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1. 发明申请

US20130320813A1 DIELECTRIC DEVICE 审中-公开
标题翻译：电介质设备
公开(公告)号：US20130320813A1
公开(公告)日：2013-12-05
申请号：US13487530
申请日：2012-06-04
申请人： Katsuyuki KURACHI , Hitoshi SAKUMA , Yasuhiro AIDA , Kazuhiko MAEJIMA , Mayumi NAKAJIMA
发明人： Katsuyuki KURACHI , Hitoshi SAKUMA , Yasuhiro AIDA , Kazuhiko MAEJIMA , Mayumi NAKAJIMA
IPC分类号： H01L41/047 , H01L41/04
CPC分类号： H01L41/0815 , H01L41/0477
摘要： A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.
摘要翻译：电介质器件具有非定向或非晶结构的第一电极膜，设置在第一电极膜上并且具有优先取向结构的电介质膜和设置在电介质膜上并具有非取向或非定向结构的第二电极膜，无定形结构。

2. 发明申请

US20140035440A1 PIEZOELECTRIC DEVICE 有权
标题翻译：压电器件
公开(公告)号：US20140035440A1
公开(公告)日：2014-02-06
申请号：US13563169
申请日：2012-07-31
申请人： Yasuhiro AIDA , Katsuyuki KURACHI , Hitoshi SAKUMA , Kazuhiko MAEJIMA
发明人： Yasuhiro AIDA , Katsuyuki KURACHI , Hitoshi SAKUMA , Kazuhiko MAEJIMA
IPC分类号： H01L41/00
CPC分类号： H03H9/02133 , G01C19/5783 , G01P15/00 , H01L41/0536 , H01L41/0805 , H01L41/0815 , H01L41/0973 , H01L41/1132 , H04R17/02
摘要： A piezoelectric device according to the present invention is provided with a pair of electrode films, a piezoelectric film sandwiched in between the pair of electrode films, and a stress control film which is in direct contact with a surface of at least one of the pair of electrode films, on the side where the electrode film is not in contact with the piezoelectric film, and which has a linear expansion coefficient larger than those of the relevant electrode film and the piezoelectric film.
摘要翻译：根据本发明的压电装置设置有一对电极膜，夹在所述一对电极膜之间的压电膜和与所述一对电极膜中的至少一个的表面直接接触的应力控制膜电极膜在电极膜不与压电膜接触的一侧，并且线膨胀系数大于相关电极膜和压电膜的线膨胀系数。

3. 发明申请

US20140035439A1 PIEZOELECTRIC DEVICE 有权
标题翻译：压电器件
公开(公告)号：US20140035439A1
公开(公告)日：2014-02-06
申请号：US13566468
申请日：2012-08-03
申请人： Katsuyuki KURACHI , Yasuhiro AIDA , Hitoshi SAKUMA , Kazuhiko MAEJIMA
发明人： Katsuyuki KURACHI , Yasuhiro AIDA , Hitoshi SAKUMA , Kazuhiko MAEJIMA
IPC分类号： H01L41/047
CPC分类号： H01L41/0478 , B41J2/14233 , H01L41/0477 , H01L41/0815 , H01L41/1873 , H01L41/313 , H01L41/316
摘要： A piezoelectric device according to the present invention is provided with a first electrode film, a first nonmetal electroconductive intermediate film provided on the first electrode film, a piezoelectric film provided on the first nonmetal electroconductive intermediate film, a second nonmetal electroconductive intermediate film provided on the piezoelectric film, and a second electrode film provided on the second nonmetal electroconductive intermediate film. A linear expansion coefficient of the first nonmetal electroconductive intermediate film is larger than those of the first electrode film and the piezoelectric film, and a linear expansion coefficient of the second nonmetal electroconductive intermediate film is larger than those of the second electrode film and the piezoelectric film.
摘要翻译：根据本发明的压电装置设置有第一电极膜，设置在第一电极膜上的第一非金属导电中间膜，设置在第一非金属导电中间膜上的压电膜，设置在第一非金属导电中间膜上的第二非金属导电中间膜压电膜，以及设置在第二非金属导电中间膜上的第二电极膜。第一非金属导电性中间膜的线膨胀系数比第一电极膜和压电膜的线膨胀系数大，第二非金属导电性中间膜的线膨胀系数比第二电极膜和压电膜的线膨胀系数大。

