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    • 2. 发明授权
    • Scan type exposure apparatus
    • 扫描式曝光装置
    • US5668624A
    • 1997-09-16
    • US358590
    • 1994-12-14
    • Tsuyoshi NarakiKei Nara
    • Tsuyoshi NarakiKei Nara
    • G03F7/20H01L21/027G03B27/72
    • G03F7/70058G03F7/70275G03F7/70358G03F7/70558
    • A scan type exposure apparatus has a mask stage for mounting a mask formed with an exposure pattern in a pattern area; a substrate stage for mounting a rectangular photosensitive substrate; a driving unit for moving the mask stage and the substrate stage in synchronism parallel to one side of the rectangular photosensitive substrate; illumination optical systems for illuminating partial areas of the mask with light beams; and projection optical systems for projecting images of the illuminated areas of the mask onto the photosensitive substrate. The projection optical system projects the light beams passing through the exposure pattern area of the illuminated mask on a central area, excluding peripheral areas, of an exposure area of the photosensitive substrate and projects the light beams passing through an area other than the exposure pattern area of the illuminated mask on the peripheral areas. The scan type exposure apparatus also has an exposure quantity control unit for setting an exposure quantity for the peripheral areas larger than an exposure quantity for the central area.
    • 扫描型曝光装置具有用于将形成有曝光图案的掩模安装在图案区域中的掩模台; 用于安装矩形感光基板的基板台; 驱动单元,用于与所述矩形感光基板的一侧平行地同步地移动所述掩模台和所述基板台; 照明光学系统,用于用光束照射面罩的部分区域; 以及用于将掩模的照射区域的图像投影到感光基板上的投影光学系统。 投影光学系统将通过照射的掩模的曝光图案区域的光束投射到感光基板的曝光区域的除外围区域的中心区域上,并且突出通过除了曝光图案区域之外的区域 的周边区域上的照明面具。 扫描型曝光装置还具有曝光量控制单元,用于设定比中央区域的曝光量大的周边区域的曝光量。
    • 4. 发明授权
    • Exposure method, exposure apparatus, and mask
    • 曝光方法,曝光装置和面罩
    • US06204912B1
    • 2001-03-20
    • US08848394
    • 1997-05-08
    • Makoto TsuchiyaKei NaraNobutaka FujimoriManabu ToguchiMasami Seki
    • Makoto TsuchiyaKei NaraNobutaka FujimoriManabu ToguchiMasami Seki
    • G03B2742
    • G03F7/70066G03F7/70275G03F7/70283G03F7/70358G03F7/70475G03F7/70791
    • An exposure method, exposure apparatus and mask are suitable for manufacturing an active matrix liquid crystal display including, for example, a gate electrode layer and a source/drain electrode layer. A stitching portion between unit patterns in a second layer is offset from the stitching portion in a first layer by a predetermined distance. The stitching portions of the second layer are always positioned over unit patterns of the first layer. Accordingly, the contrast gap that occurs at the stitching portion as a boundary is defined only by an error in the exposure position of the second layer. The contrast gap is not affected by an error in the exposure position of the first layer, unlike the conventional method. Because the contrast gap caused by the error in the exposure position of the first layer is eliminated, the total contrast gap that occurs at the stitching portion as a boundary is significantly reduced.
