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1. 发明申请

US20090065929A1 MULTI-CHIP SEMICONDUCTOR DEVICE 失效
标题翻译：多芯片半导体器件
公开(公告)号：US20090065929A1
公开(公告)日：2009-03-12
申请号：US12264970
申请日：2008-11-05
申请人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
发明人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
IPC分类号： H01L23/34
CPC分类号： H01L27/14618 , H01L23/498 , H01L23/49838 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14634 , H01L2224/05553 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48644 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2224/85444 , H01L2225/0651 , H01L2225/06527 , H01L2225/06575 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
摘要翻译：半导体器件包括不同于耐电压或抗噪声的诸如多芯片模块的半导体芯片。半导体器件包括安装在封装衬底上的第一和第二半导体芯片，该封装衬底具有沿边缘布置的焊盘。第一半导体芯片包括用于模拟信号的接合焊盘，第二半导体芯片包括用于高电压信号的焊盘。布置用于模拟信号的接合焊盘的边缘以及布置有用于高电压信号的接合焊盘的边缘沿着封装衬底的相互不同的边缘设置。可以容易地避免用于高电压信号的电极或布线与封装基板上的模拟信号的连接，从而可以抑制SI劣化。

2. 发明授权

US07462929B2 Semiconductor device and an image sensing device 失效
标题翻译：半导体器件和图像感测器件
公开(公告)号：US07462929B2
公开(公告)日：2008-12-09
申请号：US11392730
申请日：2006-03-30
申请人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
发明人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
IPC分类号： H01L23/02 , H01L23/34
CPC分类号： H01L27/14618 , H01L23/498 , H01L23/49838 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14634 , H01L2224/05553 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48644 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2224/85444 , H01L2225/0651 , H01L2225/06527 , H01L2225/06575 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： SI in a semiconductor device in which a plurality of semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module, is to be improved. The semiconductor device comprises a first semiconductor chip and a second semiconductor chip mounted over a package substrate which has a plurality of bonding pads arranged along the edges. The first semiconductor chip has a plurality of bonding pads for analog signals, and the second semiconductor chip has a plurality of bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
摘要翻译：要提高其中诸如多芯片模块之类的耐电压或抗噪声能力不同的多个半导体芯片的半导体器件中的SI。半导体器件包括安装在封装衬底上的第一半导体芯片和第二半导体芯片，该封装衬底具有沿着边缘布置的多个焊盘。第一半导体芯片具有用于模拟信号的多个接合焊盘，第二半导体芯片具有用于高电压信号的多个焊盘。布置用于模拟信号的接合焊盘的边缘以及布置有用于高电压信号的接合焊盘的边缘沿着封装衬底的相互不同的边缘设置。可以容易地避免用于高电压信号的电极或布线与封装基板上的模拟信号的连接，从而可以抑制SI劣化。

3. 发明授权

US07745921B2 Multi-chip semiconductor device 失效
标题翻译：多芯片半导体器件
公开(公告)号：US07745921B2
公开(公告)日：2010-06-29
申请号：US12264970
申请日：2008-11-05
申请人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
发明人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
IPC分类号： H01L23/02
CPC分类号： H01L27/14618 , H01L23/498 , H01L23/49838 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14634 , H01L2224/05553 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48644 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2224/85444 , H01L2225/0651 , H01L2225/06527 , H01L2225/06575 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
摘要翻译：半导体器件包括不同于耐电压或抗噪声的诸如多芯片模块的半导体芯片。半导体器件包括安装在封装衬底上的第一和第二半导体芯片，该封装衬底具有沿边缘布置的焊盘。第一半导体芯片包括用于模拟信号的接合焊盘，第二半导体芯片包括用于高电压信号的焊盘。布置用于模拟信号的接合焊盘的边缘以及布置有用于高电压信号的接合焊盘的边缘沿着封装衬底的相互不同的边缘设置。可以容易地避免用于高电压信号的电极或布线与封装基板上的模拟信号的连接，从而可以抑制SI劣化。

