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1. 发明申请

US20150147709A1 HEAT TREATMENT METHOD, HEAT-TREATING FURNACE, AND HEAT TREATMENT SYSTEM 有权
标题翻译：热处理方法，热处理炉和热处理系统
公开(公告)号：US20150147709A1
公开(公告)日：2015-05-28
申请号：US14405975
申请日：2013-06-04
申请人： Keisuke Isomura , Shinya Mizuno , Noriyuki Ueno , Takehito Kobayashi
发明人： Keisuke Isomura , Shinya Mizuno , Noriyuki Ueno , Takehito Kobayashi
IPC分类号： B09B3/00 , F27D21/04 , F27B17/00 , F27D7/02
CPC分类号： B09B3/0091 , B09B3/0083 , F27B17/00 , F27B17/0016 , F27D7/02 , F27D21/04
摘要： A work is subjected to a heat treatment in a heat-treating furnace. First, the work is carried into the heat-treating furnace. The work in the heat-treating furnace is immersed in a heat source solvent. In the heat-treating furnace, a superheated steam atmosphere is formed. The work is exposed in the heat-treating furnace under the superheated steam atmosphere. Then, the work is carried out of the heat-treating furnace.
摘要翻译：工件在热处理炉中进行热处理。首先，将工件运送到热处理炉中。将热处理炉中的工作浸入热源溶剂中。在热处理炉中，形成过热蒸汽气氛。工作在过热蒸汽气氛下在热处理炉中暴露。然后，由热处理炉进行加工。

2. 发明授权

US09498807B2 Heat treatment method, heat-treating furnace, and heat treatment system 有权
标题翻译：热处理方法，热处理炉和热处理系统
公开(公告)号：US09498807B2
公开(公告)日：2016-11-22
申请号：US14405975
申请日：2013-06-04
申请人： Keisuke Isomura , Shinya Mizuno , Noriyuki Ueno , Takehito Kobayashi
发明人： Keisuke Isomura , Shinya Mizuno , Noriyuki Ueno , Takehito Kobayashi
IPC分类号： H01M10/54 , B09B3/00 , F27B17/00 , F27D7/02 , F27D21/04
CPC分类号： B09B3/0091 , B09B3/0083 , F27B17/00 , F27B17/0016 , F27D7/02 , F27D21/04
摘要： A work is subjected to a heat treatment in a heat-treating furnace. First, the work is carried into the heat-treating furnace. The work in the heat-treating furnace is immersed in a heat source solvent. In the heat-treating furnace, a superheated steam atmosphere is formed. The work is exposed in the heat-treating furnace under the superheated steam atmosphere. Then, the work is carried out of the heat-treating furnace.
摘要翻译：工件在热处理炉中进行热处理。首先，将工件运送到热处理炉中。将热处理炉中的工作浸入热源溶剂中。在热处理炉中，形成过热蒸汽气氛。工作在过热蒸汽气氛下在热处理炉中暴露。然后，由热处理炉进行加工。

3. 发明授权

US5202088A Ferritic heat-resisting cast steel and a process for making the same 失效
标题翻译：复合耐热铸钢及其制造方法
公开(公告)号：US5202088A
公开(公告)日：1993-04-13
申请号：US813697
申请日：1991-12-27
申请人： Yoshikazu Genma , Shinji Katou , Masami Suzuki , Shinya Mizuno , Tsutomu Sekiguchi
发明人： Yoshikazu Genma , Shinji Katou , Masami Suzuki , Shinya Mizuno , Tsutomu Sekiguchi
IPC分类号： C21D6/00 , C22C38/00 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/48
CPC分类号： C22C38/24 , C22C38/22 , C22C38/26
摘要： Ferritic heat-resisting cast steel, which intends to highten the applicability for use of the exhaust manifold of a vehicle engine without losing oxidation resistance, machinability and structural stability, containing, on a weight basis, 0.05 to 0.5% C, 1.0 to 2.0% Si, less than 0.6% Mn, less than 0.04% P, less than 0.04% S, less than 0.5% Ni, 10 to 20% Cr, 0.1 to 1.0% V, 0.5 to 1.0% Nb, 0.08 to 0.50% Mo, less than 0.01% W and 0.01 to 0.2% Ce, the balance of its composition being iron. Alternatively, it may contain 0.1 to 1.5% Mn and 0.01 to 0.2% S, and may further contain 0.01 to 0.2% Te and/or 0.01 to 0.3% Al. Further, it may contain 0.1 to 5.0% Co and/or 0.1 to 5.0% Ti. The cast steel is annealed at a temperature of 850.degree. C. to 1000.degree. C. for one to five hours.

