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1. 发明授权

US4945009A Electroluminescence device 失效
标题翻译：电致发光器件
公开(公告)号：US4945009A
公开(公告)日：1990-07-31
申请号：US166986
申请日：1988-03-11
申请人： Kazuo Taguchi , Moriaki Fuyama , Kenichi Onisawa , Katsumi Tamura , Yoshimasa Ono , Yoshio Abe , Takahiro Nakayama , Akira Sato , Kenichi Hashimoto
发明人： Kazuo Taguchi , Moriaki Fuyama , Kenichi Onisawa , Katsumi Tamura , Yoshimasa Ono , Yoshio Abe , Takahiro Nakayama , Akira Sato , Kenichi Hashimoto
IPC分类号： H05B33/12 , G09F9/33 , H05B33/14 , H05B33/22
CPC分类号： H05B33/145 , G09F9/33 , H05B33/22 , Y10S428/917
摘要： In an electroluminescence element including light emitting layers emitting light by applying AC voltages thereto the light emitting layer consists of a light emitting layer emitting red light and a light emitting layer emitting bluish green light and a blue filter transmitting blue light and a green filter transmitting green light are disposed on the light emitting surface side of the bluish green light emitting layer. In this way it is possible to take out red, blue and green lights at an approximately equal brightness level and to realize full color.
摘要翻译：在包括通过施加AC电压发光的发光层的电致发光元件中，发光层由发射红光的发光层和发出蓝绿色光的发光层和透射蓝光的蓝色滤光器以及绿色滤光片组成光被设置在蓝绿色发光层的发光表面侧。以这种方式，可以以大致相等的亮度级别取出红色，蓝色和绿色的灯光并实现全彩色。

2. 发明授权

US4877994A Electroluminescent device and process for producing the same 失效
标题翻译：电致发光器件及其制造方法
公开(公告)号：US4877994A
公开(公告)日：1989-10-31
申请号：US172415
申请日：1988-03-23
申请人： Moriaki Fuyama , Katsumi Tamura , Kazuo Taguchi , Kenichi Onisawa , Akira Sato , Kenichi Hashimoto , Takahiro Nakayama , Yoshio Abe
发明人： Moriaki Fuyama , Katsumi Tamura , Kazuo Taguchi , Kenichi Onisawa , Akira Sato , Kenichi Hashimoto , Takahiro Nakayama , Yoshio Abe
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22
CPC分类号： H05B33/145 , H05B33/10 , H05B33/22 , Y10S428/917
摘要： An electroluminescent device comprising an electroluminescent layer capable of emitting light under application of AC voltage, the electroluminescent layer comprising strontium sulfide as a matrix and containing at least one of halides and sulfides of cerium, europium, thulium, terbium and samarium, and having a lattice constant of not more than 6.04 .ANG. and a half-width value at the (111) face of not more than 0.21 degree has a higher brightness than an electroluminescent device having an electroluminescent layer comprising ZnS as a matrix.
摘要翻译：一种电致发光器件，包括能够在施加AC电压的情况下发光的电致发光层，所述电致发光层包含硫化锶作为基质并且含有铈，铕，ium，铽和钐的卤化物和硫化物中的至少一种，并具有晶格不大于6.04的常数和（111）面处的不大于0.21度的半值的亮度比具有包含ZnS作为基质的电致发光层的电致发光器件具有更高的亮度。

3. 发明授权

US5182491A Thin film electroluminescent device 失效
标题翻译：薄膜电致发光器件
公开(公告)号：US5182491A
公开(公告)日：1993-01-26
申请号：US852942
申请日：1992-03-17
申请人： Kazuo Taguchi , Kenichi Onisawa , Moriaki Fuyama , Katsumi Tamura , Yoshio Abe , Takahiro Nakayama , Kenichi Hashimoto , Akira Sato
发明人： Kazuo Taguchi , Kenichi Onisawa , Moriaki Fuyama , Katsumi Tamura , Yoshio Abe , Takahiro Nakayama , Kenichi Hashimoto , Akira Sato
IPC分类号： H05B33/14 , H05B33/18 , H05B33/22 , H05B33/26 , H05B33/28
CPC分类号： H05B33/145 , H05B33/18 , H05B33/22 , H05B33/26 , H05B33/28
摘要： A thin film electroluminescent (EL) device includes a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.
摘要翻译：薄膜电致发光（EL）器件包括形成在透明电绝缘体的衬底上的一对相对电极和形成在电极之间并分别在绝缘层两面被覆的EL层。使用硫化锶作为EL层的主体材料，其晶体倾向于具有（200）取向，从而基本上消除了参与发光发射的电子对自由转移的抵抗，以确保更高的亮度。

