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1. 发明授权

US4202958A Process for the preparation of polyolefins using a reduced vanadium halide catalyst 失效
标题翻译：使用还原的卤化钒催化剂制备聚烯烃的方法
公开(公告)号：US4202958A
公开(公告)日：1980-05-13
申请号：US865196
申请日：1977-12-28
申请人： Kazuo Yamaguchi , Toru Tanaka , Shigeaki Okano , Nobuo Enokido , Masatoshi Suzuki
发明人： Kazuo Yamaguchi , Toru Tanaka , Shigeaki Okano , Nobuo Enokido , Masatoshi Suzuki
IPC分类号： C08F4/00 , C08F4/60 , C08F10/00 , C08F4/68
CPC分类号： C08F10/00
摘要： A process for the preparation of polyolefins, polymerizing olefins with use of a solid catalyst separated from a reaction mixture which is obtained by reducing a halogen-containing compound of vanadium with an organic aluminum compound in the presence of an ether and an organic aluminum compound.
摘要翻译：一种制备聚烯烃的方法，使用从反应混合物中分离的固体催化剂聚合烯烃，所述反应混合物是通过在有机铝化合物存在下用有机铝化合物还原含钒化合物而获得的。

2. 发明授权

US3989881A Catalyst and process for polymerization of olefin 失效
标题翻译：催化剂和烯烃聚合方法
公开(公告)号：US3989881A
公开(公告)日：1976-11-02
申请号：US565196
申请日：1975-04-04
申请人： Kazuo Yamaguchi , Natsuki Kanoh , Toru Tanaka , Nobuo Enokido , Atsushi Murakami , Seiji Yoshida
发明人： Kazuo Yamaguchi , Natsuki Kanoh , Toru Tanaka , Nobuo Enokido , Atsushi Murakami , Seiji Yoshida
IPC分类号： C01G23/00 , C01G31/00 , C08F4/02 , C08F4/10 , C08F4/16 , C08F4/20 , C08F4/62 , C08F10/00 , C08F10/02
CPC分类号： C08F4/022 , C01G23/002 , C01G31/006 , C08F10/00 , C01P2006/60 , C01P2006/80
摘要： A solid catalytic complex for the polymerization of an olefin has the formula:[MgM.sub.1-n ]X.sub.m . xYwherein M represents a transition metal selected from the group consisting of titanium and vanadium; X represents a halogen atom; Y represents an aliphatic ether or a cyclic ether; n is 0.01 - 0.99; 2
摘要翻译：用于烯烃聚合的固体催化络合物具有下式：

3. 发明授权

US4525554A Process for polymerizing olefin 失效
标题翻译：烯烃聚合方法
公开(公告)号：US4525554A
公开(公告)日：1985-06-25
申请号：US240480
申请日：1981-03-04
申请人： Toru Tanaka , Kazutoshi Iwatani , Nobuo Enokido , Atsushi Murakami , Yukio Yamaguchi
发明人： Toru Tanaka , Kazutoshi Iwatani , Nobuo Enokido , Atsushi Murakami , Yukio Yamaguchi
IPC分类号： C08F10/00 , C08F4/02
CPC分类号： C08F10/00
摘要： In a process for polymerizing an olefin in the presence of a catalyst system combining an organoaluminum compound with a hydrocarbon insoluble solid catalytic component prepared by treating a hydrocarbon solution containing a magnesium compound, and a titanium compound with an aluminum halide having the formulaAlR.sub.l.sup.1 X.sub.3-l.sup.1(R.sup.1 represents an alkyl, aryl or cycloalkyl group and X.sup.1 represents a halogen atom, and l is 1.ltoreq.l.ltoreq.2),an improvement characterized in that the magnesium compound is a compound having the formulaMg(OR.sup.2).sub.m X.sub.2-m.sup.2(R.sup.2 represents an alkyl, aryl or cycloalkyl group; X.sup.2 represents a halogen atom; and m is 1 or 2) and the titanium compound is a compound having the formulaTi(OR.sup.3).sub.n X.sub.4-n.sup.3(R.sup.3 represents an alkyl, aryl or cycloalkyl group; X.sup.3 represents a halogen atom; n is 1, 2 or 3).
摘要翻译：在将有机铝化合物与通过处理含有镁化合物的烃溶液制备的烃不溶性固体催化剂组分的催化剂体系和具有式AlRl 1 X 3 -11的卤化铝的钛化合物的催化剂体系聚合的方法中，（R1表示烷基，芳基或环烷基，X1表示卤素原子，l表示1〜2），其特征在于镁化合物为具有式Mg（OR 2）m X 2的化合物 -m2（R2表示烷基，芳基或环烷基; X2表示卤素原子，m表示1或2），钛化合物是具有式Ti（OR 3）n X 4-n 3的化合物（R3表示烷基，芳基或环烷基; X3表示卤素原子; n为1,2或3）。