4. 发明申请

US20100108285A1 DEVICE FOR LOW-PRESSURE CASTING, A METHOD FOR FILLING INERT GAS IN THE DEVICE, AND METHOD FOR PRODUCING A CAST 有权
标题翻译：用于低压铸造的装置，用于在装置中填充惰性气体的方法，以及用于生产铸件的方法
公开(公告)号：US20100108285A1
公开(公告)日：2010-05-06
申请号：US12596112
申请日：2008-04-08
申请人： Shinya Mizuno , Yutaka Murata
发明人： Shinya Mizuno , Yutaka Murata
IPC分类号： B22D46/00 , B22D2/00 , B22C9/00 , B22D18/04 , B22D25/00
CPC分类号： B22D18/04 , B22D18/08
摘要： The object of the present invention is to provide a device for low-pressure casting wherein the stalk or the guiding hole is filled with inert gas by causing the space formed over the molten metal in the pressurizing room to communicate with the stalk or the guiding hole. The device for low-pressure casting (100) wherein molten metal is supplied into a mold through a stalk (8) suspended from a gate for pouring of the mold (7) or through a guiding hole connected to the gate for pouring at one end by pressurizing the molten metal by inert gas, the device comprising: a room for holding molten metal (1); a pressurizing room (2) to be in communication with the room for holding molten metal through a hole for communication (4), wherein a bottom end of the stalk (8) enters the pressurizing room or another end of the guiding hole is connected to the pressurizing room, and wherein the molten metal is pressurized by inert gas; an on-off valve (5) for opening and shutting the hole for communication; a sensing means (15) for sensing that the space over the molten metal in the pressurizing room communicates with the stalk or the guiding hole; and a means (30) for supplying inert gas to an upper part of the pressurizing room.
摘要翻译：本发明的目的是提供一种用于低压铸造的装置，其中通过使形成在加压室内的熔融金属上形成的空间与杆或引导孔连通而使惰性气体填充在杆或引导孔中。用于低压铸造的装置（100），其中熔融金属通过悬挂在浇口（7）上的浇口的浇口（8）供给到模具中，或通过连接到浇口的导向孔（一端浇注）通过惰性气体对熔融金属加压，该装置包括：用于保持熔融金属（1）的空间; 与用于保持熔融金属的房间连通的加压室（2）通过孔（4），其中，所述杆（8）的底端进入所述加压室或所述引导孔的另一端连接到加压室，并且其中所述熔融金属由惰性气体加压; 用于打开和关闭用于连通的孔的开关阀（5）; 感测装置（15），用于感测加压室中的熔融金属上的空间与杆或引导孔连通; 以及用于向加压室的上部供给惰性气体的装置（30）。

5. 发明授权

US06380953B1 Method of display scrolling along a timebase and an apparatus for performing the method 有权
标题翻译：显示器沿时基滚动的方法和用于执行该方法的装置
公开(公告)号：US06380953B1
公开(公告)日：2002-04-30
申请号：US09179424
申请日：1998-10-27
申请人： Shinya Mizuno
发明人： Shinya Mizuno
IPC分类号： G06F314
CPC分类号： G06F3/04855 , G06Q10/109 , Y10S715/963
摘要： This invention has a scroll means for displaying GUI operation members consisting of calendar information on the computer screen, and moving the screen display field to a date position containing information corresponding to the date of the operated GUI operation member upon operation of one of the GUI operation members. The user can very easily see the information compared to a conventional scroll bar display, and can quickly observe corresponding information by only operating the GUI operation member of his or her desired date.
摘要翻译：本发明具有滚动装置，用于在计算机屏幕上显示由日历信息组成的GUI操作构件，并且在操作GUI操作之一时将屏幕显示区域移动到包含对应于所操作的GUI操作构件的日期的信息的日期位置会员用户可以非常容易地看到与常规滚动条显示相比的信息，并且可以通过仅操作他或她所期望的日期的GUI操作成员来快速观察相应的信息。

