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1. 发明授权

US5616202A Enhanced adhesion of H-resin derived silica to gold 失效
标题翻译：增强H型树脂衍生二氧化硅对金的附着力
公开(公告)号：US5616202A
公开(公告)日：1997-04-01
申请号：US494746
申请日：1995-06-26
申请人： Robert C. Camilletti , Grish Chandra , Keith W. Michael
发明人： Robert C. Camilletti , Grish Chandra , Keith W. Michael
IPC分类号： B32B9/00 , B32B15/04 , C04B37/02 , C23C18/12 , C23C26/00 , B32B31/26 , B05D5/12
CPC分类号： C23C26/00 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1241 , C23C18/1279 , C23C18/1295 , Y10T29/49128 , Y10T29/49155 , Y10T29/49163
摘要： Disclosed is a method of increasing the adhesion between gold and silica derived from hydrogen silsesquioxane resin. The method comprises joining the gold and silica followed by annealing under an oxidizing atmosphere.
摘要翻译：公开了提高由氢倍半硅氧烷树脂衍生的金和二氧化硅之间的粘附性的方法。该方法包括将金和二氧化硅接合，然后在氧化气氛下进行退火。

2. 发明授权

US5516596A Method of forming a composite, article and composition 失效
标题翻译：形成复合材料，制品和组合物的方法
公开(公告)号：US5516596A
公开(公告)日：1996-05-14
申请号：US358292
申请日：1994-12-19
申请人： Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
发明人： Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
IPC分类号： C01B33/00 , C04B41/45 , C04B41/50 , C04B41/81 , C04B41/87 , H01L21/31 , H01L21/312 , H01L21/316 , H01L21/56 , H01L23/29 , H01L23/31 , B32B9/00
CPC分类号： C04B41/009 , C04B41/4554 , C04B41/5027 , C04B41/81 , C04B41/87 , H01L21/56 , H01L23/291 , H01L23/3171 , C04B2111/00844 , H01L2924/0002
摘要： The present invention relates to a method of forming composite coatings on electronic substrates and the substrates coated thereby. The method comprises applying a coating comprising hydrogen silsesquioxane resin and a refractory fiber on an electronic substrate and heating the coated substrate at a temperature sufficient to convert the hydrogen silsesquioxane resin into a ceramic.
摘要翻译：本发明涉及在电子基板上形成复合涂层的方法以及由此涂覆的基板。该方法包括将包含氢倍半硅氧烷树脂和耐火纤维的涂层涂覆在电子基板上，并在足以将氢倍半硅氧烷树脂转化成陶瓷的温度下加热涂覆的基材。

3. 发明授权

US5458912A Tamper-proof electronic coatings 失效
标题翻译：防篡改电子涂料
公开(公告)号：US5458912A
公开(公告)日：1995-10-17
申请号：US103142
申请日：1993-08-09
申请人： Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
发明人： Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
IPC分类号： C01B33/12 , C03C17/00 , C03C17/34 , C04B41/50 , C04B41/87 , C09D183/04 , C09D183/05 , C09K11/02 , C14C11/00 , C23C18/12 , H01L23/58 , B05D3/02 , C06B45/10
CPC分类号： C04B41/87 , C03C17/007 , C03C17/009 , C03C17/3411 , C03C17/3417 , C03C17/3435 , C03C17/3441 , C04B41/009 , C04B41/5035 , C09D183/04 , C09K11/02 , C14C11/00 , C23C18/1208 , C23C18/1212 , C23C18/122 , C23C18/1225 , C23C18/127 , C23C18/1279 , H01L23/573 , H01L23/58 , C03C2217/45 , C03C2217/465 , C03C2217/47 , C03C2217/475 , C03C2217/479 , C04B2111/00844 , C04B2111/80 , C04B2111/94 , H01L27/02 , H01L2924/0002
摘要： Disclosed is a method of forming tamper-proof coatings on electronic devices. The method comprises applying a coating of a silica precursor resin and a filler onto the electronic device, wherein the filler is one which reacts in an oxidizing atmosphere to liberate enough heat to damage the electronic device. The coated electronic device is then heated at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.
摘要翻译：公开了一种在电子设备上形成防篡改涂层的方法。该方法包括将二氧化硅前体树脂和填料的涂层涂覆到电子器件上，其中填充物是在氧化气氛中反应以释放足够的热量以损坏电子器件的填料。然后将涂覆的电子器件在足以将二氧化硅前体树脂转化为含二氧化硅的陶瓷基体的温度下加热。