4. 发明授权

US4151337A Process for preparing polyolefin 失效
标题翻译：聚烯烃的制备方法
公开(公告)号：US4151337A
公开(公告)日：1979-04-24
申请号：US800177
申请日：1977-05-25
申请人： Natsuki Kanoh , Toru Tanaka , Nobuo Enokido
发明人： Natsuki Kanoh , Toru Tanaka , Nobuo Enokido
IPC分类号： C08F4/00 , B01J27/08 , B01J31/26 , C08F4/60 , C08F10/00 , C08F4/66 , C08F10/02
CPC分类号： B01J31/143 , B01J27/08 , B01J31/2208 , B01J31/36 , B01J31/38 , C08F10/00 , B01J2231/12 , B01J2531/46 , B01J2531/56 , B01J27/10
摘要： Polyolefin is prepared by polymerizing an olefin by using a catalyst system combining an auxiliary catalytic component of an organoaluminum compound and a solid catalytic component obtained by reacting a mixture of a vanadium trichloride ether complex and a titanium trichloride ether complex with an aluminum halide and/or a boron halide.
摘要翻译：聚烯烃是通过使用将有机铝化合物的辅助催化剂组分和通过使三氯化铝复合物和三氯化钛配合物的混合物与卤化铝和/或卤化硼。

5. 发明授权

US4226964A Process for polymerizing olefin 失效
标题翻译：烯烃聚合方法
公开(公告)号：US4226964A
公开(公告)日：1980-10-07
申请号：US006386
申请日：1979-01-25
申请人： Toru Tanaka , Shigeaki Okano , Eiji Tanaka
发明人： Toru Tanaka , Shigeaki Okano , Eiji Tanaka
IPC分类号： C08F4/64 , C08F10/00 , C08F4/02 , C08F10/02
CPC分类号： C08F10/00
摘要： In a process for polymerizing an olefin in the presence of a catalyst system combining an organoaluminum compound with a hydrocarbon insoluble solid catalytic component prepared by treating a hydrocarbon solution containing a magnesium compound, a titanium compound and a zirconium compound with an aluminum halide having the formulaAlR.sup.1 X.sub.2.sup.1(R.sup.1 represents an alkyl, aryl or cycloalkyl group and X.sup.1 represents a halogen atom), an improvement characterized in that the magnesium compound is a compound having the formulaMg(OR.sup.2).sub.l X.sub.2-l.sup.2(R.sup.2 represents an alkyl, aryl or cycloalkyl group; X.sup.2 represents a halogen atom; and l is 1 or 2) and the titanium compound is a compound having the formulaTi(OR.sup.3).sub.n X.sub.4-n.sup.3(R.sup.3 represents an alkyl, aryl or cycloalkyl group; X.sup.3 represents a halogen atom; n is 1, 2 or 3) and the zirconium compound is a compound having the formulaZr(OR.sup.4).sub.m X.sub.4-m.sup.4(R.sup.4 represents an alkyl, aryl or cycloalkyl group; X.sup.4 represents a halogen atom; m is 1, 2 or 3) or an alcohol solution of a compound having the formulaZrX.sub.4.sup.4(X.sup.4 is defined above).
摘要翻译：在将有机铝化合物与不溶于烃的固体催化剂组合的催化剂体系存在下进行聚合的方法中，所述催化剂体系是通过用具有式（I）的卤化铝处理包含镁化合物，钛化合物和锆化合物的烃溶液 AlR1X21（R1表示烷基，芳基或环烷基，X1表示卤素原子），其特征在于镁化合物为具有式Mg（OR 2）1 X 2 -12的化合物（R 2表示烷基，芳基或环烷基 ; X 2表示卤素原子，l为1或2），钛化合物为具有式Ti（OR 3）n X 4-n 3的化合物（R 3表示烷基，芳基或环烷基; X 3表示卤素原子; n表示 1,2或3），并且锆化合物是具有式Zr（OR 4）m X 4-m 4的化合物（R 4表示烷基，芳基或环烷基; X 4表示卤素原子; m为1,2或3）或酒精溶液a 具有式ZrX44（X4如上定义）的化合物。

