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1. 发明申请

US20100012989A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100012989A1
公开(公告)日：2010-01-21
申请号：US12346522
申请日：2008-12-30
申请人： Kee-Jeung LEE , Jae-Sung ROH , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE
发明人： Kee-Jeung LEE , Jae-Sung ROH , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE
IPC分类号： H01L29/78 , H01L21/311 , H01L21/4763
CPC分类号： H01L21/31111 , H01L21/3146 , H01L21/3185 , H01L27/10808 , H01L27/10852 , H01L28/91
摘要： A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.
摘要翻译：半导体器件以及制造该半导体器件的方法，其能够防止在相邻存储节点之间发生倾斜现象。该方法包括：形成多个多层支柱型存储节点，每个堆叠在多个模具层中，其中多层支柱型存储节点的最上层由支撑层固定，蚀刻一部分所述支撑层形成开口，并且通过所述开口提供蚀刻溶液以移除所述多个模具层。通过进行2次以上的处理来沉积和蚀刻成形层的工序，形成多层支柱型存储节点。因此，充分确保期望的电容，并且避免相邻存储节点之间的倾斜现象。

2. 发明申请

US20130022744A1 METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS 审中-公开
标题翻译：使用臭氧反应气体形成金属层的方法
公开(公告)号：US20130022744A1
公开(公告)日：2013-01-24
申请号：US13612505
申请日：2012-09-12
申请人： Deok-Sin KIL , Kee-Jeung LEE , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE , Ja-Yong KIM
发明人： Deok-Sin KIL , Kee-Jeung LEE , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Kyung-Woong PARK , Jeong-Yeop LEE , Ja-Yong KIM
IPC分类号： C23C16/06
CPC分类号： H01L21/28562 , C23C16/045 , C23C16/18 , C23C16/44 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76865 , H01L21/7687 , H01L21/76873 , H01L27/105 , H01L27/11502 , H01L28/65
摘要： A noble metal layer is formed using ozone (O3) as a reaction gas.
摘要翻译：使用臭氧（O 3）作为反应气体形成贵金属层。

3. 发明申请

US20090261454A1 CAPACITOR IN SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件中的电容器及其制造方法
公开(公告)号：US20090261454A1
公开(公告)日：2009-10-22
申请号：US12343379
申请日：2008-12-23
申请人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
发明人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
IPC分类号： H01L27/00 , H01L21/71
CPC分类号： H01L28/65
摘要： A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuXTiYOZ film is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuXTiYOZ film during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.
摘要翻译：电容器包括底部电极，电介质层和衬底上的顶部电极。至少一个底部电极和顶部电极中包含RuXTiYOZ膜，其中x，y和z为正实数。通过顺序形成底部电极，电介质层和衬底上的顶部电极来制造电容器的方法包括在形成底部电极和顶部电极中的至少一个时形成RuXTiYOZ膜，其中x，y和 z是正实数。

4. 发明申请

US20100046138A1 ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件中的电极，电容器及其制造方法
公开(公告)号：US20100046138A1
公开(公告)日：2010-02-25
申请号：US12344182
申请日：2008-12-24
申请人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
发明人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
IPC分类号： H01L23/48 , H01G4/008 , H01G7/00
CPC分类号： C23C16/45525 , C23C16/16 , H01L28/60 , Y10T29/435
摘要： A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.
摘要翻译：半导体器件及其制造方法包括具有杂质的镍层的电极。具有杂质的镍层的电极可以是栅电极或电容电极。具有带有杂质的镍层的电极可以包括纯镍层和具有杂质的镍层的组合。

5. 发明申请

US20120147519A1 ELECTRODE IN SEMICONDUCTOR DEVICE, CAPACITOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件中的电极，电容器及其制造方法
公开(公告)号：US20120147519A1
公开(公告)日：2012-06-14
申请号：US13403541
申请日：2012-02-23
申请人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
发明人： Kwan-Woo DO , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kyung-Woong PARK , Jeong-Yeop LEE
IPC分类号： H01G4/008 , H01L23/482
CPC分类号： C23C16/45525 , C23C16/16 , H01L28/60 , Y10T29/435
摘要： A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.
摘要翻译：半导体器件及其制造方法包括具有杂质的镍层的电极。具有杂质的镍层的电极可以是栅电极或电容电极。具有带有杂质的镍层的电极可以包括纯镍层和具有杂质的镍层的组合。

