专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5401981A Threshold switching device 失效
标题翻译：阈值切换装置
公开(公告)号：US5401981A
公开(公告)日：1995-03-28
申请号：US257991
申请日：1994-06-06
申请人： Keith W. Michael , Udo C. Pernisz
发明人： Keith W. Michael , Udo C. Pernisz
IPC分类号： H01L29/86 , G06N3/063 , H01L45/00 , H01L49/02 , H03K19/23
CPC分类号： H01L45/1608 , G06N3/063 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/145 , Y10T428/265 , Y10T428/31678
摘要： This invention relates to a threshold switching device which exhibits negative differential resistance, and which is made by depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.
摘要翻译：本发明涉及具有负的差分电阻的阈值开关器件，其通过在至少两个电极之间沉积衍生自氢倍半硅氧烷树脂的二氧化硅膜，然后在电极两端施加高于阈值电压的电压而制成。

2. 发明授权

US5312684A Threshold switching device 失效
标题翻译：阈值切换装置
公开(公告)号：US5312684A
公开(公告)日：1994-05-17
申请号：US694721
申请日：1991-05-02
申请人： Keith W. Michael , Udo C. Pernisz
发明人： Keith W. Michael , Udo C. Pernisz
IPC分类号： H01L29/86 , G06N3/063 , H01L45/00 , H01L49/02 , H03K19/23
CPC分类号： H01L45/1608 , G06N3/063 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/145 , Y10T428/265 , Y10T428/31678
摘要： This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.
摘要翻译：本发明涉及一种形成具有负差分电阻的阈值开关器件及其形成的器件的方法。该方法包括在至少两个电极之间沉积衍生自氢倍半硅氧烷树脂的二氧化硅膜，然后在电极两端施加高于阈值电压的电压。

3. 发明授权

US5635249A Luminescent ceramic coatings 失效
标题翻译：发光陶瓷涂层
公开(公告)号：US5635249A
公开(公告)日：1997-06-03
申请号：US346651
申请日：1994-11-30
申请人： Loren A. Haluska , Keith W. Michael , Udo C. Pernisz
发明人： Loren A. Haluska , Keith W. Michael , Udo C. Pernisz
IPC分类号： C01B33/12 , C03C17/00 , C03C17/34 , C04B41/50 , C04B41/87 , C09D183/04 , C09D183/05 , C09K11/02 , C14C11/00 , C23C18/12 , H01L23/58 , B05D3/02
CPC分类号： C04B41/87 , C03C17/007 , C03C17/009 , C03C17/3411 , C03C17/3417 , C03C17/3435 , C03C17/3441 , C04B41/009 , C04B41/5035 , C09D183/04 , C09K11/02 , C14C11/00 , C23C18/1208 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1279 , H01L23/573 , H01L23/58 , C03C2217/45 , C03C2217/465 , C03C2217/47 , C03C2217/475 , C03C2217/479 , C04B2111/00844 , C04B2111/80 , C04B2111/94 , H01L27/02 , H01L2924/0002
摘要： The present invention relates to a method of forming luminescent coatings on substrates and the substrates coated thereby. The method comprises applying a coating comprising hydrogen silsesquioxane resin and a phosphor filler on a substrate and heating the coated substrate at a temperature sufficient to convert the hydrogen silsesquioxane resin to a ceramic coating.
摘要翻译：本发明涉及在基材上形成发光涂层的方法以及由此涂覆的基材。该方法包括将包含氢倍半硅氧烷树脂和磷光体填料的涂层施加到基底上，并在足以将氢倍半硅氧烷树脂转化成陶瓷涂层的温度下加热涂覆的基底。

4. 发明授权

US5541248A Luminescent ceramic coating compositions 失效
标题翻译：发光陶瓷涂料组合物
公开(公告)号：US5541248A
公开(公告)日：1996-07-30
申请号：US459862
申请日：1995-06-02
申请人： Loren A. Haluska , Keith W. Michael , Udo C. Pernisz
发明人： Loren A. Haluska , Keith W. Michael , Udo C. Pernisz
IPC分类号： C01B33/12 , C03C17/00 , C03C17/34 , C04B41/50 , C04B41/87 , C09D183/04 , C09D183/05 , C09K11/02 , C14C11/00 , C23C18/12 , H01L23/58 , C08K3/30 , C08L83/05
CPC分类号： C04B41/87 , C03C17/007 , C03C17/009 , C03C17/3411 , C03C17/3417 , C03C17/3435 , C03C17/3441 , C04B41/009 , C04B41/5035 , C09D183/04 , C09K11/02 , C14C11/00 , C23C18/1208 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1279 , H01L23/573 , H01L23/58 , C03C2217/45 , C03C2217/465 , C03C2217/47 , C03C2217/475 , C03C2217/479 , C04B2111/00844 , C04B2111/80 , C04B2111/94 , H01L27/02 , H01L2924/0002
摘要： A coating composition comprising hydrogen silsesquioxane resin and a phosphor filler diluted in a solvent. These compositions are used to form luminescent coatings on substrates.
摘要翻译：一种包含氢倍半硅氧烷树脂和在溶剂中稀释的荧光体填料的涂料组合物。这些组合物用于在基底上形成发光涂层。

