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    • 6. 发明授权
    • Hybrid chip and method therefor
    • 混合芯片及其方法
    • US5858814A
    • 1999-01-12
    • US766214
    • 1996-12-12
    • Keith Wayne GoossenJames A. Walker
    • Keith Wayne GoossenJames A. Walker
    • H01L21/68H01L21/98H01L21/44
    • H01L21/6835H01L25/50H01L2221/68359H01L2221/68363H01L2224/16H01L2924/01078H01L2924/01079H01L2924/1305
    • A hybrid chip having at least two different types of semiconductor devices co-located on a common substrate, and a method therefor, are disclosed. The devices have different multiple epitaxial layer structures so that each different type of device is first grown on a separate appropriately-selected substrate, and then attached to the common substrate. According to the method, a first device is attached to the common substrate using flip-chip bonding methods. Flip-chip bonding involves attaching the device and the substrate at bonding pads, flowing a flowable hardener between the first device and the common substrate and allowing it to harden, and then removing the substrate upon which the first device was grown. The hardener is removed before attaching the second type of device via flip-chip bonding.
    • 公开了具有共同位于公共基板上的至少两种不同类型的半导体器件的混合芯片及其方法。 这些器件具有不同的多个外延层结构,使得每个不同类型的器件首先在单独的适当选择的衬底上生长,然后连接到公共衬底。 根据该方法,使用倒装芯片接合方法将第一器件附接到公共衬底。 倒装芯片粘合包括将装置和基板连接在接合焊盘处,使可流动的固化剂在第一装置和公共基板之间流动并允许其硬化,然后移除其上生长第一装置的基板。 在通过倒装芯片接合连接第二类型的器件之前去除硬化剂。
    • 7. 发明授权
    • Optical filter and method for linearization of optical power equalizer
    • 光功率均衡器线性化滤波器及方法
    • US06307691B1
    • 2001-10-23
    • US09369919
    • 1999-08-06
    • Keith Wayne Goossen
    • Keith Wayne Goossen
    • G02B522
    • G02B6/2937G02B5/281G02B6/29391G02B6/325H04B10/25073
    • An optical filter for correcting non-linear gains across a wavelength band includes a first layer having a first layer thickness according to the formula: first layer thickness=m&lgr;/(4nfirst), where m is an odd multiple integer, &lgr; is the central wavelength of the wavelength band, and nfirst is the refractive index of the first layer, and a second layer having a second layer thickness according to the formula: second layer thickness=&lgr;/(4nsecond), where &lgr; is the central wavelength of the wavelength band, and nsecond is the refractive index of the second layer. The optical filter introduces an insertion loss for wavelengths in a wavelength band of optical fiber transmission having an insertion loss curve approximating a quadratic shape in the wavelength band and having a maximum insertion loss at a central wavelength of the wavelength band.
    • 用于校正波长带的非线性增益的光学滤波器包括具有根据下式的第一层厚度的第一层:第一层厚度= mlambd /(4nfirst),其中m是奇数多个整数,lambd是中心波长 并且第一个是第一层的折射率,第二层具有根据下式的第二层厚度:第二层厚度= lambd /(4nsec),其中lambd是波长带的中心波长 ,nsec为第二层的折射率。 光滤波器对具有接近波长带中的二次形状的插入损耗曲线并且在波长带的中心波长处具有最大插入损耗的光纤传输波长带中的波长引入插入损耗。
    • 8. 发明授权
    • Wavelength demultiplexing stack photodiode detector with electrical isolation layers
    • 具有电隔离层的波长解复用堆叠光电二极管检测器
    • US06271943B1
    • 2001-08-07
    • US09049252
    • 1998-03-27
    • Keith Wayne Goossen
    • Keith Wayne Goossen
    • H04B1000
    • B82Y20/00H01L31/035236H01L31/101
    • A wavelength demultiplexer having at least two pairs of photodetectors is disclosed. The photodetectors are arranged in sequential layers along an optical path and the pairs of photodetectors are separated by a non-optically active insulator interposed between the pairs. The photodetectors differ in bandgap, and are arranged so that the optical signal passes through relatively larger bandgap photodetectors before being received by relatively smaller bandgap detectors. Each photodetector absorbs photons within a predetermined energy range and generates a voltage as a function of the absorbed energy. The photodetectors can be used to detect, and hence demultiplex, a wavelength-division-multiplexed signal.
    • 公开了具有至少两对光电检测器的波长解复用器。 光电检测器沿着光路布置成顺序层,并且成对的光电检测器被插入在对之间的非光学活性绝缘体分开。 光电检测器在带隙方面不同,并且被布置成使得光信号在被相对较小的带隙检测器接收之前通过相对较大的带隙光电检测器。 每个光电探测器在预定的能量范围内吸收光子并产生作为吸收能量的函数的电压。 光电探测器可用于检测波分复用信号,从而解复用波分复用信号。