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1. 发明授权

US5296601A Process for producing carboxylic acid esters 失效
标题翻译：羧酸酯的制备方法
公开(公告)号：US5296601A
公开(公告)日：1994-03-22
申请号：US888618
申请日：1992-05-27
申请人： Keiji Suto , Masaaki Kudo , Moriharu Yamamoto
发明人： Keiji Suto , Masaaki Kudo , Moriharu Yamamoto
IPC分类号： C07D333/40 , B01J31/24 , C07B43/06 , C07B61/00 , C07C67/00 , C07C67/36 , C07C69/76 , C07C69/773 , C07C69/80 , C07C69/92 , C07C231/00 , C07C231/10 , C07C233/12 , C07C233/65 , C07C233/75 , C07C235/84 , C07C253/30 , C07C255/57 , C07C313/00 , C07C315/04 , C07C317/14 , C07C317/44 , C07D213/79 , C07D213/80 , C07D213/803 , C07D213/81 , C07D213/82 , C07D215/16 , C07D215/50 , C07D333/38 , C07C69/84 , C07C213/55 , C07C241/44
CPC分类号： C07D213/803 , C07C317/00 , C07D213/81 , C07D215/50 , C07D333/38
摘要： A process for producing a carboxylic acid ester, which comprises reacting an organic chloride having at least one chlorine atom on its ring of a substituted or unsubstituted, aromatic or heterocyclic hydrocarbon with carbon monoxide and an amine or an alcohol in the presence of a base by using as catalysts a palladium compound and a phosphine compound represented by the general formula (V):(R).sub.2 P--X--P(R).sub.2 (V)wherein R is an alkyl group or a substituted or unsubstituted phenyl group, and X is an alkylene group having 1 to 6 carbon atoms, ##STR1## or a binaphthyl group.
摘要翻译：一种制备羧酸酯的方法，其包括在取代或未取代的芳族或杂环烃环上具有至少一个氯原子的有机氯化物与一氧化碳和胺或醇在碱的存在下反应使用由通式（V）表示的钯化合物和膦化合物：（R）2P-XP（R）2（V）表示的催化剂，其中R是烷基或取代或未取代的苯基，X是（*化学结构*）（*化学结构*）（*化学结构*）或联萘基。

2. 发明授权

US5194631A Process for producing carboxylic acids 失效
标题翻译：制备羧酸的方法
公开(公告)号：US5194631A
公开(公告)日：1993-03-16
申请号：US378284
申请日：1989-07-11
申请人： Keiji Suto , Koji Nakasa , Masaaki Kudo , Moriharu Yamamoto
发明人： Keiji Suto , Koji Nakasa , Masaaki Kudo , Moriharu Yamamoto
IPC分类号： B01J31/24 , C07C51/10
CPC分类号： B01J31/30 , B01J31/0237 , B01J31/2295 , B01J31/2409 , B01J31/2414 , B01J31/2452 , C07C51/10 , B01J2231/34 , B01J2531/0205 , B01J2531/0266 , B01J2531/824 , B01J2531/842
摘要： A process for producing a carboxylic acid which comprises reacting an organic chloride having at least one chloride atom on its ring of a substituted or unsubstituted, aromatic or heterocyclic hydrocarbon with carbon monoxide in the presence of an inorganic base or an organic base and water at a reaction temperature of 150.degree. to 300.degree. C., and preferably 160.degree. to 300.degree. C., by using as catalysts a palladium compound and a phosphine compound represented by the general formula (III):(R).sub.2 P--X--P(R).sub.2 (III)wherein R is an alkyl group or a substituted or unsubstituted phenyl group, and X is an alkylene group having 1 to 6 carbon atoms, ##STR1## or a binaphthyl group.
摘要翻译：一种制备羧酸的方法，其包括在无机碱或有机碱和水的存在下，使其取代或未取代的芳族或杂环烃环上具有至少一个氯原子的有机氯与一氧化碳反应，通过使用由通式（III）表示的钯化合物和膦化合物作为催化剂：（R）2P-XP（R）），反应温度为150-300℃，优选为160-300℃。 2（III）其中R为烷基或取代或未取代的苯基，X为碳原子数1〜6的亚烷基，或者是联萘基。