4. 发明授权

US5099172A Thin film electroluminescent device 失效
标题翻译：薄膜电致发光器件
公开(公告)号：US5099172A
公开(公告)日：1992-03-24
申请号：US268727
申请日：1988-11-07
申请人： Kazuo Taguchi , Kenichi Onisawa , Moriaki Fuyama , Katsumi Tamura , Yoshio Abe , Takahiro Nakayama , Kenichi Hashimoto , Akira Sato
发明人： Kazuo Taguchi , Kenichi Onisawa , Moriaki Fuyama , Katsumi Tamura , Yoshio Abe , Takahiro Nakayama , Kenichi Hashimoto , Akira Sato
IPC分类号： H05B33/14 , H05B33/18 , H05B33/22 , H05B33/26 , H05B33/28
CPC分类号： H05B33/145 , H05B33/18 , H05B33/22 , H05B33/26 , H05B33/28
摘要： A thin film electroluminescent (EL) device comprises a pair of opposing electrodes formed on a substrate of a transparent electrical insulator, and an EL layer formed between the electrodes and covered at both surfaces with insulating layers respectively. Strontium sulfide is used as a host material of the EL layer, and its crystals tend strongly to have a (200) orientation, so that the resistance to free transit of electrons participating in emission of luminescence is substantially eliminated to ensure a higher brightness.
摘要翻译：薄膜电致发光（EL）器件包括形成在透明电绝缘体的衬底上的一对相对电极和形成在电极之间并分别在绝缘层两面被覆的EL层。使用硫化锶作为EL层的主体材料，其晶体倾向于具有（200）取向，从而基本上消除了参与发光发射的电子对自由转移的抵抗，以确保更高的亮度。

5. 发明授权

US4857802A Thin film EL element and process for producing the same 失效
标题翻译：薄膜EL元件及其制造方法
公开(公告)号：US4857802A
公开(公告)日：1989-08-15
申请号：US100758
申请日：1987-09-24
申请人： Moriaki Fuyama , Katsumi Tamura , Kazuo Taguchi , Kenichi Onisawa , Akira Sato , Kenichi Hashimoto , Takahiro Nakayama , Yoshio Abe
发明人： Moriaki Fuyama , Katsumi Tamura , Kazuo Taguchi , Kenichi Onisawa , Akira Sato , Kenichi Hashimoto , Takahiro Nakayama , Yoshio Abe
IPC分类号： C23C14/00 , C23C14/08 , H05B33/10 , H05B33/12 , H05B33/22
CPC分类号： H05B33/10 , C23C14/0036 , C23C14/088 , H05B33/22
摘要： A thin film EL element which comprises an insulating substrate, a transparent electrode, a first insulating layer, a light-emitting layer, a second insulating layer and a back side electrode, successively laid one upon another, at least one of the first and second insulating layers being composed of a material having a perovskite crystal structure, for example, a layer of SrTiO.sub.3, PbTiO.sub.3 or BaTiO.sub.3, particularly a SrTiO.sub.3. The material having the perovskite crystal structure has an increased (111) plane orientation such that the diffraction intensity ratio of (111) plane to (110) plane, I (111)/I (110), is more than 0.5. The material can be a single crystal, having (111) plane orientation. The material is deposited by sputtering, at substrate temperatures of not less than 200.degree. C. and up to the softening point of the insulating substrate, and at a pressure of not more than 1.times.10.sup.-2 Torr. The material has a high dielectric constant, a high dielectric strength and thus has a high reliability of element performance with a low driving voltage.
摘要翻译： 1.一种薄膜EL元件，其特征在于，包括：绝缘基板，透明电极，第一绝缘层，发光层，第二绝缘层和背面电极，绝缘层由具有钙钛矿晶体结构的材料构成，例如SrTiO 3，PbTiO 3或BaTiO 3层，特别是SrTiO 3层。具有钙钛矿晶体结构的材料具有增加的（111）面取向，使得（111）面与（110）面的衍射强度比I（111）/ I（110）大于0.5。该材料可以是具有（111）面取向的单晶。该材料通过溅射沉积，在衬底温度不低于200℃，直到绝缘衬底的软化点，并且压力不大于1×10 -2 Torr。该材料具有高介电常数，高介电强度，因此具有低驱动电压的元件性能的高可靠性。

