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1. 发明申请

US20110192347A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICES MANUFACTURING METHOD 有权
公开(公告)号：US20110192347A1
公开(公告)日：2011-08-11
申请号：US13088907
申请日：2011-04-18
申请人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
发明人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
IPC分类号： H01L21/00 , C23C16/455 , C23C16/458 , C23C16/44
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.

2. 发明申请

US20110053382A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICES MANUFACTURING METHOD 有权
标题翻译：基板加工设备和半导体器件制造方法
公开(公告)号：US20110053382A1
公开(公告)日：2011-03-03
申请号：US12868089
申请日：2010-08-25
申请人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
发明人： Yoshihiko YANAGISAWA , Mitsuro TANABE , Harunobu SAKUMA , Tadashi TAKASAKI
IPC分类号： H01L21/18 , C23C16/56
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
摘要翻译：在处理室中进行基板的基板处理，并且提高面内膜厚的均匀性。排气单元排出处理室中的气氛，并且供应由激励单元激发的处理气体。旋转驱动单元水平地旋转支撑安装基板的安装基板的支撑单元; 并且冷却剂供给/排出单元通过连接单元连接到支撑单元的下端。衬底安装单元在其中具有冷却剂循环路径。支撑单元包括用于使冷却剂通过冷却剂循环路径的第一冷却剂流动路径。冷却剂供给/排出单元包括第二冷却剂流动路径。连接单元将第一冷却剂流动路径和第二冷却剂流动路径连接在一起，并且设置在处理室的外部。

3. 发明授权

US07943528B2 Substrate processing apparatus and semiconductor devices manufacturing method 有权
标题翻译：基板加工装置及半导体装置制造方法
公开(公告)号：US07943528B2
公开(公告)日：2011-05-17
申请号：US12868089
申请日：2010-08-25
申请人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
发明人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
IPC分类号： H01L21/46
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
摘要翻译：在处理室中进行基板的基板处理，并且提高面内膜厚的均匀性。排气单元排出处理室中的气氛，并且供应由激励单元激发的处理气体。旋转驱动单元水平地旋转支撑安装基板的安装基板的支撑单元; 并且冷却剂供给/排出单元通过连接单元连接到支撑单元的下端。衬底安装单元在其中具有冷却剂循环路径。支撑单元包括用于使冷却剂通过冷却剂循环路径的第一冷却剂流动路径。冷却剂供给/排出单元包括第二冷却剂流动路径。连接单元将第一冷却剂流动路径和第二冷却剂流动路径连接在一起，并且设置在处理室的外部。

4. 发明申请

US20090017641A1 Substrate processing apparatus and semiconductor device producing method 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US20090017641A1
公开(公告)日：2009-01-15
申请号：US11990696
申请日：2006-11-28
申请人： Yoshihiko Yanagisawa , Mitsuro Tanabe
发明人： Yoshihiko Yanagisawa , Mitsuro Tanabe
IPC分类号： H01L21/30 , F27D11/00
CPC分类号： C23C16/46 , H01L21/67109 , H01L21/67115
摘要： Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.
摘要翻译：公开了一种基板处理装置，包括：由金属制成的室，以形成用于处理基板的处理空间; 至少一个棒状加热体以加热基底; 以及由不同于所述室的材料制成的管体，以将所述加热体容纳在其中，其中所述管体在所述管体穿过所述室的壁的穿透部分的处理空间侧的外径被设定为小于在穿透部的室的外侧的管体的外径。

5. 发明授权

US08222161B2 Substrate processing apparatus and semiconductor devices manufacturing method 有权
标题翻译：基板加工装置及半导体装置制造方法
公开(公告)号：US08222161B2
公开(公告)日：2012-07-17
申请号：US13088907
申请日：2011-04-18
申请人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
发明人： Yoshihiko Yanagisawa , Mitsuro Tanabe , Harunobu Sakuma , Tadashi Takasaki
IPC分类号： H01L21/465
CPC分类号： C23C16/482 , C23C16/463
摘要： Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. A rotational drive unit horizontally rotates a support unit that supports a mounting substrate on which the substrate is mounted; and a coolant supply/discharge unit is connected to the lower end of the support unit through a connecting unit. The substrate mounting unit has a coolant circulation path therein. The support unit includes a first coolant flow path for passing coolant through the coolant circulation path. The coolant supply/discharge unit includes a second coolant flow path. The connecting unit connects the first coolant flow path and the second coolant flow path together and is provided outside the processing chamber.
摘要翻译：在处理室中进行基板的基板处理，并且提高面内膜厚的均匀性。排气单元排出处理室中的气氛，并且供应由激励单元激发的处理气体。旋转驱动单元水平地旋转支撑安装基板的安装基板的支撑单元; 并且冷却剂供给/排出单元通过连接单元连接到支撑单元的下端。衬底安装单元在其中具有冷却剂循环路径。支撑单元包括用于使冷却剂通过冷却剂循环路径的第一冷却剂流路。冷却剂供给/排出单元包括第二冷却剂流动路径。连接单元将第一冷却剂流动路径和第二冷却剂流动路径连接在一起，并且设置在处理室的外部。

6. 发明授权

US08172950B2 Substrate processing apparatus and semiconductor device producing method 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US08172950B2
公开(公告)日：2012-05-08
申请号：US11990696
申请日：2006-11-28
申请人： Yoshihiko Yanagisawa , Mitsuro Tanabe
发明人： Yoshihiko Yanagisawa , Mitsuro Tanabe
IPC分类号： H01L21/30 , F27D11/00
CPC分类号： C23C16/46 , H01L21/67109 , H01L21/67115
摘要： Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.
摘要翻译：公开了一种基板处理装置，包括：由金属制成的室，以形成用于处理基板的处理空间; 至少一个棒状加热体以加热基底; 以及由不同于所述室的材料制成的管体，以将所述加热体容纳在其中，其中所述管体在所述管体穿过所述室的壁的穿透部分的处理空间侧的外径被设定为小于在穿透部的室的外侧的管体的外径。

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