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1. 发明授权

US07230256B2 Ion doping system, ion doping method and semiconductor device 有权
标题翻译：离子掺杂系统，离子掺杂法和半导体器件
公开(公告)号：US07230256B2
公开(公告)日：2007-06-12
申请号：US10559128
申请日：2004-05-31
申请人： Ken Nakanishi , Hiroshi Aichi
发明人： Ken Nakanishi , Hiroshi Aichi
IPC分类号： H01L29/04
CPC分类号： H01J27/08 , H01J37/08 , H01J2237/31701 , H01L21/265 , H01L29/66757
摘要： An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source 12, from the ion source 12 and accelerating the ions toward a target. The ion source 12 includes an inlet port 14 to introduce a gas including a dopant element, a filament 15 emitting thermo electrons, and an anode electrode 17 to produce an arc discharge between the filament and itself. The ion source 12 decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.
摘要翻译：离子掺杂系统包括：腔室11，用于从腔室排出气体的排气部分13，为腔室提供的离子源12;以及用于从离子源12中提取离子源中产生的离子的加速部分23; 12并将离子加速到靶。离子源12包括用于引入包括掺杂剂元素的气体，发射热电子的灯丝15和阳极电极17的入口端口14，以在灯丝本身之间产生电弧放电。离子源12通过电弧放电分解气体，从而产生包括掺杂元素的离子。离子掺杂系统控制电弧放电，使得恒定量的电弧电流在灯丝和阳极之间流动。

2. 发明申请

US20060151786A1 Ion doping system, ion doping method and semiconductor device 有权
标题翻译：离子掺杂系统，离子掺杂法和半导体器件
公开(公告)号：US20060151786A1
公开(公告)日：2006-07-13
申请号：US10559128
申请日：2004-05-31
申请人： Ken Nakanishi , Hiroshi Aichi
发明人： Ken Nakanishi , Hiroshi Aichi
IPC分类号： H01L29/04
CPC分类号： H01J27/08 , H01J37/08 , H01J2237/31701 , H01L21/265 , H01L29/66757
摘要： An ion doping system includes a chamber 11, an exhausting section 13 for exhausting gases from the chamber, an ion source 12 provided for the chamber, and an accelerating section 23 for extracting the ions, generated in the ion source 12, from the ion source 12 and accelerating the ions toward a target. The ion source 12 includes an inlet port 14 to introduce a gas including a dopant element, a filament 15 emitting thermo electrons, and an anode electrode 17 to produce an arc discharge between the filament and itself. The ion source 12 decomposes the gas through the arc discharge, thereby generating ions including the dopant element. The ion doping system controls the arc discharge such that a constant amount of arc current flows between the filament and the anode electrode.
摘要翻译：离子掺杂系统包括：腔室11，用于从腔室排出气体的排气部分13，为腔室提供的离子源12;以及用于从离子源12中提取离子源中产生的离子的加速部分23; 12并将离子加速到靶。离子源12包括用于引入包括掺杂剂元素的气体，发射热电子的灯丝15和阳极电极17的入口端口14，以在灯丝本身之间产生电弧放电。离子源12通过电弧放电分解气体，从而产生包括掺杂元素的离子。离子掺杂系统控制电弧放电，使得恒定量的电弧电流在灯丝和阳极之间流动。