4. 发明申请

US20060220673A1 Semiconductor device and an image sensing device 失效
标题翻译：半导体器件和图像感测器件
公开(公告)号：US20060220673A1
公开(公告)日：2006-10-05
申请号：US11392730
申请日：2006-03-30
申请人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
发明人： Kazuhiko Hiranuma , Hiroshi Kuroda , Yoshiyuki Abe
IPC分类号： H03K17/16
CPC分类号： H01L27/14618 , H01L23/498 , H01L23/49838 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/14634 , H01L2224/05553 , H01L2224/05554 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48644 , H01L2224/49171 , H01L2224/49433 , H01L2224/73265 , H01L2224/85444 , H01L2225/0651 , H01L2225/06527 , H01L2225/06575 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： SI in a semiconductor device in which a plurality of semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module, is to be improved. The semiconductor device comprises a first semiconductor chip and a second semiconductor chip mounted over a package substrate which has a plurality of bonding pads arranged along the edges. The first semiconductor chip has a plurality of bonding pads for analog signals, and the second semiconductor chip has a plurality of bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
摘要翻译：要提高其中诸如多芯片模块之类的耐电压或抗噪声能力不同的多个半导体芯片的半导体器件中的SI。半导体器件包括安装在封装衬底上的第一半导体芯片和第二半导体芯片，该封装衬底具有沿着边缘布置的多个焊盘。第一半导体芯片具有用于模拟信号的多个接合焊盘，第二半导体芯片具有用于高电压信号的多个焊盘。布置用于模拟信号的接合焊盘的边缘以及布置有用于高电压信号的接合焊盘的边缘沿着封装衬底的相互不同的边缘设置。可以容易地避免用于高电压信号的电极或布线与封装基板上的模拟信号的连接，从而可以抑制SI劣化。

5. 发明授权

US09790850B2 Turbocharger system 有权
公开(公告)号：US09790850B2
公开(公告)日：2017-10-17
申请号：US13881319
申请日：2011-10-24
申请人： Isao Kitsukawa , Tomohiro Sugano , Yoshiyuki Abe , Haruyo Kimura , Akira Iijima , Naoki Ishibashi , Syougo Sakashita
发明人： Isao Kitsukawa , Tomohiro Sugano , Yoshiyuki Abe , Haruyo Kimura , Akira Iijima , Naoki Ishibashi , Syougo Sakashita
IPC分类号： F02B33/44 , F02B37/11 , F02B37/10 , F02B39/10 , F02D23/00
CPC分类号： F02B37/11 , F02B37/10 , F02B39/10 , F02D23/00 , F02D41/0007 , F02D41/062 , F02D2200/702 , Y02T10/144
摘要： A turbocharger system for simultaneously improving a fuel efficiency and obtaining a satisfactory hill start performance due to a downsized engine. The system includes an electric assist turbocharger which includes a turbine disposed in an exhaust passage of an engine and driven by exhaust gas, a compressor disposed in an intake passage and driven by a rotational torque of the turbine, and an electric motor assisting a driving force of the compressor and an electric motor control unit which drives the electric motor when detecting a start operation at a sloping road.

6. 发明授权

US09512843B2 Turbocharger system 有权
标题翻译：涡轮增压器系统
公开(公告)号：US09512843B2
公开(公告)日：2016-12-06
申请号：US13882065
申请日：2011-10-26
申请人： Isao Kitsukawa , Tomohiro Sugano , Yoshiyuki Abe , Haruyo Kimura , Akira Iijima , Naoki Ishibashi , Syougo Sakashita
发明人： Isao Kitsukawa , Tomohiro Sugano , Yoshiyuki Abe , Haruyo Kimura , Akira Iijima , Naoki Ishibashi , Syougo Sakashita
IPC分类号： F02B33/44 , F04D13/06 , F02B37/10 , F02B39/10 , F02D23/00
CPC分类号： F04D13/06 , F02B37/10 , F02B37/14 , F02B39/10 , F02D23/00 , F02D41/0007 , F02D2200/50 , F02M26/05 , F02M26/23 , Y02T10/121 , Y02T10/144
摘要： A turbocharger system for achieving both improvement of fuel efficiency by engine downsizing and excellent shock loading resistance. The system includes: a power-assisted turbocharger mounted on a vehicle having an accessory and including a turbine disposed on an exhaust passage of an engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the accessory is being driven.
摘要翻译：一种涡轮增压器系统，用于通过发动机小型化和优异的抗冲击负载能力来实现燃料效率的提高。该系统包括：安装在具有附件并且包括设置在发动机的排气通道上并由排气驱动的涡轮机的车辆上的动力辅助涡轮增压器，设置在进气通道上并由涡轮的旋转扭矩驱动的压缩机，以及辅助压缩机的驱动力的电动机; 以及当所述附件被驱动时驱动所述电动机的电动机控制单元。

