专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080064211A1 POLISHING COMPOUND FOR COPPER WIRINGS AND METHOD FOR POLISHING SURFACE OF SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：用于铜线的抛光化合物和用于抛光半导体集成电路表面的方法
公开(公告)号：US20080064211A1
公开(公告)日：2008-03-13
申请号：US11935043
申请日：2007-11-05
申请人： Katsuyuki TSUGITA , Hiroyuki KAMIYA
发明人： Katsuyuki TSUGITA , Hiroyuki KAMIYA
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： To provide a technique for realizing high-precision surface planarization when copper is used as a wiring metal. A polishing compound is used which comprises water; a peroxide oxidizer; a surface protective agent for copper; at least one first chelating agent selected from the group consisting of tartaric acid, malonic acid, malic acid, citric acid, maleic acid, oxalic acid and fumaric acid; and at least one second chelating agent selected from the group consisting of triethylenetetramine, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, tetraethylenepentamine, glycol-ether-diaminetetraacetic acid, trans-1,2-cyclohexanediaminetetraacetic acid, o-phenanthroline, and derivatives thereof.
摘要翻译：提供一种当使用铜作为布线金属时实现高精度表面平坦化的技术。使用包含水的抛光化合物; 过氧化物氧化剂; 铜表面保护剂; 至少一种选自酒石酸，丙二酸，苹果酸，柠檬酸，马来酸，草酸和富马酸的第一螯合剂; 和至少一种选自三亚乙基四胺，乙二胺二乙酸，乙二胺四乙酸，四亚乙基五胺，二醇醚 - 二胺四乙酸，反式-1,2-环己烷二胺四乙酸，邻菲咯啉及其衍生物的第二螯合剂。

2. 发明申请

US20090140199A1 POLISHING COMPOUND AND POLISHING METHOD 审中-公开
标题翻译：抛光复合和抛光方法
公开(公告)号：US20090140199A1
公开(公告)日：2009-06-04
申请号：US12277468
申请日：2008-11-25
申请人： Hiroyuki KAMIYA , Katsuyuki TSUGITA
发明人： Hiroyuki KAMIYA , Katsuyuki TSUGITA
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/3212 , H05K3/045 , H05K3/107 , H05K2201/0209 , H05K2203/025 , H05K2203/0796
摘要： To provide a polishing compound which can satisfy both high removal rate of an object to be polished and excellent property to eliminate the difference in level, and to provide a polishing method which can polish a wiring metal fast while suppressing increase of a wiring metal resistance and is excellent in the property to eliminate the difference in level.A polishing compound which comprises abrasive particles, an oxidizing agent, ammonium ions, polyvalent carboxylate ions, at least one chelating agent selected from the group consisting of pentaethylenehexamine, triethylenetetramine and tetraethylenepentamine, and an aqueous medium. Further, a polishing method of polishing a wiring metal 3 by using the polishing compound, after providing a wiring trench 2 on a resin substrate 1 and embedding the wiring metal 3 in the wiring trench 2.
摘要翻译：为了提供能够满足被研磨对象物的高去除率和优异性能以消除水平差的抛光化合物，并且提供能够在抑制布线金属电阻增加的同时快速抛光布线金属的抛光方法，以及在物业上是优秀的，以消除差距的水平。一种抛光剂，其包含磨粒，氧化剂，铵离子，多价羧酸根离子，选自五亚乙基六胺，三亚乙基四胺和四亚乙基五胺中的至少一种螯合剂和水性介质。另外，在将树脂基板1上配置布线沟槽2并且将布线金属3嵌入布线槽2中之后，通过使用研磨用化合物研磨布线金属3的研磨方法。

3. 发明申请

US20080272088A1 POLISHING COMPOUND AND POLISHING METHOD 审中-公开
标题翻译：抛光复合和抛光方法
公开(公告)号：US20080272088A1
公开(公告)日：2008-11-06
申请号：US12025156
申请日：2008-02-04
申请人： Hiroyuki KAMIYA , Katsuyuki Tsugita
发明人： Hiroyuki KAMIYA , Katsuyuki Tsugita
IPC分类号： B44C1/22 , C09K13/00
CPC分类号： H05K3/045 , C09G1/02 , C09K3/1463 , H01L21/3212 , H05K3/107 , H05K3/26 , H05K2201/0209 , H05K2203/025 , H05K2203/0786
摘要： To provide a polishing compound that is capable of minimizing formation of scratches on an object to be polished, such as a resin substrate or a metal wiring, and polishing at a high removal rate. To further provide a polishing method that is capable of minimizing formation of scratches on a resin substrate or a metal wiring, and improving the throughput.The polishing compound T comprises an oxidizing agent, an electrolyte and an aqueous medium, wherein ions formed from the electrolyte comprise ammonium ions, at least one type of organic carboxylate ions selected from the group consisting of polycarboxylate ions and hydroxycarboxylate ions, and at least one type of ions selected from the group consisting of carbonate ions, hydrogencarbonate ions, sulfate ions and acetate ions.A wiring trench 2 is formed in a resin substrate 1, then a wiring metal 3 is embedded in the wiring trench 2, and the wiring metal 3 is polished by using the above-mentioned polishing compound, whereby it is possible to minimize formation of scratches on the metal wiring 3 and to improve the throughput.
摘要翻译：提供能够最小化待研磨物体（例如树脂基板或金属布线）上的划痕的形成的抛光剂，以高的去除率进行研磨。为了进一步提供能够最小化在树脂基板或金属布线上形成划痕并且提高生产量的抛光方法。抛光化合物T包括氧化剂，电解质和水性介质，其中由电解质形成的离子包含铵离子，至少一种选自聚羧酸根离子和羟基羧酸根离子的有机羧酸根离子，以及至少一种选自碳酸根离子，碳酸氢根离子，硫酸根离子和乙酸根离子的离子类型。在树脂基板1上形成布线沟槽2，然后将布线金属3埋设在布线沟槽2中，并且通过使用上述抛光剂对布线金属3进行研磨，从而可以最小化划痕的形成并且提高生产量。

