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1. 发明授权

US5459339A Double gate semiconductor device and control device thereof 失效
标题翻译：半导体功率器件
公开(公告)号：US5459339A
公开(公告)日：1995-10-17
申请号：US53650
申请日：1993-04-29
申请人： Ken'ya Sakurai , Masahito Otsuki , Noriho Terasawa , Tadashi Miyasaka , Akira Nishiura , Masaharu Nishiura
发明人： Ken'ya Sakurai , Masahito Otsuki , Noriho Terasawa , Tadashi Miyasaka , Akira Nishiura , Masaharu Nishiura
IPC分类号： H01L29/739 , H01L29/745 , H01L29/749 , H03K17/0812 , H03K17/082 , H03K17/567 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7395 , H01L29/7455 , H01L29/749 , H03K17/08128 , H03K17/0828 , H03K17/567
摘要： A semiconductor device thyristor structure includes a first conductive type collector region, second conductive type and first conductive type base regions, and a second conductive type emitter region. First conductive type regions and second conductive type regions have respective first and second type majority carriers. A first MOSFET injects the second type majority carriers into the second conductive type base region. A second MOSFET is opened and closed independent of the first MOSFET and extracts the first type majority carriers from the first conductive type base region. A third MOSFET has a first gate electrode which is also a gate electrode of the first MOSFET, for extracting the first type majority carriers from the first conductive type base region. First conductive type and second conductive type emitter regions are formed within the first conductive type base region and an emitter voltage can be simultaneously applied to these emitter regions. The first conductive type emitter region is formed within the second conductive type emitter region. A second gate electrode of the second MOSFET is formed on the surface of the first conductive type emitter region, the second conductive type emitter region and the first conductive type base region through a gate insulating film. The first gate electrode of the first and third MOSFET is formed on the surface of the first conductive type emitter region, the second conductive type emitter region, the first conductive type base region and the second conductive type base region through a gate insulating film.
摘要翻译：半导体器件晶闸管结构包括第一导电型集电极区域，第二导电型和第一导电型基极区域以及第二导电型发射极区域。第一导电类型区域和第二导电类型区域具有相应的第一和第二多数载流子。第一MOSFET将第二类型多数载流子注入第二导电型基极区域。独立于第一MOSFET的第二个MOSFET被打开和关闭，并从第一导电类型的基极区域提取出第一类型多数载流子。第三MOSFET具有第一栅极电极，其也是第一MOSFET的栅电极，用于从第一导电类型基极区域提取第一多数载流子。第一导电类型和第二导电型发射极区域形成在第一导电类型基极区域内，并且发射极电压可以同时施加到这些发射极区域。第一导电型发射极区域形成在第二导电型发射极区域内。通过栅极绝缘膜，在第一导电型发射极区域，第二导电型发射极区域和第一导电型基极区域的表面上形成第二MOSFET的第二栅电极。第一和第三MOSFET的第一栅极通过栅极绝缘膜形成在第一导电型发射极区域，第二导电型发射极区域，第一导电型基极区域和第二导电型基极区域的表面上。

2. 发明授权

US5561393A Control device of semiconductor power device 失效
标题翻译：半导体功率器件的控制装置
公开(公告)号：US5561393A
公开(公告)日：1996-10-01
申请号：US330126
申请日：1994-10-27
申请人： Ken'ya Sakurai , Masahito Otsuki , Noriho Terasawa , Tadashi Miyasaka , Akira Nishiura , Masaharu Nishiura
发明人： Ken'ya Sakurai , Masahito Otsuki , Noriho Terasawa , Tadashi Miyasaka , Akira Nishiura , Masaharu Nishiura
IPC分类号： H01L29/739 , H01L29/745 , H01L29/749 , H03K17/0812 , H03K17/082 , H03K17/567 , H01L29/74 , H03K17/72
CPC分类号： H03K17/567 , H01L29/7395 , H01L29/7455 , H01L29/749 , H03K17/08128 , H03K17/0828
摘要： A control device for controlling a double gate semiconductor device having a second gate electrode for controlling transition from a thyristor operation to a transistor operation, and a first gate electrode for controlling transition from transistor operation to an ON/OFF operation, and for controlling a current passing from a collector electrode to an emitter electrode, includes a first gate control circuit for delaying a turn-off signal to the double gate semiconductor device and applying the turn-off signal to the first gate electrode.
摘要翻译：一种用于控制具有用于控制从晶闸管操作到晶体管操作的转变的第二栅电极的双栅极半导体器件的控制装置，以及用于控制从晶体管操作到ON / OFF操作的转变的第一栅电极，以及用于控制电流从集电极至发射电极的通路包括：第一栅极控制电路，用于将关断信号延迟到双栅极半导体器件，并将关断信号施加到第一栅电极。

