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    • 5. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US07136138B1
    • 2006-11-14
    • US09857208
    • 1999-04-20
    • Kanetaka SekiguchiKatsumi AotaKozo MiyoshiYuichi Akiba
    • Kanetaka SekiguchiKatsumi AotaKozo MiyoshiYuichi Akiba
    • G02F1/01G04C21/00
    • G04G9/0047G02F1/13318G02F1/133514G02F1/133536G02F2001/13324G04C10/02G04C10/04
    • A timepiece provided with a liquid crystal display panel (9) for displaying thereon at least one of time information (5) and calendar information (4), wherein a solar battery unit (12) is provided to face at least a part of a visual recognition side surface of the liquid crystal display panel (9) or an opposite-side (lower-side) surface thereof, the light being applied to a power generation portion of the solar battery unit (12) through a transmission portion of the liquid crystal display panel (9) to generate electric power or what is displayed on the liquid crystal display panel (9) being visually recognized through a transmission portion of the solar battery unit (12), a timepiece circuit and the liquid crystal display panel (9) being driven by utilizing the electric power generated by the solar battery unit (12).
    • 一种设置有用于在其上显示时间信息(5)和日历信息(4)中的至少一个的液晶显示面板(9)的钟表,其中设置太阳能电池单元(12)以面对视觉上的至少一部分 液晶显示面板(9)的识别侧表面或其相对侧(下侧)表面,该光通过液晶的透射部分被施加到太阳能电池单元(12)的发电部分 显示面板(9)通过太阳能电池单元(12)的透射部分,钟表电路和液晶显示面板(9)在视觉上识别的液晶显示面板(9)上产生电力或显示的内容, 通过利用由太阳能电池单元(12)产生的电力来驱动。
    • 6. 发明授权
    • Matrix display device
    • 矩阵显示设备
    • US4642620A
    • 1987-02-10
    • US536105
    • 1983-09-26
    • Seigo TogashiKanetaka Sekiguchi
    • Seigo TogashiKanetaka Sekiguchi
    • G02F1/1335G02F1/1343G02F1/1362G02F1/1365G09G3/36G09G3/02
    • G02F1/1365G09G3/367G02F1/133512G02F1/13624G02F2001/134345
    • In a matrix display device, non-linear resistance elements are coupled to each display element for controlling selective activation of display elements in response to drive signals, with each non-linear resistance element comprising sets of rectifying elements formed by thin film deposition which are connected in parallel with one another with opposing polarities. Each set comprise one or more rectifying elements formed of for example PN junctions, PIN junctions, Schottky junctions, etc., using material such as amorphous silicon as a semiconductor material, and the rectifying elements can be disposed in a multilayer configuration in order to reduce the display area occupied, or can be provided with transparent electrodes to positively utilized incident light to enhance current flow.
    • 在矩阵显示装置中,非线性电阻元件耦合到每个显示元件,用于响应于驱动信号控制显示元件的选择性激活,每个非线性电阻元件包括通过薄膜沉积形成的整流元件组,其连接 彼此平行,具有相反的极性。 每组包括使用诸如非晶硅作为半导体材料的材料例如PN结,PIN结,肖特基结等形成的一个或多个整流元件,并且整流元件可以设置在多层构造中以便减少 或者可以设置有透明电极以积极利用入射光来增强电流。
    • 7. 发明授权
    • Method of manufacturing insulated gate thin film field effect transistors
    • 制造绝缘栅极薄膜场效应晶体管的方法
    • US4502204A
    • 1985-03-05
    • US621324
    • 1984-06-15
    • Seigo TogashiKanetaka Sekiguchi
    • Seigo TogashiKanetaka Sekiguchi
    • H01L21/336H01L29/49H01L21/203
    • H01L29/66757H01L29/4908
    • A method of manufacturing insulated gate thin film field effect transistors is disclosed in which first and second closely adjacent anodic oxidation electrodes are formed on an electrically insulating substrate, and a semiconducting layer is formed on the insulating substrate and the first and second anodic oxidation electrodes. An anodic oxidation of the semiconducting layer is performed, utilizing the first and second anodic oxidation electrodes, to form an oxide layer on the semiconducting layer. The oxide layer is then patterned to form a gate insulator and the semiconducting layer is patterned to expose a portion of each of the first and second anodic oxidation electrodes. The exposed portions of the first and second anodic oxidation electrodes are patterned to form source and drain electrodes, respectively.
    • 公开了一种制造绝缘栅极薄膜场效应晶体管的方法,其中在电绝缘基板上形成第一和第二相邻的阳极氧化电极,并且在绝缘基板和第一和第二阳极氧化电极上形成半导体层。 利用第一和第二阳极氧化电极进行半导体层的阳极氧化,以在半导电层上形成氧化物层。 然后对氧化物层进行构图以形成栅极绝缘体,并且对半导电层进行构图以暴露第一和第二阳极氧化电极中的每一个的一部分。 对第一和​​第二阳极氧化电极的暴露部分进行图案化以分别形成源极和漏极。