4. 发明授权

US5711987A Electronic coatings 失效
标题翻译：电子涂料
公开(公告)号：US5711987A
公开(公告)日：1998-01-27
申请号：US725787
申请日：1996-10-04
申请人： Clayton R. Bearinger , Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
发明人： Clayton R. Bearinger , Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
IPC分类号： B05D7/00 , B05D7/24 , B32B9/00 , H01L21/312 , H01L23/29 , H01L23/31 , H01L23/58 , B05D5/12
CPC分类号： H01L23/573 , H01L23/296 , H01L23/3192 , H01L2924/0002 , Y10S257/922
摘要： The instant invention pertains to a multi-layer tamper proof electronic coating wherein the first layer is a protecting layer produced from preceramic silicon containing material and at least one filler. The second layer is a resin sealer coat produced from a sealer resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides and parylenes. An optional third layer is a cap coating layer selected from SiO.sub.2 coating, SiO.sub.2 /ceramic oxide coating, silicon containing coatings, silicon carbon containing coatings, silicon nitrogen containing coatings, silicon oxygen nitrogen coatings, silicon nitrogen carbon containing coatings and/or diamond like coatings. An optional fourth layer is a resin overcoat produced from an overcoat resin selected from the group consisting of colloidal inorganic-based siloxane resins, benzocyclobutene based resins, polyimide polymers, siloxane polyimides, parylenes, photoresist polymers, siloxane room temperature vulcanizable compositions, or other organic polymer. The use of the multi-layer coating on the electronic device results in an electronic device that is resistant to analytical techniques such as ozone, UV-ozone, gaseous free radicals and ions, vapor or liquid borne reactive species, plasma, abrasion, radiation, light, wet etching and others; moisture; chemicals and other environmental contaminants; shock and erosion, delamination and/or separation.
摘要翻译：本发明涉及多层防篡改电子涂层，其中第一层是由含陶瓷硅材料和至少一种填料制成的保护层。第二层是由选自胶体无机基硅氧烷树脂，苯并环丁烯基树脂，聚酰亚胺聚合物，硅氧烷聚酰亚胺和对二甲苯基的密封树脂制成的树脂密封剂涂层。可选的第三层是选自SiO 2涂层，SiO 2 /陶瓷氧化物涂层，含硅涂层，含硅碳涂层，含硅氮涂层，硅氧氮涂层，含氮氮碳涂层和/或金刚石类涂层的覆盖层。任选的第四层是由选自胶体无机基硅氧烷树脂，苯并环丁烯基树脂，聚酰亚胺聚合物，硅氧烷聚酰亚胺，对二甲苯基，光致抗蚀剂聚合物，硅氧烷室温可硫化组合物或其它有机物的外涂层树脂生产的树脂外涂层聚合物。在电子设备上使用多层涂层导致电子装置耐分析技术如臭氧，紫外线臭氧，气态自由基和离子，蒸汽或液体反应物质，等离子体，磨损，辐射，光，湿蚀等; 湿气; 化学品和其他环境污染物; 冲击和侵蚀，分层和/或分离。

