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    • 7. 发明授权
    • Layered bandpass filter
    • 分层带通滤波器
    • US08952767B2
    • 2015-02-10
    • US13429982
    • 2012-03-26
    • Eiko WakataShigemitsu TomakiIsao Abe
    • Eiko WakataShigemitsu TomakiIsao Abe
    • H03H7/12H01P1/203H03H1/00
    • H01P1/20345H03H7/12H03H2001/0085
    • A bandpass filter includes a layered structure including a plurality of stacked dielectric layers, and first to third resonators provided within the layered structure. In terms of circuit configuration, the second resonator is located between the first and third resonators. The first resonator includes a first inductor and a first capacitor. The second resonator includes a second inductor and a second capacitor. The third resonator includes a third inductor and a third capacitor. The second inductor is disposed at a position different from that of each of the first and third inductors in the stacking direction of the dielectric layers. The second inductor is lower in inductance than the first and third inductors. The second capacitor is higher in capacitance than the first and third capacitors.
    • 带通滤波器包括层叠结构,其包括多层堆叠介质层,以及设置在分层结构内的第一至第三谐振器。 在电路结构方面,第二谐振器位于第一和第三谐振器之间。 第一谐振器包括第一电感器和第一电容器。 第二谐振器包括第二电感器和第二电容器。 第三谐振器包括第三电感器和第三电容器。 第二电感器设置在与电介质层的层叠方向上的第一和第三电感器的位置不同的位置处。 第二电感器的电感比第一和第三电感器低。 第二电容器的电容高于第一和第三电容器。
    • 8. 发明授权
    • High frequency filter
    • 高频滤波器
    • US07463120B2
    • 2008-12-09
    • US11644007
    • 2006-12-22
    • Hideya MatsubaraShigemitsu TomakiShinichiro TodaAtsunori Okada
    • Hideya MatsubaraShigemitsu TomakiShinichiro TodaAtsunori Okada
    • H01P1/203
    • H01P1/20345
    • A high frequency filter comprises a first resonator and a second resonator provided inside a layered substrate. The first and second resonators are inductively coupled and capacitively coupled to each other through a first capacitor and a second capacitor connected to each other in parallel. The first capacitor is formed using first and third electrodes and a dielectric layer. The first electrode is connected to the first resonator via a through hole. The third electrode is connected to the second resonator and opposed to the first electrode. The second capacitor is formed using second and fourth electrodes and the dielectric layer. The second electrode is connected to the second resonator via a through hole. The fourth electrode is connected to the first resonator and opposed to the second electrode.
    • 高频滤波器包括设置在分层衬底内的第一谐振器和第二谐振器。 第一和第二谐振器通过并联连接的第一电容器和第二电容器彼此电感耦合和电容耦合。 第一电容器使用第一和第三电极和电介质层形成。 第一电极经由通孔与第一谐振器连接。 第三电极连接到第二谐振器并与第一电极相对。 第二电容器使用第二和第四电极和电介质层形成。 第二电极经由通孔与第二谐振器连接。 第四电极连接到第一谐振器并与第二电极相对。
    • 9. 发明申请
    • High frequency filter
    • 高频滤波器
    • US20070164840A1
    • 2007-07-19
    • US11643963
    • 2006-12-22
    • Hideya MatsubaraShigemitsu TomakiShinichiro TodaAtsunori Okada
    • Hideya MatsubaraShigemitsu TomakiShinichiro TodaAtsunori Okada
    • H01P1/203H01P5/10
    • H01P5/10H01P1/20345
    • A high frequency filter incorporates: an unbalanced input/output terminal; two balanced input/output terminals; two resonators respectively provided between the unbalanced input/output terminal and the two balanced input/output terminals; and a layered substrate for integrating components of the high frequency filter. The two resonators are inductively coupled to each other, and are also capacitively coupled to each other through two capacitors. Each of the two capacitors is formed using a pair of first and second electrodes and a dielectric layer. The first electrode is connected to one of the resonators via a through hole. The second electrode is connected to the other of the resonators and opposed to the first electrode forming the pair with the second electrode, the dielectric layer being disposed between the second electrode and the first electrode.
    • 高频滤波器包括:不平衡输入/输出端子; 两个平衡输入/输出端子; 分别设置在不平衡输入/输出端子和两个平衡输入/输出端子之间的两个谐振器; 以及用于对高频滤波器的部件进行积分的分层基板。 两个谐振器彼此电感耦合,并且还通过两个电容器彼此电容耦合。 两个电容器中的每一个使用一对第一和第二电极和电介质层形成。 第一电极经由通孔连接到谐振器中的一个。 第二电极连接到另一个谐振器,并与第二电极形成一对的第一电极相对,电介质层设置在第二电极和第一电极之间。
    • 10. 发明授权
    • High frequency filter
    • 高频滤波器
    • US07432786B2
    • 2008-10-07
    • US11654597
    • 2007-01-18
    • Shigemitsu TomakiShinichiro TodaHideya MatsubaraAtsunori Okada
    • Shigemitsu TomakiShinichiro TodaHideya MatsubaraAtsunori Okada
    • H01P1/20H01P3/08
    • H01P1/20345
    • A high frequency filter incorporates first to third resonators provided inside a layered substrate. The first and third resonators are adjacent to each other and inductively coupled to each other. The second and third resonators are also adjacent to each other and inductively coupled to each other. The first and second resonators are not adjacent to each other but are capacitively coupled to each other through a conductor layer for capacitive coupling. The conductor layer for capacitive coupling incorporates: a first portion for forming a first capacitor between itself and the first resonator; a second portion for forming a second capacitor between itself and the second resonator; and a third portion having an end connected to the first portion and the other end connected to the second portion, the ends being opposed to each other in the longitudinal direction. The width of at least part of the third portion is smaller than the width of each of the first portion and the second portion.
    • 高频滤波器包括设置在分层衬底内的第一至第三谐振器。 第一和第三谐振器彼此相邻并且彼此感应耦合。 第二和第三谐振器也彼此相邻并且彼此感应耦合。 第一和第二谐振器彼此不相邻,但是通过用于电容耦合的导体层彼此电容耦合。 用于电容耦合的导体层包括:用于在其自身和第一谐振器之间形成第一电容器的第一部分; 第二部分,用于在其自身与第二谐振器之间形成第二电容器; 以及第三部分,其端部连接到第一部分,另一端连接到第二部分,端部在纵向方向上彼此相对。 第三部分的至少一部分的宽度小于第一部分和第二部分的宽度。