6. 发明授权

US5200277A Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US5200277A
公开(公告)日：1993-04-06
申请号：US454961
申请日：1989-12-22
申请人： Takahiro Nakayama , Kenichi Onisawa , Katsumi Tamura , Kazuo Taguchi , Akira Sato , Kenichi Hashimoto , Yoshio Abe , Masanobu Hanazono
发明人： Takahiro Nakayama , Kenichi Onisawa , Katsumi Tamura , Kazuo Taguchi , Akira Sato , Kenichi Hashimoto , Yoshio Abe , Masanobu Hanazono
IPC分类号： C23C14/08 , H05B33/10 , H05B33/22
CPC分类号： H05B33/22 , C23C14/08 , H05B33/10 , Y10S428/917 , Y10T428/24975 , Y10T428/265
摘要： An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic. These dielectric films, with a high breakdown field strength, make it possible to obtain an electroluminescent device having a large drive voltage margin and providing a luminescence of high brightness.
摘要翻译：一种电致发光器件，包括电介质膜，每个电介质膜由具有强自愈型电介质击穿特性的材料制成的第一区域，由具有强传播型电介质击穿特性的材料制成的第二区域，以及由混合物组成的混合区域在这两种材料中，第一和第二区域在膜厚度方向上交替地与它们之间的混合区域布置，这两种材料在混合区域中的混合比以这样的方式变化，使得一种材料的比例从该材料的区域朝向另一材料的相邻区域，即另一种材料的比例增加。因此，电介质膜在膜厚方向上的这两种材料的混合比的变化是连续的和周期性的。具有高击穿场强度的这些电介质膜使得可以获得具有大的驱动电压余量并提供高亮度的发光的电致发光器件。

7. 发明授权

US08454766B2 Extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature 有权
标题翻译：在高温下耐脆性优异的自由切削铝合金挤压材料
公开(公告)号：US08454766B2
公开(公告)日：2013-06-04
申请号：US12059904
申请日：2008-03-31
申请人： Kensuke Mori , Kazuo Taguchi
发明人： Kensuke Mori , Kazuo Taguchi
IPC分类号： C22C21/00 , C22C21/12
CPC分类号： C22C21/12
摘要： An extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature, containing from 3 to 6% by mass of Cu and from 0.9 to 3% by mass of Bi with the balance being Aluminum and inevitable impurities, wherein a temperature for reducing the Charpy impact test value to half of the value at room temperature is 180° C. or more.
摘要翻译：含有3〜6质量％的Cu和0.9〜3质量％的Bi，余量为铝和不可避免的杂质的高温耐脆性优异的自由切削铝合金挤出材料，其中，将夏比冲击试验值降低到室温下的一半值的温度为180℃以上。

8. 发明授权

US06962632B2 Aluminum alloy hollow material, aluminum alloy extruded pipe material for air conditioner piping and process for producing the same 有权
公开(公告)号：US06962632B2
公开(公告)日：2005-11-08
申请号：US10772044
申请日：2004-02-04
申请人： Kazuo Taguchi , Toshio Ohta
发明人： Kazuo Taguchi , Toshio Ohta
IPC分类号： C22C21/00 , C22F1/04
CPC分类号： C22F1/04 , C22C21/00
摘要： Disclosed are aluminum alloy hollow materials and processes for producing the same wherein an aluminum alloy hollow material is produced by subjecting an ingot of an aluminum alloy containing 0.3˜1.5 wt % Mn to port hole extrusion or port hole extrusion and drawing-elongation processing and wherein a difference in electric conductivity between individual portions in lengthwise direction of the hollow material is not more than 1.0 IACS %. According to the aluminum alloy hollow materials, preferential corrosion in welding potions in port hole extrusion can be prevented.

