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1. 发明申请

US20100048032A1 PROCESS GAS DELIVERY FOR SEMICONDUCTOR PROCESS CHAMBER 有权
标题翻译：用于半导体工艺室的工艺气体输送
公开(公告)号：US20100048032A1
公开(公告)日：2010-02-25
申请号：US12197029
申请日：2008-08-22
申请人： KEDARNATH SANGAM , Anh N. Nguyen
发明人： KEDARNATH SANGAM , Anh N. Nguyen
IPC分类号： H01L21/31 , F16K11/10 , C23C16/00
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , C23C16/45582 , H01L21/31645 , Y10T117/10 , Y10T137/87249
摘要： Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits; each gas conduit having an inlet and an outlet for facilitating the flow of a gas therethrough and into the first volume, wherein each gas conduit has a second volume less than the first volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel.
摘要翻译：本文提供了用于气体输送组件的方法和装置。在一些实施例中，气体输送组件包括具有第一体积和一个或多个气体导管的气体入口漏斗; 每个气体管道具有入口和出口，用于促进气体流过其中并进入第一容积，其中每个气体管道具有小于第一容积的第二容积，并且其中每个气体导管的横截面从靠近所述出口的靠近所述入口的第二横截面的第一横截面，其中所述第二横截面是非圆形的。在一些实施例中，每个导管具有与进气漏斗的中心轴线相交的纵向轴线。

2. 发明授权

US08382897B2 Process gas delivery for semiconductor process chambers 有权
标题翻译：半导体处理室的工艺气体输送
公开(公告)号：US08382897B2
公开(公告)日：2013-02-26
申请号：US13456189
申请日：2012-04-25
申请人： Kedarnath Sangam , Anh N. Nguyen
发明人： Kedarnath Sangam , Anh N. Nguyen
IPC分类号： C30B25/14
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , C23C16/45582 , H01L21/31645 , Y10T117/10 , Y10T137/87249
摘要： Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.
摘要翻译：本文提供了将气体输送到处理室的方法。在一些实施例中，方法可以包括使工艺气体流过一个或多个气体导管，每个气体管道具有入口和出口，用于促进气体流过气体导管并进入具有第二体积的气体入口漏斗，其中每个气体管道具有小于第二容积的第一容积，并且其中每个气体导管具有从靠近入口的第一横截面增加到靠近出口的第二横截面的横截面，但不包括气体入口漏斗和气体导管，并且其中第二横截面是非圆形的; 以及经由进气漏斗将工艺气体输送到衬底。

3. 发明授权

US08187381B2 Process gas delivery for semiconductor process chamber 有权
标题翻译：半导体处理室的工艺气体输送
公开(公告)号：US08187381B2
公开(公告)日：2012-05-29
申请号：US12197029
申请日：2008-08-22
申请人： Kedarnath Sangam , Anh N. Nguyen
发明人： Kedarnath Sangam , Anh N. Nguyen
IPC分类号： C30B35/00
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , C23C16/45582 , H01L21/31645 , Y10T117/10 , Y10T137/87249
摘要： Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits; each gas conduit having an inlet and an outlet for facilitating the flow of a gas therethrough and into the first volume, wherein each gas conduit has a second volume less than the first volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel.
摘要翻译：本文提供了用于气体输送组件的方法和装置。在一些实施例中，气体输送组件包括具有第一体积和一个或多个气体导管的气体入口漏斗; 每个气体管道具有入口和出口，用于促进气体流过其中并进入第一容积，其中每个气体管道具有小于第一容积的第二容积，并且其中每个气体导管的横截面从靠近所述出口的靠近所述入口的第二横截面的第一横截面，其中所述第二横截面是非圆形的。在一些实施例中，每个导管具有与进气漏斗的中心轴线相交的纵向轴线。

4. 发明申请

US20110223334A1 ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT 有权
标题翻译：原子层沉积室多重注入
公开(公告)号：US20110223334A1
公开(公告)日：2011-09-15
申请号：US13043189
申请日：2011-03-08
申请人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
发明人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45574 , C23C16/4408 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01J37/32449 , H01L21/0228 , H01L21/28194 , H01L21/3141
摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，室盖组件包括具有上部和下部的通道，其中通道沿着中心轴线延伸，壳体具有内部区域并且至少部分地限定两个或更多个环形通道，插入件设置在所述内部区域并且限定所述上部，所述上部与所述两个或多个环形通道流体联接，以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

5. 发明授权

US06660126B2 Lid assembly for a processing system to facilitate sequential deposition techniques 失效
公开(公告)号：US06660126B2
公开(公告)日：2003-12-09
申请号：US09798251
申请日：2001-03-02
申请人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
发明人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
IPC分类号： H05H100
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4411 , C23C16/452 , H01L21/67017
摘要： A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

6. 发明授权

US06299692B1 Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition 失效
标题翻译：用于在化学气相沉积期间将各种前体材料蒸发并流动到半导体晶片上
公开(公告)号：US06299692B1
公开(公告)日：2001-10-09
申请号：US09621335
申请日：2000-07-21
申请人： Vincent Ku , Ming Xi , Xiaoxiong Yuan , Anzhong Chang , Anh N. Nguyen
发明人： Vincent Ku , Ming Xi , Xiaoxiong Yuan , Anzhong Chang , Anh N. Nguyen
IPC分类号： C23C1600
CPC分类号： C23C16/4485
摘要： A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.
摘要翻译：将用于在低压下均匀流动到处理室中的蒸发器头部具有用于将金属和其它层沉积到半导体上的蒸发的前体化合物具有具有中心轴，纵向腔，输入端和输出端的灯泡状体。空腔具有用于接收蒸发的前体化合物流的开口。存在多个用于蒸汽流过头部的通道，每个通道具有长度和直径。它们相对于从中心轴线到中心轴线的倾斜角度，沿着腔体的周边和周围径向延伸，如同轮的轮辐一样沿径向延伸到头部的锥形输出表面。空腔具有良好的底部，用于捕获前体化合物的任何液滴或颗粒，并防止它们离开头部，除了作为蒸气。多个通道具有足够大的直径，使得在流过头部的蒸气中只有低压降。