3. 发明授权

US08810762B2 Display device equipped with touch sensor 有权
标题翻译：显示设备配有触摸传感器
公开(公告)号：US08810762B2
公开(公告)日：2014-08-19
申请号：US13700818
申请日：2011-05-27
申请人： Tatsuya Kawasaki , Hiroshi Aichi
发明人： Tatsuya Kawasaki , Hiroshi Aichi
IPC分类号： G02F1/1343 , H01L27/15 , G02F1/1347 , G02F1/1362 , G02F1/133 , G02F1/1333 , G06F3/041 , G06F3/042
CPC分类号： G02F1/13318 , G02F1/13338 , G02F1/13471 , G02F1/136286 , G06F3/0412 , G06F3/042 , H01L27/156
摘要： Disclosed is a display device that has a light detecting element (D1) disposed in a pixel region (1), an opening (a through hole) (19a) formed in an insulating film (19) that is disposed above the light detecting element (D1), and a transparent electrode (20) formed in the opening (19a), and that can reduce occurrence of leakage between the transparent electrode (20) and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate (100) in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D1) disposed on a pixel region (1) in the active matrix substrate (100). The display device has a first insulating film (17) formed between the first wiring line (SL) and the second wiring line (GL), a second insulating film (19) disposed on the first insulating film (17), and a transparent electrode (20) formed above the light detecting element (D1) so as to enter a through hole (19a) formed in the second insulating film (19). The first wiring line (SL) has a discontinuous section at a part adjacent to the light detecting element, and both ends of the discontinuous section are electrically connected to each other through an auxiliary wiring line (16) disposed in the same layer as that of the second wiring line (GL).
摘要翻译：公开了一种显示装置，其具有设置在像素区域（1）中的光检测元件（D1），形成在绝缘膜（19）中的开口（通孔）（19a），该绝缘膜设置在光检测元件 D1）和形成在开口（19a）中的透明电极（20），并且可以减少透明电极（20）和其它布线（SL）之间的泄漏发生。具体公开了一种具有有源矩阵基板（100）的显示装置，其中第一布线（SL）和第二布线（GL）形成为彼此交叉，并且设置有光检测元件（D1）在有源矩阵基板（100）中的像素区域（1）上。显示装置具有形成在第一布线（SL）和第二布线（GL）之间的第一绝缘膜（17），设置在第一绝缘膜（17）上的第二绝缘膜（19）和透明电极（20）形成在光检测元件（D1）上方，以进入形成在第二绝缘膜（19）中的通孔（19a）。第一布线（SL）在与光检测元件相邻的部分处具有不连续部分，并且不连续部分的两端通过与布置在相同层中的辅助布线（16）彼此电连接，第二布线（GL）。

4. 发明申请

US20120320307A1 ACTIVE MATRIX SUBSTRATE, GLASS SUBSTRATE, LIQUID CRYSTAL PANEL AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：有源矩阵基板，玻璃基板，液晶板和液晶显示装置
公开(公告)号：US20120320307A1
公开(公告)日：2012-12-20
申请号：US13578963
申请日：2010-11-12
申请人： Hiroshi Aichi , Tetsuya Yamauchi , Norimasa Iwai , Yasuo Mizokoshi
发明人： Hiroshi Aichi , Tetsuya Yamauchi , Norimasa Iwai , Yasuo Mizokoshi
IPC分类号： H01L27/15 , G02F1/13357 , G02F1/1335
CPC分类号： H01L31/153 , G02F1/13318 , G02F1/133512 , G06F3/0412 , H01L27/1446
摘要： Each pixel 105 includes a display part 111 for displaying an image and a sensor 112 for detecting light. The sensors 112 of the pixels 105 that are systematically pre-selected from a plurality of pixels 105 are provided with a photodiode 115 and a light-shielding film 116 in a manner such that the light-shielding film 116 is positioned below the photodiode 115 so as to overlap the photodiode 115 when viewed from the direction perpendicular to the active matrix substrate, and wiring lines 117 and bus lines 118 that electrically connect all light-shielding films 116 to each other are provided so as to avoid the display parts 111. This makes it possible to provide an active matrix substrate, a glass substrate, a liquid crystal panel, and a liquid crystal display device that can reduce the occurrence of damage due to electrostatic discharge when they are equipped with a light-receiving element and a light-shielding film to achieve optical sensor function.
摘要翻译：每个像素105包括用于显示图像的显示部分111和用于检测光的传感器112。从多个像素105系统地预先选择的像素105的传感器112以这样的方式设置有光电二极管115和遮光膜116，使得遮光膜116位于光电二极管115的下方，从而为了从与有源矩阵基板垂直的方向观察时与光电二极管115重叠，并且设置将所有遮光膜116彼此电连接的布线117和总线118，以避免显示部111。使得可以提供一种有源矩阵基板，玻璃基板，液晶面板和液晶显示装置，当它们配备有光接收元件和发光元件时，可以减少由静电放电引起的损坏的发生。屏蔽膜实现光学传感器功能。