6. 发明申请

US20090273882A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：电容器及其制造方法
公开(公告)号：US20090273882A1
公开(公告)日：2009-11-05
申请号：US12427117
申请日：2009-04-21
申请人： Kyung-Woong PARK , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Jeong-Yeop LEE
发明人： Kyung-Woong PARK , Kee-Jeung LEE , Deok-Sin KIL , Young-Dae KIM , Jin-Hyock KIM , Kwan-Woo DO , Jeong-Yeop LEE
IPC分类号： H01G4/008 , H01L21/02
CPC分类号： H01L28/91 , H01G4/008 , H01G4/33 , H01L28/65 , H01L28/75
摘要： A capacitor includes a first electrode, a dielectric layer, and a second electrode. The capacitor also includes a buffer layer formed over at least one of an interface between the first electrode and the dielectric layer and an interface between the dielectric layer and the second electrode, wherein the buffer layer includes a compound of a metal element from electrode materials of one of the first and second electrodes and a metal element from materials included in the dielectric layer.
摘要翻译：电容器包括第一电极，电介质层和第二电极。电容器还包括在第一电极和电介质层之间的界面中的至少一个上形成的缓冲层以及介电层和第二电极之间的界面，其中缓冲层包括来自电极材料的金属元素的化合物第一和第二电极中的一个以及包含在电介质层中的材料的金属元件。

7. 发明申请

US20110220898A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20110220898A1
公开(公告)日：2011-09-15
申请号：US13036502
申请日：2011-02-28
申请人： Ju-Won YOON , Il-Jeong LEE , Choong-Youl IM , Young-Dae KIM , Jong-Mo YEO , Do-Hyun KWON , Cheol-Ho YU
发明人： Ju-Won YOON , Il-Jeong LEE , Choong-Youl IM , Young-Dae KIM , Jong-Mo YEO , Do-Hyun KWON , Cheol-Ho YU
IPC分类号： H01L29/04 , H01L21/70
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3248 , H01L51/5218 , H01L2227/323
摘要： An organic light emitting diode (OLED) display that includes a substrate, a thin film transistor, and a pixel electrode. The thin film transistor is formed on the substrate and includes a semiconductor layer, a gate electrode, a source electrode, and a drain electrode. The pixel electrode is electrically connected to the thin film transistor and is formed on the same layer as the source electrode and the drain electrode. The source electrode and the drain electrode include a first conductive layer, and the pixel electrode includes a first conductive layer and a second conductive layer stacked thereon.
摘要翻译：一种包括衬底，薄膜晶体管和像素电极的有机发光二极管（OLED）显示器。薄膜晶体管形成在基板上，并且包括半导体层，栅电极，源电极和漏电极。像素电极电连接到薄膜晶体管，并且形成在与源电极和漏电极相同的层上。源电极和漏电极包括第一导电层，并且像素电极包括堆叠在其上的第一导电层和第二导电层。

8. 发明申请

US20100001639A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS 有权
标题翻译：有机发光显示装置
公开(公告)号：US20100001639A1
公开(公告)日：2010-01-07
申请号：US12427885
申请日：2009-04-22
申请人： Young-Dae KIM , Kyoung-Bo KIM , Moo-Jin KIM , Cheol-Su KIM , Hye-Dong KIM , Ki-Ju IM , Yong-Sung PARK , Gun-Shik KIM , Jun-Sik OH , Brent JANG , Sang-Uk KIM
发明人： Young-Dae KIM , Kyoung-Bo KIM , Moo-Jin KIM , Cheol-Su KIM , Hye-Dong KIM , Ki-Ju IM , Yong-Sung PARK , Gun-Shik KIM , Jun-Sik OH , Brent JANG , Sang-Uk KIM
IPC分类号： H01J1/54
CPC分类号： H01L27/3244 , G06F3/0412 , G06F3/0421 , H01L27/3227 , H01L27/323
摘要： An organic light-emitting display apparatus having a touch panel operation. The organic light-emitting display apparatus includes: a substrate; a display unit disposed on the substrate; an encapsulation substrate disposed above the display unit; a reflection layer formed on the substrate; and a photo sensor interposed between the reflection layer and the encapsulation substrate, and to detect light striking an object disposed on the encapsulation substrate.
摘要翻译：一种具有触摸面板操作的有机发光显示装置。有机发光显示装置包括：基板; 设置在所述基板上的显示单元; 设置在所述显示单元上方的封装基板; 形成在基板上的反射层; 以及插入在所述反射层和所述封装基板之间的光电传感器，并且检测撞击设置在所述封装基板上的物体的光。

