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1. 发明申请

US20130320813A1 DIELECTRIC DEVICE 审中-公开
标题翻译：电介质设备
公开(公告)号：US20130320813A1
公开(公告)日：2013-12-05
申请号：US13487530
申请日：2012-06-04
申请人： Katsuyuki KURACHI , Hitoshi SAKUMA , Yasuhiro AIDA , Kazuhiko MAEJIMA , Mayumi NAKAJIMA
发明人： Katsuyuki KURACHI , Hitoshi SAKUMA , Yasuhiro AIDA , Kazuhiko MAEJIMA , Mayumi NAKAJIMA
IPC分类号： H01L41/047 , H01L41/04
CPC分类号： H01L41/0815 , H01L41/0477
摘要： A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.
摘要翻译：电介质器件具有非定向或非晶结构的第一电极膜，设置在第一电极膜上并且具有优先取向结构的电介质膜和设置在电介质膜上并具有非取向或非定向结构的第二电极膜，无定形结构。

2. 发明授权

US08482096B2 Semiconductor photodetector and manufacturing method therefor 有权
标题翻译：半导体光电探测器及其制造方法
公开(公告)号：US08482096B2
公开(公告)日：2013-07-09
申请号：US12038247
申请日：2008-02-27
申请人： Matobu Kikuchi , Yasuo Nakajima , Yoshiyuki Nakashima , Hitoshi Sakuma
发明人： Matobu Kikuchi , Yasuo Nakajima , Yoshiyuki Nakashima , Hitoshi Sakuma
IPC分类号： H01L21/70
CPC分类号： H01L31/101 , H01L31/02162 , H01L31/022416
摘要： A method for manufacturing a semiconductor photodetector includes: forming an insulating film on a semiconductor substrate; forming an electrode on and in contact with a predetermined area of a surface of the semiconductor substrate; forming a resist on the insulating film after forming the electrode; forming a power supply layer of a metal on the resist and the electrode; plating a surface of a portion of the power supply layer with a metal coating, after forming the power supply layer, the portion overlying and being in contact with the electrode; after the plating, etching and removing a part of the power supply layer leaving a portion that is covered with the metal coating and is an extension of the electrode; and removing the resist after etching the power supply layer.
摘要翻译：半导体光电检测器的制造方法包括：在半导体基板上形成绝缘膜; 在半导体衬底的表面的预定区域上形成电极并与之接触; 在形成电极之后在绝缘膜上形成抗蚀剂; 在抗蚀剂和电极上形成金属的电源层; 在形成电源层之后，用金属涂层对电源层的一部分的表面进行电镀，覆盖并与电极接触的部分; 在电镀之后，蚀刻和去除一部分电源层，留下被金属涂层覆盖的部分并且是电极的延伸部分; 并且在蚀刻电源层之后去除抗蚀剂。

3. 发明授权

US08163576B2 Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof 有权
标题翻译：具有含硅层的氮化物半导体器件及其制造方法
公开(公告)号：US08163576B2
公开(公告)日：2012-04-24
申请号：US12641421
申请日：2009-12-18
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Kazushige Kawasaki , Hitoshi Sakuma , Yuji Abe
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32
摘要： A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要翻译：提供一种半导体器件及其制造方法，其能够降低并增强氮化物衬底的背表面和形成在其上的电极之间的接触电阻的稳定性。氮化物半导体器件包括形成半导体元件的n型Ga-N衬底（1）和形成在GaN衬底（1）的背面上的作为金属电极的n电极（10）。在GaN衬底（1）和n电极（10）之间形成连接层（20），并且连接层（2）由不同于氮化物半导体并且包含硅的材料构成。

4. 发明授权

US07964424B2 Method for manufacturing nitride semiconductor light-emitting element 失效
标题翻译：氮化物半导体发光元件的制造方法
公开(公告)号：US07964424B2
公开(公告)日：2011-06-21
申请号：US12264976
申请日：2008-11-05
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/32 , H01L33/40 , H01S5/0021 , H01S5/0425 , H01S5/2009 , H01S5/3213 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.
摘要翻译：一种氮化物半导体发光元件的制造方法，其特征在于，在基板上层叠有n型氮化物半导体外延层，有源层和p型氮化物半导体外延层的半导体层叠结构体，在p型氮化物半导体外延层上形成具有含有Pd的第一电极层和含有Ta的第二电极层的p型电极; 在形成p型电极之后，在含有氧的环境中，在400℃和600℃之间的温度下进行热处理; 在热处理后，在p型电极上形成含有Au的焊盘电极。