6. 发明授权

US09318764B2 Proton conducting polymer membrane, membrane-electrode assembly using same, and polymer electrolyte fuel cell 有权
标题翻译：质子导电聚合物膜，使用其的膜 - 电极组件和聚合物电解质燃料电池
公开(公告)号：US09318764B2
公开(公告)日：2016-04-19
申请号：US14007241
申请日：2012-04-13
申请人： Toru Tanaka , Katsutoshi Suzuki , Haruhiko Komoriya , Arata Takahashi , Saori Itabashi
发明人： Toru Tanaka , Katsutoshi Suzuki , Haruhiko Komoriya , Arata Takahashi , Saori Itabashi
IPC分类号： H01M8/10 , H01B1/12 , C08J5/22
CPC分类号： H01M8/1039 , C08J5/2225 , H01B1/122 , H01M8/1011 , H01M8/1023 , H01M8/1037 , H01M8/1053 , Y02E60/523 , Y10T156/10
摘要： Disclosed is a proton conducting polymer membrane formed by laminating a plurality of solid electrolyte membranes. This proton conducting polymer membrane is one prepared by laminating at least one layer of a solid electrolyte membrane formed by using a resin having a bis(perfluoroalkanesulfonyl)methide group in the chemical structure. This solid electrolyte membrane has a superior proton conductivity without transmitting the fuel (methanol or hydrogen).
摘要翻译：公开了通过层叠多个固体电解质膜形成的质子传导性聚合物膜。该质子传导性聚合物膜是通过层叠通过在化学结构中使用具有双（全氟烷基磺酰基）甲硅烷基的树脂形成的至少一层固体电解质膜而制备的。该固体电解质膜在不传输燃料（甲醇或氢）的情况下具有优异的质子传导性。

7. 发明授权

US09223501B2 Computer system and virtual server migration control method for computer system 有权
标题翻译：计算机系统和虚拟服务器迁移控制方法
公开(公告)号：US09223501B2
公开(公告)日：2015-12-29
申请号：US13511102
申请日：2012-04-23
申请人： Atsumi Terayama , Akihisa Nagami , Toru Tanaka , Yasunori Kaneda , Yoshinori Okami
发明人： Atsumi Terayama , Akihisa Nagami , Toru Tanaka , Yasunori Kaneda , Yoshinori Okami
IPC分类号： G06F3/06 , G06F17/30 , G06F12/08 , G06F9/455
CPC分类号： G06F3/061 , G06F3/0619 , G06F3/0647 , G06F3/065 , G06F3/0662 , G06F3/067 , G06F9/45533
摘要： When migrating a virtual server between a plurality of physical servers, a pre-migration connection relationship between the virtual server and a storage area used by the virtual server is maintained after the migration of the virtual server by using a cooperative mechanism between a plurality of storage apparatuses even if the storage area used by the virtual server is migrated between the plurality of storage apparatuses. A computer system and virtual server migration control method for the computer system is described.
摘要翻译：当在多个物理服务器之间迁移虚拟服务器时，在虚拟服务器通过使用多个存储器之间的协作机制迁移之后维护虚拟服务器与虚拟服务器使用的存储区域之间的预迁移连接关系即使虚拟服务器使用的存储区域在多个存储装置之间迁移也是如此。描述了用于计算机系统的计算机系统和虚拟服务器迁移控制方法。