3. 发明授权

US5061800A Camptothecin derivatives 失效
标题翻译： CAMPTOTHECIN衍生物
公开(公告)号：US5061800A
公开(公告)日：1991-10-29
申请号：US298976
申请日：1989-01-19
申请人： Takashi Yaegashi , Satoru Okajima , Seigo Sawada , Kenichiro Nokata , Kenichi Tezuka , Hiroshi Nagata , Teruo Yokokura , Tadashi Miyasaka , Tadashi Miyasaka
发明人： Takashi Yaegashi , Satoru Okajima , Seigo Sawada , Kenichiro Nokata , Kenichi Tezuka , Hiroshi Nagata , Teruo Yokokura , Tadashi Miyasaka , Tadashi Miyasaka
IPC分类号： C07D491/147 , A61K31/47 , A61K31/475 , A61P35/00 , C07D491/22
CPC分类号： C07D491/22
摘要： New campotothecin derivatives and a process for preparing same are disclosed, which are represented by the general formula: ##STR1## wherein R.sup.1 represents a lower alkyl group, R.sup.2 represents a hydrogen atom or an amino, hydroxyl, lower acylamino or lower alkoxy group, R.sup.3 represents a hydrogen or halogen atom or a lower alkyl, hydroxyl, lower alkoxy, nitro, amino, cyano or di(lower alkyl)amino group, R.sup.4 represents a hydrogen or halogen atom or a lower alkyl, hydroxyl, lower alkoxy, lower alkylthio, amino, cyano or di(lower alkyl)amino group, and R.sup.5 represents a hydrogen or halogen atom or a hydroxyl or lower alkoxy group, with the proviso that all of the R.sup.2, R.sup.3, R.sup.4 and R.sup.5 substituents should not be a hydrogen atom and also that if any one of the R.sup.2, R.sup.3, R.sup.4 and R.sup.5 is a hydroxyl or lower alkoxy group, all of the other three substituents should not be a hydrogen atom.

4. 发明授权

US06914325B2 Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：US06914325B2
公开(公告)日：2005-07-05
申请号：US10621547
申请日：2003-07-18
申请人： Takatoshi Kobayashi , Tadashi Miyasaka , Katsumi Yamada , Akira Morozumi
发明人： Takatoshi Kobayashi , Tadashi Miyasaka , Katsumi Yamada , Akira Morozumi
IPC分类号： H01L23/12 , H01L23/373 , H01L25/07 , H01L25/18 , H02M7/00 , H01L23/02
CPC分类号： H01L24/32 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/162 , H01L25/18 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/0132 , H01L2924/014 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/01082 , H01L2224/45099 , H01L2224/05599
摘要： A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.
摘要翻译：功率半导体模块具有电路组件主体，其包括金属基底，陶瓷基板和功率半导体芯片，并且与具有一体形成的端子的封装组合。模块的陶瓷基板分别具有将上电路板和下板接合到陶瓷板的两侧的结构，并且使用焊料将金属基体和陶瓷基板彼此固定，从而提高可靠性并且通过优化陶瓷基板及其金属基底，其尺寸以及用于在陶瓷基板和金属基底之间形成的接合体的材料和方法来延长功率半导体模块的寿命。

5. 发明授权

US06690087B2 Power semiconductor module ceramic substrate with upper and lower plates attached to a metal base 有权
标题翻译：功率半导体模块陶瓷基板，上下板连接在金属基座上
公开(公告)号：US06690087B2
公开(公告)日：2004-02-10
申请号：US10028263
申请日：2001-12-28
申请人： Takatoshi Kobayashi , Tadashi Miyasaka , Katsumi Yamada , Akira Morozumi
发明人： Takatoshi Kobayashi , Tadashi Miyasaka , Katsumi Yamada , Akira Morozumi
IPC分类号： H01L2302
CPC分类号： H01L24/32 , H01L23/3735 , H01L24/48 , H01L24/49 , H01L25/072 , H01L25/162 , H01L25/18 , H01L2224/291 , H01L2224/29111 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/0132 , H01L2924/014 , H01L2924/13055 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/01082 , H01L2224/45099 , H01L2224/05599
摘要： A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.
摘要翻译：功率半导体模块具有电路组件主体，其包括金属基底，陶瓷基板和功率半导体芯片，并且与具有一体形成的端子的封装组合。模块的陶瓷基板分别具有将上电路板和下板接合到陶瓷板的两侧的结构，并且使用焊料将金属基体和陶瓷基板彼此固定，从而提高可靠性并且通过优化陶瓷基板及其金属基底，其尺寸以及用于在陶瓷基板和金属基底之间形成的接合体的材料和方法来延长功率半导体模块的寿命。