5. 发明授权

US5348773A Threshold switching device 失效
公开(公告)号：US5348773A
公开(公告)日：1994-09-20
申请号：US82112
申请日：1993-06-28
申请人： Keith W. Michael , Udo C. Pernisz
发明人： Keith W. Michael , Udo C. Pernisz
IPC分类号： H01L29/86 , G06N3/063 , H01L45/00 , H01L49/02 , B05D3/06 , B05D3/02 , B05D5/12
CPC分类号： H01L45/1608 , G06N3/063 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/145 , Y10T428/265 , Y10T428/31678
摘要： This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes.

6. 发明授权

US5339211A Variable capacitor 失效
标题翻译：可变电容器
公开(公告)号：US5339211A
公开(公告)日：1994-08-16
申请号：US966640
申请日：1992-10-26
申请人： Udo C. Pernisz , Keith W. Michael
发明人： Udo C. Pernisz , Keith W. Michael
IPC分类号： G06N3/063 , H01L45/00 , H01G7/00
CPC分类号： G06N3/063 , H01L45/04 , H01L45/1233 , H01L45/1608 , H01L27/2472
摘要： An electrical or electronic circuit having at least one variable capacitor device connected in parallel relationship in the circuit by at least a pair of electrodes. The improvement constitutes the capacitor device being in the form of a silicon dioxide film derived from the oxidation of a hydrogen silsequioxane resin. The silicon dioxide film is characterized by a non-linear substantially symmetrical jV curve which includes a threshold voltage at which the silicon dioxide film undergoes a reversible transition from insulating to conducting. The jV curve further includes a regime of negative differential resistance in which an increase in the voltage applied to the silicon dioxide film above the threshold voltage causes a decrease of the current.
摘要翻译：一种具有至少一个可变电容器件的电气或电子电路，该可变电容器装置通过至少一对电极在电路中并联连接。该改进构成电容器装置是源于氢硅氧烷树脂的氧化的二氧化硅膜的形式。二氧化硅膜的特征在于非线性基本对称的jV曲线，其包括阈值电压，在该阈值电压下，二氧化硅膜经历从绝缘到导通的可逆转变。 jV曲线还包括负微分电阻的状态，其中施加到二氧化硅膜上的电压的增加高于阈值电压导致电流的降低。

7. 发明授权

US5293335A Ceramic thin film memory device 失效
标题翻译：陶瓷薄膜记忆装置
公开(公告)号：US5293335A
公开(公告)日：1994-03-08
申请号：US988046
申请日：1992-12-09
申请人： Udo C. Pernisz , Keith W. Michael , Loren A. Haluska
发明人： Udo C. Pernisz , Keith W. Michael , Loren A. Haluska
IPC分类号： H01L29/86 , G06N3/063 , H01L45/00 , H01L49/02 , G11C11/56
CPC分类号： H01L45/1608 , G06N3/063 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/145 , Y10T428/265 , Y10T428/31678
摘要： A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the digital memory circuit is in the form of a silicon dioxide film derived from a hydrogen silsesquioxane resin. The silicon dioxide film is characterized by a jV curve which includes both resistive and conductive regions for the memory element.
摘要翻译：一种用于电子应用的数字存储电路。电路具有与负载电阻串联连接的至少一个存储元件。数字存储电路还包括电压源和数据输出端。数字存储电路中的存储元件是由氢倍半硅氧烷树脂衍生的二氧化硅膜的形式。二氧化硅膜的特征在于包括存储元件的电阻和导电区域的jV曲线。