7. 发明授权

US08309874B2 Gas heater 有权
标题翻译：燃气加热器
公开(公告)号：US08309874B2
公开(公告)日：2012-11-13
申请号：US12122616
申请日：2008-05-16
申请人： Tao Hou , Son T. Nguyen , Kenric Choi , Anh N. Nguyen
发明人： Tao Hou , Son T. Nguyen , Kenric Choi , Anh N. Nguyen
IPC分类号： H05B1/00
CPC分类号： F28F7/02
摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.
摘要翻译：一种用于加热或冷却流体的方法和装置。连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。在薄间隙附近的热插入物通过出口管道流出或流出流体。

8. 发明授权

US07222636B2 Electronically actuated valve 有权
标题翻译：电动阀
公开(公告)号：US07222636B2
公开(公告)日：2007-05-29
申请号：US10644598
申请日：2003-08-20
申请人： Anh N. Nguyen , Joseph Yudovsky , Mark A. Alexander , Hungsuk A. Yoon , Chiliang L. Chen
发明人： Anh N. Nguyen , Joseph Yudovsky , Mark A. Alexander , Hungsuk A. Yoon , Chiliang L. Chen
IPC分类号： F16K31/06
CPC分类号： F16K31/0655 , F16K31/0675 , Y10T137/0419 , Y10T137/4259
摘要： The present invention relates to a method and apparatus for delivery of reactants to a substrate processing chamber. An electronically controlled valve assembly is provided for rapid delivery of pulses of reactants to the chamber. The valve assembly comprises a valve body having a valve seat, and at least one gas inlet and one gas outlet below the seat. The piston is selectively movable within the valve body to open and close the valve. In order to actuate the valve assembly, current is sent to a solenoid coil within the valve body. The solenoid coil generates a magnetic field that acts on an adjacent magnetic member. The solenoid coil, magnetic member and piston are arranged such that relative movement of the coil and magnetic member cause the piston to be moved relative to the valve seat.
摘要翻译：本发明涉及一种将反应物递送到基板处理室的方法和装置。提供电子控制阀组件，用于将反应物的脉冲快速输送到室。阀组件包括具有阀座的阀体，以及座下方的至少一个气体入口和一个气体出口。活塞可选择性地在阀体内移动以打开和关闭阀。为了致动阀组件，电流被送到阀体内的螺线管线圈。螺线管线圈产生作用在相邻磁性部件上的磁场。电磁线圈，磁性构件和活塞被布置成使得线圈和磁性构件的相对运动导致活塞相对于阀座移动。

9. 发明授权

US06364954B2 High temperature chemical vapor deposition chamber 有权
标题翻译：高温化学气相沉积室
公开(公告)号：US06364954B2
公开(公告)日：2002-04-02
申请号：US09211998
申请日：1998-12-14
申请人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/45514 , C23C16/45574 , C23C16/4584 , C23C16/5096
摘要： An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200° C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.
摘要翻译：一种用于晶片处理的装置，其包括通过隔离销彼此热隔离的室主体和加热衬套。在晶片加工期间，例如通过四氯化钛和氨之间的热反应沉积氮化钛膜，通过加热的支撑基座将晶片基板加热至600-700℃范围内的反应温度。腔室衬里和内部室壁保持在150-250℃之间的温度，以防止在室内沉积不期望的副产物。这有助于室清洁程序，其可以使用原位氯基方法进行。加热的衬套和腔体之间的良好的隔热能使室外保持在60-65℃的安全工作温度。加热排气组件还与处理室结合使用以除去废气和反应副产品。使用外部加热器将排气组件保持在约150-200℃的温度下，以使排气组件的内表面上的不期望的沉积物最小化。

10. 发明授权

US09766022B2 Gas heater 有权
公开(公告)号：US09766022B2
公开(公告)日：2017-09-19
申请号：US13667314
申请日：2012-11-02
申请人： Tao Hou , Son T. Nguyen , Kenric T. Choi , Anh N. Nguyen
发明人： Tao Hou , Son T. Nguyen , Kenric T. Choi , Anh N. Nguyen
IPC分类号： H05B1/00 , F28F7/02
CPC分类号： F28F7/02
摘要： A method and apparatus for heating or cooling a fluid is provided. In one embodiment, a heat exchanger is provided. The heat exchanger includes a first subassembly comprising an insert. The insert comprises a body having a blind passage formed axially in the body, a plurality of nozzles formed therein, and a first plurality of heat exchange elements disposed within the body. The heat exchanger also comprises a second subassembly comprising a sleeve and a second plurality of heat exchange elements disposed within the sleeve, wherein the insert is sealably engaged inside the sleeve and the insert and the sleeve cooperatively define a thin gap, and wherein each of the plurality of nozzles are disposed radially between the blind passage and the thin gap.

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