7. 发明授权

US09334833B2 Turbocharger system 有权
标题翻译：涡轮增压器系统
公开(公告)号：US09334833B2
公开(公告)日：2016-05-10
申请号：US13881103
申请日：2011-10-24
申请人： Isao Kitsukawa , Tomohiro Sugano , Yoshiyuki Abe , Haruyo Kimura , Akira Iijima , Naoki Ishibashi , Syougo Sakashita
发明人： Isao Kitsukawa , Tomohiro Sugano , Yoshiyuki Abe , Haruyo Kimura , Akira Iijima , Naoki Ishibashi , Syougo Sakashita
IPC分类号： F02B33/44 , F02M25/07 , F02B37/013 , F02B37/10 , F02B39/10 , F02D21/08 , F02D23/00 , F02B37/00
CPC分类号： F02M26/03 , F02B37/004 , F02B37/013 , F02B37/10 , F02B39/10 , F02D21/08 , F02D23/00 , Y02T10/144
摘要： A turbocharger system for ensuring a sufficient exhaust gas recirculation (“EGR”) amount in all operating conditions, and reducing NOx emission from an engine. The system includes an EGR controller that re-circulates a part of exhaust gas discharged from the engine to an intake side. The turbocharger is a power-assisted turbocharger including an electric motor that assists a drive force of a compressor. The EGR controller controls an amount of exhaust gas recirculated to the intake side so as to inhibit the generation of NOx regardless of an amount of oxygen necessary for combustion of the engine. An electric motor control unit drives the electric motor, by the control of the EGR controller, when the amount of oxygen necessary for the combustion of the engine is deficient.
摘要翻译：一种涡轮增压器系统，用于确保在所有操作条件下足够的废气再循环（“EGR”）量，并且减少来自发动机的NOx排放。该系统包括EGR控制器，其将从发动机排出的废气的一部分重新循环到进气侧。涡轮增压器是一种动力辅助涡轮增压器，其包括有助于压缩机的驱动力的电动机。 EGR控制器控制再循环到进气侧的废气量，以便与发动机燃烧所需的氧气量无关地抑制NOx的产生。当发动机燃烧所需的氧气量不足时，电动机控制单元通过EGR控制器的控制来驱动电动机。

8. 发明授权

US09005487B2 Tablet for ion plating, production method therefor and transparent conductive film 有权
标题翻译：用于离子电镀的片剂，其制备方法和透明导电膜
公开(公告)号：US09005487B2
公开(公告)日：2015-04-14
申请号：US13388798
申请日：2010-07-29
申请人： Tokuyuki Nakayama , Yoshiyuki Abe
发明人： Tokuyuki Nakayama , Yoshiyuki Abe
IPC分类号： H01B1/08 , C23C14/08 , C04B35/01 , C04B35/645 , C23C14/34
CPC分类号： H01J37/3429 , C04B35/01 , C04B35/645 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/5445 , C04B2235/5472 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/6585 , C04B2235/6586 , C04B2235/668 , C04B2235/77 , C04B2235/786 , C04B2235/95 , C04B2235/963 , C23C14/08 , C23C14/3414 , H01B1/08 , H01J1/00 , H01L31/022466 , H01L33/42
摘要： A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.5 μm, then (b) molding the mixed powder, and sintering the molding by a normal pressure sintering method, or (b′) molding and sintering the mixed powder by a hot press method.
摘要翻译：用于离子镀的片剂能够实现适合于蓝色LED或太阳能电池的透明导电膜的高速成膜和不产生飞溅的无节点成膜，最适合获得溅射的氧化物烧结体，以及其制造方法。通过加工氧化物烧结体获得的用于离子镀的片剂包括铟和铈作为氧化物，并且铈含量为0.3至9原子％，作为Ce /（In + Ce）的原子数比。氧化物烧结体具有作为主晶相的二氧化硅结构的In2O3相，具有以平均粒径为3μm以下的晶粒微分散的萤石型结构的CeO 2相作为第二相。氧化物烧结体通过（a）将由氧化铟粉末组成的平均粒径为1.5μm以下的原料粉末混合，然后（b）成型混合粉末，并通过常压烧结成型体烧结方法或（b'）通过热压法成型和烧结混合粉末。