8. 发明授权

US09153525B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09153525B2
公开(公告)日：2015-10-06
申请号：US14073059
申请日：2013-11-06
申请人： Toru Tanaka
发明人： Toru Tanaka
IPC分类号： H01L23/48 , H01L23/495 , H01L23/00
CPC分类号： H01L23/49513 , H01L23/49562 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/33 , H01L2224/04026 , H01L2224/05624 , H01L2224/06181 , H01L2224/2908 , H01L2224/29111 , H01L2224/29118 , H01L2224/29339 , H01L2224/29355 , H01L2224/32245 , H01L2224/33181 , H01L2224/83825 , H01L2224/8384 , H01L2924/0002 , H01L2924/0132 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15747 , H01L2924/351 , H01L2924/01014 , H01L2924/0105 , H01L2924/01051 , H01L2924/01013 , H01L2924/0103 , H01L2924/01029 , H01L2924/01028 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor element that includes an electrode layer on a surface of the semiconductor element; a low-strength layer that is provided on a surface of the electrode layer; a bonding layer that is provided on a surface of the low-strength layer; and a conductive plate that is provided on a surface of the bonding layer. Strength of the bonding layer is higher than strength of the electrode layer, and strength of the low-strength layer is lower than the strength of the electrode layer.
摘要翻译：半导体器件包括：半导体元件，其包括在半导体元件的表面上的电极层; 设置在电极层的表面上的低强度层; 设置在低强度层的表面上的接合层; 以及设置在所述接合层的表面上的导电板。接合层的强度高于电极层的强度，低强度层的强度低于电极层的强度。

9. 发明申请

US20130219138A1 STORAGE SYSTEM, MANAGEMENT SERVER, STORAGE APPARATUS, AND DATA MANAGEMENT METHOD 有权
标题翻译：存储系统，管理服务器，存储设备和数据管理方法
公开(公告)号：US20130219138A1
公开(公告)日：2013-08-22
申请号：US13496036
申请日：2012-02-16
申请人： Hiroshi Nasu , Toru Tanaka
发明人： Hiroshi Nasu , Toru Tanaka
IPC分类号： G06F12/16
CPC分类号： G06F3/0608 , G06F3/061 , G06F3/0646 , G06F3/0662 , G06F3/067 , G06F11/1451 , G06F2201/84
摘要： A snapshot volume is migrated by using a primary volume of a migration destination storage apparatus.The management server comprises a controller for generational management, by means of the snapshot volumes, of differential data for the logical volume which is the parent volume of the snapshot volume, and, if an instruction to copy a snapshot volume of a designated generation is received and a snapshot volume prior to the designated generation of the copy instruction-target snapshot volume exists, the controller copies the differential data between the designated-generation snapshot volume and the existing snapshot volume, and associates the copied differential data with the existing snapshot volume.
摘要翻译：使用迁移目的地存储设备的主卷迁移快照卷。管理服务器包括用于通过快照卷对作为快照卷的父卷的逻辑卷的差异数据进行代数管理的控制器，以及如果接收到复制指定代的快照卷的指令并且存在指定生成复制指令目标快照卷之前的快照卷，控制器将复制指定代快照卷与现有快照卷之间的差异数据，并将复制的差异数据与现有快照卷相关联。

10. 发明授权

US08287645B2 Production process for high purity polycrystal silicon and production apparatus for the same 失效
标题翻译：高纯多晶硅生产工艺及生产设备相同
公开(公告)号：US08287645B2
公开(公告)日：2012-10-16
申请号：US13013270
申请日：2011-01-25
申请人： Shuichi Honda , Minoru Yasueda , Satoshi Hayashida , Masatsugu Yamaguchi , Toru Tanaka
发明人： Shuichi Honda , Minoru Yasueda , Satoshi Hayashida , Masatsugu Yamaguchi , Toru Tanaka
IPC分类号： C30B25/14
CPC分类号： C23C16/24 , B01J4/002 , B01J19/2415 , B01J2219/00135 , B01J2219/00159 , B01J2219/185 , C01B33/03 , Y10T117/10
摘要： In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
摘要翻译：在本发明的高纯度多晶硅的制造方法中，使用具有设置在上部的氯化硅气体供给喷嘴和还原剂气体供给喷嘴的立式反应器和废气排出管，氯化物气体和还原剂气体通过氯化硅气体与还原剂气体的反应而供入到反应器中以在氯化硅气体供给喷嘴的尖端处形成多晶硅，并且允许多晶硅生长从氯化硅气体供给喷嘴的前端朝向其下部。

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