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1. 发明申请

US20080006895A1 Surface illuminated photodiode and optical receiver module 有权
标题翻译：表面照明光电二极管和光接收模块
公开(公告)号：US20080006895A1
公开(公告)日：2008-01-10
申请号：US11702203
申请日：2007-02-05
申请人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
发明人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
IPC分类号： H01L31/075
CPC分类号： H01L31/075 , H01L31/022408 , Y02E10/548
摘要： In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.
摘要翻译：在使用重掺杂半导体材料形成的台面型PIN-PD中，当入射到光接收部分中的光透射通过吸收层并到达重掺杂层时，在重掺杂层中出现慢载流子时，高频响应降低靠近基板的一侧。在pin多层结构中，通过蚀刻或选择性生长技术，预先使与基底附近一侧的重掺杂层的光接收部分对应的部分比光接收部分的周边薄，并且生长另一重掺杂层以形成台面结构的光接收部分。这使得可以形成良好的欧姆接触并实现具有优异的高频响应特性的PIN-PD。

2. 发明授权

US07687874B2 Surface illuminated photodiode and optical receiver module 有权
标题翻译：表面照明光电二极管和光接收模块
公开(公告)号：US07687874B2
公开(公告)日：2010-03-30
申请号：US11702203
申请日：2007-02-05
申请人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
发明人： Kazuhiro Komatsu , Yasushi Sakuma , Daisuke Nakai , Kaoru Okamoto , Ryu Washino
IPC分类号： H01L31/105 , H01L29/868
CPC分类号： H01L31/075 , H01L31/022408 , Y02E10/548
摘要： In a mesa type PIN-PD formed using a heavily doped semiconductor material, a high frequency response is degraded as slow carriers occur in a heavily doped layer when light incident into a light receiving section transmits through an absorbing layer and reaches the heavily doped layer on a side near the substrate. In a p-i-n multilayer structure, a portion corresponding to a light receiving section of a heavily doped layer on a side near a substrate is previously made thinner than the periphery of the light receiving section by an etching or selective growth technique, over which an absorbing layer and another heavily doped layer are grown to form the light receiving section of mesa structure. This makes it possible to form a good ohmic contact and to realize a PIN-PD with excellent high frequency response characteristics.
摘要翻译：在使用重掺杂半导体材料形成的台面型PIN-PD中，当入射到光接收部分中的光透射通过吸收层并到达重掺杂层时，在重掺杂层中出现慢载流子时，高频响应降低靠近基板的一侧。在pin多层结构中，通过蚀刻或选择性生长技术，预先使与基底附近一侧的重掺杂层的光接收部分对应的部分比光接收部分的周边薄，并且生长另一重掺杂层以形成台面结构的光接收部分。这使得可以形成良好的欧姆接触并实现具有优异的高频响应特性的PIN-PD。

3. 发明申请

US20080013582A1 Semiconductor laser device and method of manufacturing the same 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080013582A1
公开(公告)日：2008-01-17
申请号：US11708135
申请日：2007-02-20
申请人： Kaoru Okamoto , Ryu Washino , Kazuhiro Komatsu , Yasushi Sakuma
发明人： Kaoru Okamoto , Ryu Washino , Kazuhiro Komatsu , Yasushi Sakuma
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/1231 , H01S5/125 , H01S5/34306 , H01S5/34313
摘要： A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.
摘要翻译：提供了一种制造能够减少kappa的半导体激光装置的方法，其制造限制被满足。在分布反馈或分布反射半导体激光器件中，在埋入衍射光栅的再生长之前，将卤素基气体引入反应器，并在衍射光栅上进行蚀刻，使得每个侧壁具有至少两个或更多的晶面和波导方向的上侧与平行于（100）面的底面的长度的比率为0〜0.3。并且，在再生长温度升高时，衍射光栅的侧面和衍射光栅的条纹之间的沟槽部分中形成的反应产物被去除。因此，获得具有降低的高度和正弦波形的衍射光栅，从而减小了器件的κ。因此，可以提高振荡阈值和光输出效率。

