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1. 发明授权

US5969413A Semiconductor device having a tab chip on a tape carrier with lead wirings provided on the tape carrier used as external leads 失效
标题翻译：半导体器件具有在载带上具有引线布线的片状芯片，该导线布置在用作外部引线的载带上
公开(公告)号：US5969413A
公开(公告)日：1999-10-19
申请号：US855931
申请日：1997-05-14
申请人： Keiichi Yano , Kazuo Kimura , Hironori Asai , Jun Monma , Koji Yamakawa , Mitsuyoshi Endo , Hirohisa Osoguchi
发明人： Keiichi Yano , Kazuo Kimura , Hironori Asai , Jun Monma , Koji Yamakawa , Mitsuyoshi Endo , Hirohisa Osoguchi
IPC分类号： H01L23/10 , H01L23/15 , H01L23/28 , H01L23/495 , H01L23/02 , H01L23/12 , H01L23/48
CPC分类号： H01L23/10 , H01L23/15 , H01L23/49572 , H01L24/50 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/07802 , H01L2924/30107
摘要： A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.
摘要翻译：半导体芯片被支撑在带有引线配线的带载体上。半导体芯片电连接到引线配线。该质量的半导体芯片与pe载体结合到氮化铝衬底上。载体上提供的导线结合了作为内部引线和外部引线的两个功能。如上所述的这种结构的半导体封装允许通过引线之间的间距变窄来实现多端子连接，并且允许提供具有优异的散热性能的微型封装。或者，支撑在带载体上并电连接到半导体芯片的引线配线被用作内部引线。对于外部引线，使用与氮化铝基板结合的引线框架。引线框架电连接到设置在带式载体中的内部引线。

2. 发明授权

US5703397A Semiconductor package having an aluminum nitride substrate 失效
标题翻译：具有氮化铝衬底的半导体封装
公开(公告)号：US5703397A
公开(公告)日：1997-12-30
申请号：US745367
申请日：1996-11-08
申请人： Mitsuyoshi Endo , Hironori Asai , Keiichi Yano , Yoshitoshi Sato
发明人： Mitsuyoshi Endo , Hironori Asai , Keiichi Yano , Yoshitoshi Sato
IPC分类号： H01L23/10 , H01L23/13 , H01L23/15 , H01L23/367 , H01L23/373 , H01L23/498 , H01L23/053 , H01L23/12
CPC分类号： H01L23/13 , H01L23/10 , H01L23/15 , H01L23/3675 , H01L23/3731 , H01L23/49822 , H01L23/49838 , H01L2224/48227 , H01L24/48 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15153 , H01L2924/1517 , H01L2924/15174 , H01L2924/15312 , H01L2924/16152 , H01L2924/16195 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025
摘要： A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 .mu.m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.
摘要翻译：一种半导体陶瓷多层封装，包括具有安装在其一个表面上的半导体元件的氮化铝衬底和与半导体元件电连接的布线图案，连接到布线图案并且设置在氮化铝衬底的另一表面上的连接端子，以及用氮化铝衬底与金属接合层或厚度不大于100μm的玻璃层以密封半导体元件的方式连接的密封构件具有显着提高的散热性能并实现该物体增加引脚数量并减小封装尺寸。

3. 发明授权

US5928769A Aluminum nitride wiring substrate and method for production thereof 失效
标题翻译：氮化铝接线基板及其制造方法
公开(公告)号：US5928769A
公开(公告)日：1999-07-27
申请号：US821448
申请日：1997-03-21
申请人： Jun Monma , Hironori Asai
发明人： Jun Monma , Hironori Asai
IPC分类号： B32B15/01 , B32B15/02 , H01L23/13 , H05K1/03 , H05K1/09 , H05K3/46 , B32B15/04
CPC分类号： H05K1/092 , B32B15/01 , B32B15/02 , H05K3/4629 , Y10S428/901 , Y10T428/24926
摘要： This invention provides an aluminum nitride wiring substrate in which a wiring metal layer for forming a signal wiring layer is densified to micropattern a signal wiring portion of an aluminum nitride package incorporating a semiconductor element therein and to increase the signal processing speed of the semiconductor element itself, the electric resistance of the wiring metal layer is reduced while keeping high thermal conductivity and insulating characteristics inherent in the aluminum nitride material to make it possible to mount a high-speed and high-output semiconductor element, and the wiring metal layer is prevented from defective wire continuity, odd appearance, or etc, and a method for the production thereof. In an aluminum nitride wiring substrate comprising an aluminum nitride substrate and a wiring metal layer provided in at least either of the surface and the interior of the aluminum nitride substrate and formed by sintering the aluminum nitride wiring substrate and the wiring metal layer, the wiring metal layer contains manganese and at least one selected from the group consisting of copper, silver, a copper alloy, and a silver alloy.
摘要翻译：本发明提供了一种氮化铝配线基板，其中用于形成信号布线层的布线金属层被致密化以将其中包含半导体元件的氮化铝封装的信号布线部分微图形化，并且增加半导体元件本身的信号处理速度在保持高导热率和氮化铝材料固有的绝缘特性的同时，减少了布线金属层的电阻，从而能够安装高速高输出半导体元件，并且防止了布线金属层导线连续性不佳，外观奇怪等，以及其制造方法。在包含氮化铝衬底和设置在氮化铝衬底的表面和内部的至少之一中并通过烧结氮化铝配线衬底和布线金属层而形成的布线金属层的氮化铝布线衬底中，布线金属层含有锰和选自铜，银，铜合金和银合金中的至少一种。