5. 发明申请

US20130082267A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE EQUIPPED WITH SAME 有权
标题翻译：具有相同功能的半导体器件和显示器件
公开(公告)号：US20130082267A1
公开(公告)日：2013-04-04
申请号：US13703248
申请日：2011-06-14
申请人： Hiroshi Aichi
发明人： Hiroshi Aichi
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , H01L27/1214 , H01L27/1446
摘要： Disclosed is a semiconductor device 1000 including a substrate 1, a thin film diode 100 that is supported by the substrate 1 and has a first semiconductor layer 10 having a light-receiving region 10i, a thin film transistor 200 that is supported by the substrate 1 and has a second semiconductor layer 20, and a metal layer 22a that has an inclined surface 23 that is inclined to the surface of the substrate 1, in which the thin film diode 100 can detect light that enters the light-receiving region 10i and has a prescribed wavelength, in which both the first semiconductor layer 10 and the second semiconductor layer 20 are composed of the same semiconductor film, and in which the inclined surface 23 of the metal layer 22a faces at least a part of the side faces 3R and 3L of the first semiconductor layer 10. This constitution enables an increase in the amount of light absorbed by the thin film diode and an improvement in the effective light reception sensitivity of an optical sensor part.
摘要翻译：公开了一种半导体器件1000，其包括基板1，薄膜二极管100，其被基板1支撑并具有由受光区域10i构成的第一半导体层10，由基板1支撑的薄膜晶体管200 并且具有第二半导体层20和具有与基板1的表面倾斜的倾斜表面23的金属层22a，其中薄膜二极管100可以检测进入光接收区域10i的光并且具有其中第一半导体层10和第二半导体层20都由相同的半导体膜组成，其中金属层22a的倾斜表面23面向至少一部分侧面3R和3L的规定波长这种结构使得能够增加由薄膜二极管吸收的光量并提高光学传感器部件的有效光接收灵敏度。

6. 发明授权

US08766337B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08766337B2
公开(公告)日：2014-07-01
申请号：US13512034
申请日：2010-11-24
申请人： Hiroshi Aichi
发明人： Hiroshi Aichi
IPC分类号： H01L31/062 , H01L27/146 , G02F1/1368 , H01L29/786 , G06F3/041
CPC分类号： G02F1/1368 , G06F3/0412 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H01L27/14678 , H01L29/78633
摘要： A first thin film diode (100A) has a first semiconductor layer (10A) and a first light blocking layer (12A) disposed on the substrate side of the first semiconductor layer. A second thin film diode (100B) has a second semiconductor layer (10B) and a second light blocking layer (12B) disposed on the substrate side of the second semiconductor layer. An insulating film (14) is formed between the first semiconductor layer (10A) and the first light blocking layer (12A) and between the second semiconductor layer (10B) and the second light blocking layer (12B). A thickness D1 of a portion of the insulating film (14) positioned between the first semiconductor layer (10A) and the first light blocking layer (12A) is different from a thickness D2 of a portion of the insulating film (14) positioned between the second semiconductor layer (10B) and the second light blocking layer (12B). The intensity of light in a first wavelength region incident on the first semiconductor layer (10A) is higher than the intensity of light in the first wavelength region incident on the second semiconductor layer (10B). The intensity of light in a second wavelength region including a wavelength longer than the maximum wavelength of the first wavelength region incident on the second semiconductor layer (10B) is higher than the intensity of light in the second wavelength region incident on the first semiconductor layer (10A).
摘要翻译：第一薄膜二极管（100A）具有设置在第一半导体层的基板侧上的第一半导体层（10A）和第一遮光层（12A）。第二薄膜二极管（100B）具有设置在第二半导体层的基板侧上的第二半导体层（10B）和第二遮光层（12B）。在第一半导体层（10A）和第一遮光层（12A）之间以及第二半导体层（10B）和第二遮光层（12B）之间形成绝缘膜（14）。位于第一半导体层（10A）和第一遮光层（12A）之间的绝缘膜（14）的一部分的厚度D1不同于绝缘膜（14）的位于第一半导体层第二半导体层（10B）和第二遮光层（12B）。入射在第一半导体层（10A）上的第一波长区域的光的强度高于入射在第二半导体层（10B）上的第一波长区域中的光的强度。包括入射在第二半导体层（10B）上的比第一波长区域的最大波长长的波长的第二波长区域的光的强度高于入射在第一半导体层上的第二波长区域的光的强度（ 10A）。

