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    • 2. 发明授权
    • Low hydrogen overvoltage cathode and process for production thereof
    • 低氢过电压阴极及其生产方法
    • US5944966A
    • 1999-08-31
    • US992457
    • 1997-12-17
    • Kazumasa SuetsuguKazuhisa YamaguchiKanji YoshimitsuTakashi Sakaki
    • Kazumasa SuetsuguKazuhisa YamaguchiKanji YoshimitsuTakashi Sakaki
    • C25B11/04C25B11/06C25B11/00
    • C25B11/0442C25B11/0489
    • A novel cathode of low hydrogen overvoltage is provided which is useful for electrolysis of water and electrolysis of an aqueous alkali metal chloride such as sodium chloride. A process for producing the cathode is also provided. The low hydrogen overvoltage cathode comprises an electroconductive base material; and a coating layer containing at least one organic compound selected from the group consisting of amino acids, monocarboxylic acids, dicarboxylic acids, monoamines, diamines, triamines, and tetramines, and derivatives thereof at a content of from 0.5% to 18% by weight in terms of carbon, and a metal component selected from the group consisting of nickel, nickel-iron, nickel-cobalt, and nickel-indium at an indium content ranging from 1% to 90% by weight. The process for producing the low hydrogen overvoltage cathode comprises conducting electrodeposition to form a coating layer on a surface of an electroconductive base material in a plating bath containing at least nickel ions, nickel and iron ions, nickel and cobalt ions, or nickel and indium ions, and containing additionally at least one organic compound selected from the group consisting of amino acids, monocarboxylic acids, dicarboxylic acids, monoamines, diamines, triamines, and tetramines, and derivatives thereof.
    • 提供了一种低氢过电压的新型阴极,可用于电解水和电解碱金属氯化物如氯化钠水溶液。 还提供了一种生产阴极的方法。 低氢过电压阴极包括导电基材; 以及包含至少一种选自氨基酸,单羧酸,二羧酸,单胺,二胺,三胺和四胺的有机化合物及其衍生物的涂层,其含量为0.5重量%至18重量% 碳含量和选自镍,镍 - 铁,镍 - 钴和镍 - 铟的金属成分,其铟含量为1重量%至90重量%。 制造低氢过电压阴极的方法包括进行电沉积以在至少含有镍离子,镍和铁离子,镍和钴离子或镍和铟离子的电镀浴中的导电基材的表面上形成涂层 ,另外还含有选自氨基酸,一元羧酸,二羧酸,单胺,二胺,三胺和四胺中的至少一种有机化合物及其衍生物。
    • 3. 发明授权
    • Low hydrogen overvoltage cathode and process for the production thereof
    • 低氢过电压阴极及其生产方法
    • US5948223A
    • 1999-09-07
    • US733420
    • 1996-10-18
    • Hideharu HorikoshiKazumasa SuetsuguTakashi SakakiKanji Yoshimitsu
    • Hideharu HorikoshiKazumasa SuetsuguTakashi SakakiKanji Yoshimitsu
    • C25B11/04C25B11/06C25B11/00
    • C25B11/0478Y10S420/90
    • A cathode of sufficiently low hydrogen overvoltage is provided which is useful in electrolysis of water or of an aqueous alkali metal chloride solution such as a sodium chloride solution. A process for producing the cathode is also provided. The low hydrogen overvoltage cathode has an electroconductive base material coated with an alloy layer containing nickel and molybdenum, the alloy layer containing the nickel at a content ranging from 35 to 90% by weight and the molybdenum at a content ranging from 10 to 65% by weight. The alloy laser has an X-ray diffraction (CuK.alpha. line) pattern with a main peak at an angle ranging from 42 to 45.degree. with a peak half width ranging from 0.4 to 7.degree.. One process for producing the low hydrogen overvoltage cathode of the present invention involves plating an electroconductive base material by an arc discharge type ion plating method. Another process for producing the low hydrogen overvoltage cathode of the present invention involves co-electrodepositing nickel and molybdenum onto an electroconductive base material in a plating bath.
    • 提供足够低的氢过电压的阴极,其可用于电解水或碱金属氯化物水溶液如氯化钠溶液。 还提供了一种生产阴极的方法。 低氢过电压阴极具有涂覆有含有镍和钼的合金层的导电基材,合金层含有含量范围为35-90%重量的镍,含量范围为10-65%的钼由 重量。 合金激光器具有X射线衍射(CuKα线)图案,主峰的角度范围为42至45°,峰半宽度范围为0.4至7°。 制造本发明的低氢过电压阴极的一个方法包括通过电弧放电型离子镀法镀覆导电基材。 制造本发明的低氢过电压阴极的另一种方法包括将镍和钼共同电沉积在镀浴中的导电基材上。
    • 7. 发明授权
    • Method of forming conductive layer and semiconductor device
    • 形成导电层和半导体器件的方法
    • US08173542B2
    • 2012-05-08
    • US12634619
    • 2009-12-09
    • Takashi Sakaki
    • Takashi Sakaki
    • H01L23/52
    • H01L21/76898H01L23/481H01L2924/0002H01L2924/12044H01L2924/00012H01L2924/00
    • Provided are a method of forming a conductive layer on an inner portion of a through-electrode in which uniform adhesion property of plating in the inner portion of a through-hole is enhanced and a tact time is short, and a semiconductor device. The method of forming a conductive layer includes: a first plating step of forming a first plating layer on the inner portion of the through-hole; a plating suppression layer forming step of forming a plating suppression layer including a material different from a material of the first plating layer in an opening portion of the through-hole after the first plating step; and a second plating step of forming a second plating layer by plating on the inner portion of the through-hole after the plating suppression layer forming step.
    • 提供一种在贯通电极的内部形成导电层的方法,其中贯通电极的内部部分中的镀层的均匀粘合性能增强并且节拍时间短,并且半导体器件。 形成导电层的方法包括:在通孔的内部形成第一镀层的第一镀层步骤; 电镀抑制层形成步骤,在第一电镀步骤之后,在所述通孔的开口部分中形成包括与所述第一镀层的材料不同的材料的镀覆抑制层; 以及第二电镀步骤,在镀覆抑制层形成步骤之后通过电镀在通孔的内部上形成第二镀层。