4. 发明授权

US5736790A Semiconductor chip, package and semiconductor device 失效
标题翻译：半导体芯片，封装和半导体器件
公开(公告)号：US5736790A
公开(公告)日：1998-04-07
申请号：US710769
申请日：1996-09-20
申请人： Kiyoshi Iyogi , Kaoru Koiwa , Keiichi Yano , Hironori Asai
发明人： Kiyoshi Iyogi , Kaoru Koiwa , Keiichi Yano , Hironori Asai
IPC分类号： H01L23/485 , H05K1/11 , H05K3/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/10 , H01L24/13 , H05K1/111 , H05K3/3436 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/181 , H05K2201/0212 , H05K2201/0367 , H05K2201/09736 , H05K2201/09745 , H05K2201/10234 , H05K2201/10992 , H05K2203/041 , Y02P70/611 , Y02P70/613
摘要： Disclosed is a bump formed on a pad which is provided on either a semiconductor chip or a package or a wiring substrate for input or output thereof, for making electric connection on the pad. The bump has: a projection projecting from the pad; a ball having conductivity and located above the pad; and a conductive bonding material for bonding the pad for and the ball, wherein creep strength of the ball is larger than strength of the conductive bonding material. With another conductive bonding material provided on the other pad of a wiring substrate or a package, the ball of the bump of the semiconductor chip or the package is placed close to another pad of the wiring substrate or package. The conductive bonding material of the other pad is heated and melted to connect the ball and the other pad of the wiring substrate or package by the conductive bonding material.
摘要翻译：公开了一种形成在焊盘上的凸块，其设置在半导体芯片或封装或其输入或输出的布线基板上，用于在焊盘上进行电连接。凸起具有：从该垫突出的突起; 具有导电性并位于垫上方的球; 以及用于接合焊盘和球的导电接合材料，其中球的蠕变强度大于导电接合材料的强度。通过设置在布线基板或封装的另一个焊盘上的另一个导电接合材料，将半导体芯片或封装的凸块的球放置成靠近布线基板或封装的另一个焊盘。另一个焊盘的导电接合材料被加热熔化，以通过导电接合材料将接线衬底或封装的球和另一焊盘连接起来。

5. 发明授权

US6046499A Heat transfer configuration for a semiconductor device 失效
标题翻译：半导体器件的传热配置
公开(公告)号：US6046499A
公开(公告)日：2000-04-04
申请号：US824844
申请日：1997-03-26
申请人： Keiichi Yano , Hironori Asai
发明人： Keiichi Yano , Hironori Asai
IPC分类号： H01L23/367 , H01L23/498 , H01L23/34 , H01L23/48
CPC分类号： H01L23/49816 , H01L23/3677 , H01L24/45 , H01L2224/05599 , H01L2224/16 , H01L2224/16225 , H01L2224/32225 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45565 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/85399 , H01L24/48 , H01L24/73 , H01L2924/00011 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/30107 , H01L2924/3011
摘要： Disclosed is a semiconductor package having: a semiconductor chip; a package substrate; a wire connected to the semiconductor chip; and an electric connection member formed on the package substrate to electrically connect the wire to a printed board when the package substrate is mounted on the printed board. One surface of the package substrate has a first area in which the semiconductor chip is mounted and a second area in which the wire are arranged, and the other surface has a third area which is located in the rear of the second area and in which the electric connection member connects the wire to the printed board and a fourth area which is located in the rear of the first area. A heat-transfer member is provided in the fourth area and transmits heat generated by the semiconductor chip to the printed board through the package substrate.
摘要翻译：公开了一种半导体封装，其具有：半导体芯片; 封装衬底; 连接到半导体芯片的导线; 以及电连接构件，形成在所述封装基板上，以在将所述封装基板安装在所述印刷电路板上时将所述导线电连接到印刷电路板。封装基板的一个表面具有其中安装半导体芯片的第一区域和布置导线的第二区域，另一个表面具有位于第二区域的后部的第三区域，电连接构件将导线连接到印刷电路板和位于第一区域后部的第四区域。传热部件设置在第四区域中，并且通过封装基板将由半导体芯片产生的热量传递到印刷电路板。

