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1. 发明授权

US07501223B2 Polymer, resist composition and patterning process using the same 有权
标题翻译：聚合物，抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US07501223B2
公开(公告)日：2009-03-10
申请号：US11902760
申请日：2007-09-25
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , Y10S430/106
摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.
摘要翻译：公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性抵抗性。

2. 发明授权

US08367295B2 Preparation process of chemically amplified resist composition 有权
标题翻译：化学增幅抗蚀剂组合物的制备工艺
公开(公告)号：US08367295B2
公开(公告)日：2013-02-05
申请号：US12110651
申请日：2008-04-28
申请人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
发明人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
IPC分类号： G03F7/004
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.
摘要翻译：提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

3. 发明申请

US20080274422A1 PREPARATION PROCESS OF CHEMICALLY AMPLIFIED RESIST COMPOSITION 有权
标题翻译：化学稳定组分的制备方法
公开(公告)号：US20080274422A1
公开(公告)日：2008-11-06
申请号：US12110651
申请日：2008-04-28
申请人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
发明人： Keiichi Masunaga , Takanobu Takeda , Tamotsu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Osamu Watanabe
IPC分类号： G03F7/004
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： Provided are a preparation method of a resist composition which enables stabilization of a dissolution performance of a resist film obtained from the resist composition thus prepared; and a resist composition obtained by the preparation process and showing small lot-to-lot variations in degradation over time. The process of the present invention is for preparing a chemically amplified resist composition containing a binder, an acid generator, a nitrogenous basic substance and a solvent and it has steps of selecting, as the solvent, a solvent having a peroxide content not greater than an acceptable level, and mixing constituent materials of the resist composition in the selected solvent.
摘要翻译：提供一种抗蚀剂组合物的制备方法，其能够稳定由如此制备的抗蚀剂组合物获得的抗蚀剂膜的溶解性能; 以及通过制备方法获得的抗蚀剂组合物，并且随着时间的推移显示出小的批次间的劣化变化。本发明的方法是制备含有粘合剂，酸产生剂，含氮碱性物质和溶剂的化学放大型抗蚀剂组合物，其具有以下步骤：选择过氧化物含量不大于将所述抗蚀剂组合物的构成材料混合在所选择的溶剂中。

4. 发明申请

US20080090179A1 Novel polymer, resist composition and patterning process using the same 有权
标题翻译：新型聚合物，抗蚀剂组合物和使用其的图案化工艺
公开(公告)号：US20080090179A1
公开(公告)日：2008-04-17
申请号：US11902760
申请日：2007-09-25
申请人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
发明人： Takanobu Takeda , Osamu Watanabe , Satoshi Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Tamotsu Watanabe
IPC分类号： C08G65/34 , C08G73/24 , G03C1/00 , G03C5/00
CPC分类号： G03F7/0397 , Y10S430/106
摘要： There is disclosed a polymer at least comprising repeating units represented by the following general formulae (1) and (2), and the polymer having a mass average molecular weight of 1,000 to 500,000. There can be provided a polymer, and a resist composition, in particular, a chemically amplified positive resist composition that exhibit higher resolution than conventional positive resist compositions, good in-plane dimension uniformity of developed resist patterns on substrates such as mask blanks and high etching resistance.
摘要翻译：公开了至少包含由以下通式（1）和（2）表示的重复单元，聚合物的质均分子量为1,000至500,000的聚合物。可以提供聚合物和抗蚀剂组合物，特别是具有比常规正性抗蚀剂组合物更高分辨率的化学放大正性抗蚀剂组合物，在诸如掩模毛坯和高蚀刻的基底上显影的抗蚀剂图案的良好的面内尺寸均匀性抵抗性。

5. 发明申请

US20100009271A1 Resist patterning process and manufacturing photo mask 有权
标题翻译：抗蚀剂图案化工艺和制造光罩
公开(公告)号：US20100009271A1
公开(公告)日：2010-01-14
申请号：US12457544
申请日：2009-06-15
申请人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
发明人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F7/0392
摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.
摘要翻译：公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。目前存在的问题之一是线边缘粗糙度。为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

6. 发明授权

US09075306B2 Chemically amplified negative resist composition and patterning process 有权
标题翻译：化学放大负光刻胶组合物和图案化工艺
公开(公告)号：US09075306B2
公开(公告)日：2015-07-07
申请号：US13074680
申请日：2011-03-29
申请人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
发明人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
IPC分类号： G03F7/038 , G03F7/20
CPC分类号： G03F7/0382 , G03F7/20
摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
摘要翻译：化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥形成最小化。

