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    • 8. 发明授权
    • Method for production of semiconductor device
    • 半导体器件的制造方法
    • US06306756B1
    • 2001-10-23
    • US09580922
    • 2000-05-26
    • Masahiko HasunumaSachiyo ItoKeizo ShimamuraHisashi KanekoNobuo HayasakaJunsei TsutsumiAkihiro KajitaJunichi WadaHaruo Okano
    • Masahiko HasunumaSachiyo ItoKeizo ShimamuraHisashi KanekoNobuo HayasakaJunsei TsutsumiAkihiro KajitaJunichi WadaHaruo Okano
    • H01L214763
    • H01L21/76882
    • A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches. The formation of the interconnection is also accomplished by forming a conductive film on the surface of a semiconducting substrate having trenches formed therein, exerting thereon uniaxial stress from above the semiconducting substrate, heat treating the formed conductive film thereby flowing the conductive film, to fill the trenches, and polishing the surface of the semiconducting substrate.
    • 公开了一种制造半导体器件的方法,该半导体器件具有形成在半导体衬底中的电极线,其包括制备半导体衬底,该半导体衬底具有在预定形成电极线的区域中预先形成的沟槽和/或接触孔,形成导电膜 主要是在半导体基板的表面上选自Cu,Ag和Au中的至少一个元件,在至少供给氧化气体的同时对叠加的Cu膜进行热处理,从而使Cu膜流动,从而不会熔化以填充 沟槽和/或接触孔,并且通过抛光导电膜的掉落在电极线的区域外部并且完成电极线的部分去除。 在热处理期间,除了氧化气体之外还提供还原气体以引起局部氧化还原反应,并使导电膜流通和/或流动,从而完成沟槽中导电膜的实施例。 互连的形成还可以通过在其上形成有沟槽的半导体衬底的表面上形成导电膜,在半导体衬底上方施加单轴应力,热处理形成的导电膜从而使导电膜流动,从而填充 沟槽,并抛光半导体衬底的表面。