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1. 外观设计

USD634425S1 Instrument for removing scabs 有权
标题翻译：扫除痂的仪器
公开(公告)号：USD634425S1
公开(公告)日：2011-03-15
申请号：US29344172
申请日：2009-09-24
申请人： Kazuhiro Watanabe , Naoki Nakagawa , Yuki Hiraoka
设计人： Kazuhiro Watanabe , Naoki Nakagawa , Yuki Hiraoka

2. 发明申请

US20120112194A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

3. 发明申请

US20120020056A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20120020056A1
公开(公告)日：2012-01-26
申请号：US13259204
申请日：2010-04-23
申请人： Yusuke Yamagata , Naoki Nakagawa , Toshiaki Fujino , Takanori Okumura , Toshiyuki Yoneda , Toru Kokogawa , Kenji Arita
发明人： Yusuke Yamagata , Naoki Nakagawa , Toshiaki Fujino , Takanori Okumura , Toshiyuki Yoneda , Toru Kokogawa , Kenji Arita
IPC分类号： H05K7/00 , B32B37/12 , G09F13/04
CPC分类号： G09F9/33 , G02F1/133308 , G02F2001/133302 , G02F2001/133354 , G02F2202/28 , G09F9/35 , H01L51/0097
摘要： A display device where concentration of a stress in a display panel is suppressed, to allow improvement in display quality, reliability and the like. A display device includes a display panel, an adhesive layer and a supporting substrate. The adhesive layer is provided on the display panel. The supporting substrate is made up of a member previously provided with curved surfaces. The display panel is bonded onto the curved surface of the supporting substrate by the adhesive layer. The supporting substrate supports the display panel in a curved form along the curved surface.
摘要翻译：抑制显示面板中的应力集中的显示装置，能够提高显示质量，可靠性等。显示装置包括显示面板，粘合剂层和支撑基板。粘合剂层设置在显示面板上。支撑基板由预先设置有曲面的部件构成。显示面板通过粘合剂层粘合到支撑基板的弯曲表面上。支撑基板沿着曲面将弯曲形式支撑显示面板。

4. 发明申请

US20110198606A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110198606A1
公开(公告)日：2011-08-18
申请号：US13010281
申请日：2011-01-20
申请人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
发明人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
IPC分类号： H01L33/16 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/04
摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
摘要翻译：本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

5. 发明授权

US07834962B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US07834962B2
公开(公告)日：2010-11-16
申请号：US12330105
申请日：2008-12-08
申请人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
发明人： Tetsuya Satake , Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Takeshi Ono , Naoki Nakagawa , Suguru Nagae
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02F1/133305 , G02F1/133512 , G02F2001/133354
摘要： In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E−L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.
摘要翻译：在具有弯曲显示面的液晶显示器（10）中，像素结构（11）的长边沿着显示面的曲线方向（Y）配置，在相对基板的一侧设有具有黑色假设曲线中的显示面的长度，曲线方向（Y）的长度不长于E-L {（T1 / 2）+（T2 / 2）+ d} / R的矩阵开口41a 方向（Y）为L，阵列基板的厚度为T1，对置基板的厚度为T2，阵列基板与对置基板的间隔尺寸为d，曲面显示面的曲率半径是R，并且设置在每个像素结构（11）中的像素电极（29）的长边的长度为E.因此，由此可以抑制由于曲率而导致的两个基板的位置偏移导致的显示不均匀，并且提供实现高质量显示图像的液晶显示器。

6. 发明申请

US20090290113A1 DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090290113A1
公开(公告)日：2009-11-26
申请号：US12471970
申请日：2009-05-26
申请人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
发明人： Takumi Nakahata , Takanori Okumura , Yusuke Yamagata , Naoki Nakagawa , Masafumi Agari , Tetsuya Satake , Toru Kokogawa , Kenji Arita
IPC分类号： G02F1/1333 , B32B37/00
CPC分类号： B32B38/1866 , B32B2037/243 , B32B2309/10 , B32B2457/202 , G02F1/133305 , G02F2201/503
摘要： The display device includes a pair of insulating substrates arranged so as to be opposed, a bonding layer, and a strain suppressing plate. The bonding layer is provided on the outer surface side of one insulating substrate. The strain suppressing plate has rigidity higher than that of the insulating substrate to suppress the strain caused by curving the insulating substrate. The strain suppressing plate is fixed to the insulating substrate by the bonding layer.
摘要翻译：显示装置包括一对绝缘基板，其被布置为相对，接合层和应变抑制板。接合层设置在一个绝缘基板的外表面侧。应变抑制板的刚性高于绝缘基板的刚性，以抑制由于弯曲绝缘基板引起的应变。应变抑制板通过接合层固定在绝缘基板上。

7. 发明授权

US07553778B2 Method for producing a semiconductor device including crystallizing an amphorous semiconductor film 失效
标题翻译：一种半导体器件的制造方法，包括使两相半导体膜结晶化
公开(公告)号：US07553778B2
公开(公告)日：2009-06-30
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