9. 发明申请

US20140097419A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US20140097419A1
公开(公告)日：2014-04-10
申请号：US13960221
申请日：2013-08-06
申请人： Young-Dae KIM , Jong-Yun KIM
发明人： Young-Dae KIM , Jong-Yun KIM
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L27/3244 , H01L27/3223 , H01L27/326 , H01L27/3276 , H01L51/56 , H01L2227/323
摘要： An organic light emitting diode (OLED) display includes a substrate, a first signal line on the substrate, a first thin film transistor connected to the first signal line, a second thin film transistor connected to the first thin film transistor, an interlayer insulating layer on the first thin film transistor and the second thin film transistor, a second signal line on the interlayer insulating layer and connected to a source electrode of the first thin film transistor, a third signal line on the interlayer insulating layer and connected to a source electrode of the second thin film transistor, a first electrode on the interlayer insulating layer and connected to a drain electrode of the second thin film transistor, an organic emission layer on the first electrode, and a second electrode placed on the organic emission layer, wherein the third signal line and the first electrode are made of different metals.
摘要翻译：有机发光二极管（OLED）显示器包括衬底，衬底上的第一信号线，连接到第一信号线的第一薄膜晶体管，连接到第一薄膜晶体管的第二薄膜晶体管，层间绝缘层在所述第一薄膜晶体管和所述第二薄膜晶体管上，在所述层间绝缘层上连接到所述第一薄膜晶体管的源电极的第二信号线，所述层间绝缘层上的与所述第一薄膜晶体管的源电极连接的第三信号线，所述第二薄膜晶体管的第一电极与所述第二薄膜晶体管的漏电极连接，所述第一电极上的有机发射层和位于所述有机发射层上的第二电极，第三信号线和第一电极由不同的金属制成。

10. 发明申请

US20160343729A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20160343729A1
公开(公告)日：2016-11-24
申请号：US15142365
申请日：2016-04-29
申请人： Hyun-Jin SHIN , Hong-Suk KIM , Jung-Hwan KIM , Sang-Hoon LEE , Hun-Hyeong LIM , Yong-Seok CHO , Young-Dae KIM , Han-Vit YANG
发明人： Hyun-Jin SHIN , Hong-Suk KIM , Jung-Hwan KIM , Sang-Hoon LEE , Hun-Hyeong LIM , Yong-Seok CHO , Young-Dae KIM , Han-Vit YANG
IPC分类号： H01L27/115 , H01L21/768 , H01L21/02 , H01L21/28 , H01L21/3105 , H01L21/311
CPC分类号： H01L27/11582 , H01L21/0206 , H01L21/28273 , H01L21/28282 , H01L21/3105 , H01L21/31111 , H01L21/76826 , H01L21/76831 , H01L27/11521 , H01L27/11568
摘要： A method of manufacturing a semiconductor device, the method including forming a structure on a substrate, the structure including a metal pattern, at least a portion of the metal pattern being exposed; forming a preliminary buffer oxide layer to cover the structure, a metal oxide layer being formed at the exposed portion of the metal pattern; and deoxidizing the metal oxide layer so that the preliminary buffer oxide layer is transformed into a buffer oxide layer.
摘要翻译：一种制造半导体器件的方法，所述方法包括在衬底上形成结构，所述结构包括金属图案，所述金属图案的至少一部分被暴露; 形成预备的缓冲氧化物层以覆盖该结构，金属氧化物层形成在金属图案的暴露部分; 并且使金属氧化物层脱氧，使得预备缓冲氧化物层转变成缓冲氧化物层。

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