4. 发明申请

US20100229951A1 SOLAR CELL, AND METHOD FOR PRODUCING THE SOLAR CELL 有权
标题翻译：太阳能电池和太阳能电池的制造方法
公开(公告)号：US20100229951A1
公开(公告)日：2010-09-16
申请号：US12718528
申请日：2010-03-05
申请人： Yasuhiro AIDA , Masato SUSUKIDA
发明人： Yasuhiro AIDA , Masato SUSUKIDA
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/0749 , Y02E10/541
摘要： A solar cell is provided as one capable of increasing the open voltage when compared with the conventional solar cells. A solar cell according to the present invention has a p-type semiconductor layer containing a group Ib element, a group IIIb element, and a group VIb element, and an n-type semiconductor layer containing a group Ib element, a group IIIb element, a group VIb element, and Zn and formed on the p-type semiconductor layer. A content of the group Ib element in the n-type semiconductor layer is from 15 to 21 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer, and a content of Zn in the n-type semiconductor layer is from 0.005 to 1.0 at. % to the total number of atoms of the group Ib element, the group IIIb element, the group VIb element, and Zn in the n-type semiconductor layer.
摘要翻译：提供太阳能电池作为与常规太阳能电池相比能够增加开路电压的太阳能电池。根据本发明的太阳能电池具有含有Ib族元素，IIIb族元素和VIb族元素的p型半导体层，以及含有Ib族元素，IIIb族元素， VIb族元素，Zn形成在p型半导体层上。 n型半导体层中的Ib族元素的含量为15〜21at。％至n型半导体层中的Ib族元素，IIIb族元素，VIb族元素和Zn族的原子总数，n型半导体层中的Zn含量为0.005〜1.0 在。％至n型半导体层中的Ib族元素，IIIb族元素，VIb族元素和Zn的总原子数。

5. 发明申请

US20100210065A1 METHOD OF MANUFACTURING SOLAR CELL 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20100210065A1
公开(公告)日：2010-08-19
申请号：US12702871
申请日：2010-02-09
申请人： Yasuhiro AIDA , Masato SUSUKIDA
发明人： Yasuhiro AIDA , Masato SUSUKIDA
IPC分类号： H01L21/363
CPC分类号： H01L21/02568 , H01L21/02554 , H01L21/02557 , H01L21/02565 , H01L21/02631 , H01L31/02168 , H01L31/0322 , H01L31/0749 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： A method of manufacturing a solar cell is provided, which can enhance the carrier concentration, so as to increase the open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby raising the conversion efficiency. The method of manufacturing a solar cell in accordance with the present invention comprises a sputtering step of forming a layer containing Ib and IIIb group elements and Se on a substrate by sputtering with a target containing a Ib group element and a target containing a IIIb group element in an atmosphere containing Se; and a heat treatment step of heating the layer.
摘要翻译：提供一种制造太阳能电池的方法，其可以增强载流子浓度，从而提高开路电压，短路电流和填充因子（F.F.），从而提高转换效率。根据本发明的太阳能电池的制造方法包括：溅射步骤，通过用含有Ib族元素的靶和含有IIIb族元素的靶在溅射中形成含有Ib和IIIb族元素的层和Se 在含有Se的气氛中以及加热该层的热处理步骤。

6. 发明申请

US20100206381A1 SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL 有权
标题翻译：太阳能电池和制造太阳能电池的方法
公开(公告)号：US20100206381A1
公开(公告)日：2010-08-19
申请号：US12704413
申请日：2010-02-11
申请人： Yasuhiro AIDA , Masato SUSUKIDA
发明人： Yasuhiro AIDA , Masato SUSUKIDA
IPC分类号： H01L31/04 , H01L31/00 , H01L31/18
CPC分类号： H01L31/18 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A solar cell which can increase its open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby enhancing its conversion efficiency is provided. The solar cell of the present invention comprises a p-type semiconductor layer and an n-type semiconductor layer, formed on the p-type semiconductor layer, containing a compound expressed by the following chemical formula (1): ZnO1-x-ySxSey (1) where x≧0, y>0, and 0.2
摘要翻译：提供了可以增加其开路电压，短路电流和填充因子（F.F.）的太阳能电池，从而提高其转换效率。本发明的太阳能电池包括p型半导体层和n型半导体层，其形成在p型半导体层上，其含有由以下化学式（1）表示的化合物：ZnO1-x-ySxSey（ 1）其中x≥0，y> 0和0.2

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