3. 发明授权

US5142057A Process for producing carboxylic acid amides 失效
标题翻译：羧酸酰胺的制备方法
公开(公告)号：US5142057A
公开(公告)日：1992-08-25
申请号：US528919
申请日：1990-05-29
申请人： Keiji Suto , Masaaki Kudo , Moriharu Yamamoto
发明人： Keiji Suto , Masaaki Kudo , Moriharu Yamamoto
IPC分类号： C07D333/40 , B01J31/24 , C07B43/06 , C07B61/00 , C07C67/00 , C07C67/36 , C07C69/76 , C07C69/773 , C07C69/80 , C07C69/92 , C07C231/00 , C07C231/10 , C07C233/12 , C07C233/65 , C07C233/75 , C07C235/84 , C07C253/30 , C07C255/57 , C07C313/00 , C07C315/04 , C07C317/14 , C07C317/44 , C07D213/79 , C07D213/80 , C07D213/803 , C07D213/81 , C07D213/82 , C07D215/16 , C07D215/50 , C07D333/38
CPC分类号： C07D213/803 , C07C317/00 , C07D213/81 , C07D215/50 , C07D333/38
摘要： A process for producing a carboxylic acid amide or ester, which comprises reacting an organic chloride having at least one chlorine atom on its ring of a substituted or unsubstituted, aromatic or heterocyclic hydrocarbon with carbon monoxide and an amine or an alcohol in the presence of a base by using as catalysts a palladium compound and a phosphine compound represented by the general formula (V):(R).sub.2 P--X--P(R).sub.2 (V)wherein R is an alkyl group or a substituted or unsubstituted phenyl group, and X is an alkylene group having 1 to 6 carbon atoms ##STR1## or a binaphthyl group.
摘要翻译：一种制备羧酸酰胺或酯的方法，其包括在取代或未取代的芳族或杂环烃环上具有至少一个氯原子的有机氯与一氧化碳和胺或醇反应，所述有机氯在通过使用钯化合物和由通式（V）表示的膦化合物作为催化剂：（R）2P-XP（R）2（V）其中R是烷基或取代或未取代的苯基，X 是具有1至6个碳原子的亚烷基基团，或者是一个联萘基团。

4. 发明授权

US08859180B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权
标题翻译：用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法
公开(公告)号：US08859180B2
公开(公告)日：2014-10-14
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/039 , C08F2/06 , C08F224/00 , C08F220/18 , C08F216/38
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to Be Achieved]To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement]The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的任务]为了提供半导体光刻的化学放大型正共聚物，其消除了现有技术的问题，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物，（B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下，使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。

5. 发明授权

US08201434B2 Method of forming cam lobe 失效
标题翻译：形成凸轮叶的方法
公开(公告)号：US08201434B2
公开(公告)日：2012-06-19
申请号：US12260463
申请日：2008-10-29
申请人： Masaaki Kudo
发明人： Masaaki Kudo
IPC分类号： B21D22/00
CPC分类号： B21J5/02 , B21K1/00
摘要： A primary intermediate formed article is formed into a substantially columnar shape. A secondary intermediate formed article is obtained by piercing a preliminary hole in the primary intermediate formed article such that a radial thickness of a prospective cam top part is larger than a radial thickness of a prospective cam base part, and by forming a positioning part. The positioning part is brought into contact with a tertiary intermediate forged article forging die so as to be positioned, and the secondary intermediate formed article is pressed and forged to form a tertiary intermediate forged article including a cam top, a cam base, and a deformed hole formed by deforming the preliminary hole. A finished cam lobe is obtained by piercing, in an area including the deformed hole.
摘要翻译：初级中间成型体形成为大致圆柱状。通过在初级中间成型制品中刺穿预备孔使得预期凸轮顶部的径向厚度大于预期凸轮基部的径向厚度，并且通过形成定位部而获得第二中间成形制品。使定位部与第三中间锻造制品模具接触以定位，并且将第二中间成型制品压制锻造以形成包括凸轮顶部，凸轮基座和变形的第三中间锻造制品通过使预备孔变形而形成的孔。通过在包括变形孔的区域中穿孔来获得成品凸轮凸角。

6. 发明申请

US20100062371A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权
标题翻译：用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法
公开(公告)号：US20100062371A1
公开(公告)日：2010-03-11
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/004 , C08G63/08
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的目的]为了提供消除现有技术问题的化学放大型半导体光刻用正共聚物，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物，（B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下，使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。

