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1. 发明授权

US07998766B2 Semiconductor element and manufacturing method thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US07998766B2
公开(公告)日：2011-08-16
申请号：US12108553
申请日：2008-04-24
申请人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
发明人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
IPC分类号： H01L21/00
CPC分类号： H01S5/0265 , H01S5/0425
摘要： A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
摘要翻译：提供半导体元件和半导体元件的制造方法。脊形波导型半导体集成元件包括：EA部分的电极和LD部分的电极，被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离，并且其中每个电极形成在上表面的至少一部分的上表面和边缘上表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。

2. 发明申请

US20090065901A1 Semiconductor Element and Manufacturing Method Thereof 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20090065901A1
公开(公告)日：2009-03-12
申请号：US12108553
申请日：2008-04-24
申请人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
发明人： Yasushi Sakuma , Daisuke Nakai , Shigenori Hayakawa , Kazuhiro Komatsu
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01S5/0265 , H01S5/0425
摘要： A semiconductor element and a manufacturing method of the semiconductor element are provided. A ridge waveguide type semiconductor integrated element includes: an electrode of an EA portion and an electrode of an LD portion which are arranged so as to be away from each other; a contact layer of the EA portion and a contact layer of the LD portion which are arranged so as to be away from each other and in each of which the electrode is formed on an upper surface and an edge of at least a part of the upper surface is set to the same electric potential as that of the electrode; a passivation film as an insulative concave/convex structure extending from an edge of one of the two contact layers to an edge of the other contact layer; and a polyimide resin for embedding the passivation film.
摘要翻译：提供半导体元件和半导体元件的制造方法。脊形波导型半导体集成元件包括：EA部分的电极和LD部分的电极，被布置为彼此远离; EA部分的接触层和LD部分的接触层被布置成彼此远离，并且其中每个电极形成在上表面的至少一部分的上表面和边缘上表面设置为与电极相同的电位; 作为从所述两个接触层中的一个的边缘延伸到所述另一接触层的边缘的绝缘性凹/凸结构的钝化膜; 以及用于嵌入钝化膜的聚酰亚胺树脂。

3. 发明申请

US20080036044A1 SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20080036044A1
公开(公告)日：2008-02-14
申请号：US11832248
申请日：2007-08-01
申请人： Yasushi Sakuma , Kazuhiro Komatsu , Shigenori Hayakawa , Daisuke Nakai
发明人： Yasushi Sakuma , Kazuhiro Komatsu , Shigenori Hayakawa , Daisuke Nakai
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： H01S5/22 , H01S5/0425 , H01S5/2086 , H01S5/209 , H01S2301/173
摘要： To eliminate generation of a damaged layer caused by dry etching of a contact layer, occurring in a manufacturing process of a ridge waveguide type semiconductor laser, and to improve reliability and yield thereof, a method is provided involving forming a spacer layer and a damage receptor layer on the contact layer, making the two layer absorb damage caused by dry etching a passivation film in an upper portion of the ridge waveguide structure, and thereafter removing the damaged layer by the dry etching, by selective removal by wet etching.
摘要翻译：为了消除在脊波导型半导体激光器的制造过程中发生的接触层的干蚀刻产生的损伤层，并且为了提高其可靠性和产率，提供了一种方法，包括形成间隔层和损伤受体层，从而使两层吸收在脊形波导结构的上部干蚀刻钝化膜所造成的损伤，然后通过干蚀刻选择性去除而去除受损层。

4. 发明申请

US20080203404A1 OPTICAL SEMICONDUCTOR DEVICE 有权
标题翻译：光学半导体器件
公开(公告)号：US20080203404A1
公开(公告)日：2008-08-28
申请号：US12023177
申请日：2008-01-31
申请人： Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
发明人： Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01S5/0425 , H01L31/0224 , H01S5/22
摘要： In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
摘要翻译：在发射或接收与形成在半导体衬底上的有源表面基本垂直或平行的光的光学半导体器件中，光学半导体器件，形成在有源表面侧并连接到有源表面的电极是阶梯形或在电极端部呈锥形。光半导体器件的电极由包括粘合剂层，扩散防止层和Au层的三层形成，并且通过Au层的厚度或厚度的差异来形成台阶状或带状构造的粘合层/扩散防止层/ Au层。

