专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100041538A1 FUSED SILICA GLASS AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：熔融二氧化硅玻璃及其制造方法
公开(公告)号：US20100041538A1
公开(公告)日：2010-02-18
申请号：US12440683
申请日：2007-09-11
申请人： Kazuyoshi Arai , Tsutomu Takahata , Shinkichi Hasimoto , Masahito Uchida , Nobusuke Yamada , Yoshinori Harada , Hideharu Horikoshi
发明人： Kazuyoshi Arai , Tsutomu Takahata , Shinkichi Hasimoto , Masahito Uchida , Nobusuke Yamada , Yoshinori Harada , Hideharu Horikoshi
IPC分类号： C03C3/04 , C03C10/00
CPC分类号： C03C4/0085 , C03B19/066 , C03B20/00 , C03B2201/03 , C03B2201/04 , C03C3/06 , C03C4/10 , C03C2201/23 , C03C2201/50 , C03C2201/54 , Y02P40/57
摘要： Fused silica glass having an internal transmittance of UV with 245 nm wavelength, being at least 95% at 10 mm thickness, a OH content of not larger than 5 ppm, and a content of Li, Na, K, Mg, Ca and Cu each being smaller than 0.1 ppm. Preferably the glass has a viscosity coefficient at 1215° C. of at least 1011.5 Pa·s; and a Cu ion diffusion coefficient of not larger than 1×10−10 cm2/sec in a depth range of greater than 20 μm up to 100 μm, from the surface, when leaving to stand at 1050° C. in air for 24 hours. The glass is made by crystobalitizing powdery silica raw material; then, fusing the crystobalitized silica material in a non-reducing atmosphere. The glass exhibits a high transmittance of ultraviolet, visible and infrared rays, has high purity and heat resistance, and exhibits a reduced diffusion rate of metal impurities, therefore, it is suitable for various optical goods, semiconductor-production apparatus members, and liquid crystal display production apparatus members.
摘要翻译：具有245nm波长的UV的内部透射率，10mm厚度至少95％，OH含量不大于5ppm，Li，Na，K，Mg，Ca和Cu的含量的熔融石英玻璃小于0.1ppm。优选地，玻璃的1215℃下的粘度系数至少为1011.5Pa·s; 在大于20μm至100μm的深度范围内的Cu离子扩散系数不大于1×10 -10 cm 2 / sec，在1050℃在空气中放置24小时时，。玻璃由硅胶粉末二氧化硅原料精制而成; 然后，在非还原气氛中将经晶化的二氧化硅材料熔融。该玻璃的紫外线，可见光和红外线的透射率高，纯度高，耐热性高，金属杂质的扩散速度降低，因此适用于各种光学制品，半导体制造装置部件和液晶展示生产设备成员。

