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1. 发明授权

US4729004A Semiconductor photo device 失效
标题翻译：半导体照相装置
公开(公告)号：US4729004A
公开(公告)日：1988-03-01
申请号：US904775
申请日：1986-09-05
申请人： Kazuo Sakai , Yuichi Matsushima , Yukio Noda , Takaya Yamamoto
发明人： Kazuo Sakai , Yuichi Matsushima , Yukio Noda , Takaya Yamamoto
IPC分类号： H01L31/107 , H01L31/11 , H01L29/90 , H01L27/14 , H01L29/161
CPC分类号： H01L31/1075 , H01L31/11
摘要： A semiconductor photo detector provided with a photo detecting portion, in which at least three semiconductor layers of the same conductivity type and different energy gaps are formed in the order of magnitude of the energy gap, and in which another semiconductor layer which has the same composition as a first semiconductor layer having the largest energy gap among the at least three semiconductor layers but is different in conductivity type from the first semiconductor layer is formed in contact with the first semiconductor layer at the optical input side of the semiconductor photo diode.
摘要翻译：一种具有光电检测部分的半导体光电检测器，其中以能隙的数量级形成至少三个相同导电类型和不同能隙的半导体层，其中具有相同组成的另一半导体层作为在所述至少三个半导体层中具有最大能隙但与所述第一半导体层不同的导电类型的第一半导体层与所述半导体光电二极管的光输入侧的第一半导体层接触形成。

2. 发明授权

US4731641A Avalanche photo diode with quantum well layer 失效
标题翻译：具有量子阱层的雪崩光电二极管
公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译：具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高，多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。

3. 发明授权

US4383266A Avalanche photo diode 失效
标题翻译：雪崩光电二极管
公开(公告)号：US4383266A
公开(公告)日：1983-05-10
申请号：US187744
申请日：1980-09-16
申请人： Kazuo Sakai , Yuichi Matsushima , Shigeyuki Akiba , Takaya Yamamoto
发明人： Kazuo Sakai , Yuichi Matsushima , Shigeyuki Akiba , Takaya Yamamoto
IPC分类号： H01L31/107 , H01L29/90
CPC分类号： H01L31/1075
摘要： An avalanche photo diode provided with a guard ring around a photo detecting region having a pn junction, in which semiconductor layers of the photo detecting region having a pn junction, different in conductivity type from a semiconductor of the guard ring, are composed of a second semiconductor layer formed in contact with a first semiconductor layer forming the pn junction of the photo detecting region and of the same conductivity type as the semiconductor of the guard ring, and a third semiconductor layer formed in contact with the second semiconductor layer and having a larger band gap than the second semiconductor layer, and in which the tip end of the guard ring is formed to extend down into the third semiconductor layer. An avalanche photo diode can be formed to be provided with a uniformly thick, first semiconductor layer forming a photo detecting region and a second semiconductor layer forming a first pn junction between it and the first semiconductor layer, in which third and fourth semiconductor layers of the same composition as each other, respectively having larger band gaps than those of the first and second semiconductor layers, are provided to form therebetween a second pn junction which extends from the first pn junction to surround the peripheral portion of the first semiconductor layer.
摘要翻译：一种雪崩光电二极管，其在具有pn结的光检测区域周围设置有保护环，其中具有pn结的光检测区域的半导体层与导电类型不同于保护环的半导体，由第二形成为与形成光检测区域的pn结并且具有与保护环的半导体相同的导电类型的第一半导体层形成的半导体层，以及形成为与第二半导体层接触并具有较大的第三半导体层的第三半导体层带隙比第二半导体层，并且其中保护环的尖端形成为向下延伸到第三半导体层。可以形成雪崩光电二极管，以形成均匀厚的形成光检测区域的第一半导体层和在其与第一半导体层之间形成第一pn结的第二半导体层，其中第三半导体层提供分别具有比第一和第二半导体层的带隙大的带隙的彼此相同的组成，以形成从第一pn结延伸到围绕第一半导体层的周边部分的第二pn结。

4. 发明授权

US4918496A Infrared emitting device with dislocation free layer 失效
标题翻译：具有无位错层的红外发射装置
公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
申请人： Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba , Katsuyuki Utaka
IPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01S5/00 , H01S5/02 , H01S5/32 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译：一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。

5. 发明授权

US4852108A Wavelength tunable semiconductor laser with narrow band-pass active filter region 失效
标题翻译：具有窄带通有源滤波器区域的波长可调谐半导体激光器
公开(公告)号：US4852108A
公开(公告)日：1989-07-25
申请号：US216397
申请日：1988-07-07
申请人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： H01S5/00 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14
CPC分类号： H01S5/06258 , H01S5/10 , H01S5/1025 , H01S5/12 , H01S5/14 , Y10S372/704
摘要： A semiconductor laser is disclosed in which a light emitting region having a light emitting layer and a waveguide region having a waveguide layer which is coupled to at least one side of the light emitting layer with a high efficiency are integrated on the same substrate; the light emitting region includes an active filter section having a diffraction grating equipped with a band-pass filter function; the light emitting region and the waveguide region are electrically isolated and are each provided with an electrode; and the oscillation wavelength of the semiconductor lase is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.