    • 曝光方法,曝光装置和掩模适用于制造包括例如栅极电极层和源极/漏极电极层的有源矩阵液晶显示器。 第二层中的单元图案之间的缝合部分在第一层中与缝合部分偏移预定距离。 第二层的缝合部分总是位于第一层的单位图案之上。 因此,在作为边界的缝合部分发生的对比度间隙仅由第二层的曝光位置的误差限定。 与传统方法不同,对比度间隙不受第一层的曝光位置的误差的影响。 由于消除了由第一层的曝光位置的误差引起的对比度间隙,所以在作为边界的缝合部分发生的总对比度间隙显着减小。
    • 5. 发明授权
    • Projection exposure apparatus and method having a positional deviation
detection system that employs light from an exposure illumination system
    • 具有使用来自曝光照明系统的光的位置偏差检测系统的投影曝光装置和方法
    • US5912726A
    • 1999-06-15
    • US922598
    • 1997-09-03
    • Manabu ToguchiKei NaraMasaichi MurakamiNobutaka FujimoriToshio Matsuura
    • Manabu ToguchiKei NaraMasaichi MurakamiNobutaka FujimoriToshio Matsuura
    • G03B27/32G03F7/20G03F9/00G03F9/02H01L21/027G03B27/42G03B27/54
    • G03F9/7026G03F7/70241G03F7/70275
    • A projection exposure apparatus includes an illumination optical system for illuminating a plurality of partial areas on a mask. A plurality of projection optical systems each project images of the partial areas thus illuminated onto a photosensitive substrate. A mask table holds the mask. A position detector detects a position of the mask table. A substrate table holds the photosensitive substrate. A plurality of first reference marks are provided on the mask table; each of the plurality of first reference marks are disposed at a position corresponding to each of the plurality of projection optical systems. A plurality of second reference marks are provided on the substrate table; the second reference marks are substantially conjugate with the first reference marks with respect to the projection optical systems and are in a predetermined positional relation with the first reference marks in in-plane directions of the mask and the photosensitive substrate. A positional deviation detector detects positional deviations between the first reference marks and second reference marks when light beams from the illumination optical system are radiated onto the plurality of first reference marks to project the plurality of first reference marks through the projection optical systems onto the plurality of second reference marks. A correcting device corrects imaging characteristics of the projection optical systems, based on the positional deviations. The first reference marks can comprise a single aperture of a plurality of apertures. A reverse-type aperture may be employed. The positional deviation detector may include a single photodetector or a plurality of photodetectors.
    • 投影曝光装置包括用于照亮掩模上的多个部分区域的照明光学系统。 多个投影光学系统各自投影如此照射到感光基片上的部分区域的图像。 掩模台保持面具。 位置检测器检测掩模台的位置。 基板台保持感光基板。 多个第一参考标记设置在掩模台上; 多个第一参考标记中的每一个被布置在与多个投影光学系统中的每一个对应的位置处。 多个第二参考标记设置在衬底台上; 第二参考标记与第一参考标记相对于投影光学系统基本共轭,并且与掩模和感光基板的面内方向上的第一参考标记处于预定的位置关系。 当将来自照明光学系统的光束照射到多个第一参考标记上时,位置偏差检测器检测第一参考标记和第二参考标记之间的位置偏差,以将多个第一参考标记通过投影光学系统突出到多个 第二个参考标记。 校正装置基于位置偏差校正投影光学系统的成像特性。 第一参考标记可以包括多个孔的单个孔。 可以采用反向孔径。 位置偏差检测器可以包括单个光电检测器或多个光电检测器。
    • 6. 发明授权
    • Scanning exposure apparatus and method
    • 扫描曝光装置和方法
    • US5777722A
    • 1998-07-07
    • US654382
    • 1996-05-28
    • Seiji MiyazakiTsuyoshi NarabeKei NaraTomohide HamadaKazuaki SaikiHideji GotoMuneyasu Yokota
    • Seiji MiyazakiTsuyoshi NarabeKei NaraTomohide HamadaKazuaki SaikiHideji GotoMuneyasu Yokota
    • G03F7/20G03F9/00G03B27/42G03B27/32G01B11/00
    • G03F7/70275G03F7/70358G03F9/70
    • A scanning exposure apparatus is arranged to illuminate a mask, to project an image of the mask through a projection optical system onto a photosensitive substrate, and to move the mask and the photosensitive substrate relative to the projection optical system, thereby effecting exposure of an entire surface of the mask on the photosensitive substrate, and the exposure apparatus comprises a position detector which detects a relative positional relation between the mask and the photosensitive substrate; a memory which stores positional information obtained by the position detector; a position correcting device which corrects the relative positional relation between the mask and the photosensitive substrate, based on the positional information read out from the memory device; and a controller which makes the position detector detect the relative positional relation between the mask and the photosensitive substrate while the mask and the photosensitive substrate are carried past a projection region of the projection optical system to an exposure start position, and makes the position correcting device correct the relative positional relation between the mask and the photosensitive substrate, based on the positional information read out from the memory, while the mask and the photosensitive substrate are stopped at the exposure start position and/or during the exposure.