6. 发明授权

US5318972A Pyrimidine nucleoside derivative and antiviral agent containing the derivative as active ingredient 失效
标题翻译：嘧啶核苷衍生物和含有该衍生物作为活性成分的抗病毒剂
公开(公告)号：US5318972A
公开(公告)日：1994-06-07
申请号：US676912
申请日：1991-03-28
申请人： Tadashi Miyasaka , Hiromichi Tanaka , Erik D. A. De Clercq , Masanori Baba , Richard T. Walker , Masaru Ubasawa
发明人： Tadashi Miyasaka , Hiromichi Tanaka , Erik D. A. De Clercq , Masanori Baba , Richard T. Walker , Masaru Ubasawa
IPC分类号： C07D239/54 , C07D239/56 , C07D239/58 , C07D239/60 , A61K31/505 , C07D239/10
CPC分类号： C07D239/54 , C07D239/56 , C07D239/58 , C07D239/60
摘要： A pyrimidine nucleoside derivative and pharmaceutically acceptable salt thereof specified by the presence of ethyl group or isopropyl group at 5-position of the pyrimidine ring and the presence of a (substituted) phenylthio or a (substituted) benzyl group at 6-position of the pyrimidine ring is provided. The pyrimidine nucleoside derivative and pharmaceutically acceptable salt thereof show a markedly higher anti-retroviral activity than conventional analogous compounds and have a relatively low toxicity against the host cells, and therefore, are useful as an active ingredient of antiviral agent.
摘要翻译：嘧啶核苷衍生物及其药学上可接受的盐，其特征在于在嘧啶环的5-位存在乙基或异丙基，以及在嘧啶的6位存在（取代的）苯硫基或（取代的）苄基提供戒指。嘧啶核苷衍生物及其药学上可接受的盐显示比常规类似化合物显着更高的抗逆转录病毒活性，并且对宿主细胞具有相对低的毒性，因此可用作抗病毒剂的活性成分。

7. 发明授权

US5500619A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5500619A
公开(公告)日：1996-03-19
申请号：US121470
申请日：1993-09-16
申请人： Tadashi Miyasaka
发明人： Tadashi Miyasaka
IPC分类号： H03K17/0812 , H03K17/082 , H03K17/16 , H03K17/687
CPC分类号： H03K17/0822 , H03K17/08128 , H03K17/0828 , H03K17/163 , H03K17/168
摘要： A semiconductor device includes a main insulated gate type switching element having a gate electrode and controllable by a gate voltage applied to the gate electrode, a current detecting insulated gate type switching element connected in parallel to the main insulated gate type switching element, a detecting resistor for detecting a current flowing in the current detecting insulated gate type switching element, a gate controlling element capable of controlling the gate voltage by a drop voltage in the detecting resistor, and a gate control relieving element for relieving a varying speed of the gate voltage varied based on an operation of the gate controlling element.
摘要翻译：一种半导体器件包括：具有栅电极且可由施加到栅电极的栅极电压控制的主绝缘栅型开关元件，与主绝缘栅型开关元件并联连接的电流检测绝缘栅型开关元件，检测电阻器用于检测在电流检测绝缘栅型开关元件中流动的电流，能够通过检测电阻器中的下降电压来控制栅极电压的栅极控制元件和用于缓和栅极电压变化速度的栅极控制释放元件基于门控制元件的操作。

8. 发明授权

US5343098A Snubber circuit for a power semiconductor device 失效
标题翻译：用于功率半导体器件的缓冲电路
公开(公告)号：US5343098A
公开(公告)日：1994-08-30
申请号：US623347
申请日：1990-12-07
申请人： Tadashi Miyasaka
发明人： Tadashi Miyasaka
IPC分类号： H03K17/16 , H03K17/0814 , H03K17/73 , H03K17/60 , H03K5/00
CPC分类号： H03K17/08146
摘要： A snubber circuit, for absorbing voltage spikes applied to a power semiconductor device used as a switching means, utilizes the junction capacitance of a directly connected semiconductor device, thereby avoiding the need for a separate high-voltage capacitor. Embodiments shown use either a MOSFET or a bipolar transistor with a resistor connected in parallel between the gate (base) and the source (emitter) of the MOSFET (or bipolar transistor.) The snubber circuit of the present invention may also be a module integrally formed on a radiating base of the power semiconductor device.
摘要翻译：用于吸收施加到用作开关装置的功率半导体器件的电压尖峰的缓冲电路利用直接连接的半导体器件的结电容，从而避免需要单独的高压电容器。所示的实施例使用MOSFET或双极晶体管，其电阻器与栅极（基极）和MOSFET（或双极晶体管）的源极（发射极）并联连接。本发明的缓冲电路也可以是一体的模块形成在功率半导体器件的辐射基底上。