8. 发明授权

US5711987A Electronic coatings 失效
标题翻译：电子涂料
公开(公告)号：US5711987A
公开(公告)日：1998-01-27
申请号：US725787
申请日：1996-10-04
申请人： Clayton R. Bearinger , Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
发明人： Clayton R. Bearinger , Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
IPC分类号： B05D7/00 , B05D7/24 , B32B9/00 , H01L21/312 , H01L23/29 , H01L23/31 , H01L23/58 , B05D5/12
CPC分类号： H01L23/573 , H01L23/296 , H01L23/3192 , H01L2924/0002 , Y10S257/922
摘要： The instant invention pertains to a multi-layer tamper proof electronic coating wherein the first layer is a protecting layer produced from preceramic silicon containing material and at least one filler. The second layer is a resin sealer coat produced from a sealer resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides and parylenes. An optional third layer is a cap coating layer selected from SiO.sub.2 coating, SiO.sub.2 /ceramic oxide coating, silicon containing coatings, silicon carbon containing coatings, silicon nitrogen containing coatings, silicon oxygen nitrogen coatings, silicon nitrogen carbon containing coatings and/or diamond like coatings. An optional fourth layer is a resin overcoat produced from an overcoat resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides, parylenes, photoresist polymers, siloxane room temperature vulcanizable compositions, or other organic polymer. The use of the multi-layer coating on the electronic device results in an electronic device that is resistant to analytical techniques such as ozone, UV-ozone, gaseous free radicals and ions, vapor or liquid borne reactive species, plasma, abrasion, radiation, light, wet etching and others; moisture; chemicals and other environmental contaminants; shock and erosion, delamination and/or separation.
摘要翻译：本发明涉及多层防篡改电子涂层，其中第一层是由含陶瓷硅材料和至少一种填料制成的保护层。第二层是由选自胶体无机基硅氧烷树脂，苯并环丁烯基树脂，聚酰亚胺聚合物，硅氧烷聚酰亚胺和对二甲苯基的密封树脂制成的树脂密封剂涂层。可选的第三层是选自SiO 2涂层，SiO 2 /陶瓷氧化物涂层，含硅涂层，含硅碳涂层，含硅氮涂层，硅氧氮涂层，含氮氮碳涂层和/或金刚石类涂层的覆盖层。任选的第四层是由选自胶体无机基硅氧烷树脂，苯并环丁烯基树脂，聚酰亚胺聚合物，硅氧烷聚酰亚胺，对二甲苯基，光致抗蚀剂聚合物，硅氧烷室温可硫化组合物或其它有机物的外涂层树脂生产的树脂外涂层聚合物。在电子设备上使用多层涂层导致电子装置耐分析技术如臭氧，紫外线臭氧，气态自由基和离子，蒸汽或液体反应物质，等离子体，磨损，辐射，光，湿蚀等; 湿气; 化学品和其他环境污染物; 冲击和侵蚀，分层和/或分离。

9. 发明授权

US5616202A Enhanced adhesion of H-resin derived silica to gold 失效
标题翻译：增强H型树脂衍生二氧化硅对金的附着力
公开(公告)号：US5616202A
公开(公告)日：1997-04-01
申请号：US494746
申请日：1995-06-26
申请人： Robert C. Camilletti , Grish Chandra , Keith W. Michael
发明人： Robert C. Camilletti , Grish Chandra , Keith W. Michael
IPC分类号： B32B9/00 , B32B15/04 , C04B37/02 , C23C18/12 , C23C26/00 , B32B31/26 , B05D5/12
CPC分类号： C23C26/00 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1241 , C23C18/1279 , C23C18/1295 , Y10T29/49128 , Y10T29/49155 , Y10T29/49163
摘要： Disclosed is a method of increasing the adhesion between gold and silica derived from hydrogen silsesquioxane resin. The method comprises joining the gold and silica followed by annealing under an oxidizing atmosphere.
摘要翻译：公开了提高由氢倍半硅氧烷树脂衍生的金和二氧化硅之间的粘附性的方法。该方法包括将金和二氧化硅接合，然后在氧化气氛下进行退火。

10. 发明授权

US5320868A Method of forming SI-O containing coatings 失效
标题翻译：形成含SI-O涂层的方法
公开(公告)号：US5320868A
公开(公告)日：1994-06-14
申请号：US119634
申请日：1993-09-13
申请人： David S. Ballance , Keith W. Michael
发明人： David S. Ballance , Keith W. Michael
IPC分类号： C04B41/84 , C01B33/12 , C04B35/622 , C08G77/12 , C09D183/04 , C23C18/12 , H01L21/312 , H01L21/316 , B05D3/02
CPC分类号： C09D183/04 , C04B35/62222 , C08G77/12 , C23C18/1208 , C23C18/1212 , C23C18/122 , C23C18/1279
摘要： Disclosed is a method for forming improved Si--O containing coatings on electronic substrate. The method comprises converting hydrogen silsesquioxane resin into a Si--O containing ceramic coating in the presence of hydrogen gas. The resultant coatings have improved properties such as stable dielectric constants.
摘要翻译：公开了一种在电子基板上形成改进的含Si-O的涂层的方法。该方法包括在氢气存在下将氢倍半硅氧烷树脂转化成含Si-O的陶瓷涂层。所得到的涂层具有改进的性能，例如稳定的介电常数。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式