5. 发明申请

US20110013655A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20110013655A1
公开(公告)日：2011-01-20
申请号：US12823179
申请日：2010-06-25
申请人： Tadashi Takase , Hitoshi Tada , Hiroaki Maehara , Yoshihiro Hisa , Hitoshi Sakuma
发明人： Tadashi Takase , Hitoshi Tada , Hiroaki Maehara , Yoshihiro Hisa , Hitoshi Sakuma
IPC分类号： H01S5/22
CPC分类号： H01S5/02272 , G11B7/1275 , G11B2007/0006 , H01S5/0224 , H01S5/22 , H01S5/4031 , H01S5/4087 , H01S2301/14
摘要： In a semiconductor laser device a dual wavelength semiconductor laser chip is joined onto a submount, junction down, to reduce built-in stress produced between the laser chip and the submount and to decrease polarization angles of the two respective lasers. SnAg solder is used to join the dual wavelength semiconductor laser chip onto the submount. When joining, with respect to each of the two lasers, a ratio of a distance between the center line of a waveguide and an end, placed at a lateral side of the laser chip, of a portion joining the laser chip and the submount, to a distance between the center line of the waveguide and another end, placed toward the center of the laser chip, of the portion joining the laser chip and the submount, falls within a range of 0.69 to 1.46.
摘要翻译：在半导体激光器件中，双波长半导体激光器芯片被连接到基座上，结合下来，以减少在激光芯片和底座之间产生的内在应力，并降低两个激光器的偏振角。 SnAg焊料用于将双波长半导体激光芯片连接到基座上。当连接时，相对于两个激光器中的每一个，将波导的中心线与放置在激光芯片的侧面的端部之间的距离与将激光芯片和底座接合的部分的比率与波导的中心线与接合激光芯片和底座的部分朝激光芯片的中心放置的另一端之间的距离在0.69〜1.46的范围内。

6. 发明授权

US07795738B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07795738B2
公开(公告)日：2010-09-14
申请号：US12327874
申请日：2008-12-04
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Hiroshi Kurokawa , Yasunori Tokuda , Kyosuke Kuramoto , Hitoshi Sakuma
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Hiroshi Kurokawa , Yasunori Tokuda , Kyosuke Kuramoto , Hitoshi Sakuma
IPC分类号： H01L29/45 , H01L21/20
CPC分类号： H01L33/40 , H01L33/32 , H01L2924/0002 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/32341 , H01L2924/00
摘要： A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.
摘要翻译：提供一种具有在其自身与其他电极之间不具有电阻的p电极的氮化物半导体器件及其制造方法。 p电极由第一Pd膜，Ta膜和第二Pd膜形成，并且在氮化物半导体的p型接触层上形成。在第二Pd膜上形成焊盘电极。第二Pd膜形成在形成p电极的一部分的Ta膜的整个上表面上，并且用作防止Ta膜氧化的抗氧化膜。为了防止Ta膜的氧化，第二Pd膜可以降低p电极和焊盘电极之间可能存在的电阻，从而防止p电极和焊盘电极之间的接触不良，并提供具有低电阻的p电极。

7. 发明授权

US07582908B2 Nitride semiconductor device and manufacturing method thereof 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07582908B2
公开(公告)日：2009-09-01
申请号：US11691049
申请日：2007-03-26
申请人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Yoshiyuki Suehiro
发明人： Kyozo Kanamoto , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Yoshiyuki Suehiro
IPC分类号： H01L29/26
CPC分类号： H01S5/0425 , H01S5/0206 , H01S5/0421 , H01S5/22 , H01S5/32341
摘要： A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.
摘要翻译：提供了能够实现低电阻欧姆特性和高粘合性的氮化物半导体器件及其制造方法。氮化物半导体器件具有形成半导体元件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n电极。用作载体供给层的表面变性层设置在GaN衬底和n电极之间。表面变性层通过使其与含有硅的材料反应而使GaN衬底的背面变性而形成。

8. 发明申请

US20080023799A1 NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20080023799A1
公开(公告)日：2008-01-31
申请号：US11772644
申请日：2007-07-02
申请人： Kyozo KANAMOTO , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
发明人： Kyozo KANAMOTO , Katsuomi Shiozawa , Kazushige Kawasaki , Hitoshi Sakuma , Junichi Horie , Toshihiko Shiga , Toshiyuki Oishi
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： H01S5/22 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341 , H01S2301/173 , H01S2304/00
摘要： A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.
摘要翻译：氮化物半导体器件包括其上形成有半导体器件的n型GaN衬底和形成在GaN衬底的背面上的作为金属电极的n型电极。在GaN衬底和n型电极之间插入表面改性层和反应层。表面改性层用作载体供给层，并且通过使GaN衬底的后表面与待改性的含Si等离子体反应而形成。反应层是通过清洗部分除去沉积在表面改性层上的沉积材料产生沉积层，然后使包含在第一金属层中的Ti和沉积层通过热处理部分地反应而产生的。