    • 扫描曝光装置被布置为照亮掩模,通过投影光学系统将光掩模的图像投射到感光基板上,并且使掩模和感光基板相对于投影光学系统移动,从而实现整个曝光 感光基板上的掩模表面,曝光装置包括检测掩模和感光基板之间的相对位置关系的位置检测器; 存储器,其存储由所述位置检测器获取的位置信息; 基于从存储装置读出的位置信息来校正掩模和感光基板之间的相对位置关系的位置校正装置; 以及控制器,其使得位置检测器在将掩模和感光基板通过投影光学系统的投影区域到曝光开始位置时检测掩模和感光基板之间的相对位置关系,并使位置校正装置 基于从存储器读出的位置信息,掩模和感光基板在曝光开始位置和/或曝光期间停止时,校正掩模和感光基板之间的相对位置关系。
    • 7. 发明授权
    • Exposure method and apparatus
    • 曝光方法和装置
    • US5623343A
    • 1997-04-22
    • US548402
    • 1995-10-26
    • Kei NaraMasamitsu YanagiharaSeiji Miyazaki
    • Kei NaraMasamitsu YanagiharaSeiji Miyazaki
    • G03F7/20G03F9/00H01L21/027G01B11/00
    • G03F7/70225G03F7/70275G03F7/70358G03F9/70
    • In the first step of an exposure method of the present invention, an alignment optical system is arranged to oppose one of a first mask mark on a photomask and a first substrate mark on a photosensitive substrate, thereby detecting a first deviation amount between the position of the first mask mark and that of the first substrate mark. In the second step, the alignment optical system is arranged to oppose one of a second mask mark on the photomask and a second substrate mark on the photosensitive substrate, thereby detecting a second deviation mark between the position of the second mask mark and that of the second substrate mark. In the third step, correction values for minimizing the first and second deviation amounts are calculated. In the fourth step, the relative positional relationship between the image of an original pattern on the photomask and a shot area on the photosensitive substrate is adjusted on the basis of a correction value. In the fifth step, at least one of the first and second steps is executed subsequent to the fourth step to newly detect the first or second deviation amount. In the sixth step, the first to fifth steps are repeatedly executed until one of the first and second deviation amounts detected in the fifth step falls within a predetermined allowance.
    • 在本发明的曝光方法的第一步骤中,对准光学系统被布置为与光掩模上的第一掩模标记和感光基板上的第一基板标记中的一个相对,从而检测在光敏基板的位置之间的第一偏移量 第一个掩码标记和第一个掩码标记。 在第二步骤中,对准光学系统布置成与光掩模上的第二掩码标记和感光基板上的第二基板标记之一相对,从而检测第二掩模标记的位置与第二掩模标记的位置之间的第二偏移标记 第二基板标记。 在第三步骤中,计算用于使第一和第二偏移量最小化的校正值。 在第四步骤中,基于校正值来调整光掩模上的原始图案的图像与感光基板上的照射区域之间的相对位置关系。 在第五步骤中,在第四步骤之后执行第一和第二步骤中的至少一个,以重新检测第一或第二偏差量。 在第六步骤中,重复执行第一至第五步骤,直到在第五步骤中检测到的第一和第二偏移量之一落入预定余量之内。