6. 发明授权

US5909058A Semiconductor package and semiconductor mounting part 失效
标题翻译：半导体封装和半导体安装部件
公开(公告)号：US5909058A
公开(公告)日：1999-06-01
申请号：US934775
申请日：1997-09-22
申请人： Keiichi Yano , Hironori Asai , Kaoru Koiwa , Nobuo Iwase
发明人： Keiichi Yano , Hironori Asai , Kaoru Koiwa , Nobuo Iwase
IPC分类号： H01L23/24 , H01L23/498 , H01L23/34 , H01L23/29 , H01L23/48
CPC分类号： H01L23/49816 , H01L23/24 , H01L23/49833 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/49109 , H01L2224/73265 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01019 , H01L2924/01322 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/30107 , H01L2924/3011
摘要： A thin type semiconductor package having a low thermal resistance and a low electric resistance is disclosed, that comprises a nitride ceramic supporting substrate having a first main surface and a second main surface, the nitride ceramic supporting substrate having via-holes that pass through from the first main surface to the second main surface, a resin film having a wiring layer, the resin film being bonded to the first main surface of the supporting substrate, the wiring layer being electrically connected to an edge portion of the via-holes on the first main surface, the resin film having an opening region, a semiconductor chip directly mounted on the first main surface of the nitride ceramic supporting substrate, disposed at the opening region of the resin film, and electrically connected to the wiring layer of the resin film, and external connection terminals disposed on the edge portion of the via-holes of the second main surface.
摘要翻译：公开了一种具有低热阻和低电阻的薄型半导体封装，其包括具有第一主表面和第二主表面的氮化物陶瓷支撑衬底，所述氮化物陶瓷支撑衬底具有通孔，第一主表面到第二主表面的树脂膜，具有布线层的树脂膜，树脂膜粘合到支撑基板的第一主表面，布线层电连接到第一主表面上的通孔的边缘部分主表面，具有开口区域的树脂膜，直接安装在氮化物陶瓷支撑基板的第一主表面上的半导体芯片，设置在树脂膜的开口区域，并与树脂膜的布线层电连接，以及设置在第二主表面的通孔的边缘部分上的外部连接端子。

7. 发明授权

US08974697B2 Luminescent material 有权
标题翻译：发光材料
公开(公告)号：US08974697B2
公开(公告)日：2015-03-10
申请号：US13601070
申请日：2012-08-31
申请人： Keiko Albessard , Masahiro Kato , Yumi Fukuda , Iwao Mitsuishi , Takahiro Sato , Shigeya Kimura , Aoi Okada , Naotoshi Matsuda , Ryosuke Hiramatsu , Yasushi Hattori , Kunio Ishida , Hironori Asai
发明人： Keiko Albessard , Masahiro Kato , Yumi Fukuda , Iwao Mitsuishi , Takahiro Sato , Shigeya Kimura , Aoi Okada , Naotoshi Matsuda , Ryosuke Hiramatsu , Yasushi Hattori , Kunio Ishida , Hironori Asai
IPC分类号： C09K11/59 , C09K11/77 , H05B33/12 , H01L33/50
CPC分类号： C09K11/7734 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H05B33/12 , H01L2924/00012 , H01L2924/00014
摘要： According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
摘要翻译：根据一个实施方案，发光材料在具有在250至520nm的波长范围内的发光峰的光激发时，显示在570至670nm的波长范围内的发光峰。发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。主体材料由Eu活化，包括Sr和Ca，以满足0.008＆nlE的关系; MCa /（MSr + MCa）＆nlE; 0.114，其中MCa是Ca的摩尔数，MSr是Sr的摩尔数。