7. 发明申请

US20120104530A1 SUBSTRATE FOR DISPLAY PANEL, AND DISPLAY DEVICE 审中-公开
标题翻译：显示面板基板和显示设备
公开(公告)号：US20120104530A1
公开(公告)日：2012-05-03
申请号：US13378617
申请日：2010-02-18
申请人： Seiji Kaneko , Masahiro Fujiwara , Hiroshi Aichi , Noboru Takeuchi
发明人： Seiji Kaneko , Masahiro Fujiwara , Hiroshi Aichi , Noboru Takeuchi
IPC分类号： H01L27/146
CPC分类号： G06F3/0412 , G02F1/133514 , G02F1/1362 , G02F2001/13312 , G02F2201/52 , G06F3/042 , H01L27/3227 , H01L27/323
摘要： A display panel substrate includes a plurality of pixels, a pixel in the display panel substrate including a PIN diode for conducting therethrough a different electric current in accordance with an amount of light received by the light receiving element, a first inorganic insulating film formed on the PIN diode, a line formed on or above the first inorganic insulating film and electrically connected to the PIN diode, an organic insulating film formed on or above the line, a transparent pixel electrode formed on the organic insulating film, and a transparent cover electrode provided at such a position that the transparent electrode is located between the organic insulating film and the first inorganic insulating film and formed to cover at least a part of an I-layer of the PIN diode.
摘要翻译：显示面板基板包括多个像素，所述显示面板基板中的像素包括PIN二极管，用于根据由所述光接收元件接收的光量而导致不同的电流;第一无机绝缘膜，形成在所述第二无机绝缘膜上; PIN二极管，形成在第一无机绝缘膜上或上方并与PIN二极管电连接的线，形成在线上或上方的有机绝缘膜，形成在有机绝缘膜上的透明像素电极，以及设置有透明盖电极在透明电极位于有机绝缘膜和第一无机绝缘膜之间并形成以覆盖PIN二极管的I层的至少一部分的位置。

8. 发明授权

US09018631B2 Semiconductor device and display device equipped with same 有权
标题翻译：半导体装置及其配备的显示装置
公开(公告)号：US09018631B2
公开(公告)日：2015-04-28
申请号：US13703248
申请日：2011-06-14
申请人： Hiroshi Aichi
发明人： Hiroshi Aichi
IPC分类号： H01L29/786 , H01L27/12 , H01L27/144
CPC分类号： H01L29/786 , H01L27/1214 , H01L27/1446
摘要： Disclosed is a semiconductor device 1000 including a substrate 1, a thin film diode 100 that is supported by the substrate 1 and has a first semiconductor layer 10 having a light-receiving region 10i, a thin film transistor 200 that is supported by the substrate 1 and has a second semiconductor layer 20, and a metal layer 22a that has an inclined surface 23 that is inclined to the surface of the substrate 1, in which the thin film diode 100 can detect light that enters the light-receiving region 10i and has a prescribed wavelength, in which both the first semiconductor layer 10 and the second semiconductor layer 20 are composed of the same semiconductor film, and in which the inclined surface 23 of the metal layer 22a faces at least a part of the side faces 3R and 3L of the first semiconductor layer 10. This constitution enables an increase in the amount of light absorbed by the thin film diode and an improvement in the effective light reception sensitivity of an optical sensor part.
摘要翻译：公开了一种半导体器件1000，其包括基板1，薄膜二极管100，其被基板1支撑并具有由受光区域10i构成的第一半导体层10，由基板1支撑的薄膜晶体管200 并且具有第二半导体层20和具有与基板1的表面倾斜的倾斜表面23的金属层22a，其中薄膜二极管100可以检测进入光接收区域10i的光并且具有其中第一半导体层10和第二半导体层20都由相同的半导体膜组成，其中金属层22a的倾斜表面23面向至少一部分侧面3R和3L的规定波长这种结构使得能够增加由薄膜二极管吸收的光量并提高光学传感器部件的有效光接收灵敏度。