7. 发明授权

US5028493A Aluminum alloy locally having a composite portion 失效
标题翻译：铝合金局部具有复合部分
公开(公告)号：US5028493A
公开(公告)日：1991-07-02
申请号：US505516
申请日：1990-04-06
申请人： Yoshihiro Suzuki , Toshio Ogiwara , Masaaki Kudo
发明人： Yoshihiro Suzuki , Toshio Ogiwara , Masaaki Kudo
IPC分类号： C22C1/00 , B22F3/26 , B22F7/08 , C23C10/38 , F16J9/22
CPC分类号： B22F7/08 , B22F3/26 , F16J9/22 , F05C2201/021 , F05C2201/0448 , Y10T428/12479 , Y10T428/12486 , Y10T428/12743 , Y10T428/1275 , Y10T428/12757
摘要： A porous metal supporting a composite portion of an aluminum alloy is formed by means of pressing a pair of surfaces thereof, and then chromium is cemented by diffusion before the molten aluminum alloy is penetrated thereinto. Thus, not only the mechanical strength of the interface between the aluminum alloy and the porous metal, but also the wear resistance of the composite portion can be improved.

8. 发明授权

US07960494B2 Copolymer for semiconductor lithography and process for producing the same 有权
标题翻译：半导体光刻用共聚物及其制造方法
公开(公告)号：US07960494B2
公开(公告)日：2011-06-14
申请号：US12516489
申请日：2007-12-05
申请人： Takanori Yamagishi , Masaaki Kudo , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Masaaki Kudo , Satoshi Yamaguchi
IPC分类号： C08G63/02 , C08G63/00
CPC分类号： C08F2/06 , C08F12/24 , C08F212/14 , C08F220/14 , C08F220/18 , C08F220/28 , C08F220/32 , G03F7/0397
摘要： To provide a copolymer for semiconductor lithography employed for forming a resist film as well as thin films such as an anti-reflection film, a gap-filling film, a top coating film, etc. which are formed on or under a resist film, these films being employed in semiconductor lithography, wherein the copolymer has excellent solubility in a solution of a thin film-forming composition and prevents generation of microparticles (e.g., microgel) and pattern defects, and to provide a method for producing the copolymer reliably on an industrial scale.The invention is directed to a copolymer for semiconductor lithography having at least one repeating unit selected from among (A) a repeating unit having a hydroxyl group; (B) a repeating unit having a structure in which a hydroxyl group is protected by a group which inhibits dissolution in an alkaline developer and which dissociates by the action of an acid; (C) a repeating unit having a lactone structure; and (D) a repeating unit having a cyclic ether structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate having a viscosity of 15 mPa·sec is caused to pass through a filter having a pore size of 0.03 μm under a pressure difference of 0.1 MPa for 60 minutes, the solution exhibits an average flow rate per unit filter area of 200 g/min/m2 or more, and to a method for producing the copolymer.
摘要翻译：为了提供用于形成抗蚀剂膜的半导体光刻用共聚物以及形成在抗蚀剂膜上或下方的抗反射膜，间隙填充膜，顶涂层等薄膜，这些在半导体光刻中使用的膜，其中共聚物在薄膜形成组合物的溶液中具有优异的溶解性，并且防止微粒（例如微凝胶）和图案缺陷的产生，并提供在工业上可靠地制备共聚物的方法规模。本发明涉及一种用于半导体光刻的共聚物，其具有至少一个选自（A）具有羟基的重复单元的重复单元; （B）具有羟基被抑制在碱性显影剂中溶解并通过酸作用而离解的基团保护的结构的重复单元; （C）具有内酯结构的重复单元; 和（D）具有环醚结构的重复单元，其中当使具有15mPa·sec的粘度的丙二醇单甲醚乙酸酯中的共聚物溶液通过孔径为0.03μm的过滤器时压力差为0.1MPa，60分钟时，溶液的平均流速为200g / min / m 2以上，单位面积的平均流量以及共聚物的制造方法。