4. 发明授权

US07855093B2 Semiconductor laser device and method of manufacturing the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07855093B2
公开(公告)日：2010-12-21
申请号：US12572720
申请日：2009-10-02
申请人： Kaoru Okamoto , Ryu Washino , Kazuhiro Komatsu , Yasushi Sakuma
发明人： Kaoru Okamoto , Ryu Washino , Kazuhiro Komatsu , Yasushi Sakuma
IPC分类号： H01L21/30
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/1231 , H01S5/125 , H01S5/34306 , H01S5/34313
摘要： A method of manufacturing semiconductor laser device capable of reducing κL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction grating, halogen-based gas is introduced to a reactor, and etching is performed on the diffraction grating so that each side wall has at least two or more crystal faces and a ratio of length of an upper side in a waveguide direction to a bottom side parallel to a (100) surface is 0 to 0.3. And, a reactive product formed on side surfaces of the diffraction grating and in trench portions between stripes of the diffraction grating at an increase of temperature for regrowth is removed. Therefore, the diffraction grating with reduced height and a sine wave shape is obtained, thereby κL of the device is reduced. Thus, an oscillation threshold and optical output efficiency can be improved.
摘要翻译：提供了一种制造半导体激光器件的方法，该半导体激光器装置能够在制造限制满足的情况下降低L。在分布反馈或分布反射半导体激光器件中，在埋入衍射光栅的再生长之前，将卤素基气体引入反应器，并在衍射光栅上进行蚀刻，使得每个侧壁具有至少两个或更多的晶面和波导方向的上侧与平行于（100）面的底面的长度的比率为0〜0.3。并且，在再生长温度升高时，衍射光栅的侧面和衍射光栅的条纹之间的沟槽部分中形成的反应产物被去除。因此，获得具有降低的高度和正弦波形的衍射光栅，从而减小了器件的衰减。因此，可以提高振荡阈值和光输出效率。

5. 发明授权

US07998766B2 Semiconductor element and manufacturing method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07998766B2
公开(公告)日：2011-08-16
申请号：US12108553
申请日：2008-04-24
申请人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
发明人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
IPC分类号： H01L21/00
CPC分类号： H01S5/0265 , H01S5/0425
摘要： A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
摘要翻译：提供半导体元件和半导体元件的制造方法。脊形波导型半导体集成元件包括：EA部分的电极和LD部分的电极，被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离，并且其中每个电极形成在上表面的至少一部分的上表面和边缘上表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。

6. 发明申请

US20090065901A1 Semiconductor Element and Manufacturing Method Thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20090065901A1
公开(公告)日：2009-03-12
申请号：US12108553
申请日：2008-04-24
申请人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
发明人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01S5/0265 , H01S5/0425
摘要： A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
摘要翻译：提供半导体元件和半导体元件的制造方法。脊形波导型半导体集成元件包括：EA部分的电极和LD部分的电极，被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离，并且其中每个电极形成在上表面的至少一部分的上表面和边缘上表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。

7. 发明申请

US20080036044A1 SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20080036044A1
公开(公告)日：2008-02-14
申请号：US11832248
申请日：2007-08-01
申请人： Yasushi Sakuma , Kazuhiro Komatsu , Shigenori Hayakawa , Daisuke Nakai
发明人： Yasushi Sakuma , Kazuhiro Komatsu , Shigenori Hayakawa , Daisuke Nakai
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2086 , H01S5/209 , H01S2301/173
摘要： To eliminate generation of a damaged layer caused by dry etching of a contact layer, occurring in a manufacturing process of a ridge waveguide type semiconductor laser, and to improve reliability and yield thereof, a method is provided involving forming a spacer layer and a damage receptor layer on the contact layer, making the two layer absorb damage caused by dry etching a passivation film in an upper portion of the ridge waveguide structure, and thereafter removing the damaged layer by the dry etching, by selective removal by wet etching.
摘要翻译：为了消除在脊波导型半导体激光器的制造过程中发生的接触层的干蚀刻产生的损伤层，并且为了提高其可靠性和产率，提供了一种方法，包括形成间隔层和损伤受体层，从而使两层吸收在脊形波导结构的上部干蚀刻钝化膜所造成的损伤，然后通过干蚀刻选择性去除而去除受损层。

