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    • 5. 发明申请
    • PLANT SECURITY MANAGING DEVICE, MANAGING METHOD AND MANAGING PROGRAM
    • 工厂安全管理设备,管理方法和管理程序
    • US20130179976A1
    • 2013-07-11
    • US13720214
    • 2012-12-19
    • Keishin SAITOHiroshi InadaTakahiro Mori
    • Keishin SAITOHiroshi InadaTakahiro Mori
    • G06F21/56
    • G06F21/561G06F21/56
    • A technology is provided which ensures a high security without affecting a plant operation. A plant security managing device includes a determining unit that determines which one of control units multiplexed as a service system and a standby system associated with monitoring and controlling of a plant is the standby system, a security processing unit that performs a security process for detecting the presence/absence of a security abnormality on the control unit that is the standby system, and a change instructing unit that outputs an instruction for changing the control unit that is the standby system and the control unit that is the service system with each other after the completion of the security process by the security processing unit.
    • 提供了一种确保高安全性而不影响设备运行的技术。 工厂安全管理装置包括确定单元,其确定多路复用为服务系统的控制单元中的哪一个以及与工厂的监视和控制相关联的备用系统是备用系统;安全处理单元,执行用于检测 在作为备用系统的控制单元上存在/不存在安全异常;以及改变指示单元,其在经过所述待机系统的控制单元之后输出用于改变作为所述备用系统的控制单元和作为所述服务系统的所述控制单元的指令 安全处理单元完成安全过程。
    • 6. 发明授权
    • Gate driving circuit for power semiconductor element
    • 功率半导体元件的栅极驱动电路
    • US08466734B2
    • 2013-06-18
    • US13183991
    • 2011-07-15
    • Takahiro Mori
    • Takahiro Mori
    • H03K17/30
    • H03K17/0828
    • A gate driving circuit for driving a power semiconductor element can include a MSINK that is an n-channel metal-oxide silicon field-effect transistor (MOSFET) with a low resistance value for rapidly drawing out the charges accumulated on the gate of an insulated gate bipolar transistor (IGBT), and a MSOFT that is an n-channel MOSFET with a high resistance value for slowly drawing out the charges. By shifting the time for turning ON of these MOSFETs, soft interruption can be performed rapidly and surely when overcurrent or short circuit current flows in the IGBT. Therefore, device breakdown is minimized or avoided and noise generation is suppressed.
    • 用于驱动功率半导体元件的栅极驱动电路可以包括具有低电阻值的n沟道金属氧化物硅场效应晶体管(MOSFET)的MSINK,用于快速抽出积聚在绝缘栅的栅极上的电荷 双极晶体管(IGBT)和MSOFT,它是一个具有高电阻值的n沟道MOSFET,用于缓慢提取电荷。 通过移动这些MOSFET的导通时间,可以在IGBT中过流或短路电流流动时,快速且可靠地执行软中断。 因此,器件击穿最小化或避免,噪声产生被抑制。