8. 发明授权

US08685277B2 Fluorescent substance and light-emitting device employing the same 有权
标题翻译：荧光物质及其使用的发光装置
公开(公告)号：US08685277B2
公开(公告)日：2014-04-01
申请号：US12504180
申请日：2009-07-16
申请人： Yumi Fukuda , Hironori Asai
发明人： Yumi Fukuda , Hironori Asai
IPC分类号： C09K11/64 , H01L33/00
CPC分类号： C09K11/7728 , C04B35/597 , C04B2235/3217 , C04B2235/3852 , C04B2235/3865 , C04B2235/3873 , C09K11/0883 , C09K11/7734 , H01L33/504 , H01L33/507 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： The present invention provides a fluorescent substance excellent both in quantum efficiency and in temperature characteristics, and also provides a light-emitting device utilizing the fluorescent substance. This fluorescent substance contains an inorganic compound comprising a metal element M, a trivalent element M1 other than the metal element M, a tetravalent element M2 other than the metal element M, and either or both of O and N. In the inorganic compound, the metal element M is partly replaced with a luminescence center element R. The crystal structure of the fluorescent substance is basically the same as Sr3Al3Si13O2N21, but the chemical bond lengths of M1-N and M2-N are within the range of ±15% based on those of Al—N and Si—N calculated from the lattice constants and atomic coordinates of Sr3Al3Si13O2N21, respectively. The fluorescent substance emits luminescence having a peak in the range of 490 to 580 nm when excited with light of 250 to 500 nm.
摘要翻译：本发明提供了量子效率和温度特性都优异的荧光物质，并且还提供了利用荧光物质的发光装置。该荧光物质含有包含金属元素M，金属元素M以外的三价元素M1，金属元素M以外的四价元素M2，O和N中的任一种或两者的无机化合物。在无机化合物中，金属元素M部分地被发光中心元件R替代。荧光物质的晶体结构基本上与Sr 3 Al 3 Si 13 O 2 N 21相同，但M1-N和M2-N的化学键长度在±15％的范围内基于分别由Sr3Al3Si13O2N21的晶格常数和原子坐标计算Al-N和Si-N。当用250〜500nm的光激发时，荧光物质发射具有在490〜580nm范围内的峰值的发光。

9. 发明授权

US08105502B2 Luminescent material 有权
标题翻译：发光材料
公开(公告)号：US08105502B2
公开(公告)日：2012-01-31
申请号：US12211969
申请日：2008-09-17
申请人： Yumi Fukuda , Jun-ichi Tatami , Hironori Asai , Katsutoshi Komeya , Naotoshi Matsuda , Toru Wakihara , Keiko Albessard , Shoko Abe
发明人： Yumi Fukuda , Jun-ichi Tatami , Hironori Asai , Katsutoshi Komeya , Naotoshi Matsuda , Toru Wakihara , Keiko Albessard , Shoko Abe
IPC分类号： C09K11/08
CPC分类号： C09K11/7734 , C04B35/584 , C04B35/593 , C04B2235/3224 , C04B2235/3229 , C04B2235/3826 , C04B2235/3852 , C04B2235/3865 , C04B2235/3873 , C04B2235/608 , C04B2235/6562 , C04B2235/661 , C04B2235/666 , C04B2235/9661 , C09K11/0883 , C09K11/7721 , C09K11/7749 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A luminescent material is provided, which includes a carbide oxynitride-based compound having a composition represented by formula 1: (M1−wRw)uAl1−xSi1+vOzNtCy formula 1 wherein M is at least one metal element excluding Si and Al, and R is a luminescent central element. w, u, x, v, z, t and y satisfy following relationships: 0.001
摘要翻译：提供了一种发光材料，其包括具有由式1表示的组成的碳纳米管氮氧化物基化合物：（M1-wRw）uAl1-xSi1 + vOzNtCy式1其中M是除Si和Al以外的至少一种金属元素，R是发光中心元件。 w，u，x，v，z，t和y满足以下关系：0.001

10. 发明申请

US20110057149A1 LUMINESCENT MATERIAL AND LIGHT-EMITTING DEVICE 有权
标题翻译：发光材料和发光装置
公开(公告)号：US20110057149A1
公开(公告)日：2011-03-10
申请号：US12944926
申请日：2010-11-12
申请人： Yumi FUKUDA , Masaaki Tamanani , Katsuko Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
发明人： Yumi FUKUDA , Masaaki Tamanani , Katsuko Tamatani , Hironori Asai , Ryosuke Hiramatsu , Junichi Tatami , Katsutoshi Komeya , Toru Wakihara
IPC分类号： C09K11/77 , C09K11/08 , C09K11/54
CPC分类号： C09K11/7734 , C09K11/0883 , H01L33/502 , H01L2224/48091 , H01L2924/00014
摘要： A luminescent material which is featured in that it exhibits an emission peak at a wavelength ranging from 490 to 580 nm as it is excited by light having a wavelength ranging from 250 to 500 nm and that it has a composition represented by the following general formula (2): (M1-xRx)a2AlSib2Oc2Nd2 (2) (In the general formula (2), M is at least one metallic element excluding Si and Al, R is a luminescence center element, and x, a2, b2, c2 and d2 satisfy the following relationships: 0
摘要翻译：一种发光材料，其特征在于，当波长为250-500nm的光被激发时，其表现出在490-580nm波长范围内的发射峰，并且具有由以下通式表示的组成（ 2）:( M1-xRx）a2AlSib2Oc2Nd2（2）（在通式（2）中，M是除Si和Al以外的至少一种金属元素，R是发光中心元素，x，a2，b2，c2，d2 满足以下关系：0

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