5. 发明授权

US5611884A Flip chip silicone pressure sensitive conductive adhesive 失效
标题翻译：倒装硅胶压敏导电胶
公开(公告)号：US5611884A
公开(公告)日：1997-03-18
申请号：US570030
申请日：1995-12-11
申请人： Clayton R. Bearinger , Robert C. Camilletti , Jack S. Kilby , Loren A. Haluska , Keith W. Michael
发明人： Clayton R. Bearinger , Robert C. Camilletti , Jack S. Kilby , Loren A. Haluska , Keith W. Michael
IPC分类号： C09J9/02 , C09J183/00 , C09J183/04 , H01L21/60 , H05K3/32 , C09J4/00
CPC分类号： H01L24/81 , C09J183/04 , H01L2224/13111 , H01L2224/16225 , H01L2224/16235 , H01L2224/29076 , H01L2224/29083 , H01L2224/2919 , H01L2224/29191 , H01L2224/29291 , H01L2224/29311 , H01L2224/29316 , H01L2224/29344 , H01L2224/29388 , H01L2224/29439 , H01L2224/29444 , H01L2224/29447 , H01L2224/29455 , H01L2224/81193 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H05K3/321 , Y10T428/2857 , Y10T428/31663
摘要： A method and composition for joining flip chips back-side-up with respect to substrates by applying an adhesive between the active side of the flip chip and the substrate. The adhesive is a conductive silicone pressure sensitive adhesive containing (i) a silicone resin, (ii) a siloxane gum, (iii) a conductive particulate material, and optionally, (iv) a peroxide catalyst. Suitable conductive particulate materials are silver-clad glass fibers; spherical gold particles; spherical hollow glass microspheres coated with silver, gold, nickel, or copper; or spherical particles of metal alloys of Sn/Cu, Pb/Sn, or Au/Sn. The adhesive can be applied as a ball or bump itself, in conjunction with a solder ball or bump, or in the form of tape sandwiched between the flip chip and substrate.
摘要翻译：一种用于通过在倒装芯片的有源侧和衬底之间施加粘合剂将倒装芯片相对于衬底相反地接合的方法和组合物。粘合剂是含有（i）硅树脂，（ii）硅氧烷胶，（iii）导电颗粒材料和任选地（iv）过氧化物催化剂）的导电硅氧烷压敏粘合剂。合适的导电颗粒材料是银包覆玻璃纤维; 球形金颗粒; 用银，金，镍或铜涂覆的球形中空玻璃微球; 或Sn / Cu，Pb / Sn或Au / Sn的金属合金的球形颗粒。粘合剂可以作为球或凸块本身与焊球或凸块结合使用，或者以夹在倒装芯片和衬底之间的带的形式施加。

6. 发明授权

US5399441A Method of applying opaque coatings 失效
标题翻译：应用不透明涂料的方法
公开(公告)号：US5399441A
公开(公告)日：1995-03-21
申请号：US226585
申请日：1994-04-12
申请人： Clayton R. Bearinger , Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
发明人： Clayton R. Bearinger , Robert C. Camilletti , Loren A. Haluska , Keith W. Michael
IPC分类号： B05D1/32 , B05D3/02 , B05D7/24 , C04B41/50 , H01L21/316 , H01L23/29 , H01L23/31 , H01L23/552 , H01L23/58 , B32B9/00 , B32B19/00
CPC分类号： H01L23/573 , C04B41/5035 , H01L21/316 , H01L23/552 , C04B2111/00258 , C04B2111/00844 , C04B2111/80 , H01L2924/0002
摘要： Disclosed is a method of forming opaque coatings on integrated circuits. The method comprises selectively applying a coating of a silica precursor resin and a filler onto the integrated circuit and heating the coated circuit at a temperature sufficient to convert the silica precursor resin to a silica containing ceramic matrix.
摘要翻译：公开了在集成电路上形成不透明涂层的方法。该方法包括选择性地将二氧化硅前体树脂和填料的涂层施加到集成电路上并在足以将二氧化硅前体树脂转化为含二氧化硅的陶瓷基体的温度下加热涂覆的电路。

7. 发明授权

US5547703A Method of forming si-o containing coatings 失效
标题翻译：形成含Si涂层的方法
公开(公告)号：US5547703A
公开(公告)日：1996-08-20
申请号：US225688
申请日：1994-04-11
申请人： Robert C. Camilletti , Fredric C. Dall , Diana K. Dunn
发明人： Robert C. Camilletti , Fredric C. Dall , Diana K. Dunn
IPC分类号： H01L23/29 , H01L21/316 , H01L21/56 , H01L23/31 , H01L23/532 , B05P5/12
CPC分类号： H01L21/02134 , H01L21/02282 , H01L21/02337 , H01L21/316 , H01L21/31695 , H01L21/56 , H01L23/3171 , H01L23/5329 , H01L2924/0002 , H01L2924/19041
摘要： Disclosed is a method for forming improved Si-O containing coatings on electronic substrates. The method comprises heating a hydrogen silsesquioxane resin successively under wet ammonia, dry ammonia and oxygen. The resultant coatings have improved properties such as low dielectric constants.
摘要翻译：公开了一种在电子基板上形成改进的含Si-O的涂层的方法。该方法包括在湿氨，干氨和氧气下连续加热氢倍半硅氧烷树脂。所得涂层具有改进的性能，例如低介电常数。

