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1. 发明申请

US20110308588A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110308588A1
公开(公告)日：2011-12-22
申请号：US13159579
申请日：2011-06-14
申请人： Kazuo NISHI , Takashi HIROSE , Naoto KUSUMOTO
发明人： Kazuo NISHI , Takashi HIROSE , Naoto KUSUMOTO
IPC分类号： H01L31/06 , H01L31/0352
CPC分类号： H01L31/03762 , H01L31/03682 , H01L31/03685 , H01L31/03921 , H01L31/0465 , H01L31/1816 , H01L31/1872 , H01L31/202 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized.
摘要翻译：具有低照度的高发电量的光电转换装置，其中半导体层被适当地分离并且防止了电池的侧表面部分的短路。光电转换装置包括形成在与第一电极相邻的一个第一电极和另一个第一电极之间的隔离槽; 包括在第一电极上具有一种导电类型的第一半导体层的堆叠，使用本征半导体形成的第二半导体层和具有与一种导电类型相反的导电类型的第三半导体层; 以及连接电极，其连接与包含在与所述一个第一电极相邻的另一个第一电极上形成的堆叠中的第三半导体层接触的第一电极和第二电极。第二半导体层的侧表面部分不结晶。

2. 发明申请

US20110120566A1 DISCONTINUOUS SWITCHING FLUID FLOW RATE CONTROL METHOD USING PRESSURE TYPE FLOW RATE CONTROL DEVICE 审中-公开
标题翻译：使用压力式流量控制装置的不连续切换流体流量控制方法
公开(公告)号：US20110120566A1
公开(公告)日：2011-05-26
申请号：US12950798
申请日：2010-11-19
申请人： Tadahiro OHMI , Kouji NISHINO , Ryousuke DOHI , Masaaki NAGASE , Katsuyuki SUGITA , Kaoru HIRATA , Takashi HIROSE , Tsutomu SHINOHARA , Nobukazu IKEDA , Toshihide YOSHIDA , Hisashi TANAKA
发明人： Tadahiro OHMI , Kouji NISHINO , Ryousuke DOHI , Masaaki NAGASE , Katsuyuki SUGITA , Kaoru HIRATA , Takashi HIROSE , Tsutomu SHINOHARA , Nobukazu IKEDA , Toshihide YOSHIDA , Hisashi TANAKA
IPC分类号： F17D1/00
CPC分类号： G05D7/0635 , G01F1/42 , G01F7/005 , Y10T137/0379
摘要： A fluid flow rate control method is provided that uses a flow rate range variable type pressure type flow rate control device provided with at least two or more parallel fluid passages disposed between the downstream side of a control valve of the control device and a fluid supply pipe passage, and orifices having different fluid flow rate characteristics are respectively interposed in parallel fluid passages to pass fluid in a first flow rate region through one orifice for flow rate control, and to pass fluid in a second flow rate region through at least another orifice for flow rate control. Flow rate characteristics of the respective orifices are selected so that a maximum controllable flow rate of fluid in the first flow rate region at low flow rate is smaller than 10% of a maximum controllable flow rate in the second flow rate region at high flow rate.
摘要翻译：提供了一种流体流量控制方法，其使用流量范围可变型压力型流量控制装置，该流量范围可变型压力型流量控制装置设置有至少两个或更多个平行的流体通道，该流体通道设置在控制装置的控制阀的下游侧与流体供给管具有不同流体流速特性的通道和孔分别插入在平行的流体通道中，以使第一流量区域中的流体通过一个孔口用于流量控制，并使第二流量区域中的流体通过至少另一个孔口，流量控制。选择相应孔口的流量特性，使得在低流量下第一流量区域中的流体的最大可控流量小于第二流量区域在高流速下的最大可控流量的10％。

3. 发明申请

US20110315905A1 GASKET TYPE ORIFICE AND PRESSURE TYPE FLOW RATE CONTROL APPARATUS FOR WHICH THE ORIFICE IS EMPLOYED 有权
标题翻译：垫片类型流量和压力类型流量控制装置，用于使用ORIFICE
公开(公告)号：US20110315905A1
公开(公告)日：2011-12-29
申请号：US13169971
申请日：2011-06-27
申请人： Takashi HIROSE , Tsutomu SHINOHARA , Toshihide YOSHIDA , Kohei SHIGYOU , Michio YAMAJI
发明人： Takashi HIROSE , Tsutomu SHINOHARA , Toshihide YOSHIDA , Kohei SHIGYOU , Michio YAMAJI
IPC分类号： F16K31/12
CPC分类号： F16L23/20 , F15D1/025 , G01F1/40 , G01F1/42 , G05D7/0635
摘要： A gasket type orifice includes a first orifice base having a through-type passage in a central area thereof, a second orifice base having in a central area thereof a through-type passage communicating with the passage of the first orifice base, and an orifice plate having an orifice hole formed in a central area thereof, wherein the orifice plate is mounted by insertion in an airtight manner between both orifice bases, and the gasket type orifice is installed in a fluid passage, in which the outer end faces of both orifice bases respectively serve as sealing faces, and an outer diameter of the second orifice base, located on the downstream side, is larger than an outer diameter of the first orifice base located on the upstream side, and an outer peripheral edge portion of an inner end face of the second orifice base serves as another sealing face.
摘要翻译：垫圈型孔口包括在其中心区域具有通孔型通道的第一孔口基座，在其中心区域具有与第一孔口基座的通道连通的通孔型通道的第二孔口基座，以及孔板具有形成在其中心区域的孔口孔，其中孔板通过在两个孔口底座之间以气密方式插入而安装，并且垫片型孔口安装在流体通道中，其中两个孔口基座的外端面分别用作密封面，位于下游侧的第二孔基部的外径大于位于上游侧的第一孔基部的外径，内端面的外周缘部的另一个密封面。