9. 发明申请

US20080003408A1 Thin film device 有权
标题翻译：薄膜装置
公开(公告)号：US20080003408A1
公开(公告)日：2008-01-03
申请号：US11819263
申请日：2007-06-26
申请人： Taku Masai , Hitoshi Sakuma , Kyung-Ku Choi , Toshiyasu Fujiwara
发明人： Taku Masai , Hitoshi Sakuma , Kyung-Ku Choi , Toshiyasu Fujiwara
IPC分类号： B32B3/02
CPC分类号： H01L23/5227 , H01F17/0033 , H01F41/042 , H01F2017/0073 , H01L2924/0002 , Y10T428/24521 , Y10T428/24612 , H01L2924/00
摘要： The present invention provides a thin film device in which resin film does not easily separate. In a thin film device, a conductor pattern is formed on one of the main surfaces of a plate-shaped base, and the conductor pattern is covered with a resin film. This conductor pattern has a bottom face disposed on the main surface of the base, a top face that faces the bottom face and is distant from the main surface of the base, and two side faces that connect the bottom face and the top face. A depressed portion is formed in these side faces, and an insulation film extends into the depressed portion.
摘要翻译：本发明提供一种薄膜器件，其中树脂膜不容易分离。在薄膜器件中，在板状基体的一个主表面上形成导体图案，并且用树脂膜覆盖导体图案。该导体图案具有设置在基座的主表面上的底面，面向底面并远离基座的主表面的顶面以及连接底面和顶面的两个侧面。在这些侧面形成有凹部，绝缘膜延伸到凹部。

10. 发明授权

US5610957A Reactor core coolant flow rate control system for a BWR type nuclear power plant 失效
标题翻译：用于BWR型核电站的反应堆核心冷却剂流量控制系统
公开(公告)号：US5610957A
公开(公告)日：1997-03-11
申请号：US506963
申请日：1995-07-28
申请人： Naoshi Tanikawa , Tetsuya Miyakawa , Hitoshi Sakuma , Toichi Shida , Kimiko Isono
发明人： Naoshi Tanikawa , Tetsuya Miyakawa , Hitoshi Sakuma , Toichi Shida , Kimiko Isono
IPC分类号： G21C7/32
CPC分类号： G21C7/32 , G21Y2002/207 , G21Y2002/301 , G21Y2002/303 , G21Y2004/30 , G21Y2004/402 , Y02E30/31 , Y02E30/39
摘要： A reactor core coolant flow rate control system for a BWR type nuclear power plant in which electric power is generated by a turbine-driven generator driven by a steam turbine rotating under the work of a main steam generated from a cooling water recirculated through a boiling water reactor includes an internal pump driving unit comprised of an electric motor driven by an electric power generated by the turbine-driven generator, a fluid coupling for transmitting an output torque of the electric motor and a variable-frequency generator whose rotation number is changed in accordance with the torque transmitted by way of the fluid coupling, a fluid coupling control signal generating unit for generating a fluid coupling control signal for the fluid coupling in response to at least one of deviation in a load and a rotation speed of the turbine-driven generator and deviation in a rotation speed of the internal pumps, and a plurality of internal pumps for recirculating the cooling water. Each of the internal pumps is connected to the variable-frequency generator of the internal pump driving unit and driven by an output power of the variable-frequency generator. Rotation number of the internal pump changes in dependence on the rotation number of the variable-frequency generator. The fluid coupling changes a transmission efficiency for the torque transmitted to the variable-frequency generator from the driving motor in response to the fluid coupling control signal.
摘要翻译：一种用于BWR型核电站的反应堆堆芯冷却剂流量控制系统，其中由在蒸汽涡轮机驱动的涡轮机驱动的发电机产生电力，所述发电机由在从沸水再循环的冷却水产生的主蒸汽的作用下旋转反应器包括内部泵驱动单元，其包括由涡轮驱动发电机产生的电力驱动的电动机，用于传递电动机的输出转矩的流体联接器和其转数根据变化的可变频率发生器具有通过流体联接传递的扭矩的流体耦合控制信号产生单元，用于响应于负载的偏差和涡轮驱动发电机的转速中的至少一个而产生用于流体耦合的流体耦合控制信号以及内部泵的转速的偏差，以及用于再循环冷却水的多个内部泵。每个内部泵连接到内部泵驱动单元的可变频率发生器，并由可变频率发生器的输出功率驱动。内部泵的转速根据可变频率发生器的转速而变化。流体联接响应于流体耦合控制信号改变从驱动马达传递到可变频率发生器的扭矩的传动效率。

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