5. 发明授权

US08488918B2 Semiconductor optical device, optical transmitter module, optical transceiver module, and optical transmission equipment 有权
标题翻译：半导体光器件，光发射模块，光收发模块和光传输设备
公开(公告)号：US08488918B2
公开(公告)日：2013-07-16
申请号：US13108176
申请日：2011-05-16
申请人： Seiji Sumi , Shigenori Hayakawa , Kaoru Okamoto , Shunya Yamauchi , Yasushi Sakuma
发明人： Seiji Sumi , Shigenori Hayakawa , Kaoru Okamoto , Shunya Yamauchi , Yasushi Sakuma
IPC分类号： G02F1/035
CPC分类号： G02F1/017 , B82Y20/00
摘要： Provided is a semiconductor optical device, which has a buried heterostructure structure and is formed in a structure capable of reducing a parasitic capacitance to further improve characteristics thereof, and also provided are an optical transmitter module, an optical transceiver module, and an optical transmission equipment. The semiconductor optical device includes a modulator portion for modulating light input along an emitting direction and radiating the modulated light, the modulator portion including: a mesa-stripe structure, which includes an active layer and extends in the emitting direction; and a buried layer provided adjacent to each side of the mesa-stripe structure, in which a distance between a lower surface of the buried layer and a lower surface of the active layer is 20% or more of a distance between the lower surface and an upper surface of the buried layer.
摘要翻译：提供一种半导体光学器件，其具有掩埋异质结构结构，并且形成为能够降低寄生电容以进一步提高其特性的结构，并且还提供了一种光发射器模块，光收发器模块和光传输设备。半导体光学器件包括用于调制沿着发射方向输入的光并调制光的调制器部分，所述调制器部分包括：台面条状结构，其包括有源层并沿发射方向延伸; 以及与所述台面条状结构的每一侧相邻设置的掩埋层，其中所述掩埋层的下表面与所述有源层的下表面之间的距离为所述下表面和所述有源层的下表面之间的距离的20％埋层的上表面。

6. 发明授权

US07687295B2 Method for manufacturing optical semiconductor device 有权
标题翻译：光半导体器件的制造方法
公开(公告)号：US07687295B2
公开(公告)日：2010-03-30
申请号：US12023177
申请日：2008-01-31
申请人： Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
发明人： Ryu Washino , Susumu Sorimachi , Daisuke Nakai , Kaoru Okamoto , Shigenori Hayakawa
IPC分类号： H01L21/00 , H01L29/26
CPC分类号： H01S5/0425 , H01L31/0224 , H01S5/22
摘要： In an optical semiconductor device that emits or receives light substantially perpendicularly to or in parallel to an active surface formed on a semiconductor substrate, the optical semiconductor device, an electrode that is formed on the active surface side and connected to the active surface is stepped or tapered at an end of the electrode. The electrode of the optical semiconductor device is formed of three layers including an adhesive layer, a diffusion prevention layer, and an Au layer, and the stepped configuration or the taped configuration is formed by a difference of the thickness of the Au layer or the thickness of the adhesive layer/diffusion prevention layer/Au layer.
摘要翻译：在发射或接收与形成在半导体衬底上的有源表面基本垂直或平行的光的光学半导体器件中，光学半导体器件，形成在有源表面侧并连接到有源表面的电极是阶梯形或在电极端部呈锥形。光半导体器件的电极由包括粘合剂层，扩散防止层和Au层的三层形成，并且通过Au层的厚度或厚度的差异来形成台阶状或带状构造的粘合层/扩散防止层/ Au层。

7. 发明授权

US5200288A Electrostatic developing toner with hydroxyaromatic carboxylic acid additive 失效
标题翻译：含羟基羧酸添加剂的静电开发助剂
公开(公告)号：US5200288A
公开(公告)日：1993-04-06
申请号：US804981
申请日：1991-12-11
申请人： Osamu Ando , Masako Takeuchi , Hitoshi Ono , Toshiyuki Sueyoshi , Shigenori Hayakawa
发明人： Osamu Ando , Masako Takeuchi , Hitoshi Ono , Toshiyuki Sueyoshi , Shigenori Hayakawa
IPC分类号： G03G9/097
CPC分类号： G03G9/09733
摘要： An electrostatic image-developing toner comprising at least a resin and a colorant, which contains at least one compound selected from the group consisting of a hydroxynaphthlenecarboxylic acid compound, a hydroxyanthracenecarboxylic acid compound, a bishydroxynaphthalenecarboxylic acid compound a bishydroxyanthracenecarboxylic acid compound, and a metal compound of a pamo acid-type compound.