9. 发明申请

US20090306328A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：用于SEMICONDUCTOR LITHOGRAPHY的共聚物及其生产方法
公开(公告)号：US20090306328A1
公开(公告)日：2009-12-10
申请号：US12516489
申请日：2007-12-05
申请人： Takanori Yamagishi , Masaaki Kudo , Satoshi Yamaguchi
发明人： Takanori Yamagishi , Masaaki Kudo , Satoshi Yamaguchi
IPC分类号： C08G63/02 , C08G67/00 , C08G63/08 , C08G65/00 , C08G63/06
CPC分类号： C08F2/06 , C08F12/24 , C08F212/14 , C08F220/14 , C08F220/18 , C08F220/28 , C08F220/32 , G03F7/0397
摘要： To provide a copolymer for semiconductor lithography employed for forming a resist film as well as thin films such as an anti-reflection film, a gap-filling film, a top coating film, etc. which are formed on or under a resist film, these films being employed in semiconductor lithography, wherein the copolymer has excellent solubility in a solution of a thin film-forming composition and prevents generation of microparticles (e.g., microgel) and pattern defects, and to provide a method for producing the copolymer reliably on an industrial scale.The invention is directed to a copolymer for semiconductor lithography having at least one repeating unit selected from among (A) a repeating unit having a hydroxyl group; (B) a repeating unit having a structure in which a hydroxyl group is protected by a group which inhibits dissolution in an alkaline developer and which dissociates by the action of an acid; (C) a repeating unit having a lactone structure; and (D) a repeating unit having a cyclic ether structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate having a viscosity of 15 mPa·sec is caused to pass through a filter having a pore size of 0.03 μm under a pressure difference of 0.1 MPa for 60 minutes, the solution exhibits an average flow rate per unit filter area of 200 g/min/m2 or more, and to a method for producing the copolymer.
摘要翻译：为了提供用于形成抗蚀剂膜的半导体光刻用共聚物以及形成在抗蚀剂膜上或下方的抗反射膜，间隙填充膜，顶涂层等薄膜，这些在半导体光刻中使用的膜，其中共聚物在薄膜形成组合物的溶液中具有优异的溶解性，并且防止微粒（例如微凝胶）和图案缺陷的产生，并提供在工业上可靠地制备共聚物的方法规模。本发明涉及一种用于半导体光刻的共聚物，其具有至少一个选自（A）具有羟基的重复单元的重复单元; （B）具有羟基被抑制在碱性显影剂中溶解并通过酸作用而离解的基团保护的结构的重复单元; （C）具有内酯结构的重复单元; 和（D）具有环醚结构的重复单元，其中当使具有15mPa.sec的粘度的丙二醇单甲醚乙酸酯中的共聚物溶液通过孔径为0.03μm的过滤器时压力差为0.1MPa，60分钟时，溶液的平均流速为200g / min / m 2以上，单位面积的平均流量以及共聚物的制造方法。

10. 发明授权

US6100365A Soluble polyimide resin, process for preparing the same, and polyimide resin solution composition 失效
标题翻译：可溶性聚酰亚胺树脂，其制备方法和聚酰亚胺树脂溶液组合物
公开(公告)号：US6100365A
公开(公告)日：2000-08-08
申请号：US125852
申请日：1999-04-12
申请人： Toshihiko Matsumoto , Toshikazu Kurosaki , Shin Irie , Masaaki Kudo , Yoshiharu Ito , Masao Kaneko
发明人： Toshihiko Matsumoto , Toshikazu Kurosaki , Shin Irie , Masaaki Kudo , Yoshiharu Ito , Masao Kaneko
IPC分类号： C08G73/10 , C08L79/08 , C09D179/08 , C08G69/28
CPC分类号： C09D179/08 , C08G73/10 , C08L79/08
摘要： The present invention provides a novel soluble polyimide resin which is superior in solubility in solvents and transparency, which is useful particularly in electronics and optronics fields, and which has good processability; a process for production of the resin; and a solution composition of the resin. A soluble polyimide resin containing, as part or the whole of the diamine units, a 2,5(or 6)-bis(aminomethyl)bicyclo[2.2.1]heptane and having a light transmittance of 60% or more in a range of wavelength larger than 400 nm in an ultraviolet-visible light spectrum measured for a film of 10-.mu.m thickness; a process for production of the resin; and a solution composition of the resin.
摘要翻译： PCT No.PCT / JP97 / 04820 Sec。 371日期1999年4月12日 102（e）日期1999年4月12日PCT 1997年12月25日PCT公布。公开号WO98 / 29471 日期：1998年7月9日本发明提供了一种在溶剂中的溶解性和透明性优异的新型可溶性聚酰亚胺树脂，其特别适用于电子学和光电学领域，具有良好的加工性能; 树脂的制造方法; 和树脂的溶液组合物。一种可溶性聚酰亚胺树脂，其含有作为部分或全部二胺单元的2,5（或6） - 双（氨基甲基）双环[2.2.1]庚烷，其透光率为60％以上，范围为对于10μm厚度的膜测量的紫外 - 可见光光谱中，波长大于400nm; 树脂的制造方法; 和树脂的溶液组合物。

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