9. 发明申请

US20130083258A1 DISPLAY DEVICE EQUIPPED WITH TOUCH SENSOR 有权
标题翻译：显示设备配有触摸传感器
公开(公告)号：US20130083258A1
公开(公告)日：2013-04-04
申请号：US13700818
申请日：2011-05-27
申请人： Tatsuya Kawasaki , Hiroshi Aichi
发明人： Tatsuya Kawasaki , Hiroshi Aichi
IPC分类号： G02F1/133 , H01L27/15
CPC分类号： G02F1/13318 , G02F1/13338 , G02F1/13471 , G02F1/136286 , G06F3/0412 , G06F3/042 , H01L27/156
摘要： Disclosed is a display device that has a light detecting element (D1) disposed in a pixel region (1), an opening (a through hole) (19a) formed in an insulating film (19) that is disposed above the light detecting element (D1), and a transparent electrode (20) formed in the opening (19a), and that can reduce occurrence of leakage between the transparent electrode (20) and other wiring line (SL). Specifically disclosed is a display device that has an active matrix substrate (100) in which a first wiring line (SL) and a second wiring line (GL) are formed so as to cross each other, and a light detecting element (D1) disposed on a pixel region (1) in the active matrix substrate (100). The display device has a first insulating film (17) formed between the first wiring line (SL) and the second wiring line (GL), a second insulating film (19) disposed on the first insulating film (17), and a transparent electrode (20) formed above the light detecting element (D1) so as to enter a through hole (19a) formed in the second insulating film (19). The first wiring line (SL) has a discontinuous section at a part adjacent to the light detecting element, and both ends of the discontinuous section are electrically connected to each other through an auxiliary wiring line (16) disposed in the same layer as that of the second wiring line (GL).
摘要翻译：公开了一种显示装置，其具有设置在像素区域（1）中的光检测元件（D1），形成在绝缘膜（19）中的开口（通孔）（19a），该绝缘膜设置在光检测元件 D1）和形成在开口（19a）中的透明电极（20），并且可以减少透明电极（20）和其它布线（SL）之间的泄漏发生。具体公开了一种具有有源矩阵基板（100）的显示装置，其中第一布线（SL）和第二布线（GL）形成为彼此交叉，并且设置有光检测元件（D1）在有源矩阵基板（100）中的像素区域（1）上。显示装置具有形成在第一布线（SL）和第二布线（GL）之间的第一绝缘膜（17），设置在第一绝缘膜（17）上的第二绝缘膜（19）和透明电极（20）形成在光检测元件（D1）上方，以进入形成在第二绝缘膜（19）中的通孔（19a）。第一布线（SL）在与光检测元件相邻的部分处具有不连续部分，并且不连续部分的两端通过与布置在相同层中的辅助布线（16）彼此电连接，第二布线（GL）。

10. 发明申请

US20120241825A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120241825A1
公开(公告)日：2012-09-27
申请号：US13512034
申请日：2010-11-24
申请人： Hiroshi Aichi
发明人： Hiroshi Aichi
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： G02F1/1368 , G06F3/0412 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H01L27/14678 , H01L29/78633
摘要： A first thin film diode (100A) has a first semiconductor layer (10A) and a first light blocking layer (12A) disposed on the substrate side of the first semiconductor layer. A second thin film diode (100B) has a second semiconductor layer (10B) and a second light blocking layer (12B) disposed on the substrate side of the second semiconductor layer. An insulating film (14) is formed between the first semiconductor layer (10A) and the first light blocking layer (12A) and between the second semiconductor layer (10B) and the second light blocking layer (12B). A thickness D1 of a portion of the insulating film (14) positioned between the first semiconductor layer (10A) and the first light blocking layer (12A) is different from a thickness D2 of a portion of the insulating film (14) positioned between the second semiconductor layer (10B) and the second light blocking layer (12B). The intensity of light in a first wavelength region incident on the first semiconductor layer (10A) is higher than the intensity of light in the first wavelength region incident on the second semiconductor layer (10B). The intensity of light in a second wavelength region including a wavelength longer than the maximum wavelength of the first wavelength region incident on the second semiconductor layer (10B) is higher than the intensity of light in the second wavelength region incident on the first semiconductor layer (10A).
摘要翻译：第一薄膜二极管（100A）具有设置在第一半导体层的基板侧上的第一半导体层（10A）和第一遮光层（12A）。第二薄膜二极管（100B）具有设置在第二半导体层的基板侧上的第二半导体层（10B）和第二遮光层（12B）。在第一半导体层（10A）和第一遮光层（12A）之间以及第二半导体层（10B）和第二遮光层（12B）之间形成绝缘膜（14）。位于第一半导体层（10A）和第一遮光层（12A）之间的绝缘膜（14）的一部分的厚度D1不同于绝缘膜（14）的位于第一半导体层第二半导体层（10B）和第二遮光层（12B）。入射在第一半导体层（10A）上的第一波长区域的光的强度高于入射在第二半导体层（10B）上的第一波长区域中的光的强度。包括入射在第二半导体层（10B）上的比第一波长区域的最大波长长的波长的第二波长区域的光的强度高于入射在第一半导体层上的第二波长区域的光的强度（ 10A）。

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