9. 发明授权

US08840115B2 Wide range temperature and pressure hydraulic cylinder sealing system 有权
标题翻译：宽范围温压液压缸密封系统
公开(公告)号：US08840115B2
公开(公告)日：2014-09-23
申请号：US11684318
申请日：2007-03-09
申请人： Joel T. Johnson , Benjamin E. Westbrook , Noriyuki Matsui , Yoshiyuki Abe , Takeshi Wakana , Mathias Burkert
发明人： Joel T. Johnson , Benjamin E. Westbrook , Noriyuki Matsui , Yoshiyuki Abe , Takeshi Wakana , Mathias Burkert
IPC分类号： F16J15/32 , F16J15/00 , F16J15/56
CPC分类号： F16J15/56 , F16J15/002
摘要： A seal system for a reciprocating cylinder includes a buffer seal, a rod seal, and a wiper seal. The buffer seal includes a dynamic seal lip and a static lip extending from a hinge portion. The hinge portion of the static lip allows fluid to escape past the outer diameter of the seal when the rod is retracted thereby releasing any pressure build-up between the rod seal and buffer seal. The axial face portion of the dynamic seal lip includes axially extending notches therein. The notches prevent the buffer seal from sticking to the axial wall of the groove and provide a consistent path for the fluid to energize the annular groove between the static and dynamic lips during the extension phase which is necessary for the function of the seal. The back-up ring is an integrated part of the buffer seal, used to provide superior extrusion resistance. The rod seal includes an annular seal body having a dynamic seal lip angularly extending radially inwardly and axially from the seal body, and a static lip angularly extending radially outwardly and axially from the seal body. An axial face portion of the dynamic seal lip and the static lip each include radially extending notches therein. The notches prevent the seal from sticking to the axial walls of the groove the rod seal is installed in and provides a consistent path for the fluid to energize the annular groove created by the static and dynamic lip during the extension phase. The back-up ring is an integrated part of the rod seal, used to provide superior extrusion resistance.
摘要翻译：用于往复式气缸的密封系统包括缓冲密封件，杆密封件和擦拭器密封件。缓冲密封件包括动态密封唇缘和从铰链部分延伸的静态唇缘。当杆缩回时，静态唇缘的铰链部分允许流体逃离密封件的外径，从而释放杆密封件和缓冲密封件之间的任何压力积聚。动态密封唇的轴向面部分包括其中轴向延伸的凹口。凹口防止缓冲密封件粘附到凹槽的轴向壁上，并提供一致的路径，用于在密封功能所需的延伸阶段期间使流体在静态和动态唇缘之间激励环形凹槽。备用环是缓冲密封件的集成部件，用于提供优异的挤出阻力。杆密封件包括环形密封体，其具有从密封体径向向内和轴向成角度地延伸的动态密封唇，以及从密封体径向向外并且轴向地成角度地延伸的静态唇缘。动态密封唇缘和静态唇缘的轴向面部各自包括径向延伸的凹口。凹口防止密封件粘附到凹槽的轴向壁上，杆密封件安装在该轴向壁中，并且提供一致的路径，以使流体在延伸阶段期间由静态和动态唇缘产生的环形凹槽通电。支撑环是杆密封件的集成部件，用于提供优异的挤压阻力。

10. 发明授权

US08729698B2 Method of manufacturing semiconductor device, semiconductor device and multilayer wafer structure 有权
公开(公告)号：US08729698B2
公开(公告)日：2014-05-20
申请号：US12872966
申请日：2010-08-31
申请人： Tadahiro Morifuji , Haruo Shimamoto , Chuichi Miyazaki , Toshihide Uematsu , Yoshiyuki Abe
发明人： Tadahiro Morifuji , Haruo Shimamoto , Chuichi Miyazaki , Toshihide Uematsu , Yoshiyuki Abe
IPC分类号： H01L23/488
CPC分类号： H01L24/97 , H01L21/561 , H01L21/6835 , H01L21/6836 , H01L21/76898 , H01L21/78 , H01L23/3128 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/94 , H01L25/50 , H01L2221/68327 , H01L2224/13025 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/81193 , H01L2224/81801 , H01L2224/9202 , H01L2224/95143 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/3011 , H01L2924/00
摘要： Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line.

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