8. 发明申请

US20090159884A1 THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，其制造方法和显示器件
公开(公告)号：US20090159884A1
公开(公告)日：2009-06-25
申请号：US12335806
申请日：2008-12-16
申请人： Koji ODA , Naoki Nakagawa , Takeshi Ono , Yusuke Uchida
发明人： Koji ODA , Naoki Nakagawa , Takeshi Ono , Yusuke Uchida
IPC分类号： H01L29/78 , H01L21/02
CPC分类号： H01L29/4908 , H01L29/66765
摘要： A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.
摘要翻译：根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。使用包括NH 3，N 2和SiH 4，H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域，并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此可以提供具有优异特性和高可靠性的薄膜晶体管，其制造方法以及安装在其上的薄膜晶体管的显示装置。

9. 发明申请

US20060183304A1 Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060183304A1
公开(公告)日：2006-08-17
申请号：US11356288
申请日：2006-02-17
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Atsuhiro Sono , Shinsuke Yura , Kazushi Yamayoshi
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02691 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A method for producing a semiconductor device includes irradiating an amorphous semiconductor film on an insulating material with a pulsed laser beam having a rectangular irradiation area, while scanning in a direction intersecting a longitudinal direction of the irradiation area, thereby forming a first polycrystalline semiconductor film, and irradiating a part of the amorphous semiconductor film with the laser beam, while scanning in a longitudinal direction intersecting the irradiation area, the part superposing the first polycrystalline semiconductor film and being adjacent to the first polycrystalline semiconductor film, thereby forming a second polycrystalline semiconductor film. The laser beam has a wavelength in a range from 390 nm to 640 nm, and the amorphous semiconductor film has a thickness in a range from 60 nm to 100 nm.
摘要翻译：一种制造半导体器件的方法包括：在具有矩形照射区域的脉冲激光束的绝缘材料上照射非晶半导体膜，同时沿与照射区域的纵向相交的方向扫描，从而形成第一多晶半导体膜，以及在与所述照射区域交叉的纵向方向上扫描所述非晶半导体膜的一部分，所述半导体膜与所述第一多晶半导体膜重叠，并且与所述第一多晶半导体膜相邻，从而形成第二多晶半导体膜。激光束的波长为390nm〜640nm，非晶半导体膜的厚度为60nm〜100nm。

10. 发明授权

US5424857A Matrix-type display apparatus with conductor wire interconnecting capacitor electrodes 失效
标题翻译：具有互连电容电极导体线的矩阵式显示装置
公开(公告)号：US5424857A
公开(公告)日：1995-06-13
申请号：US263084
申请日：1994-06-21
申请人： Hironori Aoki , Naoki Nakagawa , Tatsuya Nakayama
发明人： Hironori Aoki , Naoki Nakagawa , Tatsuya Nakayama
IPC分类号： G02F1/133 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/1368 , G02F2001/13629
摘要： A matrix-type display having a TFT substrate provided with at least a pixel electrode and a thin film transistor; and an opposing electrode; wherein a material for changing an optical property is interposed between the TFT substrate and the opposing electrode; a plurality of thin film transistors arrange in a matrix array on a transparent insulative substrate, each of the thin film transistors being provided to each pixel; a gate signal line interconnecting respective gate electrodes of the thin film transistors arrange in a row or column of the matrix array; a source electrode line interconnecting respective source or drain electrodes of thin film transistor arranged in a column or row of the matrix array; a pixel electrode formed of a transparent conductor film and connected to the source or drain electrode of each of the thin film transistors; a capacitor electrode capacitively coupled to the pixel electrode through a dielectric film; a conductor wire interconnecting the respective capacitive electrode of the pixels interconnected by the gate signal line, wherein the conductor wire is formed integrally with the capacitor electrode, wherein the gate signal line is formed above the conductor wire with the dielectric film intervening therebetween, and wherein the conductor wire interconnecting the respective capacitor electrode of the pixels arranged along the gate signal line.
摘要翻译：具有设置有至少像素电极和薄膜晶体管的TFT基板的矩阵型显示器; 和相对电极; 其中用于改变光学特性的材料插入在所述TFT基板和所述相对电极之间; 将多个薄膜晶体管以矩阵阵列排列在透明绝缘基板上，每个薄膜晶体管设置在每个像素上; 互连所述薄膜晶体管的各个栅极的栅极信号线，排列成矩阵阵列的一行或一列; 源极电极线，其互连布置在矩阵阵列的列或行中的薄膜晶体管的各个源极或漏极; 由透明导体膜形成并连接到每个薄膜晶体管的源极或漏极的像素电极; 通过电介质膜电容耦合到像素电极的电容器电极; 将由栅极信号线互连的像素的各个电容电极互连的导体线，其中，导体线与电容器电极一体地形成，其中栅极信号线形成在导体线之上，电介质膜介于其间，其中所述导体线将沿着栅极信号线布置的像素的各个电容电极互连。

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