6. 发明授权

US4682196A Multi-layered semi-conductor photodetector 失效
标题翻译：多层半导体光电探测器
公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
申请人： Kazuo Sakai , Yuichi Matsushima , Shigeyuki Akiba , Katsuyuki Utaka
发明人： Kazuo Sakai , Yuichi Matsushima , Shigeyuki Akiba , Katsuyuki Utaka
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译：一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。

7. 发明授权

US4660934A Method for manufacturing diffraction grating 失效
$Method for manufacturing diffraction grating$
标题翻译：衍射光栅的制造方法
公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
申请人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Shigeyuki Akiba , Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： G02B5/18 , G03F7/00 , G03F7/095
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译：制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构（P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。

8. 发明授权

US5315422A Optical Mach-Zehnder type logic element which performs an XOR operation 失效
标题翻译：执行异或运算的光学马赫 - 曾德尔型逻辑元件
公开(公告)号：US5315422A
公开(公告)日：1994-05-24
申请号：US22016
申请日：1993-02-24
申请人： Katsuyuki Utaka , Yasuyuki Nagao , Yuichi Matsushima , Kazuo Sakai
发明人： Katsuyuki Utaka , Yasuyuki Nagao , Yuichi Matsushima , Kazuo Sakai
IPC分类号： G02F1/017 , G02F1/225 , G02F1/35 , G02F1/355 , G02F3/00 , G02B6/10 , G02B26/00
CPC分类号： B82Y20/00 , G02F1/3517 , G02F3/00 , G02F1/017 , G02F1/225 , G02F1/3556
摘要： An optical logic element is disclosed which performs an XOR operation through utilization of the high-speed property of light. On each branched waveguide of a Mach-Zehnder interference type optical waveguide there is provided a phase modulating element whose refractive index undergoes a change when it is irradiated by light. The interference type optical waveguide is adapted to provide different optical output levels when the refractive index changes of the phase modulating elements are both zero or a predetermined value and when they differ from each other. Thus, the optical logic element is capable of performing the XOR or XNOR operation at an ultrahigh speed.
摘要翻译：公开了一种光逻辑元件，其通过利用光的高速特性来执行异或运算。在马赫曾德尔干涉型光波导的每个分支波导上，提供了一种相位调制元件，其在被光照射时其折射率发生变化。干涉型光波导适合于当相位调制元件的折射率变化为零或预定值并且当它们彼此不同时，提供不同的光输出电平。因此，光逻辑元件能够以超高速执行XOR或XOR运算。

9. 发明授权

US5122844A Quantum well structure and semiconductor device using the same 失效
标题翻译：量子阱结构和使用相同的半导体器件
公开(公告)号：US5122844A
公开(公告)日：1992-06-16
申请号：US706542
申请日：1991-05-22
申请人： Shigeyuki Akiba , Masashi Usami , Yuichi Matsushima , Kazuo Sakai , Katsuyuki Utaka
发明人： Shigeyuki Akiba , Masashi Usami , Yuichi Matsushima , Kazuo Sakai , Katsuyuki Utaka
IPC分类号： H01L27/15 , H01L33/06 , H01L33/14 , H01L33/28 , H01L33/30 , H01S5/00 , H01S5/34
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01L33/26
摘要： A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.

10. 发明授权

US4897845A Semiconductor optical amplifying element 失效
标题翻译：半导体光放大元件
公开(公告)号：US4897845A
公开(公告)日：1990-01-30
申请号：US350088
申请日：1989-05-10
申请人： Katsuyuki Utaka , Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Yuichi Matsushima , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： G02F1/35 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/44 , H01L33/58 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/50
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/50 , H01S5/2203 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical amplifying element is disclosed which has a semiconductor multilayer structure including at least a first semiconductor layer for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode and an n-side electrode for the carrier injection. A first reflecting surface and a second reflecting surface are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first reflecting surface and the second reflecting surface.

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