会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • SOLAR CELL SUBSTRATE AND SOLAR CELL USING SAME
    • 太阳能电池基板和使用相同的太阳能电池
    • US20140130859A1
    • 2014-05-15
    • US14126115
    • 2012-06-08
    • Kyoung-Bo KimYoung-Jun ParkJe-Hoon BaekJong-Sang Kim
    • Kyoung-Bo KimYoung-Jun ParkJe-Hoon BaekJong-Sang Kim
    • H01L31/0224
    • H01L31/022425H01L31/03928H01L31/0749Y02E10/541
    • The present invention relates to a solar cell substrate, and to a solar cell using same. The solar cell according to one embodiment of the present invention comprises: a lower substrate; and a lower electrode formed on the lower substrate. The lower electrode is formed of a Mo—X—Na three-component-system compound metal layer. Here, X may be one of Nb, Ni, Si, Ti, W, and Cr. The solar cell according to another embodiment of the present invention may comprise: a solar cell substrate including a lower substrate and a Mo—X—Na three-component-system compound metal layer that is a lower electrode formed on the lower substrate; a light-absorption layer formed on the solar cell substrate; a buffer layer formed on the light-absorption layer; a transparent window formed on the buffer layer; and an upper electrode formed on the transparent window.
    • 太阳能电池基板及其制造方法技术领域本发明涉及太阳能电池基板,太阳能电池。 根据本发明的一个实施例的太阳能电池包括:下基板; 和形成在下基板上的下电极。 下电极由Mo-X-Na三组分体系复合金属层形成。 这里,X可以是Nb,Ni,Si,Ti,W和Cr中的一种。 根据本发明的另一实施例的太阳能电池可以包括:太阳能电池基板,其包括下基板和Mo-X-Na三组分系统复合金属层,其是形成在下基板上的下电极; 形成在太阳能电池基板上的光吸收层; 形成在所述光吸收层上的缓冲层; 形成在缓冲层上的透明窗; 和形成在透明窗上的上电极。
    • 5. 发明申请
    • CHEMICAL VAPOR DEPOSITION APPARATUS AND PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS
    • 化学蒸气沉积装置和等离子体增强化学气相沉积装置
    • US20080295772A1
    • 2008-12-04
    • US12122904
    • 2008-05-19
    • Yong-Woo PARKKyoung-Bo KimMoo-Jin Kim
    • Yong-Woo PARKKyoung-Bo KimMoo-Jin Kim
    • C23C16/44
    • C23C16/4401H01J37/32623H01J37/32697
    • A chemical vapor deposition (CVD) apparatus and a plasma enhanced chemical vapor deposition (PECVD) apparatus that reduce the number of fine particles inside a chamber. The CVD and the PECVD apparatuses each include a chamber; a gas injection unit that injects a gas into the chamber; a gas exhaust unit that exhausts the gas to the outside of the chamber, and is positioned facing the gas injection unit; a film formation unit that incorporates a film formation region on which a film is formed from the gas, and is positioned between the gas injection unit and the gas exhaust unit; and a electrostatic induction unit, which is positioned around a region corresponding to the film formation region in order not to overlap with the film formation region, and is connected to a voltage source that is insulated from the chamber.
    • 化学气相沉积(CVD)装置和等离子体增强化学气相沉积(PECVD)装置,其减少室内细颗粒的数量。 CVD和PECVD装置各自包括室; 气体注入单元,其将气体注入到所述室中; 气体排出单元,其将气体排出到室的外部,并且被定位成面向气体注入单元; 成膜单元,其包括从气体形成有膜的成膜区域,并且位于气体注入单元和排气单元之间; 以及静电感应单元,其被设置在与成膜区域相对应的区域周围,以便不与成膜区域重叠,并且连接到与腔室绝缘的电压源。
    • 9. 发明申请
    • Organic light emitting diode display and method of manufacturing the same
    • 有机发光二极管显示器及其制造方法
    • US20110049523A1
    • 2011-03-03
    • US12805702
    • 2010-08-16
    • Jong-Hyun ChoiJune-Woo LeeKwang-Hae KimKyoung-Bo Kim
    • Jong-Hyun ChoiJune-Woo LeeKwang-Hae KimKyoung-Bo Kim
    • H01L33/00H01L21/02H01L51/50
    • H01L27/1251H01L27/1225H01L27/3262
    • An OLED display including a substrate main body; a first gate electrode and a second semiconductor layer; a gate insulating layer on the first gate electrode and the second semiconductor layer; a first semiconductor layer and a second gate electrode overlying the first gate electrode and the second semiconductor layer, respectively; etching stopper layers contacting portions of the first semiconductor layer; an interlayer insulating layer on the first semiconductor layer and the second gate electrode and including contact holes exposing the plurality of etching stopper layers, respectively; a first source electrode and a first drain electrode on the interlayer insulating layer and the contact holes being indirectly connected to the first semiconductor layer via the etching stopper layers or directly connected to the first semiconductor layer; and a second source electrode and a second drain electrode on the interlayer insulating layer being connected to the second semiconductor layer.
    • 一种OLED显示器,包括:基板主体; 第一栅电极和第二半导体层; 在第一栅电极和第二半导体层上的栅极绝缘层; 分别覆盖所述第一栅电极和所述第二半导体层的第一半导体层和第二栅电极; 蚀刻阻挡层接触第一半导体层的部分; 在所述第一半导体层和所述第二栅电极上的层间绝缘层,并且包括分别暴露所述多个蚀刻停止层的接触孔; 层间绝缘层上的第一源电极和第一漏电极,并且所述接触孔经由所述蚀刻停止层间接地连接到所述第一半导体层,或者直接连接到所述第一半导体层; 并且所述层间绝缘层上的第二源极和第二漏极连接到所述第二半导体层。