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1. 发明授权

US07005382B2 Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing 有权
标题翻译：用于化学机械抛光的水分散体，化学机械抛光工艺，半导体器件的生产过程以及用于制备用于化学机械抛光的水分散体的材料
公开(公告)号：US07005382B2
公开(公告)日：2006-02-28
申请号：US10694890
申请日：2003-10-29
申请人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
发明人： Kazuo Nishimoto , Tatsuaki Sakano , Akihiro Takemura , Masayuki Hattori , Nobuo Kawahashi , Naoto Miyashita , Atsushi Shigeta , Yoshitaka Matsui , Kazuhiko Ida
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/02024
摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.
摘要翻译：提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II）水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。磨粒在至少一种水分散体中含有。

2. 发明申请

US20050176253A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050176253A1
公开(公告)日：2005-08-11
申请号：US10944866
申请日：2004-09-21
申请人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
发明人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
IPC分类号： B24B7/00 , B24B9/00 , B24B37/00 , C09G1/00 , C09G1/02 , C09K3/14 , H01L21/00 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/3205 , H01L21/321 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02074 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.
摘要翻译：在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理，同时供给在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。然后，向碱性CMP浆料中加入螯合金属离子的有机酸，并使用添加有机酸的CMP浆料进行研磨，直至暴露出绝缘膜的表面。

3. 发明授权

US07413989B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07413989B2
公开(公告)日：2008-08-19
申请号：US10944866
申请日：2004-09-21
申请人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
发明人： Atsushi Shigeta , Kazuhiko Ida , Yoshitaka Matsui
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , B24B37/044 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.
摘要翻译：在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理，同时供给在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。然后，向碱性CMP浆料中加入螯合金属离子的有机酸，并使用添加有机酸的CMP浆料进行研磨，直至暴露出绝缘膜的表面。

4. 发明授权

US07101259B2 Polishing method and apparatus 失效
公开(公告)号：US07101259B2
公开(公告)日：2006-09-05
申请号：US10694047
申请日：2003-10-28
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： B24B49/00 , B24B51/00 , H01L21/00 , B24B1/00
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

5. 发明授权

US06667238B1 Polishing method and apparatus 有权
标题翻译：抛光方法和设备
公开(公告)号：US06667238B1
公开(公告)日：2003-12-23
申请号：US09545504
申请日：2000-04-07
申请人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
发明人： Norio Kimura , Mitsuhiko Shirakashi , Katsuhiko Tokushige , Masao Asami , Naoto Miyashita , Masako Kodera , Yoshitaka Matsui , Soichi Nadahara , Hiroshi Tomita
IPC分类号： H01L2100
CPC分类号： B24B37/345
摘要： A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.
摘要翻译：抛光装置用于化学机械抛光形成在诸如半导体晶片的基板上的铜（Cu）层，然后清洁抛光的基板。抛光装置具有研磨部，该研磨部具有带有抛光面的转盘和用于保持基板的顶环，并将基板按压在研磨面上，以对其上具有半导体器件的表面进行抛光;以及清洗部，被抛光清洗部具有电解供水装置，用于向基板供给电解水，以清洗基板的抛光表面，同时向基板供应电解水。

6. 发明授权

US06783658B2 Electropolishing method 失效
标题翻译：电抛光方法
公开(公告)号：US06783658B2
公开(公告)日：2004-08-31
申请号：US10261949
申请日：2002-10-02
申请人： Yoshitaka Matsui , Hiroshi Kosukegawa , Masako Kodera , Naoto Miyashita
发明人： Yoshitaka Matsui , Hiroshi Kosukegawa , Masako Kodera , Naoto Miyashita
IPC分类号： B23H1100
CPC分类号： C25F3/00 , H01L21/32115
摘要： A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm2 upon application of a voltage of +2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.
摘要翻译：通过在阳极电极和对电极之间施加电压同时使阳极电极与靶材料的表面接触来对目标材料进行电抛光。在电化学测量中，在0.1M高氯酸溶液内施加+ 2.5V的电压与银/氯化银电极相比，阳极电极由电流密度不高于10mA / cm 2的电极材料形成使用恒电位仪