4. 发明申请

US20100009540A1 POLISHING COMPOUND, ITS PRODUCTION PROCESS AND POLISHING METHOD 审中-公开
标题翻译：抛光化合物，其生产工艺和抛光方法
公开(公告)号：US20100009540A1
公开(公告)日：2010-01-14
申请号：US12564169
申请日：2009-09-22
申请人： Hiroyuki KAMIYA , Katsuyuki Tsugita
发明人： Hiroyuki KAMIYA , Katsuyuki Tsugita
IPC分类号： H01L21/304
CPC分类号： C09K3/1463
摘要： A polishing compound for chemical mechanical polishing of a substrate, which comprises (A) abrasive grains, (B) an aqueous medium, (C) tartaric acid, (D) trishydroxymethylaminomethane and (E) at least one member selected from the group consisting of malonic acid and maleic acid, and more preferably, which further contains a compound having a function to form a protective film on the wiring metal surface to prevent dishing at the wiring metal portion, such as benzotriazole. By use of this polishing compound, the copper wirings on the surface of a semiconductor integrated circuit board can be polished at a high removal rate while suppressing formation of scars as defects in a polishing step. Particularly in a first polishing step of polishing copper wirings having a film made of tantalum or a tantalum compound as a barrier film, excellent selectivity will be obtained, dishing and erosion due to polishing are less likely to occur, and an extremely high precision flat surface of a semiconductor integrated circuit board can be obtained.
摘要翻译：一种用于基材的化学机械抛光的抛光剂，其包含（A）磨粒，（B）水性介质，（C）酒石酸，（D）三羟甲基氨基甲烷和（E）至少一种选自丙二酸和马来酸，更优选还含有具有在布线金属表面上形成保护膜的功能的化合物，以防止布线金属部分如苯并三唑的凹陷。通过使用该研磨用化合物，半导体集成电路基板的表面的铜布线能够以高的去除率进行抛光，同时抑制疤痕的形成，作为研磨工序的缺陷。特别是在具有由钽或钽化合物制成的膜作为阻挡膜的铜布线的研磨的第一研磨步骤中，可以获得极好的选择性，因此不太可能发生由于抛光引起的凹陷和侵蚀，并且极高的精密平面可以获得半导体集成电路板。

5. 发明申请

US20080261400A1 POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR FORMING COPPER WIRING FOR SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：抛光组合物，抛光方法和形成半导体集成电路铜线的方法
公开(公告)号：US20080261400A1
公开(公告)日：2008-10-23
申请号：US12143960
申请日：2008-06-23
申请人： Iori YOSHIDA , Hiroyuki KAMIYA , Satoshi TAKEMIYA , Atsushi HAYASHI , Norihito NAKAZAWA
发明人： Iori YOSHIDA , Hiroyuki KAMIYA , Satoshi TAKEMIYA , Atsushi HAYASHI , Norihito NAKAZAWA
IPC分类号： C09K13/00 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present invention provides a technique for realizing highly flat surface of a semiconductor integrated circuit employing copper as a wiring metal.The present invention provides a polishing composition containing a neutralized carboxylic acid, an oxidizer and water, wherein a part of the carboxylic acid is an alicyclic resin acid (A) and the pH value is within a range of from 7.5 to 12. The alicyclic resin acid is preferably at least one type selected from the group consisting of abietic acid, an isomer of abietic acid, pimaric acid, an isomer of pimaric acid and derivatives of these, or a rosin. Further, the present invention provides a polishing method of semiconductor integrated circuit surface in which a copper film formed on a surface having a groove for wiring, by using the polishing composition, and the present invention provides a copper wiring for semiconductor integrated circuit formed by this polishing method.
摘要翻译：本发明提供一种实现使用铜作为布线金属的半导体集成电路的高度平坦表面的技术。本发明提供一种含有中和的羧酸，氧化剂和水的抛光组合物，其中一部分羧酸是脂环族树脂酸（A），pH值在7.5〜12的范围内。脂环族树脂酸优选为选自松香酸，松香酸异构体，海松酸，海松酸异构体及其衍生物或松香中的至少一种。此外，本发明提供一种半导体集成电路表面的研磨方法，其中通过使用抛光组合物形成在具有布线用槽的表面上的铜膜，本发明提供了由该形成的半导体集成电路的铜布线抛光方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式