6. 发明申请

US20120247266A1 SLIDE HANDLER 审中-公开
标题翻译：幻灯片处理器
公开(公告)号：US20120247266A1
公开(公告)日：2012-10-04
申请号：US13511426
申请日：2010-12-06
申请人： Nao Takagi , Shinya Mizuno
发明人： Nao Takagi , Shinya Mizuno
IPC分类号： G05G1/00
CPC分类号： G05G1/02 , H01H15/10 , Y10T74/20762
摘要： A slide handler 1 mounted on a top end side of a handle lever 5 of which a base end side is attached to a slider 9 of an operated portion has a handler body 2 that has a lever reception portion 7 in which the handler lever 5 is received, a mount attachment 3 that has a lever locking portion 21 relatively fitted and mounted in the lever reception portion 7 in a state that the lever locking portion 21 is locked on the handle lever 5 and that has a hook portion 22 hooked in the lever reception portion 7 in a state that the fitting and mounting is completed, and a pressing member 4 that is detachably mounted on the handler body 2 and presses the hook portion 22 in the lever reception portion 7 in a hooking direction.
摘要翻译：安装在手柄杆5的顶端侧的滑动处理器1，其底端侧安装在被操作部分的滑块9上，具有操纵杆主体2，其具有操纵杆接收部7，操纵杆5 在杠杆锁定部21被锁定在手柄杆5上并且具有钩在杠杆中的钩部22的状态下，具有相对配合并安装在杆接收部7中的杠杆锁定部21的安装附件3 在装配安装完成的状态下的接收部分7以及可拆卸地安装在处理机主体2上的按压部件4，并且沿钩子方向按压杆接收部分7中的钩部22。

7. 发明授权

US4843038A Black sintered body of aluminum nitride and process for producing the same 失效
标题翻译：黑色氮化铝烧结体及其制造方法
公开(公告)号：US4843038A
公开(公告)日：1989-06-27
申请号：US118192
申请日：1987-11-06
申请人： Shusei Kuratani , Kohichi Uno , Shinya Mizuno , Hisashi Sakuramoto , Satoshi Nishiyama
发明人： Shusei Kuratani , Kohichi Uno , Shinya Mizuno , Hisashi Sakuramoto , Satoshi Nishiyama
IPC分类号： C04B35/581
CPC分类号： C04B35/581
摘要： Black sintered bodies of aluminum nitride are produced by adding a sintering aid selected from the group consisting of (a) an oxide mixture of calcium oxide and at least one of tungsten oxide and molybdenum oxide, (b) an oxide containing calcium and at least one of tungsten and molybdenum and (c) a mixture of compounds capable of being converted into said oxide mixture (a) or said oxide (b) by sintering to aluminum nitride so that the resulting composition consists essentially of 0.1 to 20 wt. % in the total amount (calculated as oxides of Ca, W and Mo) of the sintering aid and balance aluminum nitride, molding the composition and sintering the molded composition at relatively low temperature. The black sintered bodies thus obtained are especially useful as materials for insulating substrate, heat sink and packaging for semiconductor device due to their high density, good thermal conductivity and superior light-shielding ability.
摘要翻译：通过添加选自（a）氧化钙和氧化钨和氧化钼中的至少一种的氧化物混合物的烧结助剂来制备氮化铝的黑色烧结体，（b）含钙的氧化物和至少一种的钨和钼，和（c）通过烧结到氮化铝，能够转化为所述氧化物混合物（a）或所述氧化物（b）的化合物的混合物，使得所得组合物基本上由0.1至20重量％总量（以Ca，W和Mo的氧化物计算）和余量为氮化铝的％（％），模塑该组合物并在相对较低的温度下烧结该组合物。这样获得的黑色烧结体由于其高密度，良好的导热性和优异的遮光能力而特别适用于半导体器件绝缘基板，散热器和封装材料。