7. 发明授权

US08605422B2 Thin display apparatus 有权
标题翻译：薄型显示装置
公开(公告)号：US08605422B2
公开(公告)日：2013-12-10
申请号：US13127504
申请日：2009-11-05
申请人： Yoshitaka Matsui , Katsuhiko Matsuya
发明人： Yoshitaka Matsui , Katsuhiko Matsuya
IPC分类号： G06F1/16 , G02F1/1333
CPC分类号： G11B33/1406 , G11B31/006 , H04N5/64 , H05K5/02 , H05K7/20963
摘要： A thin display apparatus equipped with a video display panel controls rise in temperature of a disk drive by heat-transfer from high temperature internals of the apparatus. A thermal insulating recess is formed in a face of a rear side casing which faces a disk drive unit, and a surface of the disk drive unit mounted on the rear side casing seals the thermal insulating recess. An area of the thermal insulating recess sealed by the disk drive unit becomes a thermal insulating layer between the rear side casing and the disk drive unit, and the thermal insulating layer interrupts thermal transfer from the high temperature internals of the apparatus to the disk drive unit.
摘要翻译：配备有视频显示面板的薄型显示装置通过从设备的高温内部部件的热传递来控制磁盘驱动器的温度升高。在背面壳体的面对盘驱动单元的表面上形成绝热凹部，并且安装在后侧壳体上的盘驱动单元的表面密封绝热凹部。由盘驱动单元密封的绝热凹槽的区域成为后侧壳体和盘驱动单元之间的绝热层，并且隔热层中断从设备的高温内部到盘驱动单元的热传递。

8. 发明授权

US07727891B2 Method of manufacturing a semiconductor device using a wet process 有权
标题翻译：使用湿法制造半导体器件的方法
公开(公告)号：US07727891B2
公开(公告)日：2010-06-01
申请号：US11074774
申请日：2005-03-09
申请人： Yoshitaka Matsui , Masako Kodera
发明人： Yoshitaka Matsui , Masako Kodera
IPC分类号： H01L21/461
CPC分类号： H01L21/02071 , H01L21/31116 , H01L21/3212 , H01L21/76814 , H01L21/76838 , H01L21/7684 , H01L21/76883
摘要： A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.
摘要翻译：一种制造半导体器件的方法，包括以下工序：形成其中至少含有Ti和Ta和铜布线的阻挡金属在其表面上露出的结构，或者其中至少一种选自由Ti，W和Cu和Al组成的组在其表面上暴露于半导体衬底上方，并将溶解有氢的氢溶解溶液供给到结构的表面。

9. 发明授权

US07377540B2 Airbag unit and case of airbag unit 有权
标题翻译：安全气囊单元和气囊单元壳体
公开(公告)号：US07377540B2
公开(公告)日：2008-05-27
申请号：US11196257
申请日：2005-08-04
申请人： Kei Tsujimoto , Yoshitaka Matsui , Wataru Nakazawa
发明人： Kei Tsujimoto , Yoshitaka Matsui , Wataru Nakazawa
IPC分类号： B60R21/16
CPC分类号： B60R21/2171 , B60R21/045 , B60R2021/2175
摘要： A case of an airbag unit has a case body for forming a storage room for accommodating an airbag. The case body has a bottom section, a pair of first side walls, and a pair of second side walls. The case also has a movable component disposed adjacent to an outer surface of one of the first side walls, and retractable toward a base end along the case body in response to an external force applied to the case. One of the first side walls has a plurality of pillars extending upwardly from the bottom to form cut-off portions therebetween extending downwardly from the upper opening.
摘要翻译：气囊单元的壳体具有用于形成用于容纳气囊的储藏室的壳体。壳体具有底部，一对第一侧壁和一对第二侧壁。壳体还具有邻近第一侧壁中的一个的外表面设置的可移动部件，并且响应于施加到壳体的外力而沿着壳体主体朝向基端部缩回。第一侧壁中的一个具有从底部向上延伸的多个柱，以形成从上开口向下延伸的截断部分。

10. 发明申请

US20060066082A1 Horn switch device, airbag system, and steering device 审中-公开
标题翻译：喇叭开关装置，气囊系统和转向装置
公开(公告)号：US20060066082A1
公开(公告)日：2006-03-30
申请号：US11226238
申请日：2005-09-15
申请人： Kei Tsujimoto , Yoshitaka Matsui , Wataru Nakazawa
发明人： Kei Tsujimoto , Yoshitaka Matsui , Wataru Nakazawa
IPC分类号： B60R21/16
CPC分类号： B60Q5/003
摘要： In order reduce the number of components of a horn switch device that is mounted to a steering wheel for vehicles, an airbag module of a steering device is constructed such that guide nuts are used as both fixing means for fixing a link mechanism to a retainer and fixing means for fixing an inflator to the retainer.
摘要翻译：为了减少安装到车辆的方向盘的喇叭开关装置的部件数量，转向装置的气囊模块构造成使得导向螺母用作将连杆机构固定到保持器的固定装置，用于将充气器固定到保持器的固定装置。

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