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    • 2. 发明授权
    • Multi-layered semi-conductor photodetector
    • 多层半导体光电探测器
    • US4682196A
    • 1987-07-21
    • US806746
    • 1985-12-09
    • Kazuo SakaiYuichi MatsushimaShigeyuki AkibaKatsuyuki Utaka
    • Kazuo SakaiYuichi MatsushimaShigeyuki AkibaKatsuyuki Utaka
    • H01L29/205H01L31/0352H01L31/11H01L27/14H01L29/12
    • H01L29/205H01L31/035281H01L31/11Y02E10/50
    • A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
    • 一种半导体器件,其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层,载流子浓度小于1016cm-3的第二半导体层,具有载流子浓度的第三半导体层 大于1017cm-3,厚度小于300,载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层,其中第一 并且第五半导体层的导电类型相同,并且第三半导体层的导电类型与第五半导体层不同。 根据本发明,第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域,以从第五半导体层延伸到第二半导体层。
    • 3. 发明授权
    • Method for manufacturing diffraction grating
    • 衍射光栅的制造方法
    • US4660934A
    • 1987-04-28
    • US710984
    • 1985-03-12
    • Shigeyuki AkibaKatsuyuki UtakaKazuo SakaiYuichi Matsushima
    • Shigeyuki AkibaKatsuyuki UtakaKazuo SakaiYuichi Matsushima
    • G02B5/18G03F7/00G03F7/095
    • G03F7/095G02B5/1857G03F7/001Y10S359/90
    • A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
    • 制造衍射光栅的方法,其中在基板上形成负型光致抗蚀剂膜(N膜)和正型光致抗蚀剂膜(P膜)之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜,或者在前者的后者膜覆盖第二区域B,第一区域和第二区域受到双光束干涉曝光,从而形成衍射光栅,其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性,在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于,在基板上形成后,形成负型光致抗蚀剂膜(N膜)仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 (P膜)覆盖第二区域B,对基板的第一区域和第二区域进行双光束干涉曝光,从而形成衍射光栅,其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性,彼此相反。