8. 发明授权

US07772052B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07772052B2
公开(公告)日：2010-08-10
申请号：US10983584
申请日：2004-11-09
申请人： Shigenori Hayakawa
发明人： Shigenori Hayakawa
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L21/26506 , H01L21/26513 , H01L27/12 , H01L27/1277 , H01L27/1288 , H01L29/78621 , H01L29/78645 , H01L29/78675
摘要： There is provided a method of manufacturing a semiconductor device, in which removal of the resist after ion implantation becomes easy. In order to solve the above problem, the manufacturing method includes a step of removing a resist mask after a step of implanting an ion of a rare gas element. Also, another manufacturing method includes a first step of implanting an ion of an impurity element for imparting a conductivity type, a second step of implanting an ion of a rare gas element, and a third step of removing a resist mask after the first step and the second step.
摘要翻译：提供一种制造半导体器件的方法，其中离子注入后抗蚀剂的去除变得容易。为了解决上述问题，制造方法包括在注入稀有气体元素的离子的步骤之后去除抗蚀剂掩模的步骤。此外，另一种制造方法包括：注入用于赋予导电类型的杂质元素的离子的第一步骤，注入稀有气体元素的离子的第二步骤;以及在第一步骤之后去除抗蚀剂掩模的第三步骤;以及第二步。

9. 发明授权

US06833313B2 Method of manufacturing semiconductor device by implanting rare gas ions 有权
标题翻译：通过注入稀有气体离子制造半导体器件的方法
公开(公告)号：US06833313B2
公开(公告)日：2004-12-21
申请号：US10119318
申请日：2002-04-10
申请人： Shigenori Hayakawa
发明人： Shigenori Hayakawa
IPC分类号： H01L21425
CPC分类号： H01L29/66757 , H01L21/26506 , H01L21/26513 , H01L27/12 , H01L27/1277 , H01L27/1288 , H01L29/78621 , H01L29/78645 , H01L29/78675
摘要： There is provided a method of manufacturing a semiconductor device, in which removal of the resist after ion implantation becomes easy. In order to solve the above problem, the manufacturing method includes a step of removing a resist mask after a step of implanting an ion of a rare gas element. Also, another manufacturing method includes a first step of implanting an ion of an impurity element for imparting a conductivity type, a second step of implanting an ion of a rare gas element, and a third step of removing a resist mask after the first step and the second step.
摘要翻译：提供一种制造半导体器件的方法，其中离子注入后抗蚀剂的去除变得容易。为了解决上述问题，制造方法包括在注入稀有气体元素的离子的步骤之后去除抗蚀剂掩模的步骤。此外，另一种制造方法包括：注入用于赋予导电类型的杂质元素的离子的第一步骤，注入稀有气体元素的离子的第二步骤;以及在第一步骤之后去除抗蚀剂掩模的第三步骤;以及第二步。

10. 发明申请

US20050064685A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050064685A1
公开(公告)日：2005-03-24
申请号：US10983584
申请日：2004-11-09
申请人： Shigenori Hayakawa
发明人： Shigenori Hayakawa
IPC分类号： H01L21/265 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/425
CPC分类号： H01L29/66757 , H01L21/26506 , H01L21/26513 , H01L27/12 , H01L27/1277 , H01L27/1288 , H01L29/78621 , H01L29/78645 , H01L29/78675
摘要： There is provided a method of manufacturing a semiconductor device, in which removal of the resist after ion implantation becomes easy. In order to solve the above problem, the manufacturing method includes a step of removing a resist mask after a step of implanting an ion of a rare gas element. Also, another manufacturing method includes a first step of implanting an ion of an impurity element for imparting a conductivity type, a second step of implanting an ion of a rare gas element, and a third step of removing a resist mask after the first step and the second step.
摘要翻译：提供一种制造半导体器件的方法，其中离子注入后抗蚀剂的去除变得容易。为了解决上述问题，制造方法包括在注入稀有气体元素的离子的步骤之后去除抗蚀剂掩模的步骤。此外，另一种制造方法包括：注入用于赋予导电类型的杂质元素的离子的第一步骤，注入稀有气体元素的离子的第二步骤;以及在第一步骤之后去除抗蚀剂掩模的第三步骤;以及第二步。

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