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    • 6. 发明授权
    • Nonvolatile memory device with reduced current consumption
    • 具有降低电流消耗的非易失性存储器件
    • US08259505B2
    • 2012-09-04
    • US12789522
    • 2010-05-28
    • Kazuhiko Oyama
    • Kazuhiko Oyama
    • G11C16/04G11C7/02
    • G11C16/28
    • A nonvolatile memory device includes one or more reference cell transistors, one or more memory cell transistors, and a current source circuit including three or more field effect transistors that have gates thereof connected together, the three or more field effect transistors including two or more field effect transistors and another field effect transistor, currents flowing through the two or more field effect transistors being combined to flow through the one or more reference cell transistors, and another field effect transistor having a drain thereof connected to one of the one or more memory cell transistors.
    • 非易失性存储器件包括一个或多个参考单元晶体管,一个或多个存储单元晶体管,以及包括三个或更多个其栅极连接在一起的场效应晶体管的电流源电路,所述三个或更多个场效应晶体管包括两个或更多个场 效应晶体管和另一个场效应晶体管,流经两个或更多个场效应晶体管的电流被组合以流过一个或多个参考单元晶体管,以及另一场效应晶体管,其漏极连接到一个或多个存储单元之一 晶体管。