9. 发明申请

US20050082613A1 Semiconductor integrated circuit device and semiconductor memory using the same 审中-公开
标题翻译：半导体集成电路器件和使用其的半导体存储器
公开(公告)号：US20050082613A1
公开(公告)日：2005-04-21
申请号：US10917500
申请日：2004-08-13
申请人： Kazuo Taguchi
发明人： Kazuo Taguchi
IPC分类号： H01L21/28 , H01L21/8238 , H01L21/8244 , H01L21/84 , H01L27/092 , H01L27/11 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786
CPC分类号： H01L29/78615 , H01L21/84 , H01L27/1104 , H01L27/1203 , H01L29/42384 , H01L29/78621
摘要： Aspects of the invention can provide a semiconductor device including a transistor having a gate shape, which enables a source area and a body contact area to be connected without using wiring and with no gate part protruding to the source area side, and a semiconductor memory. The semiconductor device can have field regions, a transistor which includes a gate (L type gate), a gate insulating film directly below the gate, a body area directly below the gate insulating film, and a source area and a drain area formed on both sides which hold the body area in between. The gate can consist essentially of a first part extending along a channel width direction on the field region and a second part protruding from one end of the first part in the channel width direction to the drain side, and being formed in the L type gate in a plan view. A body contact area can be provided on the field region on the opposite side to the first part with the second part of the L type gate in between, and a low resistant layer is formed on a surface between the source area and the body contact area.
摘要翻译：本发明的方面可以提供一种半导体器件，其包括具有栅极形状的晶体管，其能够在不使用布线并且没有栅极部分突出到源极区侧的情况下连接源极区域和本体接触区域，以及半导体存储器。半导体器件可以具有场区域，晶体管包括栅极（L型栅极），栅极正下方的栅极绝缘膜，栅极绝缘膜正下方的体区，以及形成在两者上的源极区和漏极区身体区域之间的两侧。栅极基本上可以由场区域上的沟道宽度方向延伸的第一部分和从沟道宽度方向上的第一部分的一端突出到漏极侧的第二部分形成在L型栅极中一个平面图。可以在与第一部分相反的一侧的场区域上设置体接触区域，其中L型栅极的第二部分在其间，并且在源区域和身体接触区域之间的表面上形成低阻力层。

10. 发明授权

US06327891B1 Gas sensor 失效
标题翻译：气体传感器
公开(公告)号：US06327891B1
公开(公告)日：2001-12-11
申请号：US09257513
申请日：1999-02-25
申请人： Keiichi Noda , Kazuo Taguchi , Hisaharu Nishio , Katsuhisa Yabuta
发明人： Keiichi Noda , Kazuo Taguchi , Hisaharu Nishio , Katsuhisa Yabuta
IPC分类号： G01N2704
CPC分类号： G01N27/407
摘要： A gas sensor has a structure in which an insulator is disposed inside a metallic shell, and a sensor element is disposed inside the insulator. A cavity is formed in the insulator to surround the sensor element. A sealing material mainly formed of glass is charged into the cavity in order to establish sealing between the inner surface of the insulator and the outer surface of the sensor element. The sensor element has a rectangular cross section, and the inner surface of the insulator defining the cavity has a sectional profile corresponding to the sectional profile of the sensor element.
摘要翻译：气体传感器具有绝缘体设置在金属壳内部的结构，并且传感器元件设置在绝缘体的内部。在绝缘体中形成腔体以包围传感器元件。主要由玻璃形成的密封材料被填充到空腔中，以便在绝缘体的内表面和传感器元件的外表面之间建立密封。传感器元件具有矩形横截面，并且限定空腔的绝缘体的内表面具有对应于传感器元件的截面轮廓的截面轮廓。

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