2. 发明授权

US08211817B2 Fused silica glass and process for producing the same 有权
标题翻译：熔融石英玻璃及其制造方法
公开(公告)号：US08211817B2
公开(公告)日：2012-07-03
申请号：US12440683
申请日：2007-09-11
申请人： Kazuyoshi Arai , Tsutomu Takahata , Shinkichi Hasimoto , Masahito Uchida , Nobusuke Yamada , Yoshinori Harada , Hideharu Horikoshi
发明人： Kazuyoshi Arai , Tsutomu Takahata , Shinkichi Hasimoto , Masahito Uchida , Nobusuke Yamada , Yoshinori Harada , Hideharu Horikoshi
IPC分类号： C03C3/06 , C03C10/16 , C03B27/012 , C03B19/01 , C03B19/00
CPC分类号： C03C4/0085 , C03B19/066 , C03B20/00 , C03B2201/03 , C03B2201/04 , C03C3/06 , C03C4/10 , C03C2201/23 , C03C2201/50 , C03C2201/54 , Y02P40/57
摘要： Fused silica glass having an internal transmittance of UV with 245 nm wavelength, being at least 95% at 10 mm thickness, a OH content of not larger than 5 ppm, and a content of Li, Na, K, Mg, Ca and Cu each being smaller than 0.1 ppm. Preferably the glass has a viscosity coefficient at 1215° C. of at least 1011.5 Pa·s; and a Cu ion diffusion coefficient of not larger than 1×10−10 cm2/sec in a depth range of greater than 20 μm up to 100 μm, from the surface, when leaving to stand at 1050° C. in air for 24 hours. The glass is made by cristobalitizing powdery silica raw material; then, fusing the cristobalitized silica material in a non-reducing atmosphere. The glass exhibits a high transmittance of ultraviolet, visible and infrared rays, has high purity and heat resistance, and exhibits a reduced diffusion rate of metal impurities, therefore, it is suitable for various optical goods, semiconductor-production apparatus members, and liquid crystal display production apparatus members.
摘要翻译：具有245nm波长的UV的内部透射率，10mm厚度至少95％，OH含量不大于5ppm，Li，Na，K，Mg，Ca和Cu的含量的熔融石英玻璃小于0.1ppm。优选地，玻璃的1215℃下的粘度系数至少为1011.5Pa·s; 在大于20μm至100μm的深度范围内的Cu离子扩散系数不大于1×10 -10 cm 2 / sec，在1050℃在空气中放置24小时时，。玻璃由粉状二氧化硅原料碎片化制成; 然后将非平衡二氧化硅材料在非还原气氛中熔融。该玻璃的紫外线，可见光和红外线的透射率高，纯度高，耐热性高，金属杂质的扩散速度降低，因此适用于各种光学制品，半导体制造装置部件和液晶展示生产设备成员。

3. 发明授权

US5948223A Low hydrogen overvoltage cathode and process for the production thereof 失效
标题翻译：低氢过电压阴极及其生产方法
公开(公告)号：US5948223A
公开(公告)日：1999-09-07
申请号：US733420
申请日：1996-10-18
申请人： Hideharu Horikoshi , Kazumasa Suetsugu , Takashi Sakaki , Kanji Yoshimitsu
发明人： Hideharu Horikoshi , Kazumasa Suetsugu , Takashi Sakaki , Kanji Yoshimitsu
IPC分类号： C25B11/04 , C25B11/06 , C25B11/00
CPC分类号： C25B11/0478 , Y10S420/90
摘要： A cathode of sufficiently low hydrogen overvoltage is provided which is useful in electrolysis of water or of an aqueous alkali metal chloride solution such as a sodium chloride solution. A process for producing the cathode is also provided. The low hydrogen overvoltage cathode has an electroconductive base material coated with an alloy layer containing nickel and molybdenum, the alloy layer containing the nickel at a content ranging from 35 to 90% by weight and the molybdenum at a content ranging from 10 to 65% by weight. The alloy laser has an X-ray diffraction (CuK.alpha. line) pattern with a main peak at an angle ranging from 42 to 45.degree. with a peak half width ranging from 0.4 to 7.degree.. One process for producing the low hydrogen overvoltage cathode of the present invention involves plating an electroconductive base material by an arc discharge type ion plating method. Another process for producing the low hydrogen overvoltage cathode of the present invention involves co-electrodepositing nickel and molybdenum onto an electroconductive base material in a plating bath.
摘要翻译：提供足够低的氢过电压的阴极，其可用于电解水或碱金属氯化物水溶液如氯化钠溶液。还提供了一种生产阴极的方法。低氢过电压阴极具有涂覆有含有镍和钼的合金层的导电基材，合金层含有含量范围为35-90％重量的镍，含量范围为10-65％的钼由重量。合金激光器具有X射线衍射（CuKα线）图案，主峰的角度范围为42至45°，峰半宽度范围为0.4至7°。制造本发明的低氢过电压阴极的一个方法包括通过电弧放电型离子镀法镀覆导电基材。制造本发明的低氢过电压阴极的另一种方法包括将镍和钼共同电沉积在镀浴中的导电基材上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式