8. 发明授权

US07335328B2 Method for manufacturing multilayer ceramic capacitor 有权
标题翻译：多层陶瓷电容器制造方法
公开(公告)号：US07335328B2
公开(公告)日：2008-02-26
申请号：US10502602
申请日：2003-10-24
申请人： Kazuki Hirata , Kenji Oka , Kazuhiro Komatsu , Atsuo Nagai
发明人： Kazuki Hirata , Kenji Oka , Kazuhiro Komatsu , Atsuo Nagai
IPC分类号： H01G4/00 , C04B33/32
CPC分类号： H01G4/30 , H01G4/1227
摘要： A method of manufacturing a multilayer ceramic capacitor includes the steps of: preparing a mixture of a raw material powder mainly composed of barium titanate particles; forming the mixture and a binder into a green sheet; alternately layering the green sheet and an internal electrode to obtain a laminated body; and sintering the laminated body. The step of preparing the mixture includes the steps of: introducing the raw material powder and the dispersion medium into a mixing container, and stirring them with balls serving as a mixing medium, to obtain a slurry containing a raw material powder mixture; and drying the slurry. The mixing medium has a diameter that is equal to or less than 400 times the mean particle size of the barium titanate particles of the raw material. The present invention provides a multilayer ceramic capacitor having good DC bias characteristics by suppressing the variation in crystal particles.
摘要翻译：制造多层陶瓷电容器的方法包括以下步骤：制备主要由钛酸钡颗粒组成的原料粉末的混合物; 将所述混合物和粘合剂形成生片; 交替层叠生片和内部电极以获得层压体; 并烧结层叠体。制备混合物的步骤包括以下步骤：将原料粉末和分散介质引入混合容器中，并用作为混合介质的滚珠搅拌，得到含有原料粉末混合物的浆料; 并干燥浆料。混合介质的直径等于或小于原料的钛酸钡颗粒的平均粒度的400倍。本发明通过抑制晶体颗粒的变化来提供具有良好DC偏置特性的多层陶瓷电容器。

9. 发明授权

US07213097B2 Electronic control unit and electronic driving unit 失效
标题翻译：电子控制单元和电子驱动单元
公开(公告)号：US07213097B2
公开(公告)日：2007-05-01
申请号：US10763318
申请日：2004-01-26
申请人： Tomohide Kasame , Yoshikazu Hashimoto , Yuichiro Shimizu , Nobunori Asayama , Akio Okahara , Kazuhiro Komatsu , Takashi Higuchi
发明人： Tomohide Kasame , Yoshikazu Hashimoto , Yuichiro Shimizu , Nobunori Asayama , Akio Okahara , Kazuhiro Komatsu , Takashi Higuchi
IPC分类号： G06F13/00
CPC分类号： G06F15/7867
摘要： An input processing circuit is interposed between input terminals and input ports of an MPU. An output processing circuit is interposed between output ports of the MPU and output terminals. The input processing circuit includes switch sections and processing sections. The output processing circuit includes switch sections and processing sections. A switch control section switches the switch sections based on switch information stored in a switch information storage section to switch a connection relationship between the input terminals and the input ports, processing for an input signal, a connection relationship between the output ports and the output terminals, and processing for an output signal.
摘要翻译：在MPU的输入端子和输入端口之间插入输入处理电路。输出处理电路插在MPU的输出端口和输出端子之间。输入处理电路包括开关部分和处理部分。输出处理电路包括开关部分和处理部分。开关控制部根据开关信息存储部中存储的开关信息切换开关部，切换输入端子与输入端口的连接关系，输入信号的处理，输出端口与输出端子的连接关系，以及输出信号的处理。

10. 发明申请

US20060279893A1 Method for preventing corrosion of contact and apparatus for preventing corrosion of contact 有权
公开(公告)号：US20060279893A1
公开(公告)日：2006-12-14
申请号：US11391637
申请日：2006-03-29
申请人： Kazuhiro Komatsu , Tomohide Kasame , Kouji Oonishi
发明人： Kazuhiro Komatsu , Tomohide Kasame , Kouji Oonishi
IPC分类号： H02H5/04
CPC分类号： H01H1/605
摘要： An apparatus for preventing corrosion of a contact includes a detection conducting path connected to the contact, a variable impedance unit and a comparing and switching unit. The variable impedance unit is connected to the detection conducting path. The variable impedance unit is switchable between (i) a first impedance used for passing a corrosion prevention current into the detection conducting path and (ii) a second impedance through used for passing a current, which is used for detecting a connection state of the contact, into the detection conducting path. The first impedance is lower than the second impedance. The comparing and switching unit compares a detected value with a corrosion threshold, compares the detected value with a restoration threshold and switches the variable impedance unit based on comparing results.

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