8. 发明授权

US08748303B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08748303B2
公开(公告)日：2014-06-10
申请号：US13186894
申请日：2011-07-20
申请人： Shinya Mizuno
发明人： Shinya Mizuno
IPC分类号： H01L21/28
CPC分类号： H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/7787
摘要： A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode.
摘要翻译：一种制造半导体器件的方法包括：在氮化物半导体层的源极区和漏极区上形成欧姆电极，在氮化物半导体层的最上表面与欧姆电极之间形成低电阻层，通过退火氮化物半导体层在形成低电阻层之后从源极区域和漏极区域中的至少一个去除欧姆电极，以及在低电阻层上形成源电极和漏电极中的至少一个，至少一个源电极和漏电极具有边缘，边缘和栅电极之间的距离比低电阻层的边缘和栅电极之间的距离长。

9. 发明授权

US08191608B2 Device for low-pressure casting, a method for filling inert gas in the device, and method for producing a cast 有权
标题翻译：用于低压铸造的装置，在装置中填充惰性气体的方法，以及铸件的制造方法
公开(公告)号：US08191608B2
公开(公告)日：2012-06-05
申请号：US12596112
申请日：2008-04-08
申请人： Shinya Mizuno , Yutaka Murata
发明人： Shinya Mizuno , Yutaka Murata
IPC分类号： B22D18/04 , B22D18/08 , B22D46/00
CPC分类号： B22D18/04 , B22D18/08
摘要： A device for low-pressure casting wherein the stalk or the guiding tube is filled with inert gas by causing the space formed over the molten metal in the pressurizing room to communicate with the stalk or the guiding tube. The device for low-pressure casting (100) wherein molten metal is supplied into a mold through a stalk (8) suspended from a gate for pouring of the mold (7) or through a guiding tube (21) connected to the gate for pouring at one end by pressurizing the molten metal by inert gas, the device including: a room for holding molten metal (1); a pressurizing room (2) to be in communication with the room for holding molten metal through a hole for communication (4), wherein a bottom end of the stalk (8) enters the pressurizing room or an opposite end of the guiding hole is connected to the pressurizing room, and wherein the molten metal is pressurized by inert gas; an on-off valve (5) for opening and shutting the hole for communication; a sensing device (15) for sensing that the space over the molten metal in the pressurizing room communicates with the stalk or the guiding tube; and a device (30) for supplying inert gas to an upper part of the pressurizing room.
摘要翻译：一种用于低压铸造的装置，其中通过使形成在加压室中的熔融金属上的空间与杆或引导管连通而将惰性气体填充到惰性气体中。用于低压铸造的设备（100），其中熔融金属通过悬挂在浇口（7）上的浇口的浇口（8）或通过连接到浇注浇口的引导管（21）供给到模具中在一端通过惰性气体对熔融金属加压，该装置包括：用于保持熔融金属（1）的空间; 加压室（2），与通过用于连通的孔（4）保持熔融金属的房间连通，其中，所述杆（8）的底端进入所述加压室或所述引导孔的相对端连接到所述加压室，并且其中所述熔融金属由惰性气体加压; 用于打开和关闭用于连通的孔的开关阀（5）; 感测装置（15），用于感测加压室中的熔融金属上的空间与茎或引导管连通; 以及用于向加压室的上部供给惰性气体的装置（30）。

10. 发明申请

US20120021572A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120021572A1
公开(公告)日：2012-01-26
申请号：US13186894
申请日：2011-07-20
申请人： Shinya Mizuno
发明人： Shinya Mizuno
IPC分类号： H01L21/337 , H01L21/28
CPC分类号： H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/66462 , H01L29/7787
摘要： A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode.
摘要翻译：一种制造半导体器件的方法包括：在氮化物半导体层的源极区和漏极区上形成欧姆电极，在氮化物半导体层的最上表面与欧姆电极之间形成低电阻层，通过退火氮化物半导体层在形成低电阻层之后从源极区域和漏极区域中的至少一个去除欧姆电极，以及在低电阻层上形成源电极和漏电极中的至少一个，至少一个源电极和漏电极具有边缘，边缘和栅电极之间的距离比低电阻层的边缘和栅电极之间的距离长。

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