7. 发明申请

US20110177464A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：US20110177464A1
公开(公告)日：2011-07-21
申请号：US13074680
申请日：2011-03-29
申请人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
发明人： Takanobu Takeda , Tamotsu Watanabe , Ryuji Koitabashi , Keiichi Masunaga , Akinobu Tanaka , Osamu Watanabe
IPC分类号： G03F7/20
CPC分类号： G03F7/0382 , G03F7/20
摘要： A chemically amplified negative resist composition comprises a polymer comprising recurring hydroxystyrene units and recurring styrene units having electron withdrawing groups substituted thereon. In forming a pattern having a fine feature size of less than 0.1 μm, the composition exhibits a high resolution in that a resist coating formed from the composition can be processed into such a fine size pattern while the formation of bridges between pattern features is minimized.
摘要翻译：化学放大型负性抗蚀剂组合物包含含有重复的羟基苯乙烯单元的聚合物和在其上取代吸电子基团的重复苯乙烯单元。在形成具有小于0.1μm的细小特征尺寸的图案时，组合物表现出高分辨率，因为由组合物形成的抗蚀剂涂层可以加工成这样的精细尺寸图案，同时使图案特征之间的桥接形成最小化。

8. 发明授权

US08343694B2 Photomask blank, resist pattern forming process, and photomask preparation process 有权
标题翻译：光掩模坯料，抗蚀剂图案形成工艺和光掩模制备工艺
公开(公告)号：US08343694B2
公开(公告)日：2013-01-01
申请号：US13207764
申请日：2011-08-11
申请人： Ryuji Koitabashi , Satoshi Watanabe , Takanobu Takeda , Keiichi Masunaga , Tamotsu Watanabe
发明人： Ryuji Koitabashi , Satoshi Watanabe , Takanobu Takeda , Keiichi Masunaga , Tamotsu Watanabe
IPC分类号： G03F9/00
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要翻译：光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少两个氟原子键合到其上。聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。

9. 发明授权

US08110335B2 Resist patterning process and manufacturing photo mask 有权
标题翻译：抗蚀剂图案化工艺和制造光罩
公开(公告)号：US08110335B2
公开(公告)日：2012-02-07
申请号：US12457544
申请日：2009-06-15
申请人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
发明人： Takanobu Takeda , Satoshi Watanabe , Tamotsu Watanabe , Akinobu Tanaka , Keiichi Masunaga , Ryuji Koitabashi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0392
摘要： There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500. One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.
摘要翻译：公开了通过使用包含聚合物的抗蚀剂组合物形成最小线宽度为65纳米或更小的抗蚀剂图案化工艺，所述抗蚀剂组合物作为化学增强抗蚀剂组合物的基础聚合物，其由羟基为由酸不稳定基团和茚单元和/或苊单元保护，其中聚合物的重均分子量为4,000-7,000，特别是4,500-5,500。目前存在的问题之一是线边缘粗糙度。为了通过酸发生剂和碱性化合物来解决这个问题，存在与分辨能力的权衡关系的问题。可以提供具有高分辨率的抗蚀剂组合物，其含有由酸不稳定基团保护的羟基苯乙烯的基础聚合物，具有减少的线边缘粗糙度的图案规则为65纳米或更小的抗蚀剂图案化工艺。

10. 发明申请

US20110294047A1 PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS 有权
标题翻译：光电隔离膜，电阻图案形成工艺和光刻胶制备工艺
公开(公告)号：US20110294047A1
公开(公告)日：2011-12-01
申请号：US13207764
申请日：2011-08-11
申请人： Ryuji Koitabashi , Satoshi Watanabe , Takanobu Takeda , Keiichi Masunaga , Tamotsu Watanabe
发明人： Ryuji Koitabashi , Satoshi Watanabe , Takanobu Takeda , Keiichi Masunaga , Tamotsu Watanabe
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F7/0046 , G03F7/0392
摘要： A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
摘要翻译：光掩模坯料具有抗蚀剂膜，其包含（A）基础树脂，（B）酸产生剂和（C）碱性化合物。抗蚀剂膜还包含（D）包含具有侧链的聚合物的聚合物，所述重链单元具有含有羟基键合的碳原子的氟化烃基和与其键合的连接碳原子的侧链，所述连续碳原子总共至少两个氟原子键合到其上。聚合物（D）的添加确保了整个抗蚀剂膜的均匀显影，能够形成具有高CD均匀性的抗蚀剂图案。

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