4. 发明申请

US20100081254A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR LAYER 有权
标题翻译：制造SOI衬底的方法及制造单晶半导体层的方法
公开(公告)号：US20100081254A1
公开(公告)日：2010-04-01
申请号：US12564973
申请日：2009-09-23
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO , Takashi HIROSE
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO , Takashi HIROSE
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/0262 , Y02E10/547
摘要： An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.
摘要翻译：本发明的目的是提供具有非常有利特性的单晶半导体层，而不需要在高温下进行CMP处理或热处理。此外，目的在于提供具有上述单晶半导体层的半导体衬底（或SOI衬底）。在衬底上的第二单晶半导体层的表面上，通过气相外延生长法形成第一单晶半导体层; 第一单晶半导体层和基底基板之间具有绝缘层彼此接合; 并且第一单晶半导体层和第二单晶半导体层在它们之间的界面处彼此分离，以便在绝缘层之间提供第一单晶半导体层，其中绝缘层位于基底衬底上。因此，可以制造SOI衬底。

5. 发明申请

US20070063376A1 SHEET OR FILM-FORMING ROLL 有权
标题翻译：表格或电影制作
公开(公告)号：US20070063376A1
公开(公告)日：2007-03-22
申请号：US11534339
申请日：2006-09-22
申请人： Takayoshi SANO , Tadamasa FURUYA , Takehiro YAMAMOTO , Satoru NITTA , Koji MIZUNUMA , Takashi HIROSE
发明人： Takayoshi SANO , Tadamasa FURUYA , Takehiro YAMAMOTO , Satoru NITTA , Koji MIZUNUMA , Takashi HIROSE
IPC分类号： B29C43/24
CPC分类号： B29C43/46 , B29C33/04 , B29C33/044 , B29C43/24 , B29C43/52 , B29C47/0021 , B29C47/8845 , B29C2043/3613 , B29C2043/5808
摘要： A sheet or film-forming roll 10 includes an inner cylinder member 20 having axial parts 21, 22 provided on both sides thereof and rotatably supported by bearing parts 26, 27 through the axial parts 21, 22, a rubber roll 40 fitted to an outer circumferential surface of the inner cylinder member 20, eccentric side plates 53, 54 rotatably fitted to the axial parts 21, 22 of the inner cylinder member 20 respectively, and an elastic outer cylinder member 50 rotatably supported by the eccentric side plates 53, 54. The elastic outer cylinder member 50, which is provided with a thin-walled structure and made from metal, has an inner diameter larger than an outer diameter of the rubber roll 40 to accommodate the rubber roll 40 in an interior 68 thereof, and has inner circumferential surface 50A coming into contact with an outer circumferential surface 40A of the rubber roll 40.
摘要翻译：片材或成膜辊10包括内筒构件20，其具有设置在其两侧的轴向部件21,22，并且通过轴向部件21,22由轴承部件26,27可旋转地支撑，安装在外侧的橡胶辊40 内筒构件20的圆周面，分别与内筒构件20的轴部21,22可旋转地嵌合的偏心侧板53,54，以及由偏心侧板53,54可旋转地支撑的弹性外筒构件50。具有薄壁结构并由金属制成的弹性外筒构件50具有比橡胶辊40的外径大的内径，以将橡胶辊40容纳在其内部68中，并且具有内部圆周面50A与橡胶辊40的外周面40A接触。

6. 发明申请

US20100154874A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20100154874A1
公开(公告)日：2010-06-24
申请号：US12565213
申请日：2009-09-23
申请人： Takashi HIROSE , Riho KATAISHI , Akihisa SHIMOMURA
发明人： Takashi HIROSE , Riho KATAISHI , Akihisa SHIMOMURA
IPC分类号： H01L31/18 , H01L31/00
CPC分类号： H01L31/022425 , H01L21/76254 , Y02E10/50
摘要： The oxidation of a lower electrode by the reaction between a metal element in the lower electrode and oxygen in a bonding layer is suppressed. The contamination of a semiconductor layer that is a photoelectric conversion layer by the diffusion of the metal element in the lower electrode into the semiconductor layer is suppressed. The invention relates to a photoelectric conversion device including a backside electrode layer, a crystalline semiconductor layer having a semiconductor junction, and a light-receiving-side electrode layer over a substrate having an insulating surface, in which the backside electrode layer has a stacked structure including a first conductive layer formed with a metal nitride or a refractory metal, a second conductive layer including aluminum (Al) or silver (Ag) as its main component, and a third conductive layer having low resistivity with a semiconductor material, and also relates to a manufacturing method thereof
摘要翻译：通过下部电极中的金属元素与接合层中的氧之间的反应来抑制下部电极的氧化。通过下部电极中的金属元素扩散到半导体层中，作为光电转换层的半导体层的污染被抑制。本发明涉及一种光电转换装置，其包括背面电极层，具有半导体结的结晶半导体层和具有绝缘表面的基板上的受光侧电极层，其中背面电极层具有层叠结构包括由金属氮化物或难熔金属形成的第一导电层，包含铝（Al）或银（Ag）作为其主要成分的第二导电层和具有半导体材料的低电阻率的第三导电层，并且还涉及涉及其制造方法

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