9. 发明授权

US5112835A 6-substituted acyclopyrimidine nucleoside derivatives and antiviral agents containing the same as active ingredient thereof 失效
标题翻译： 6-取代的环丙基嘧啶核苷衍生物和含有它的活性成分的抗病毒剂
公开(公告)号：US5112835A
公开(公告)日：1992-05-12
申请号：US449930
申请日：1989-11-21
申请人： Tadashi Miyasaka , Hiromichi Tanaka , Erik D. A. De Clercq , Masanori Baba , Richard T. Walker , Masaru Ubasawa
发明人： Tadashi Miyasaka , Hiromichi Tanaka , Erik D. A. De Clercq , Masanori Baba , Richard T. Walker , Masaru Ubasawa
IPC分类号： C07D239/54 , C07D239/60
CPC分类号： C07D239/54 , C07D239/60
摘要： 6-substitutted acyclopyrimidine nucleoside derivatives represented by the following general formula I: ##STR1## wherein R.sup.1 represents a hydrogen or halogen atom or a group of alkyl, alkenyl, alkynyl, alkylcarbonyl, arylcarbonyl, arylcarbonylalkyl, arylthio or aralkyl; R.sup.2 represents a group of arylthio, alkylthio, cycloalkylthio, aryl sulfoxide, alkyl sulfoxide, cycloalkyl sulfoxide, alkenyl, alkynyl, aralkyl, arylcarbonyl, arylcarbonylalkyl or aryloxy; R.sup.3 represents a hydroxyalkyl group of which alkyl portion may contain an oxygen atom; X represents an oxygen or sulfur atom or amino group; Y represents an oxygen or sulfur atom; and A represents .dbd.N-- or --NH-- or pharmaceutically acceptable salts thereof, processes for their preparation and antiviral agents containing them as active ingredients.
摘要翻译： PCT No.PCT / JP89 / 00347 Sec。 371日期：一九八九年十一月二十一日 102（e）1989年11月21日PCT PCT 1989年3月31日PCT公布。出版物WO89 / 09213 日期：1989年10月5日，由以下通式I表示的6-取代的阿卡吡啶核苷衍生物：其中R 1表示氢或卤原子或烷基，烯基，炔基，烷基羰基，芳基羰基，芳基羰基烷基，芳硫基或芳烷基 ; R2代表芳硫基，烷硫基，环烷硫基，芳基亚砜，烷基亚砜，环烷基亚砜，烯基，炔基，芳烷基，芳基羰基，芳基羰基烷基或芳氧基; R3表示烷基部分可含有氧原子的羟烷基; X表示氧或硫原子或氨基; Y表示氧或硫原子; 并且A表示= N-或-NH-或其药学上可接受的盐，其制备方法和含有它们作为活性成分的抗病毒剂。

10. 发明授权

US4746663A Pyrazolo[4,3-d]pyrimidine derivative, process for its production, and antihyperlipidemic or antiatherosclerotic agent containing it 失效
标题翻译：吡唑并[4,3-d]嘧啶衍生物，其制备方法和含有它的抗高脂血症或抗动脉粥样硬化剂
公开(公告)号：US4746663A
公开(公告)日：1988-05-24
申请号：US890549
申请日：1986-07-30
申请人： Yoshihiro Fujikawa , Mikio Suzuki , Mitsuaki Sakashita , Nobutomo Tsuruzoe , Tadashi Miyasaka
发明人： Yoshihiro Fujikawa , Mikio Suzuki , Mitsuaki Sakashita , Nobutomo Tsuruzoe , Tadashi Miyasaka
IPC分类号： A61K31/505 , A61P3/06 , C07D487/04 , A61K31/415
CPC分类号： C07D487/04
摘要： A pyrazolo[4,3-d]pyrimidine derivative having the formula: ##STR1## wherein R.sup.1 is lower alkyl or phenyl which is unsubstituted or substituted by lower alkyl, lower alkoxy or halogen; R.sup.2 is a saturated or unsaturated, straight chain or branched aliphatic group having from 2 to 22 carbon atoms or phenyl-lower alkyl with the phenyl group unsubstituted or substituted by lower alkyl, lower alkoxy or halogen; and A is an alkylene group having from 1 to 3 carbon atoms which is unsubstituted or substituted by methyl, or a pharmaceutically acceptable salt thereof.
摘要翻译：具有下式的吡唑并[4,3-d]嘧啶衍生物：其中R 1为低级烷基或未被取代或被低级烷基，低级烷氧基或卤素取代的苯基; R2是具有2至22个碳原子的饱和或不饱和的直链或支链脂族基团或苯基未被取代或被低级烷基，低级烷氧基或卤素取代的苯基 - 低级烷基; 并且A为未取代或被甲基取代的具有1至3个碳原子的亚烷基或其药学上可接受的盐。

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