8. 发明授权

US5609925A Curing hydrogen silsesquioxane resin with an electron beam 失效
标题翻译：用电子束固化氢倍半硅氧烷树脂
公开(公告)号：US5609925A
公开(公告)日：1997-03-11
申请号：US566820
申请日：1995-12-04
申请人： Robert C. Camilletti , Irfan Saadat , Michael Thomas
发明人： Robert C. Camilletti , Irfan Saadat , Michael Thomas
IPC分类号： C04B41/87 , B05D3/06 , C01B33/12 , C04B41/00 , C04B41/50 , C09D183/04 , H01L21/312
CPC分类号： H01L21/02134 , B05D3/068 , C04B41/0045 , C04B41/5035 , C09D183/04 , H01L21/02282 , H01L21/02351 , H01L21/3124 , C04B2111/00844
摘要： A low temperature method of forming silica-containing ceramic coatings on substrates in which a coating containing hydrogen silsesquioxane resin is applied on a substrate and exposed to an electron beam for a time sufficient to convert the hydrogen silsesquioxane resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.
摘要翻译：在基材上形成含二氧化硅的陶瓷涂层的低温方法，其中将含有氢倍半硅氧烷树脂的涂层施加在基材上并暴露于电子束足以将氢倍半硅氧烷树脂转化为含二氧化硅的陶瓷涂层的时间。该方法对于在电子器件上形成保护性和电介质涂层特别有价值。

9. 发明授权

US5145723A Process for coating a substrate with silica 失效
标题翻译：用二氧化硅涂覆基材的方法
公开(公告)号：US5145723A
公开(公告)日：1992-09-08
申请号：US710627
申请日：1991-06-05
申请人： David S. Ballance , Robert C. Camilletti , Theresa E. Gentle
发明人： David S. Ballance , Robert C. Camilletti , Theresa E. Gentle
IPC分类号： B05D3/02 , B05D7/24 , C04B41/50 , C23C18/12 , H01L21/312 , H01L21/316
CPC分类号： H01L21/316 , C04B41/5035 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1279 , H01L21/02134 , H01L21/02282 , H01L21/02337 , H01L21/3124
摘要： To form a coating of silica on a substrate, the substrate is coated with a silica precursor having a melting point between about 50.degree. and about 450.degree. C. The coating is heated to a temperature above its melting point in an inert environment to allow the coating to melt and flow. The melted coating is then heated in an environment which facilitates conversion to silica for a time sufficient to convert it to silica.
摘要翻译：为了在基材上形成二氧化硅涂层，基材上涂有熔点在约50℃和约450℃之间的二氧化硅前体。将涂层在惰性环境中加热至高于其熔点的温度，以使涂层熔化和流动。然后将熔融的涂层在有利于将二氧化硅转化为足以将其转化为二氧化硅的时间的环境中加热。

10. 发明授权

US5523163A Low dielectric constant coatings 失效
标题翻译：低介电常数涂层
公开(公告)号：US5523163A
公开(公告)日：1996-06-04
申请号：US402428
申请日：1995-03-10
申请人： David S. Ballance , Robert C. Camilletti , Diana K. Dunn
发明人： David S. Ballance , Robert C. Camilletti , Diana K. Dunn
IPC分类号： C01B33/113 , C01B33/00 , C04B35/04 , H01L21/3105 , H01L21/316 , B32B18/00
CPC分类号： H01L21/316 , H01L21/02134 , H01L21/02282 , H01L21/02337 , H01L21/31058 , Y10T428/31663
摘要： Disclosed are Si--O containing ceramics having a dielectric constant less than or equal to about 3.2 which is stable over time. These properties render the ceramics valuable on electronic substrates.
摘要翻译：公开了介电常数小于或等于3.2的含Si-O的陶瓷，其随时间稳定。这些性质使陶瓷在电子基板上有价值。

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