设置在腔室11中并且包括入口14,通过该入口14引入包含用于掺杂的元素的气体,离子源12分解通过入口14引入的气体以产生含有元素的离子 用于掺杂; 用于从离子源12离开在离子源12处产生的离子并将离子加速到保持在腔室中的目标物体的加速部分23; 以及用于测量由加速离子引起的束电流的光束电流计26。 束电流由波束电流计26测量多次,如果测量结果表明射束电流的稳定性,则离子掺杂装置自动开始向目标物体中注入含有元素的离子 用于掺杂。 因此,提供了具有优异的掺杂量可控性的离子掺杂装置。
    • 5. 发明授权
    • Ion doping system, ion doping method and semiconductor device
    • 离子掺杂系统,离子掺杂法和半导体器件
    • US07230256B2
    • 2007-06-12
    • US10559128
    • 2004-05-31
    • Ken NakanishiHiroshi Aichi
    • Ken NakanishiHiroshi Aichi
    • H01L29/04
    • H01J27/08H01J37/08H01J2237/31701H01L21/265H01L29/66757
    • An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source 12, from the ion source 12 and accelerating the ions toward a target. The ion source 12 includes an inlet port 14 to introduce a gas including a dopant element, a filament 15 emitting thermo electrons, and an anode electrode 17 to produce an arc discharge between the filament and itself. The ion source 12 decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.
    • 离子掺杂系统包括:腔室11,用于从腔室排出气体的排气部分13,为腔室提供的离子源12;以及用于从离子源12中提取离子源中产生的离子的加速部分23; 12并将离子加速到靶。 离子源12包括用于引入包括掺杂剂元素的气体,发射热电子的灯丝15和阳极电极17的入口端口14,以在灯丝本身之间产生电弧放电。 离子源12通过电弧放电分解气体,从而产生包括掺杂元素的离子。 离子掺杂系统控制电弧放电,使得恒定量的电弧电流在灯丝和阳极之间流动。
    • 6. 发明授权
    • Sorting machine
    • 分拣机
    • US07166814B2
    • 2007-01-23
    • US10426853
    • 2003-05-01
    • Ken NakanishiTetsuo Ogata
    • Ken NakanishiTetsuo Ogata
    • B65G47/00
    • B07C5/36Y10S209/912Y10S209/922
    • The sorting machine main body of a sorting machine is a slender machine provided with a chain conveyer along an upper and lower two level endless loop route, and includes an IN side turn back portion, a transfer portion, a sorting portion, an OUT side turn back portion in this order from the IN side. Gathering boxes are provided on both the left and right sides in the advancing direction of the chain conveyer. A plurality of carrier boxes hangs from the chain conveyer. The carrier boxes are thrown with loads at the transfer portion, and are delivered by the chain conveyer and discharges the loads at a predetermined location according to the loads. The belt conveyer conveys the discharged loads to the gathering box.
    • 分拣机的分拣机主体是沿着上下两层无端环路设置有链式输送机的细长机器,包括IN侧翻转部,转印部,分拣部,OUT侧匝 后面部分按此顺序从IN侧。 在链式输送机的前进方向上的左右两侧设置收集箱。 多个载体箱从链条输送机悬挂。 承载箱在传送部分处被承载,并由链式输送机输送,并根据载荷在预定位置排放负载。 带式输送机将排出的载荷传送到收集箱。
    • 7. 发明申请
    • Ion doping system, ion doping method and semiconductor device
    • 离子掺杂系统,离子掺杂法和半导体器件
    • US20060151786A1
    • 2006-07-13
    • US10559128
    • 2004-05-31
    • Ken NakanishiHiroshi Aichi
    • Ken NakanishiHiroshi Aichi
    • H01L29/04
    • H01J27/08H01J37/08H01J2237/31701H01L21/265H01L29/66757
    • An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source 12, from the ion source 12 and accelerating the ions toward a target. The ion source 12 includes an inlet port 14 to introduce a gas including a dopant element, a filament 15 emitting thermo electrons, and an anode electrode 17 to produce an arc discharge between the filament and itself. The ion source 12 decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.
    • 离子掺杂系统包括:腔室11,用于从腔室排出气体的排气部分13,为腔室提供的离子源12;以及用于从离子源12中提取离子源中产生的离子的加速部分23; 12并将离子加速到靶。 离子源12包括用于引入包括掺杂剂元素的气体,发射热电子的灯丝15和阳极电极17的入口端口14,以在灯丝本身之间产生电弧放电。 离子源12通过电弧放电分解气体,从而产生包括掺杂元素的离子。 离子掺杂系统控制电弧放电,使得恒定量的电弧电流在灯丝和阳极之间流动。
    • 8. 发明授权
    • Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device
    • 离子掺杂装置,离子掺杂法,半导体装置及其制造方法
    • US07745803B2
    • 2010-06-29
    • US10588164
    • 2005-02-01
    • Ken Nakanishi
    • Ken Nakanishi
    • H01J37/04
    • H01L29/66757H01J37/304H01J2237/0815H01J2237/31701H01L21/67115H01L29/78675
    • An ion doping apparatus includes: a chamber 11; a discharge section 13 for discharging a gaseous content from within the chamber 11; an ion source 12 being provided in the chamber 11 and including an inlet 14 through which to introduce a gas containing an element to be used for doping, the ion source 12 decomposing the gas introduced through the inlet 14 to generate ions containing the element to be used for doping; an acceleration section 23 for pulling out from the ion source 12 the ions generated at the ion source 12 and accelerating the ions toward a target object held in the chamber; and a beam current meter 26 for measuring a beam current caused by the accelerated ions. The beam current is measured by the beam current meter 26 a plurality of times, and if a result of the measurements indicates a stability of the beam current, the ion doping apparatus automatically begins to implant into the target object the ions containing the element to be used for doping. Thus, an ion doping apparatus having excellent doping amount controllability is provided.
    • 离子掺杂装置包括:室11; 用于从室11内排出气态物质的排出部13; 离子源12设置在腔室11中并且包括入口14,通过该入口14引入包含用于掺杂的元素的气体,离子源12分解通过入口14引入的气体以产生含有元素的离子 用于掺杂; 用于从离子源12离开在离子源12处产生的离子并将离子加速到保持在腔室中的目标物体的加速部分23; 以及用于测量由加速离子引起的束电流的光束电流计26。 束电流由波束电流计26测量多次,如果测量结果表明射束电流的稳定性,则离子掺杂装置自动开始向目标物体中注入含有元素的离子 用于掺杂。 因此,提供了具有优异的掺杂量可控性的离子掺杂装置。